• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process ws performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• Journal of the Korean Mathematical Society
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• v.48 no.2
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• pp.397-420
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• 2011

In this paper we study the structure of closed weakly dense ideals in Privalov spaces $N^p$ (1 < p < $\infty$) of holomorphic functions on the disk $\mathbb{D}$ : |z| < 1. The space $N^p$ with the topology given by Stoll's metric [21] becomes an F-algebra. N. Mochizuki [16] proved that a closed ideal in $N^p$ is a principal ideal generated by an inner function. Consequently, a closed subspace E of $N^p$ is invariant under multiplication by z if and only if it has the form $IN^p$ for some inner function I. We prove that if $\cal{M}$ is a closed ideal in $N^p$ that is dense in the weak topology of $N^p$, then $\cal{M}$ is generated by a singular inner function. On the other hand, if $S_{\mu}$ is a singular inner function whose associated singular measure $\mu$ has the modulus of continuity $O(t^{(p-1)/p})$, then we prove that the ideal $S_{\mu}N^p$ is weakly dense in $N^p$. Consequently, for such singular inner function $S_{\mu}$, the quotient space $N^p/S_{\mu}N^p$ is an F-space with trivial dual, and hence $N^p$ does not have the separation property.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.13 no.6
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• pp.221-228
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• 2013

It is impossible directly to find a prime number p,q of a large semiprime n = pq using Trial Division method. So the most of the factorization algorithms use the indirection method which finds a prime number of p = GCD(a-b, n), q=GCD(a+b, n); get with a congruence of squares of $a^2{\equiv}b^2$ (mod n). It is just known the fact which the area that selects p and q about n=pq is between $10{\cdots}00$ < p < $\sqrt{n}$ and $\sqrt{n}$ < q < $99{\cdots}9$ based on $\sqrt{n}$ in the range, [$10{\cdots}01$, $99{\cdots}9$] of $l(p)=l(q)=l(\sqrt{n})=0.5l(n)$. This paper proposes the method that reduces the range of p using information obtained from n. The proposed method uses the method that sets to $p_{min}=n_{LR}$, $q_{min}=n_{RL}$; divide into $n=n_{LR}+n_{RL}$, $l(n_{LR})=l(n_{RL})=l(\sqrt{n})$. The proposed method is more effective from minimum 17.79% to maxmimum 90.17% than the method that reduces using $\sqrt{n}$ information.

• Journal of applied mathematics & informatics
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• v.25 no.1_2
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• pp.375-382
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• 2007

We Study, firstly, the dynamics of the difference equation $x_{n+1}\;=\;{\alpha}\;+\;{\frac{x^p_n}{x^p_{n-1}}}$, with $p\;{\in}\;(0,\;1)\;and\;{\alpha}\;{\in}\;[0,\;{\infty})$. Then, we generalize our results to the (k + 1)th order difference equation $x_{n+1}\;=\;{\alpha}\;+\;{\frac{x^p_n}{nx^p_{n-k}}$, $k\;=\;2,\;3,\;{\cdots}$ with positive initial conditions.

• Korean Journal of Mathematics
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• v.7 no.2
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• pp.227-233
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• 1999

Let $k$ be a real abelian field and $k_{\infty}={\bigcup}_{n{\geq}0}k_n$ be its $\mathbb{Z}_p$-extension for an odd prime $p$. For each $n{\geq}0$, we denote the class number of $k_n$ by $h_n$. The following is a well known theorem: Theorem. Suppose $p$ remains inert in $k$ and the prime ideal of $k$ above $p$ totally ramifies in $k_{\infty}$. Then $p{\nmid}h_0$ if and only if $p{\nmid}h_n$ for all $n{\geq}0$. The aim of this paper is to generalize above theorem: Theorem 1. Suppose $H^1(G_n,E_n){\simeq}(\mathbb{Z}/p^n\mathbb{Z})^l$, where $l$ is the number of prime ideals of $k$ above $p$. Then $p{\nmid}h_0$ if and only if $p{\nmid}h_n$. Theorem 2. Let $k$ be a real quadratic field. Suppose that $H^1(G_1,E_1){\simeq}(\mathbb{Z}/p\mathbb{Z})^l$. Then $p{\nmid}h_0$ if and only if $p{\nmid}h_n$ for all $n{\geq}0$.

• Journal of IKEEE
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• v.24 no.4
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• pp.1167-1171
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• 2020

In this work, we proposed a graded gate-doping structure to alleviate an electric field in p-GaN gate layer in order to improve the reliability of normally-off GaN power devices. In a TCAD simulation by Silvaco Atlas, a distribution of the graded p-type doping concentration was optimized to have a threshold voltage and an output current characteristics as same as the reference device with a uniform p-type gate doping. The reduction of an maximum electric field in p-GaN gate layer was observed and it suggests that the gate reliability of p-GaN gate HFETs can be improved.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.56.2-56.2
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• 2010

An improvement in the optical and structural properties of p-GaN was obtained by using antimony (Sb) as a surfactant during p-GaN growth. Two different growth temperatures of p-GaN such as $1030^{\circ}C$ and $900^{\circ}C$ were considered. Keeping the growth conditions for p-GaN constant, Sb was introduced during p-GaN growth while varying the [Sb]/([Ga]+[Mg]) flow ratio. [Sb]/([Ga]+[Mg]) flow ratio will be denoted as SGM ratio for convenience. SGM ratio of 0, 0.015 and 0.03% were considered for high temperature p-GaN growth. SGM ratio of 0, 0.005, 0.01 and 0.02% were considered for low temperature p-GaN growth. The analysis results suggest that using the optimum SGM ratio during p-GaN growth greatly improves the optical and structural properties of the p-GaN.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.4
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• pp.180-186
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• 2023

Positive bias temperature instability (PBTI) degradation of n⁺ and p⁺ poly-Si gate high-voltage(HV) SiO2 dielectric nMOSFETs was investigated. Unlike the expectation that degradation of n⁺/nMOSFET will be greater than p⁺/nMOSFET owing to the oxide electric field caused by the gate material difference, the magnitude of the PBTI degradation was greater for the p⁺/nMOSFET than for the n⁺/nMOSFET. To analyze the cause, the interface state and oxide charge were extracted for each case, respectively. Also, the carrier injection and trapping mechanism were analyzed using the carrier separation method. As a result, it has been verified that hole injection and trapping by the p⁺ poly-Si gate accelerates the degradation of p⁺/nMOSFET. The carrier injection and trapping processes of the n⁺ and p⁺ poly-Si gate high-voltage nMOSFETs in PBTI are detailed in this paper.

• Journal of the korean society of oceanography
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• v.34 no.2
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• pp.86-94
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• 1999

An investigation was conducted to determine limiting nutrients in the bay systems of the southern coastal area of Korea. The elemental composition of C, N, and P in suspended particulate matter was monitored nearly monthly in Chinhae and Koje Bays and seasonally in Deukryang Bay for 2 years. Atomic C:N ratio in particulate matter ranges from 4.3 to 9.6, typical of marine phytoplankton. C:P and N:P ratios vary from the Redfield ratio to 229 (C:P) and 37 (N:P). A constant C:N ratio of 6.87 from regression of particulate C and N concentrations demonstrates that the particulate matter in the systems originates from primary production. C:P and N:P ratios from regression of C on P and N on P are well associated with changes in salinity. The low N:P ratio of 13.1 implies N limitation in the environments of the systems. This seems to result from the low N:P ratio of nutrients released across sediment-water interface. Phytoplankton response, expressed here as the increase of chlorophyll a, to N addition also verifies N limitation for phytoplankton communities. In heavy rainfall season (from June to September), the addition of excessive N via streams into the stratified coastal water proliferates phytoplankton greatly. During the phytoplankton blooms, C:P and N:P ratios are much higher than the Redfield ratio, implying P limitation. This results from the high N:P ratio in nutrients supplied from stream waters. Strong stratification during the blooms also interrupts the supply of nutrients, particularly p, from bottom waters. Dependent upon precipitation, this tendency shows great inter-annual variation.

• Honam Mathematical Journal
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• v.29 no.4
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• pp.535-542
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• 2007

In this paper, for each natural number n, we construct a polynomial $p_n$(x) of degree n so that $p_n(x)\;\leq\;p_{n+1}(x)\;\leq\;e^x$ for $x\;\geq\;-1$. These polynomials are optimal in the sense that if p(x) is a polynomial of degree n with $p_{n-l}(x)\;\leq\;p(x)\;\leq\;e^x$, then $p(x)\;\leq\;p_n(x)$.