• KSTLE International Journal
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• v.6 no.1
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• pp.13-16
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• 2005

Friction characteristics at nano-scale of self-assembled monolayers (SAMs) having different chain lengths and end groups were experimentally studied.51 order to understand the effect of the chain length and end group on the nano-scalefriction: (1) two different SAMs of shorter chain lengths with different end groups such as methyl and phenyl groups, and (2)four different kinds of SAMs having long chain lengths (C10) with end groups of fluorine and hydrogen were coated on siliconwafer (100) by dipping method and Chemical Vapour Deposition (CVD) technique. Their nano-scale friction was measuredusing an Atomic Force Microscopy (AFM) in the range of 0-40 nN normal loads. Measurements were conducted at the scanning speed of 2 $mu$m/s for the scan size of 1$mu$m x 1 $mu$m using a contact mode type $Si_3N_4$ tip (NPS 20) that had a nominal spring constant0.58 N/m. All experiments were conducted at anlbient temperature (24 $pm$1$circ$C) and relative humidity (45 $pm$ 5%). Results showedthat the friction force increased with applied normal load for all samples, and that the silicon wafer exhibited highest frictionwhen compared to SAMs. While friction was affected by the inherent adhesion in silicon wafer, it was influenced by the chainlength and end group in the SAMs. It was observed that the nano-friction decreased with the chain length in SAMs. In the caseof monolayers with shorter length, the one with the phenyl group exhibited higher friction owing to the presence of benBenerings that are stiffer in nature. In the case of SAMs with longer chain length, those with fluorine showed friction values relativelyhigher than those of hydrogen. The increase in friction due to the presence of fluorine group has been discussed with respect tothe siBe of the fluorine atom.

• International Journal of Concrete Structures and Materials
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• v.8 no.3
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• pp.213-228
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• 2014

Alkali-activated binder (AAB) is recently being considered as a sustainable alternative to portland cement (PC) due to its low carbon dioxide emission and diversion of industrial wastes and by-products such as fly ash and slag from landfills. In order to comprehend the behavior of AAB, detailed knowledge on relations between microstructure and mechanical properties are important. To address the issue, a new approach to characterize hardened pastes of AAB containing fly ash as well as those containing fly ash and slag was adopted using scanning electron microscopy (SEM) and energy dispersive X-ray spectra microanalyses. The volume stoichiometries of the alkali activation reactions were used to estimate the quantities of the sodium aluminosilicate (N-A-S-H) and calcium silicate hydrate (CSH) produced by these reactions. The 3D plots of Si/Al, Na/Al and Ca/Si atom ratios given by the microanalyses were compared with the estimated quantities of CSH(S) to successfully determine the unique chemical compositions of the N-A-S-H and CSH(S) for ten different AAB at three different curing temperatures using a constrained nonlinear least squares optimization formulation by general algebraic modeling system. The results show that the theoretical and experimental quantities of N-A-S-H and CSH(S) were in close agreement with each other. The $R^2$ values were 0.99 for both alkali-activated fly ash and alkali-activated slag binders.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.377-377
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• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

• Transactions on Electrical and Electronic Materials
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• v.7 no.5
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• pp.257-261
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• 2006

Nano-structured carbon nitride $(CN_x)$ films were prepared by reactive RF magnetron sputtering with a DC bias at various deposition conditions, and the physical and electrical properties were investigated. FTIR spectrum indicated an ${alpha}C_3N_4$ peak in the films. The carbon nitride film deposited on Si substrate had a nano-structured surface morphology. The grain size was about 20 nm and the deposition rate was $1.7{\mu}m/hr$. When the $N_2/Ar$ ratio was 3/7, the level of nitrogen incorporation was 34.3 at%. The film had a low dielectric constant. The metal-insulator-semiconductor (MIS) capacitors that the carbon nitride was deposited as insulators, exhibited a typical C-V characteristics.

• Journal of the Korean Mathematical Society
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• v.31 no.4
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• pp.645-657
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• 1994

If S is a semiring of nonnegative reals, which linear operators T on the space of $m \times n$ matrices over S preserve the column rank of each matrix\ulcorner Evidently if P and Q are invertible matrices whose inverses have entries in S, then $T : X \longrightarrow PXQ$ is a column rank preserving, linear operator. Beasley and Song obtained some characterizations of column rank preserving linear operators on the space of $m \times n$ matrices over $Z_+$, the semiring of nonnegative integers in [1] and over the binary Boolean algebra in [7] and [8]. In [4], Beasley, Gregory and Pullman obtained characterizations of semiring rank-1 matrices and semiring rank preserving operators over certain semirings of the nonnegative reals. We considers over certain semirings of the nonnegative reals. We consider some results in [4] in view of a certain column rank instead of semiring rank.

• Proceedings of the KAIS Fall Conference
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• 2012.05a
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• pp.431-435
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• 2012

Aluminum containing mesoporous molecular sieves Al-SBA-1 ($n_{Si}/n_{Al}$= 2, 5, 10, 15) was synthesized with a one-step method, and the catalyst was characterized with powder X-ray diffraction (XRD), nitrogen adsorption-desorption, thermogravimetric analysis (TGA), scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FT-IR). Finally, we studied the catalytic activities of Al-SBA-1 molecular sieves in Pechmann reaction of 3-methoxyphenol and Ethyl acetoacetate to get 7-methoxy-4-methyl coumarin. Four parameters reaction temperature, time, catalyst weight and reactants ratio were optimized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.283-288
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• 2004

We have fabricated MIM capacitors for MMIC applications, with capacitances as high as 600pF/$\textrm{mm}^2$ and excellent electrical properties of the insulator layer. Silicon nitride thin film is the desirable material for MMIC capacitor fabrication. Standard MIM capacitance in MMIC is 300pF/$\textrm{mm}^2$ with an insulator layer thickness of more than 2000$\AA$. However, capacitors with thin insulator layers have breakdown voltages as low as 20V. We have deposited insulator layers by PECVD in our MIM structure with an air bridge between the top metal and the contact pad. The PECVD process was optimized for fabricating the desired capacitors to be used in MMIC. Silicon nitride(Si$_{x}$N$_{y}$) thin films of about 1000$\AA$ thick show capacitances of about 600pF/$\textrm{mm}^2$, and breakdown voltages above 70V at 100nA.A.A.

• Journal of Power System Engineering
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• v.11 no.4
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• pp.92-97
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• 2007

This study aims at investigating the wear behavior of thermally sprayed Ni-based self-flux alloy coatings against different counterparts. Ni-based self-flux alloy powders were flame-sprayed onto a carbon steel substrate and then heat-treated at temperature of $1000^{\circ}C$. Dry sliding wear tests were performed using the sliding speeds of 0.2 and 0.8 m/s and the applied loads of 5 and 20 N. AISI 52100, $Al_2O_3$, $Si_3N_4$ and $ZrO_2$ balls were used as counterpart materials. Wear behavior of Ni-based self-flux alloy coatings against different counterparts were studied using a scanning electron microscope(SEM) and energy dispersive X-ray spectroscopy (EDX). It was revealed that wear behavior of Ni-based self-flux alloy coatings were much influenced by counterpart materials.

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.498-504
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• 1996

The synthesis of carbon nitride thin films with high nitrgen concentration was accomplished by reactive supttering at relatively high working pressure. In conventional reactive sputter-deposition of carbon nitride films, working pressure was 0.3-5Pa and the ratio of nitrogen to carbon(N/C ratio) in the films was less than 0.5. In this study, amorphous carbon nitride films with the N/C ratio $\tickapprox$ 1.0 were prepared on Si(100). substrates at higher pressure, 20-60 Pa. Structural analyses with Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy revealed that the films prepared consisted of triazine-like plain network.

• Transactions on Electrical and Electronic Materials
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• v.13 no.1
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• pp.6-9
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• 2012

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$) of ZnO thin films in $N_2/Cl_2$/Ar inductivity coupled plasma. A maximum etch rate and selectivity of 108.8 nm/min and, 3.21, respectively, was obtained for ZnO thin film at a $N_2/Cl_2$/Ar gas mixing ratio of 15:16:4 sccm. The plasmas were characterized by optical emission spectroscopy. The x-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment. An accumulation of low volatile reaction products on the etched surface was also shown. Based on this data, an ion-assisted chemical reaction is proposed as the main etch mechanism for plasmas containing $Cl_2$.