• 방사성폐기물학회지
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• 제7권2호
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• pp.93-100
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• 2009

본 연구는 12 성분의 모의 FP-산화물 (simulated fission products oxide)을 대상으로 하여 $(NH_4)_2CO_3-H_2O_2$ 탄산염 용액에서 U을 산화 용해할 때 U과 함께 용해되는 FP의 산화 용해특성을 규명하였다. FP-산화물의 산화용해 시 FP의 최소 용해를 위한 산화제로는 $H_2O_2$가 가장 우수하였다. 0.5 M $(NH_4)_2CO_3-0.5$ M $H_2O_2$ 계에서 U과 함께 산화 용해되는 원소로는 Re, Te, Cs, Mo 등이고, 2시간 용해에서 Re과 Te은 각각 98${\pm}$2%, Cs은 94${\pm}$2%, Mo는 29${\pm}$2%가 용해되었다. Re, Te 및 Cs의 용해는 각각 $(NH_4)_2CO_3$ 용액에서의 높은 용해도에 기인하여 $H_2O_2$ 함유 여부에 관계없이 매우 빠르게 일어나고, $(NH_4)_2CO_3$ 농도 및 $H_2O_2$의 농도증가에 거의 영향을 받지 않았다. 반면에 $H_2O_2$에 의한 Mo의 산화 용해는 $(NH_4)_2CO_3$ 농도에 무관하게 매우 느리게 일어나고, 4시간 용해에서 약 33%가 용해되었다. 그리고 용액 내 pH는 FP-산화물의 용해에 가장 큰 영향을 미치는 요인으로 U의 산화 용해 시 FP의 공용해를 방지하기 위해서 pH 9${\sim}$10에서 수행하는 것이 효과적이었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.83.2-83.2
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• 2007

• 한국재료학회지
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• 제15권12호
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• pp.814-817
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• 2005

In order to enhance energy efficiency in high electric conversion devices such as Power transformers, which need to have high power properties, an alloy design approach in $Pb(Zr,Ti)O_3(PZT)$ base ceramic system was attempted $0.03Pb(Sb_{0.5}Nb_{0.5})O_3-0.03Pb(Mn_{1/3}Nb_{2/3})O_3-(0.94-x)PbTiO_3-xPbZrO_3$[PSN-PMN- PZT] ceramics were synthesized by conventional bulk ceramic processing technique. To improve power properties, the various Zr/Ti ratio was varied ]lear their morphotropic phase boundary (MPB) composition of PSN-PMN-PZT system and their effects on subsequent piezoelectric and dielectric properties for the transformer application at high power were systematically investigated using an impedance analyzer. Microstructure and phase information were characterized using X-ray diffractometer (XRD), a scanning electron microscope (SEM) and others. When the Zr/Ti ratio was 0.415/0.465, the value of $Q_m\;and\;k_p$ were shown to reach to the maximum, indicating that this alloy design can be a feasible composition :or high power transformer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.164-164
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• 2015

최근에 고효율의 적색 발광체를 개발하고자 무기물 모체에 다양한 활성제 이온을 주입하는 연구가 상당한 관심을 끌고 있다. 본 연구에서는 발광 효율이 높은 적색 형광체 분말을 제조하고자 두 종류의 활성제 이온 $Eu^{3+}$와 $Sm^{3+}$가 도핑된 $Y_2MoO_6$형광체 분말을 고체상태 반응법을 사용하여 전기로에서 $400^{\circ}C$에서 하소와 $1100^{\circ}C$에서 소결공정을 통하여 제조하였다. 활성제 이온의 몰 비에 따른 적색 형광체의 결정 구조, 발광과 흡광 스펙트럼을 조사하였다. 파장 299 nm로 여기 시킨 $Y_2MoO_6:Eu^{3+}$ 경우, 발광 세기가 가장 강한 611 nm의 주 피크를 방출하는 적색 스펙트럼이 관측되었으며, 함량이 0.01 mol에 0.2 mol로 증가함에 따라 611 nm의 주 적색 발광 스펙트럼의 세기가 증가하는 경향을 나타내었다. 파장 611 nm로 제어한 흡광 스펙트럼은 299 nm에 피크를 갖는 전하전달밴드 (CTB) 이었다 [그림 참조].

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.396-396
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• 2013

The resistive random access memory (ReRAM) has several advantages to apply next generation non-volatile memory device, because of fast switching time, long retentions, and large memory windows. The high mobility of monolayered graphene showed several possibilities for scale down and electrical property enhancement of memory device. In this study, the monolayered graphene grown by chemical vapor deposition was transferred to $SiO_2$ (100 nm)/Si substrate and glass by using PMMA coating method. For formation of metal-oxide nanoparticles, we used a chemical reaction between metal films and polyamic acid layer. The 50-nm thick BPDA-PDA polyamic acid layer was coated on the graphene layer. Through soft baking at $125^{\circ}C$ or 30 min, solvent in polyimide layer was removed. Then, 5-nm-thick indium layer was deposited by using thermal evaporator at room temperature. And then, the second polyimide layer was coated on the indium thin film. After remove solvent and open bottom graphene layer, the samples were annealed at $400^{\circ}C$ or 1 hr by using furnace in $N_2$ ambient. The average diameter and density of nanoparticle were depending on annealing temperature and times. During annealing process, the metal and oxygen ions combined to create $In_2O_3$ nanoparticle in the polyimide layer. The electrical properties of $In_2O_3$ nanoparticle ReRAM such as current-voltage curve, operation speed and retention discussed for applictions of transparent and flexible hybrid ReRAM device.

• 한국재료학회지
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• 제27권8호
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• pp.416-421
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• 2017

V-substituted $SrTiO_3$ thermoelectric oxide materials were fabricated by the conventional solid state reaction method. From X-ray diffraction pattern analysis, it can be clearly seen that almost every vanadium atom incorporated into the $SrTiO_3$ provided charge carriers. The electrical conductivity ${\sigma}$, Seebeck coefficient S, and thermal conductivity k were investigated in a high temperature regime above 1000 K. The addition of vanadium significantly reduced the thermal conductivity and enhanced the Seebeck coefficient, as well as the electrical conductivity, thus enhancing the ZT value. A maximum ZT value of 0.084 at 673 K was observed for the sample with 1.0 mole% of vanadium substitution. In this study, the reason for the enhanced thermoelectric properties via vanadium addition was also investigated.

• 한국전기전자재료학회논문지
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• 제16권6호
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• pp.538-548
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• 2003

We studied effects by Re$_2$O$_3$(R=Dy, Gd, Ho) addition on the properties of Mn-Zn ferrite. The doping concentration range from 0.05 wt% to 0.25 wt%. All samples were prepared by standard fabrication of ceramics. With increasing the rare earth oxides, specific density and initial permeability increased on the whole. But, the tendencies such as upper result had the measured value on limitation and characteristics saturated or decreased properties after that. In case of excessive addition of additive beyond some level, initial permeability properties of ferrite have gone down in spite of anomalous grain. With increasing the content of additive, both the real and imaginary component of complex permeability and the magnetic loss (tan$\delta$) increased. Because the increased rate of real component had higher than imaginary component, magnetic loss increased none the less for increasing the real component related with magnetic permeability. But, the magnetic loss of ferrite doped with the rare earth oxides was lower than that of Mn-Zn ferrite at any rate. The small amount of present rare earth oxides in Mn-Zn ferrite composition led to enhancement of resistivity in bulk, and more so in the grain boundary. It was seem to be due to the formation of mutual reaction such as between iron ions and rare earth element ions.

• Applied Microscopy
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• 제42권4호
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• pp.207-211
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• 2012

We examined the electrical properties and microstructure of NiO produced using a sol-gel method and Ni nitrate hexahydrate ($Ni[NO_3]_2{\cdot}6H_2O$) to investigate if this NiO thin film can be used as an insulator layer for resistance random access memory (ReRAM) devices. It was found that as-prepared NiO film was polycrystalline and presented as the nonstoichiometric compound $Ni_{1+x}O$ with Ni interstitials (oxygen vacancies). Resistances-witching behavior was observed in the range of 0~2 V, and the low-resistance state and high-resistance state were clearly distinguishable (${\sim}10^3$ orders). It was also demonstrated that NiO could be patterned directly by KrF eximer laser irradiation using a shadow mask. NiO thin film fabricated by the sol-gel method does not require any photoresist or vacuum processes, and therefore has potential for application as an insulating layer in low-cost ReRAM devices.

• 한국재료학회지
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• 제20권5호
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• pp.241-245
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• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.359-359
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• 2012

Trivalent rare-earth ($RE^{3+}=Eu^{3+}\;and\;Tb^{3+}$) ions activated $CaGd_4O_7$ phosphors were synthesized by a sol-gel process. After annealing at $1,500^{\circ}C$, the XRD patterns of the phosphor confirmed their monoclinic structure. The photoluminescence excitation spectra of $Eu^{3+}$ and $Tb^{3+}$ doped $CaGd_4O_7$ phosphor shows the broad-band excitations in the shorter wavelength region due to charge transfer band of completely filled $O^{2-}$ to the partially filled $Eu^{3+}$ ions and f-d transitions of $Tb^{3+}$ ions, respectively. The photoluminescence spectra show that the reddish-orange ions and green emission for $Eu^{3+}$ and $Tb^{3+}$ ions, respectively. Owing to the importance of thermal quenching property in the technological parameters, the temperature-dependent luminescence properties of these phosphors were measured for examing the suitability of their applications in the development of light emitting diodes (LEDs). In addition to those measurements, the cathodoluminescence properties were examined by changing the acceleration voltage and filament current. The calculated chromaticity coordinates of these phosphors were close proximity to those of commercially available phosphors for LED and field emission display devices.