• Journal of Magnetics
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• v.16 no.2
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• pp.104-107
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• 2011

In the present study, we systematically investigated the effect of mechanical milling on the magnetic properties of $Sm_2Fe_{17}N_x$ powders produced by the reduction-diffusion process. The Sm-Fe powders obtained by the reduction-diffusion process were composed of an $Sm_2Fe_{17}N_x$ single phase. After nitrogenation, the coercivity and saturation magnetization of the powders were 0.48 kOe and 13.32 kG, respectively. The particle size largely decreased down to less than $2\;{\mu}m$ in diameter after ball milling for 30 hours. However, there is no evidence that the $Sm_2Fe_{17}N_x$ was decomposed to Sm-N and ${\alpha}$-Fe even after ball milling for 30 hours. The coercivity was significantly improved up to 8.82 kOe after milling for 60 hours. However, the magnetization decreased linearly with the ball milling time.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.12-12
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• 2000

This paper investigated the effect of the film deposition rate for $CrN_x$ microstructure and mechanical properties. For these purpose, pure Cr an stoichiometric CrN films were deposited with various target power density on Si hardened M2 tool steel. The variation of ni trogen concentration in $CrN_x$ f analyzed by AES and deposition rate was calculated by measuring of thickness using ${\alpha}-step$ profilometer. The microstructure was analyzed by X-Ray Diffract and Scanning Electron Microscopy(SEM), and mechanical properties were evalua residual stress, microhardness and adhesion tests. Deposition rate of Cr and CrN increased as an almost linear function of target power density from $0.25\mu\textrm{m}/min$ and $0.15\mu\textrm{m}/min$ to $0.43\mu\textrm{m}/min$. Residual stresses of Cr and CrN films were from tensi Ie to compressive stress with an increase of deposi tion rate a compressive stresses were increased as more augmentation of deposition r maximum hardness value of $2300kg/\textrm{mm}^2$ and the best adhesion strength correspond HF 1 were obtained for CrN film synthesized at the highest target densitY($13.2W/\textrm{mm}^2$) owing to high residual compressive stress and increasing mobility.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.12
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• pp.59-64
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• 1996

InSb MIS devices prepared by remote PECVD SiO$_{2}$ were fabricated. The SiO$_{2}$ films on InSb were deposited at atemperature range of 67~190$^{\circ}$C. The effects of deposition temperature on the structural characteristics of the SiO$_{2}$ films evaluated Auger electron spectroscopy showed that atomic raito of silicon to oxygen was 0.5 and composition toms were distributed uniformaly throuout the oxide film. The transition region is about 100$\AA$ for SiO$_{2}$/InSb interface. The leakage current density at 1MV/cm and the breakdownelectric field of the MiS device using SiO$_{2}$ film deposited at 105$^{\circ}$C were about 22 nA/cm$^{2}$ and 3.5MV/cm, respectively. The interface-state density at mid-bandgap extracted from 1 MHz high frequency C-V measurement was about 2X10$^{11}$ cm$^{-2}$eV$^{-1}$.

• Journal of the Korean Chemical Society
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• v.55 no.1
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• pp.81-85
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• 2011

$V_{0.9}Sb_{0.1}O_x$ systems, bulk and deposited on different supports (five types of $\gamma$-aluminas, $\alpha$-alumina, silica-alumina, silica gel, magnesium oxide), have been tested in the oxidative dehydrogenation (ODH) of iso-butane. Catalytic performance of VSb oxides has shown to be highly dependent on the support and the nature of the support decreasing in a series: $\gamma$-$Al_2O_3$ > $\alpha$-$Al_2O_3$ > Si-Al-O > $SiO_2$ $\approx$ MgO $\gg$ unsupported. Variation of the V-Sb-O-loading in the studied range of coverage (0.5-2 theoretical monolayer) only slightly influences the catalysts' activity and selectivity. The best catalytic performance of $\gamma$-alumina-supported $V_{0.9}Sb_{0.1}O_x$ systems can be explained by the optimal surface interaction between support and supported components resulting in the formation of well-spread amorphous active $VO_x$-component with vanadium in a high oxidation state.

• Advances in concrete construction
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• v.11 no.1
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• pp.73-80
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• 2021

Rice Husk Ash (RHA) geopolymer paste activated by sodium aluminate were characterized by X-ray diffractogram (XRD), scanning electron microscope (SEM), energy dispersion X-Ray analysis (EDAX)and fourier transform infrared spectroscopy (FTIR). Five series of RHA geopolymer specimens were prepared by varying the Si/Al ratio as 1.5, 2.0, 2.5, 3.0 and 3.5. The paper focuses on the correlation of microstructure with hardened state parameters like bulk density, apparent porosity, sorptivity, water absorption and compressive strength. XRD analysis peaks indicates quartz, cristobalite and gibbsite for raw RHA and new peaks corresponding to Zeolite A in geopolymer specimens. In general, SEM micrographs show interconnected pores and loosely packed geopolymer matrix except for specimens made with Si/Al of 2.0 which exhibited comparatively better matrix. Incorporation of Al from sodium aluminate were confirmed with the stretching and bending vibration of Si-O-Si and O-Si-O observations from the FTIR analysis of geopolymer specimen. The dense microstructure of SA2.0 correlate into better performance in terms of 28 days maximum compressive strength of 16.96 MPa and minimum for porosity, absorption and sorptivity among the specimens. However, due to the higher water demand to make the paste workable, the value of porosity, absorption and sorptivity were reportedly higher as compared with other geopolymer systems. Correlation regression equations were proposed to validate the interrelation between physical parameters and mechanical strength. RHA geopolymer shows comparatively lower compressive strength as compared to Fly ash geopolymer.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.816-823
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• 1996

Chlorine containing high density plasmas are widely used to etch various materials in the microelectronic device fabrication. In this study, the characteristics of inductively coupled $Cl_2(O_2/N_2$) plasmas and their effects on the formation of silicon etching have been investigated using a Langmuir probe, quadrupole mass spectrometry(QMS), X-ray photoelectron spectroscopy(XPS), and Scanning Electron Microscopy(SEM). The addition of oxygen for chlorine plasmas reduced ion current densities and chlorine radical densities compared to the nitrogen addition by the recombination of oxygen with chlorine. Also, when silicon is etched in $Cl_2/O_2$ plasmas, etch products recombined with oxygen such as $SiCl_xO_y$ emerged. However, when nitrogen is added to chlorine, etch products recombined with nitrogen or Si-N bondings on the etched silicon surface were not found. All the silicon etch characteristics were dependent on the plasma conditions such as ion density, radical density, etc. As a result sub micron vertical silicon trench etch profiles could be effectively formed using optimized etch conditions for $Cl_2/O_2\; and \;Cl_2/N_2$ gas combinations.

• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.53-59
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• 2015

The field-effect transistors (FETs) with a graphene-based p-n junction channel were fabricated using the patterned self-assembled monolayers (SAMs). The self-assembled 3-aminopropyltriethoxysilane (APTES) monolayer deposited on $SiO_2$/Si substrate was patterned by hydrogen plasma using selective coating poly-methylmethacrylate (PMMA) as mask. The APTES-SAMS on the $SiO_2$ surface were patterned using selective coating of PMMA. The APTES-SAMs of the region uncovered with PMMA was removed by hydrogen plasma. The graphene synthesized by thermal chemical vapor deposition was transferred onto the patterned APTES-SAM/$SiO_2$ substrate. Both p-type and n-type graphene on the patterned SAM/$SiO_2$ substrate were fabricated. The graphene-based p-n junction was studied using Raman spectroscopy and X-ray photoelectron spectroscopy. To implement low voltage operation device, via ionic liquid ($BmimPF_6$) gate dielectric material, graphene-based p-n junction field effect transistors was fabricated, showing two significant separated Dirac points as a signature for formation of a p-n junction in the graphene channel.

• Journal of the Korean institute of surface engineering
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• v.43 no.6
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• pp.266-271
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• 2010

Ternary Mo-Cu-N films were deposited on Si wafer substrates with various copper contents by magnetron sputtering method using Mo target and Cu target in $Ar/N_2$ gaseous atmosphere. As increasing $N_2$ pressure, the microstructure of Mo-N films changed from ${\gamma}-Mo_2N$ of (111) having face-centered-cubic (FCC) structure to $\delta$-MoN of (200) having hexagonal structure. Detailed the microstructures of the Mo-Cu-N coatings were studied by X-ray diffraction, scanning electron microscopy and field emission transmission electron microscope. The results indicated that the incorporation of copper into the growing Mo-N coating led to the $Mo_2N$ and MoN crystallites were more well-distributed and refined and the copper existed in grain boundary. Ternary Mo-Cu-N films had a composite microstructure of the nanosized crystal crystalline ${\gamma}-Mo_2N$ and $\delta$-MoN surrounded by amorphous $Cu_3N$ phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.844-849
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• 2011

Two kind of Ag-pastes were prepared for integrating the bulk Si solar cell. One is the Ag-paste with Pb-based glass frit and the other is that with Bi-based glass frit. The pastes were the mixture of 84 wt% Ag, 2 wt% glass frit, 11 wt% solvent of buthyl cabitol acetate, and 2 wt% additives. After fabricating the Ag-pastes, they was coated on a $SiN_x$/n+/p- stacks of a commercial mono-Si solar cell. The solar cell efficiency was 17.6% in the case of the Pb-based Ag-paste. However that was 16.2% in the solar cell integrated with the Bi-based Ag-paste. The lower performance in Bi-based Ag-paste was caused by the higher series resistance and the lower shunt resistance in comparison with the Pb-based Ag-paste.

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.212-217
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• 2000

Dielectric thin films for TFT(thin film transistor)s, such as silicon nitride$(Si_3N_4)$ and silicon oxide$(SiO_2)$, are usually deposited at $200~300^{\circ}C$. In this study, authors have tried to form dielectric films not by deposition but by oxidation with ECR(Electron Cyclotron Resonance) oxygen plasma, to improve the interface properties was not intensionally heated during oxidation. THe oxidation was performed consecutively without breaking vacuum after the deposition of a-Si: H films on the substrate to prevent the introduction of impurities. In this study, especially pulse mode of microwave power has been firstly tried during FCR oxygen plasma formation. Compared with the case of the continuous wave mode, the oxidation with the pulsed ECR results in higher quality silicon oxide$SiO_X$ films in terms of stoichiometry of bonding, dielectric constants and surface roughness. Especially the surface roughness of the pulsed ECR oxide films dramatically decreased to one-third of that of the continuous wave mode cases.