• 제목/요약/키워드: $P_2O_5-V_2O_5-ZnO$

검색결과 109건 처리시간 0.032초

Electrical Properties of PCCYA-doped ZnO-based Varistors

  • Nahm, Choon-Woo
    • Transactions on Electrical and Electronic Materials
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    • 제9권3호
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    • pp.96-100
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    • 2008
  • The microstructure, voltage-current, and capacitance-voltage relations ofP CCYA doped ZnO-based varistors were investigated for different amounts of $Al_2O_3$. As the $Al_2O_3$ amount increased, the average grain size (d) increased from d=4.3 to $d=5.5{\mu}m$ and the sintered density $({\rho})$ increased from ${\rho}=5.63$ to ${\rho}=5.67g/cm^3$. As the $Al_2O_3$ amount increased, the breakdown voltage $(V_B)$ increased from $V_B=633$ to $V_B=71$ V/mm and the non-ohmic coefficient $({\alpha})$ increased from ${\alpha}=47$ to ${\alpha}=4$. $Al_2O_3$ served as a donor due to the donor density $(N_d)$, which increases in the range of $N_d=0.77-1.85{\times}10^{18}/cm^3$ with increasing amount of $Al_2O_3$.

네오디뮴이 첨가된 프라세오디뮴계 ZnO 바리스터의 I-V 특성 (I-V Characteristics of Praseodymium-Based ZnO Varistors Doped with Neodymium)

  • 박춘현;윤한수;남춘우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.312-316
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    • 1999
  • I-V characteristics of Praseodymium-based ZnO varistor doped with $Nd_2O_3$ in the range 0.0-2.0mol% sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$ were investigated. In the all sides, ZnO varistors sintered at $1300^{\circ}C$ exhibited much better varistor characteristics than that at 135$0^{\circ}C$. All ZnO varistors doped with $Nd_2O_3$ sintered at $1300^{\circ}C$ exhibited good varistor characteristics but particularly ZnO varistor doped with l.Omol% $Nd_2O_3$ exhibited the best characteristics, which the nonlinear is 65.2 and the leakage current is 4.5pA. It is estimated that ZnO varistor doped with l.Omol% $Nd_2O_3$ will begin to be sufficiently used as basic composition to fabricate a good varistor.

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Control of electrical types in the P-doped ZnO thin film by Ar/$O_2$ gas flow ratio

  • Kim, Young-Yi;Han, Won-Suk;Kong, Bo-Hyun;Cho, Hyung-Koun;Kim, Jun-Ho;Lee, Ho-Seoung
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.11-11
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    • 2008
  • ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

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n-ZnO/p-GaN 이종접합 LED의 전기.광학적 특성

  • 김준;송창호;신동휘;조영범;배남호;변창섭;김선태
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.41.1-41.1
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    • 2011
  • 본 연구에서는 MOCVD법으로 사파이어 기판위에 u-GaN를 성장한 후 Mg을 도핑시켜 p-GaN를 성장하고, RF 스퍼터를 이용하여 n-ZnO를 도포하여 n-ZnO/p-GaN 이종접합을 형성한 후 진공증착기를 이용하여 Au/Ni를 증착시켜 발광다이오드(LED)를 제작하고 전기 광학적 특성을 조사하였다. 두께가 500 nm인 u-GaN 위에 성장된 p-GaN의 운반자 농도는 $1.68{\times}10^{17}\;cm^{-3}$ 이었다. 그리고 150, 300 nm 두께의 p-GaN에 대하여 측정된 DXRD 반치폭은 각각 450 arcsec, 396 arcsec 이었고, 상온에서 2.8~3.0 eV 영역에서 Mg 억셉터와 관련된 광루미네센스가 검출되었다. RF 스퍼터링에 의해 0.7 nm/min의 속도로 증착된 n-ZnO 박막은 증착 두께에 따라 비저항이 27.7 $m{\Omega}{\cdot}cm$ 에서 6.85 $m{\Omega}{\cdot}cm$ 까지 감소하였다. 그리고 n-ZnO 박막은 (0002)면으로 우선 배향되었으며, 상온에서 에너지갭 관련된 광루미네센스가 3.25 eV 부근에서 주되게 검출되었다. n-ZnO/p-GaN 이종접합 LED의 전류전압 특성곡선은 다이오드 방정식에 만족하는 특성을 나타내었다. 다이오드 지수는 3 V 이하 영역에서 1.64, 3~5 V 영역에서 0.85이었다. 그리고 5 V 이상 영역에서 공간전하의 제한을 받았으며, 다이오드 지수는 3.36이었다. 한편, 역방향 전류전압 특성은 p-GaN 박막의 두께에 영향을 받았으며, p-GaN 박막의 두께가 150, 300 nm 일 때 각각의 누설 전류는 $1.3{\times}10^{-3}$ mA와 $8.6{\times}10^{-5}$ mA 이었다. 상온에서 측정된 EL 스펙트럼의 주된 발광피크는 430 nm이었고, 반치폭은 49.5 nm이었다.

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Photoluminescence property of Al,N-codoped p-type ZnO films by dc magnetron sputtering

  • Jin, Hu-Jie;Liu, Yan-Yan;Park, Bok-Kee;Park, Choon-Bae
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.419-420
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    • 2008
  • In this study, high quality (Al,N)-codoped p-type ZnO thin films were obtained by DC magnetron sputtering. The film on buffer layer grown in 80% $N_2$ ambient shows highest hole concentration of $2.93\times10^{17}cm^{-3}$. The films show hole concentration in the range of $1.5\times10^{15}$ to $2.93\times10^{17}cm^{-3}$, resistivity of 131.2 to 2.864 $\Omega$cm, mobility of 3.99 to 31.6 $cm^2V^{-1}s^{-1}$. The films on Si show easier p-doping in ZnO than those on buffer layer. The film on Si shows the highest quality of optical photoluminescence (PL) characteristics. The donor energy level $(E_d)$ of (Al,N)-codoped ZnO films is about 50 meV and acceptor energy level $(E_a)$ is in the range of 63 to 71 meV. It will help to improve p-type ZnO films.

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PLD 법으로 증착된 n-ZnO:In/p-Si (111) 이종접합구조의 특성연구 (A Study on the Characteristic of n-ZnO:In/p-Si (111) Heterostructure by Pulsed Laser Deposition)

  • 장보라;이주영;이종훈;김준제;김홍승;이동욱;이원재;조형균;이호성
    • 한국전기전자재료학회논문지
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    • 제22권5호
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    • pp.419-424
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    • 2009
  • ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

입도분포에 따른 하상퇴적물의 지구화학적 분산 및 부화 (Geochemical Dispersion and Enrichment of Fluvial Sediments Depending on the Particla Size Distribution)

  • 이현구
    • 자원환경지질
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    • 제32권3호
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    • pp.247-260
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    • 1999
  • Geochermical characteristics of the fluvial sediments deprnding on particle size distribution size were investigated in the respect of majir, minor and rare eath element chemisitry. Ratios of $Al_{2}O_{3}/Na_{2}O$ and $K_{2}O/Na_{2}O$ of the sediments show the homogeneous valus, and partly positive correlation with $SiO_{2}/Al_{2}O_{3}$, respecively. Characteristics of minor element ratios (V/Ni, Cr/V, Ni/Co and Zr/Hf)are within the lower and narrow range. Thesesuggested that sediment sources may be acidic to intermediate granitic rock, and may be explained by simple weathering and sedimentation. With increasing SiO2 contents, concentrations of $Al_{2}O_{3}$, $Fe_{2}O_{3}$, CaO and MgO decreased, but those of $K_{2}O$ and $Na_{2}O$ increased, Concentrations of Ba, Be, Cs, Cu, Li, Ni, Sr, V and Zr show comparatively normal negative and some positive trends. Compared with the mean composition of granite, concentrations of $Al_{2}O_{3}$, $Fe_{2}O_{3}$, MnO, CaO and MgO in the sediments of the study area were highly enriced. Among some minor and rare earth elements, concentrations of As, Cd, Cu, and V were enriched, but those of Be, Ce, Rb, Sc, Sr and Zn were depleted when compared with average composition of granite. By decreasing of particle size fractions, SiO2, Rb and Sr conterts decreased, but concentrations of $Al_{2}O_{3}$, $Fe_{2}O_{3}$, CaO, MgO, $TiO_{2}$, MgO, $P_{2}O_{5}$, Be, Cu, Hf, Pb, V and Zr increased. From the correlations between particle size fractions and element concenreations, some elements of $Fe_{2}O_{3}$, CaO, MgO, $P_{2}O_{5}$, Cu, Ni, Zn and Zr showed typical trends in the secondary contramination sediments. These trends are typically shown under 100 mesh fractions. It indicates that the fraction of minus 100 mesh is the optimum size fraction for geochemical and environmental survey.

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Fabrication and characterization of n-IZO / p-Si and p-ZnO:(In, N) / n-Si thin film hetero-junctions by dc magnetron sputtering

  • Dao, Anh Tuan;Phan, Thi Kieu Loan;Nguyen, Van Hieu;Le, Vu Tuan Hung
    • 전기전자학회논문지
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    • 제17권2호
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    • pp.182-188
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    • 2013
  • Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

X-Ray Absorption Spectroscopic Study of 120 MeV $Ag^{9+}$ Ion-Irradiated N-Doped ZnO Thin Films

  • Gautam, Sanjeev;Lim, Weon Cheol;Kang, Hee Kyung;Lee, Ki Soo;Song, Jaebong;Song, Jonghan;Asokan, K.;Chae, Keun Hwa
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.315-315
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    • 2013
  • We report the electronic structure modification in the swift heavy ion (SHI) irradiated N-doped ZnO thin films prepared by RF sputtering from ZnO target in different ratio of Ar/$N_2$ gas mixture using highly pure $N_2$ gas. The different N-ZnO thin lms were then irradiated with 120 MeV Ag ion beam with different doses ranging from $1{\times}10^{11}$ to $5{\times}10^{12}$ ions/$cm^2$ and characterized by XRD and near edge X-ray absorption ne structure (NEXAFS) at N and O K-edges. The NEXAFS measurements provide direct evidence of O 2p and Zn 3d orbital hybridization and also the bonding of N ions with Zn and O ions. The minimum value of resistivity of $790{\Omega}cm$, a Hall mobility of $22cm^2V^-1s^-1$ and the carrier concentration of $3.6{\times}10^{14}cm^{-3}$ were yielded at 75% $N_2$. X-ray diffraction (XRD) measurements revealed that N-doped ZnO films had the preferential orientation of (002) plane for all samples, while crystallinity start decreasing at 32.5% $N_2$. The average crystallite size varies from 5.7 to 8.2 nm for 75% and then decreases to 7.8 nm for 80% $Ar:N_2$ ratio.

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질소산화물 제거용 상용 $V_2O_5-WO_3/TiO_2$ SCR 폐 촉매의 재생 효과 고찰 (A Study on the Regeneration Effects of Commercial $V_2O_5-WO_3/TiO_2$ SCR Catalyst for the Reduction of NOx)

  • 박해경
    • 대한환경공학회지
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    • 제27권8호
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    • pp.859-869
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    • 2005
  • 소각장 off gas에 장기간 노출이 되어 활성이 저하된 상용 $V_2O_5-WO_3/TiO_2$ aged 촉매를 물리화학적 방법으로 재생 처리를 수행한 후, 재생 처리에 따른 촉매의 물성 변화를 확인하고 이에 따른 촉매 활성변화를 고찰하였다. 촉매의 특성분석은 XRD(x-ray diffractometer), BET, POROSIMETER, EDX(energy dispersive x-ray spectrometer), ICP(inductively coupled plasma), TGA(thermogravimetric Analyze,), SEM(scanning electron microscopy)등을 이용하여 수행하였고 NOx 전환반응실험은 소각장 off gas를 모사하여 $NH_3$에 의한 SCR 반응을 통해 수행하였다. 본 연구에서 수행된 재생처리 방법 중, 열처리 방법으로 재생처리를 수행 할 경우 fresh 촉매환성의 95% 이상을 회복하였으며, 화학적 재생 처리 방법으로는 산성용액의 경우는 pH가 5인 용액으로 재생 처리된 촉매가, 염기성 용액의 경우는 pH가 12인 용액으로 재생 처리된 촉매가 fresh 촉매활성의 90% 이상의 촉매 활성을 회복 하였다. 촉매 특성 분석 결과, 상기와 같은 방법으로 재생 처리된 촉매의 경우 비표면적은 fresh 촉매의 $85{\sim}95%$ 수준으로 회복 되었으며, aged 촉매 표면에 축적되어 있던 촉매 비활성 물질로 잘 알려진 황(S)이나 칼슘(Ca)등은 최대 99%이상 제거 되었다. Aged 촉매 표면상의 인(P), 크롬(Cr), 아연(Zn) 등과 같은 중금속의 경우는 최대 95% 이상 제거 되었으나 납(Pb)의 경우는 제거율이 $10{\sim}30%$ 수준으로 매우 미흡한 것으로 나타났다.