• Title/Summary/Keyword: $O_3$ Generation

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Analysis and Design of a Multi-resonant Converter with a Wide Output Voltage Range for EV Charger Applications

  • Sun, Wenjin;Jin, Xiang;Zhang, Li;Hu, Haibing;Xing, Yan
    • Journal of Power Electronics
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    • v.17 no.4
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    • pp.849-859
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    • 2017
  • This paper illustrates the analysis and design of a multi-resonant converter applied to an electric vehicle (EV) charger. Thanks to the notch resonant characteristic, the multi-resonant converter achieve soft switching and operate with a narrowed switching frequency range even with a wide output voltage range. These advantages make it suitable for battery charging applications. With two more resonant elements, the design of the chosen converter is more complex than the conventional LLC resonant converter. However, there is not a distinct design outline for the multi-resonant converters in existing articles. According to the analysis in this paper, the normalized notch frequency $f_{r2n}$ and the second series resonant frequency $f_{r3n}$ are more sensitive to the notch capacitor ratio q than the notch inductor ratio k. Then resonant capacitors should be well-designed before the other resonant elements. The peak gain of the converter depends mainly on the magnetizing inductor ratio $L_n$ and the normalized load Q. And it requires a smaller $L_n$ and Q to provide a sufficient voltage gain $M_{max}$ at ($V_{o\_max}$, $P_{o\_max}$). However, the primary current increases with $(L_nQ)^{-1}$, and results in a low efficiency. Then a detailed design procedure for the multi-resonant converter has been provided. A 3.3kW prototype with an output voltage range of 50V to 500V dc and a peak efficiency of 97.3 % is built to verify the design and effectiveness of the converter.

Photosensitized Generation of ydroxyl Radical by Color Additive (색소 첨가제에 의한 히드록시 라디칼의 광증감 생성반응)

  • 김민식;성대동
    • The Korean Journal of Food And Nutrition
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    • v.10 no.1
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    • pp.6-13
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    • 1997
  • Reactivity and reaction mechanism for the photosensitized generation of hydroxyl radical by various coumarin derivatives are investigated by means of ESR and laser flash photolysis methods. The nine kinds of coumarin derivatives show to be proceeded through the OH·radical generation mechanism, however 1-ethyl-3-nitro-1-nitrosoguanidine decomposes and produces the carbene intermediate before OH·radical generation reaction occurs. The nine coumarin derivatives show the signals, which are corresponded to DMPO-OH spin adducts. NaN3, EtOH and HCOONa act as a strong photosensitizer to quench OH·radical. The decay rate constants of the hydrated electrons in the case of added N2O show higher than added K3Fe(CN)6.

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Preparation and Reactivity of ZnO-Al$_2$O$_3$ Desulfurization Sorbents for Removal H$_2$S ($H_2S$제거를 위한 ZnO-$Al_2O_3$ 탈황제의 제조 및 반응특성 연구)

  • 박노국;이종욱;류시옥;이태진;김재창
    • Journal of Energy Engineering
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    • v.11 no.2
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    • pp.136-141
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    • 2002
  • Advanced zinc-based sorbents, ZA, for Hot Gas Desulfurization (HGD) process in Integrated Gasification Combined Cycle (IGCC) systems were formulated with $Al_2$O$_3$ as support to enhance the reactivity and their reactive characteristics was also investigated in this study. Changes in the physical and chemical properties of the sorbents based on both the mole ratios of ZnO/Al$_2$O$_3$ and the calcination temperatures were examined by a XRD. The results obtained in our desulfurization-regeneration cycle tests demonstrated that degradation of sorbents due to the heat generation could be improved through the optimization of the $Al_2$O$_3$ contents and of the calcination temperatures. From the durability study it is concluded that the prepared ZA sorbents with additives have the desirable features for HGD.

The effect of Pellet about $DeNO_x$ for Packed-bed type reactor (Packed-bed type 반응기에서 $NO_x$제거에 대한 Pellet의 영향)

  • Park, Jae-Yoon;Lee, Kyunh-Ho;Lee, Dong-Hoon;Kim, Jung-Dal;Park, Sang-Hyun;Koh, Hee-Suk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.203-206
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    • 2000
  • In this experiment, an attempt to use pellets($BaTiO_3$, $TiO_2$, ${\gamma}-Al_2O_3$, sludge) for $NO_x$ removal was conducted The effect of pellets on NO removal from simulated flue gas was experimentally investigated for packed-bed reactor of plate-plate geometry. An experimental investigation has been conducted for NO concentration of 50ppm balanced by air, and gas flow rate of $5{\ell}/min$. Ceramic pellets were used for surface discharge and the sludge pellets was added on $BaTiO_3$ and $TiO_2$ to increase $NO_x$ removal rate. In the result, $NO_x$ removal rate using $TiO_2$ was better than other pellets. $NO_2$ segnificatly generated by using $BaTiO_3$ pellets and sludge pellets used with $BaTiO_3$ decreased $NO_2$ generation.

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Optical properties of Phosphorus- and Arsenic-doped p-type ZnO Thin Films with Ampoule-tube Method (Ampoule-tube 법을 이용한 P와 As 도핑 p형 ZnO 박막의 광학적 특성)

  • So, Soon-Jin;Lee, Eun-Cheal;Yoo, In-Sung;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.97-98
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    • 2005
  • To investigate the ZnO thin films which is interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. Phosphorus (P) and arsenic (As) were diffused into about 2.1${\mu}m$ ZnO thin films sputtered by RF magnetron sputtering system mn ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and 700$^{\circ}C$ during 3hr. We find the condition of p-type ZnO whose diffusion condition is 700$^{\circ}C$, 3hr Our p-type ZnO thin film has not only very high carrier concentration of above $10^{19}/cm^3$ but also low resistivity of $5\times10^{-3}{\Omega}cm$.

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Luminescent and Electrical Characterization of ZnS:Tb Thin-Film Electroluminescent Devices Using Multilayered Insulators

  • Kim, Yong-Shin;Kang, Jung-Sook;Yun, Sun-Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.37-38
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    • 2000
  • The ZnS:Tb thin-film electroluminescent devices were grown by atomic layer deposition with utilizing single-layer aluminum oxide and/or multilayered tantalum aluminum oxide, $Ta_xAl_yO$, as upper and lower insulating layers. These devices were investigated in terms of the luminescent and electrical characteristics. From this analysis, the devices using the $Ta_xAl_yO$ instead of $Al_2O_3$ were observed to have a lower threshold voltage for emission due to the higher relative dielectric constant of $Ta_xAl_yO$ insulators than that of the $Al_2O_3$ device. And there was a large amount of dynamic space charge generation in the phosphor of the device with the $Ta_xAl_yO$ insulators seemingly due to electron multiplication such as trap ionization.

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Combination Treatment with Arsenic Trioxide and Sulindac Induces Apoptosis of NCI-H157 Human Lung Carcinoma Cells via ROS Generation with Mitochondrial Dysfunction (NCI-H157 폐암 세포주에서 활성산소종의 생성과 미토콘드리아 기능변화를 한 Arsenic Trioxide와 Sulindac 병합요법의 세포고사효과)

  • Kim, Hak-Ryul;Yang, Sei-Hoon;Jeong, Eun-Taik
    • Tuberculosis and Respiratory Diseases
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    • v.59 no.1
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    • pp.30-38
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    • 2005
  • Background : Arsenic trioxide ($As_2O_3$) has been used to treat acute promyelocytic leukemia, and it induces apoptosis in a variety of solid tumor cell lines including non-small cell lung cancer cells. However, nonsteroidal antiinflammatory drugs (NSAID) can enhance tumor response to chemotherapeutic drugs or radiation. It was previously demonstrated that a combination treatment with $As_2O_3$ and sulindac induces the apoptosis of NCI-H157 human lung carcinoma cells by activating the caspase cascade. This study aimed to determine if a combination treatment augmented its apoptotic potential through other pathways except for the activation of the caspase cascade. Material and Methods : The NCI-H157 cells were treated with $As_2O_3$, sulindac and antioxidants such as glutathione (GSH) and N-acetylcysteine (NAC). The cell viability was measured by a MTT assay, and the level of intracellular hydrogen peroxide ($H_2O_2$) generation was monitored fluorimetrically using a scopoletin-horse radish peroxidase (HRP) assay. Western blotting and mitochondrial membrane potential transition analysis were performed in order to define the mechanical basis of apoptosis. Results : The viability of the cells was decreased by a combination treatment of $As_2O_3$ and sulindac, and the cells were protected using antioxidants in a dose-dependent manner. The increased $H_2O_2$ generation by the combination treatment was inhibited by antioxidants. The combination treatment induced changes in the mitochondrial transmembrane potential as well as the expression of the Bcl-2 family proteins, and increased cytochrome c release into the cytosol. However, the antioxidants inhibited the effects of the combination treatment. Conclusion : Combination treatment with $As_2O_3$ and sulindac induces apoptosis in NCI-H157 human lung carcinoma cells via ROS generation with a mitochondrial dysfunction.

Antioxidant Activity and Inhibition of MMP-9 by Isorhamnetin and Quercetin 3-O-$\beta$-D-Glucopyranosides Isolated from Salicornia herbacea in HT1080 Cells

  • Kong, Chang-Suk;Kim, You-Ah;Kim, Moon-Moo;Park, Jin-Sook;Kim, Se-Kwon;Lee, Burm-Jong;Nam, Taek-Jeong;Seo, Young-Wan
    • Food Science and Biotechnology
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    • v.17 no.5
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    • pp.983-989
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    • 2008
  • Two flavonoids, isorhamnetin 3-O-$\beta$-D-glucopyranoside (1) and quercetin 3-O-$\beta$-D-glucopyranoside (2), from slander glasswort (Salicornia herbacea, Korean name hamcho) were isolated. Antioxidative and matrix metalloproteinase-9(MMP-9) inhibitory effects of these compounds were investigated in HT 1080 cell lines. These compounds suppressed the electron spin resonance (ESR) signal intensity on generation of 1,1-diphenyl-2-picrylhydrazyl (DPPH) radical in a free-cellular system. Their scavenging effects on generation of intercellular reactive oxygen species (ROS) also exhibited similar trends with DPPH radical in the free cellular system. Also, a control group combined only with Fe(II)-$H_{2}O_2$ resulted in DNA apoptosis by oxidative stress, whereas treatments with these compounds suppressed radical-mediated DNA damage. Intracellular glutathione (GSH) levels were slightly increased in the presence of compound 1 and 2. Moreover, these compounds led to the reduction of the expression levels of MMP-9 without cytotoxic influence. These results suggest that these compounds have a potential as a valuable natural antioxidant and MMP inhibitor related to oxidative stress. Therefore, these compounds not only can be developed as a candidate for a therapeutic potential but also a source for use as ingredients of health foods or functional foods to prevent metastasis involving MMP-9, closely related to ROS.

1.5 kV GaN Schottky Barrier Diode for Next-Generation Power Switches (차세대 전력 스위치용 1.5 kV급 GaN 쇼트키 장벽 다이오드)

  • Ha, Min-Woo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.61 no.11
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    • pp.1646-1649
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    • 2012
  • The $O_2$ annealing technique has considerably suppressed the leakage current of GaN power devices, but this forms NiO at Ni-based Schottky contact with increasing on-resistance. The purpose of the present study was to fabricate 1.5 kV GaN Schottky barrier diodes by improving $O_2$-annealing process and GaN buffer. The proposed $O_2$ annealing performed after alloying ohmic contacts in order to avoid NiO construction. The ohmic contact resistance ($R_C$) was degraded from 0.43 to $3.42{\Omega}-mm$ after $O_2$ annealing at $800^{\circ}C$. We can decrease RC by lowering temperature of $O_2$ annealing. The isolation resistance of test structure which indicated the surface and buffer leakage current was significantly increased from $2.43{\times}10^7$ to $1.32{\times}10^{13}{\Omega}$ due to $O_2$ annealing. The improvement of isolation resistance can be caused by formation of group-III oxides on the surface. The leakage current of GaN Schottky barrier diode was also suppressed from $2.38{\times}10^{-5}$ to $1.68{\times}10^{-7}$ A/mm at -100 V by $O_2$ annealing. The GaN Schottky barrier diodes achieved the high breakdown voltage of 700, 1400, and 1530 V at the anode-cathode distance of 5, 10, and $20{\mu}m$, respectively. The optimized $O_2$ annealing and $4{\mu}m$-thick C-doped GaN buffer obtained the high breakdown voltage at short drift length. The proposed $O_2$ annealing is suitable for next-generation GaN power switches due to the simple process and the low the leakage current.