• Journal of the Korean Ceramic Society
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• v.30 no.1
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• pp.55-61
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• 1993

In the WSi2/CVD-Si/SiO2 polycide structure, electrode resistance and its property were studied as a function of deposition temperature and thickness of CVD-Si, diffusion condition of POCl3, and WSi2 being deposited or not. Resistivity of poly-Si is decreased with increment of thickness in the case of POCl3 diffusion of low sheet resistance, but it is increased in the case of high sheet resistance. The resistivity of amorphous-Si is generally lower than that of poly-Si. Initial sheet resistance of poly-Si/WSi2 gate electrode is affected by the thickness and resistance of poly-Si layer, but final resistance after anneal, 900$^{\circ}C$/30min/N2, is only determined by WSi2 layer. Flourine diffuses into SiO2, but tungsten does not. In spite of out-diffusion of phosphorus into WSi2 layer, the sheet resistance is not changed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.43-49
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• 1997

Tungsten poycide has studied gate oxide reliability and dielectric strength charactristics as the composition of gate electrode which applied submicron on CMOS and MOS device for optimizing gate electrode resistivity. The gate oxide reliability has been tested using the TDDB(time dependent dielectric breakdwon) and SCTDDB (stepped current TDDB) and corelation between polysilicon and WSi$_{2}$ layer. iN the case of high intrinsic reliability and good breakdown chracteristics on polysilicon, confirmed that tungsten polycide layer is a better reliabilify properities than polysilicon layer. Also, hole trap is detected on the polysilicon structure meanwhile electron trap is detected on polycide structure. In the case of electron trap, the WSi$_{2}$ layer is larger interface trap genration than polysilicon on large POCL$_{3}$ doping time and high POCL$_{3}$ doping temperature condition. WSi$_{2}$ layer's leakage current is less than 1 order and dielectric strength is a larger than 2MV/cm.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.413-413
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• 2016

태양전지 제작 시 에미터층을 형성하는 도핑 공정의 최적화는 캐리어 수집 확률 증가와 함께 결정질 실리콘 태양전지 고효율화를 위해 매우 중요하다. 본 연구에서는 결정질 실리콘 태양전지 다이오드의 다양한 도핑 공정으로 제작된 p-n 접합에 대한 전기적 특성 분석을 진행하였다. 도핑 공정의 경우 선 증착-후 확산 공정 시간과 가스량을 변화시켜 다양한 에미터층을 제작하였다. 선 증착 시간 변화를 주는 경우 선 증착 공정을 $825^{\circ}C$로 고정한 뒤 시간을 7분에서 17분까지 변화하고 후 확산 공정을 $845^{\circ}C$, 14분으로 고정하였다. 후 확산 시간 변화를 주는 경우는 선 증착 공정을 $825^{\circ}C$, 12분으로 고정한 뒤 후 확산 공정을 $845^{\circ}C$로 고정 하고 시간을 9분에서 19분까지 변화시켰다. 선 증착 공정을 $845^{\circ}C$ 12분, 후 확산 공정을 $845^{\circ}C$, 14분으로 고정 한 뒤 선 증착 시 POCl3양을 400 ~ 1400 SCCM까지 변화시켰고, 후 확산 시 산소량을 0 ~ 1000 SCCM까지 가변한 조건에서 에미터층에 대한 특성을 분석하였다. 결과적으로 선 증착 공정 $825^{\circ}C$ 12분, 후 확산 공정 $845^{\circ}C$ 14분에서 SCR(Space Charge Region)에서 3.81의 가장 낮은 이상 계수 값을 나타내었다. 이는 p-n접합의 내부결함이 줄어들어 태양전지의 캐리어 수명이 증가됨을 보였다. 선 증착 공정 중 $POCl_3$ 주입량 800 SCCM, 후 확산 공정 중 산소량 400 SCCM에서 $15.9{\mu}s$로 가장 높은 캐리어 수명을 나타내었다. Suns-VOC 측정 결과 $POCl_3$ 주입량 800 SCCM, 산소량 400 SCCM에서 619mV로 가장 높은 개방전압을 얻을 수 있었다.

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2000.04a
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• pp.110-112
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• 2000

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2000.04a
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• pp.113-115
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• 2000

• Food Engineering Progress
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• v.15 no.4
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• pp.382-387
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• 2011

Physicohemical properties of dual-modified rice starches, cross-linked (with $POCl_{3}$) and hydroxypropylated (with propylene oxide) rice starches, were studied. Rice starch was cross-linked using $POCl_{3}$ (0.005%, 0.02% (v/w)) at 45$^{\circ}C$ for 2 hr and then hydroxypropylated using propylene oxide (2%, 6%, 12% (v/w)) at 45$^{\circ}C$ for 24 hr, respectively. Swelling power, solubility, thermal properties (DSC) and pasting properties (RVA) of cross-linked and hydroxypropylated (CLHP) rice starches were determined. Swelling power of CLHP rice starch increased at relatively lower temperature than native rice starch. Solubility of CLHP rice starch was lower than that of native rice starch. Peak viscosity of CLHP rice starch was lower than that of native starch while holding strength and final viscosity were increased with modification. Breakdown value was lower and setback value was higher than native rice starch. DSC thermal transitions of CLHP rice starch shifted toward lower temperature. Amylopectin-melting enthalpy of CLHP rice starch decreased, whereas it was not affected by the amount of $POCl_{3}$.

• Journal of the Korean Chemical Society
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• v.51 no.3
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• pp.244-250
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• 2007

A series of new 6-allylthio-3-aminopyridazine derivatives was synthesized through allylthiolation, amination and expected for anti-tumor activity. The pyridazine nucleus was obtained by condensing hydrazine monohydrate with maleic anhydride. 3,6-Dichloropyridazine was synthesized from 3,6-dihydroxypyridazine by treating with POCl3. 6-Allylthio-3-chloropyridazine was prepared from the reaction of 3,6-dichloropyridazine with allylmercaptan and sodium hydroxide. The heterocycles with nitrogen nucleophile such as morpholine, piperazine, pyrazole, imidazole, pyrrolidine, piperidine, perhydroazepine, and perhydroazocine were introduced into 3-position of pyridazine ring. The substitution reaction of 6-allylthio-3-chloropyridazine with heteroamines was performed by refluxing for 24~48 h in n-buthanol with NH4Cl.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.189-194
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• 2011

Si-cell was prepared with various types owing to the etching times textured by the KOH etching solution. The pn junction for solar cell was prepared on p-type Si wafer by the furnace using the $POCl_3$ and oxygen mixed precursor, and the metalization was done using by the Al back electrode and Ag front electrode. Textured Si surface was etched by the pyramid formation. The efficiency and the fill factor was increased in the Si-cell with a large size of pyramids, because of the series resistances decrease depending on the increasing of the photon absorbance. Increasing of the absorbance occurred the induction of the short current and open voltage, and then the efficiency was increased.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.69-72
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• 2013

Combined nano- and micro-wires (CNMWs) Si arrays were prepared using PR patterning and silver-assisted electroless etching. A $POCl_3$ doping process was applied to the fabrication of CNMWs solar cells. KOH solution was used to remove bundles in CNMWs and the etching time was varied from 30 to 240 s. The lowest reflectance of 3.83% was obtained at KOH etching time of 30 s, but the highest carrier lifetime of $354{\mu}s$ was observed after the doping process at 60 s. At the same etching time, a $V_{oc}$ of 574 mV, $J_{sc}$ of $28.41mA/cm^2$, FF of 74.4%, and Eff. of 12.2% were achieved in the CNMWs solar cell. CNMWs solar cells have potential for higher efficiency by improving the post-process and surface-rear side structure.

• Bulletin of the Korean Chemical Society
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• v.30 no.2
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• pp.383-388
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• 2009

Rates of solvolyses of diphenyl thiophosphorochloridate ($(PhO)_2$PSCl, 1) in ethanol, methanol, and aqueous binary mixtures incorporating ethanol, methanol, acetone and 2,2,2-trifluoroethanol (TFE) are reported. For four representative solvents, studies were made at several temperatures and activation parameters were determined. The 30 solvents gave a reasonably precise extended Grunwald-Winstein plot, correlation coefficient (R) of 0.989. The sensitivity values (l = 1.29 and m = 0.64) of diphenyl thiophosphorochloridate ($(PhO)_2$PSCl, 1) were similar to those obtained for diphenyl phosphorochloridate ($(PhO)_2$POCl, 2), diphenylphosphinyl chloride ($Ph_2$POCl, 3) and diphenylthiophosphinyl chloride ($Ph_2$PSCl, 4). As with the previously studied of 3~4 solvolyses, an $S_N$ pathway is proposed for the solvolyses of diphenyl thiophosphorochloridate (1). The activation parameters, ${\Delta}H^{\neq}\;(=11.6{\sim}13.9\;kcal{\cdot}mol^{-1})\;and\;{\Delta}S^{\neq}\; (=\;-32.1\;{\sim}\;-42.7\;cal{\cdot}mol^{-1}{\cdot}K^{-1})$, were determined, and they were in line with values expected for an $S_N$2 reaction. The large kinetic solvent isotope effects (KSIE, 2.44 in MeOH/MeOD and 3.46 in $H_2O/D_2$O) are also well explained by the proposed $S_N$2 mechanism.