• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.7
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• pp.288-292
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• 2003

AlM thin film has been deposited on A1$_2$O$_3$ substrate by reactive radio frequency(RF) magnetron sputtering method under various operating conditions such as working pressure, fraction of nitrogen partial pressure, and substrate temperature. Scanning Electron Microscope(SEM), X-ray Diffraction(XRD), and Atomic Force Microscope(AFM) have been measured to find out structural properties and preferred orientation of AlN thin films. SAW velocity of IDTs/AlN/Si structure was about 5038［㎧］ at the center frequency of 251.9［MHz］ and insertion loss was measured to be relatively low value of 35.6［dB］. SAW velocity of IDTs/AlN/A1$_2$O$_3$ structure was improved to be about 5960［㎧］ at the center frequency of 296.7［MHz］.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.313-314
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• 2007

AlN is used a wide variety of applications such as electroacoustic devices, blue diode and metal-insulator-semiconductor structures. AlN thin films were deposited on Si substrates by rf sputter technique with low temperature process. The orientation and morphology of AlN thin films at various power in the range from 150 to 300 w was studied. X-ray diffraction (XRD), full width at half-maximum (FWHM) and field emission scanning electron microscopy were employed to characterize the deposited films. The c-axis orientation along (002) Plane at experimental results was enhanced with the increasing of the rf power from 150 to 300 w and the surface morphology of the films showed a homogeneous and nano-sized microstructure.

• Journal of the Korean Electrochemical Society
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• v.15 no.2
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• pp.90-94
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• 2012

We report nanostructure electrodes with $TiO_2$ as a core and carbon as a shell ($TiO_2$@C) for oxygen reduction in alkaline solution. The structure of core-shell electrodes is characterized by transmission electron microscopy, Raman spectroscopy, X-ray diffraction method, and X-ray photoelectron microscopy. The electrochemical properties of the $TiO_2$@C electrodes are characterized using a potentiostat and compared with those of carbon supported Pt catalyst. In particular, the core-shell electrode with dominant pyridinic-N component exhibits an imporved electrocatalytic activity for oxygen reduction reaction in alkaline solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.305-306
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• 2008

본 논문에서는 PRAM 에서 기록매질로 이용될 수 있는 최적의 물질을 찾고자 $Ge_2Sb_2Te_5$ 박막에 Al을 첨가하여 비정질-결정질 천이시의 원자구조와 상변화 특성간의 관계를 연구하였다. 이 실험에 사용된 $Al_x(Ge_2Sb_2Te_5)_{1-x}$ 조성은 5N의 금속 파우더를 용융-냉각법으로 벌크를 제작하였고 열증착 방법으로 Si (100) 및 유리 (corning glass, 7059) 기판위에 200nm 두께로 박막을 증착하였다. 비정질 박막의 상변화에 따른 반사도 차이를 평가하기 위해서 658 nm의 LD가 장착된 나노펄스 스캐너를 이용하여 power; 1~17mW, pulse duration; 10~460 ns의 범위에서 각 조성의 비정질-결정질 상변화속도를 측정, 비교 분석하였다. 또한 각각의 박막을 $100^{\circ}C$ 에서 $400^{\circ}C$ 까지 $50^{\circ}C$ 간격으로 $N_2$ 분위기에서 1시간동안 열처리 한 후 XRD와 UV-Vis-NIR spectrophotometer를 사용하여 각 상의 구조분석 및 광학적 특성을 분석하였다. 또한 4-point probe로 면저항을 측정하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Journal of the Korean Society for Nondestructive Testing
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• v.14 no.1
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• pp.7-15
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• 1994

The two-dimensional elastoplastic analysis was peformed to reveal a detail residual stress distribution of ceramic/metal joint specimen using finite element method and X-ray method. The highest tensile residual stress, ${\sigma}_x$ perpendicular to the interface appeared at the edge of the ceramic near the interface. In the vicinity of the interface, the high stress concentration occurs and residual stress distributes three-dimensionally. Therefore, the measured stress distribution differed remarkably from the result of the two-dimensional finite-element analysis. Especially at the center of the specimen near the interface, the residual stress, ox obtained from the finite element analysis was compressive, whereas X-ray measurement yielded tensile ${\sigma}_x$. Therefore, it is also attempted to investigate the finite element model for the prediction of residual stress ${\sigma}_x$ distributed nearly the interface of joint.

• Current Photovoltaic Research
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• v.11 no.2
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• pp.39-43
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• 2023

Carrier-selective contacts (CSCs) solar cells are considerably attractive on highly efficient crystalline silicon heterojunction (SHJ) solar cells due to their advantages of high thermal tolerance and the simple fabrication process. CSCs solar cells require a hole selective contact (HSC) layer that selectively collects only holes. In order to selectively collect holes, it must have a work function characteristic of 5.0 eV or more when contacted with n-type Si. The VO_x, NiO_x, and CuI_x thin films were fabricated and analyzed respectively to confirm their potential usage as a hole-selective contact (HSC) layer. All thin films showed characteristics of band-gap engergy > 3.0 eV, work function > 5.0 eV and minority carrier lifetime > 1.5 ms.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.7
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• pp.486-493
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• 2003

Schottky type A $l_{0.33}$G $a_{0.67}$N ultraviolet photodetectors were fabricated on the MOCVD grown AlGaN/ $n^{＋}$-GaN and AlGaN/AlGaN interlayer/ $n^{＋}$-GaN structures. The grown layers have the carrier concentrations of -$10^{18}$, and the mobilities were 236 and 269 $\textrm{cm}^2$/V.s, respectively. After mesa etching by ICP etching system, the Si3N4 layer was deposited for passivation between the contacts and Ti/AL/Ni/Au and Pt were deposited for ohmic and Schottky contact, respectively. The fabricated Pt/A $l_{0.33}$G $a_{0.67}$N Schottky diode revealed a leakage current of 1 nA for samples with interlayer and 0.1$\mu\textrm{A}$ for samples without interlayer at a reverse bias of -5 V. In optical measurement, the Pt/A $l_{0.33}$G $a_{0.67}$N diode with interlayer showed a cut-off wavelength of 300 nm, a prominent responsivity of 0.15 A/W at 280 nm and a UV-visible extinction ratio of 1.5x$10^4./TEX>.

• Korean Chemical Engineering Research
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• v.53 no.1
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• pp.103-110
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• 2015

In this work, the performance of various promoters was investigated used in $CO_2$ separation from the gases emitted from steel-making process using gas hydrate technology. The studied promoters are tetrahydrofuran (THF), propylene oxide and 1,4-dioxane, which are all expected to form a structure II hydrate, and the target gases include $CO_2/N_2$ mixed gases ($CO_2/N_2$ = 20/80 and 40/60) and Blast Furnace Gas (BFG). The phase equilibrium points were measured when each promoter was added with various concentrations. For fast acquisition of abundant data, the "continuous" Quartz crystal microbalance (QCM) method was employed. In addition, the crystal structure of each gas hydrate was analyzed by Powder X-ray diffraction (PXRD).

• Korean Journal of Agricultural Science
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• v.2 no.1
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• pp.61-100
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• 1975

This study has been made to find out the possibilty of successfully using the following $K_2O$ recommended equation $K_2O\;kg/10a=(Ko/\sqrt{Ca+Mg}-Ks/\sqrt{Ca+Mg})sqrt{Ca+Mg}.\;47.\;B\;D$. where $Ko/sqrt{Ca+Mg}=0.03518+0.0007658\;Sio_2/O.M$. $K_Ssqrt{Ca+Mg}$=Exchangeable K me/100g/$\sqrt{Total\;soluble(Ca+Mg)me/100g\;in\;Soil}$ B. D. =Bulk density of top soil, when the dose of Nitrogen for rice is estimated from the following equation: $N\;kg/10a=(4.2+0.096\;SiO_2/O.M).F$ where $F=0.907+0.263x-0.013x^2$ $SiO_2/O.M=(available\;SiO_2=ppm)/(organic\;matter\;%)$in soil For this. two field experiments. one in sandy and the other in clay paddy soil. have been conducted using 3 levels of wollastonite (0, 500, 100kg/10a) as main treatments; 3 levels of $K_2O$ application were used as sub-plots. These were as follows : (1) 8kg of $K_2O$/10a regardless of the K activity-$K/\sqrt{Ca+Mg}$; (2) kg of $K_2O$/10a estimated from the above equation. and (3) same as (2) above plus additional 30% of $K_2O$. The dose of N kg/ 10a was determined from the above equation based on the value of $SiO_2$/O.M. ratio in each treatment. There were three replications. The leading variety of rice in Chung Chong Nam Do area. Akibare (introduced from Japan) was used. The data obtained. through soil and plant analysis and growth and yield observations. have been throughly examined to attain the following summarized conclusions. 1. The nitrogen dose. estimated from the above equation. was in excess for optimum growth of the rice variety Akibare; indicating the necessity of modification onthe value of "F" or the constants in the equation. The concept of using $SiO_2$/O.M. in the equation was shown to be applicable. 2. The dose of potash. estimated from the respective equation given above. also was in excess of the rice requirements indicating the necessity of minor change in the estimation of $Ko/\sqrt{Ca+Mg}$ value and some great modification in the calculation of $Ks/\sqrt{Ca+Mg}$ value for the equation; however the concept of using $K/\sqrt{Ca+Mg}$ as a basis of $K_2O$ recommendation was shown to be quite reasonable. 3. It was found. from the correlation study using the data of paddy yield and amount of $K_2O$ absorbed by rice plants that the substitution of the value of $Ks/\sqrt{Ca+Mg}$ in the equation for the vaule $Ks/\sqrt{Ca+Mg}=0.037+0.78K\;me/100g$ soil was much more applicable than using the value calculated from the data of soil and wollastonite analysis.