• Bulletin of the Korean Chemical Society
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• v.13 no.2
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• pp.127-131
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• 1992

Changes in network structures of ${\alpha}-Nb_2O_5$ in the X MgO+(1-X) ${\alpha}-Nb_2O_5$ solid solutions occurring as the MgO doping level (X) was varied were investigated by means of infrared spectroscopy and X-ray analysis. X-ray diffraction revealed that all the synthesized specimens have the monoclinic structure. The FT-IR spectroscopy showed that the system investigated forms the solid solutions in which $Mg^{2+}$ ions occupy the octahedral sites in parent crystal lattice. Electrical conductivities were measured as a function of temperature from 600 to $1050{\circ}$ and $P_{O2}$ form $1{\times}10^{-5}$ to $2{\times}10^{-1}$ atm. The defect structure and conduction mechanism were deduced from the results. The $1}n$ value in ${\alpha}{\propto}{P_{O2}^{1}n}}$ is found to be -1/4 with single possible defect model. From the activation energy ($E{\alpha}$ = 1.67-1.73 eV) and the1/n value, electronic conduction mechanism is suggested with a doubly charged oxygen vacancy.

• 연구논문집
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• s.22
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• pp.151-160
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• 1992

The wear resistance of electroless Ni-P-X(X A1203, Diamond) composite coating layers was studied by Taber abrasion test technique. The wear resistance of composite coating layers was particularly relied upon the codeposited content, particle size and distribution of particles, and heat treatment of coating layers, as well as the electroless nickel plating bath employed. In this study, we lay emphasis on the wear resistance of electroless composite coating layers containing A1203 particles(1.2~Im, 6.7hIm, 11.5lIm, 20l1m) or diamond particles (1.5jim, 5gm). From the result of composite coating A1203 and diamond particles, the wear resistance of composite coating layers is as follows.

• Journal of applied mathematics & informatics
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• v.12 no.1_2
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• pp.31-37
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• 2003

In this Paper, we investigate local stability, oscillation and bounde-ness character of positive solutions of the difference equation $X_{N+l}$ = $\alpha$ + ( $X_{N-1}$$^{P/)}$( $X_{N}$$^{P}$), n = 0, 1, … under specified conditions.s.tions.s.

• Journal of the Korean Physical Society
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• v.81
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• pp.867-875
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• 2022

This paper explored the effect of deposition conditions on the characteristics of copper oxide (CuO_x) thin films prepared by direct current (DC) magnetron sputtering. X-ray diffraction exhibited that CuO with n-type conductivity was the main composition regardless of the DC magnetron sputtering power whereas the phase transition from n-type CuO to p-type Cu₂O was observed with decreasing the oxygen pressure (OP) from 40 to 20%. The optical band gap ranges of 1.6-1.9 eV, which are characteristic of n-type CuO, were determined for samples prepared with OPs of 30-40% while the optical band gap of 2.3 eV, which is characteristic of p-type Cu₂O, was measured for samples prepared with an OP of 20%. In addition, only Cu⁺ X-ray photoelectron spectroscopy (XPS) peak at the ~932.6 eV position exists in the films deposited with an OP of 20%, whereas only Cu²⁺ XPS peaks at ~934.2 eV and in the range of 940-945 eV are observed in the films deposited with an OP of 40%. Furthermore, as a result of XPS depth profile analysis, it was confirmed that the composition ratio of the sample prepared at an OP of 20% was Cu₂O, whereas the composition ratio of the sample prepared at an OP of 40% was CuO. These suggest that the CuO_x thin films could be constantly converted from n-type CuO to p-type Cu₂O by decreasing the oxygen partial pressure. Thin film transistors with Cu₂O deposited at 20% OP revealed p-type characteristics such as onset voltage (V_ON) of -3 V, saturated hole mobility of 8 cm²/Vs at V_GS = -28 V, subthreshold swing of 0.86 V/decade at V_GS-V_ON = -0.5 V, and on/off ratio of 1.14 × 10³.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.353-355
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• 1988

The properites of Zn-diffusion in III-V ternary alloy semiconductor $In_{1-x}Ga_{x}p$, which was grown by the temperature gradient solution (TGS) method, have been investigated. The composition, x, dependence of the Zn-diffusion coefficient at $850^{\circ}C$ and the activation energy for Zn-diffusion into $In_{1-x}Ga_{x}p$ were found to be $D850^{\circ}C$(x)= $3.935{\times}10^{-8}exp(-6.84{\cdot}x)$, and $E_{A}(x)=1,28+2,38{\cdot}x$, respectively. From this study, we confirm that the Zn-diffusion in $In_{1-x}Ga_{x}p$ was explainable with the diffusion mechanisms of the interstitial-substitutional, which was widely accepted mechanisms in the III-V binary semiconductors.

• Journal of the Korean Ceramic Society
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• v.48 no.1
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• pp.63-68
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• 2011

The investigation is directed to lead free (Pb-free) frits that can be used for organic light emitting diode, plasma display screen devices and other sealing materials. $P_2O_5$-SnO system glasses have been prepared for Pb-free low temperature glass frit. Structure and properties of the glasses with the composition SnO-$xB_2O_3-(60-x)P_2O_5$ (x=0, 5, 10, 15, 20, 25, 30, 35, 40 mol%) were characterized by infrared spectra (IR), X-ray diffraction(XRD), Density, Molar volume, Thermo mechanical analysis(TMA) and weight loss after immersion test. Glass transition temperature($T_g$), dilatometric softening temperature($T_d$) and chemical durability increased, and coefficient of thermal expansion($\alpha$) decrease with the substitution of $B_2O_3$ for $P_2O_5$ in the range of 0~25 mol%.

• Bulletin of the Korean Mathematical Society
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• v.52 no.2
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• pp.525-530
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• 2015

Let D be an integrally closed domain with quotient field K, X be an indeterminate over D, $f=a_0+a_1X+{\cdots}+a_nX^n{\in}D[X]$ be irreducible in K[X], and $Q_f=fK[X]{\cap}D[X]$. In this paper, we show that $Q_f$ is a maximal ideal of D[X] if and only if $(\frac{a_1}{a_0},{\cdots},\frac{a_n}{a_0}){\subseteq}P$ for all nonzero prime ideals P of D; in this case, $Q_f=\frac{1}{a_0}fD[X]$. As a corollary, we have that if D is a Krull domain, then D has infinitely many height-one prime ideals if and only if each maximal ideal of D[X] has height ${\geq}2$.

• Bulletin of the Korean Mathematical Society
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• v.59 no.1
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• pp.241-263
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• 2022

We consider a nonlinear Schrödinger equation with critical frequency, (P_𝜀) : 𝜀²∆v(x) - V(x)v(x) + |v(x)|^p-1v(x) = 0, x ∈ ℝ^N, and v(x) → 0 as |x| → +∞, for the infinite case as described by Byeon and Wang. Critical means that 0 ≤ V ∈ C(ℝ^N) verifies Ƶ = {V = 0} ≠ ∅. Infinite means that Ƶ = {x₀} and that, grossly speaking, the potential V decays at an exponential rate as x → x₀. For the semiclassical limit, 𝜀 → 0, the infinite case has a characteristic limit problem, (P_inf) : ∆u(x)-P(x)u(x) + |u(x)|^p-1u(x) = 0, x ∈ Ω, with u(x) = 0 as x ∈ Ω, where Ω ⊆ ℝ^N is a smooth bounded strictly star-shaped region related to the potential V. We prove the existence of an infinite number of solutions for both the original and the limit problem via a Ljusternik-Schnirelman scheme for even functionals. Fixed a topological level k we show that v_k,𝜀, a solution of (P_𝜀), subconverges, up to a scaling, to a corresponding solution of (P_inf ), and that v_k,𝜀 exponentially decays out of Ω. Finally, uniform estimates on ∂Ω for scaled solutions of (P_𝜀) are obtained.

• Journal of the Korean Mathematical Society
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• v.47 no.4
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• pp.789-804
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• 2010

We here investigate an existence and uniqueness of the nontrivial, nonnegative solution of a nonlinear ordinary differential equation: $$[\mid(w^m)]'\mid^{p-2}(w^m)']'\;+\;{\beta}rw'\;+\;{\alpha}w\;+\;(w^q)'\;=\;0$$ satisfying a specific decay rate: $lim_{r\rightarrow\infty}\;r^{\alpha/\beta}w(r)$ = 0 with $\alpha$ := (p - 1)/[pd-(m+1)(p-1)] and $\beta$:= [q-m(p-1)]/[pd-(m+1)(p-1)]. Here m(p-1) > 1 and m(p - 1) < q < (m+1)(p-1). Such a solution arises naturally when we study a very singular solution for a doubly degenerate equation with nonlinear convection: $$u_t\;=\;[\mid(u^m)_x\mid^{p-2}(u^m)_x]_x\;+\;(u^q)x$$ defined on the half line.

• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.140-145
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• 2015

In this study, we verified the relationship among the electrical conductivity, chemical durability, and structure of conductive vanadate glass in which $BO_3$ and $BO_4$ and $V^{4+}$ and $V^{5+}$ coexist simultaneously. We prepared samples of vanadium borophosphate glass with various compositions, given by $50V_2O_5-xB_2O_3-(50-x)P_2O_5$(x = 0 ~ 20 mol%) and $70V_2O_5-xB_2O_3-(70-x)P_2O_5$(x = 0 ~ 10 mol%), and analyzed the electrical conductivity, chemical durability, FT-IR spectroscopy, thermal properties, density, and molar volume. Substituting $B_2O_3$ for $P_2O_5$ was found to improve the electrical conductivity, chemical durability, and thermal properties. From these results, we can draw the following conclusions. First, the electrons shift from the electron rich $V^{4+}$ to the electron deficient $BO_3$ as the $B_2O_3$ content increases. Second, the improvement in chemical durability and thermal properties is attributed to an increase in cross-linked structures by changing from a $BO_3$ structure to a $BO_4$ structure.