• Journal of the Korean Ceramic Society
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• v.48 no.2
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• pp.160-167
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• 2011

Plasma sprayed ceramic coatings inherently contain pores and usually also cracks. Post-treatment of the plasma sprayed coatings is a way to close the connected pores and cracks. In this study, post-sealing treatment in plasma sprayed $Al_2O_3$ coatings was employed to overcome the reduction of coating properties. $Al_2O_3$ plasma thermal spray coating was made on aluminum alloys plate, $CrO_3$ post coating and heat treatment at $550^{\circ}C$ was carried out in order for final $Cr_2O_3$ to be saturated through phase transformation. Chromia sealing began at the fine defect in coated microstructure, while larger pores were permeated later. The increase in concentration and treatment frequency of sealing solution resulted in the decrease of porosity of coating layer, while cracks occurred partially after the third treatment. After twice treatment of 10M $CrO_3$ solution, microhardness and breakdown voltage of $Al_2O_3$ coatings were found to increase by ${\fallingdotseq}$ 50% and ${\fallingdotseq}$ 390% respectively than without post-treatment.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.37-41
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• 2019

Sheet resistance reduction in the Ag nanowire (NW) coated films is accomplished with slight improvement of optical properties for the application of transparent conducting electrodes by using $O_2$ plasma treatment. The sheet resistance was optimized after 30 seconds $O_2$ plasma treatment, showing the 27 % of maximum decrease of sheet resistance. It is found that the $O_2$ plasma treatment get rid of the residual organic materials at the junction of Ag NWs. However, the Ag NWs may be also snapped by the excessive $O_2$ plasma treatment can showing the collapses of Ag NWs networks. Furthermore, the optical properties such as optical transmittance and haze were monotonically improved with the $O_2$ plasma treatment time until 90 seconds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.436-437
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• 2006

In this work, impedance Spectroscopic analysis was applied to study the effect of plasma treatment on the surface of indum-tin oxide (ITO) anodes using $O_2$ gas and to model the equivalent circuit for organic light emitting diodes (OLEDs) with the $O_2$ plasma treatment of ITO surface at the anodes. This device with ITO/TPD/Alq3/LiF/Al structure can be modeled as a simple combination of a resistor and a capacitor. The $O_2$ plasma treatment on the surface of ITO shifts the vacuum level of the ITO as a result of which the barrier height for hole injection at the ITO/organic interface is reduced. The impedance spectroscopy measurement of the devices with the $O_2$ plasma treatment on the surface of ITO anodes shows change of values in parallel resistance ($R_p$) and parallel capacitance ($C_p$).

• Journal of the Korean institute of surface engineering
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• v.38 no.3
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• pp.118-125
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• 2005

Low temperature plasma treatment with different gases and rf powers were performed to improve the adhesion strength between polytetrafluoroethylene(PTFE) and electroless deposited copper. According to the research, $H_2$ plasma having hydrogen radical was more effective in surface polarity modification than $O_2$ plasma due to the defluorination reaction. However, surface roughness of PTFE was more increased with $O_2$ than $H_2$ plasma. PTFE treated with $120W-O_2$ plasma and $250w-H_2$ plasma, consecutively showed rougher surface than single step $250w-H_2$ plasma treated one and more hydrophilic than single step $120W-O_2$ plasma treated one. And it showed 5B tape test grade, which is better adhesion property than 1B or 3B obtained by single step plasma treatment. In addition, adhesion strength between PTFE and Cu deposit is also deeply affected by residual water on its interface.

• Journal of the Korean Society of Clothing and Textiles
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• v.36 no.10
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• pp.1117-1124
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• 2012

This study was a preliminary study to investigate the influence of surface morphology and characteristics on the self-cleaning of substrates. PI film was treated by $O_2$ plasma to modify the surface; in addition, AFM and Fe-SEM were employed to examine the morphological changes induced on a PI film treated by $O_2$ plasma and surface energies calculated from measured contact angles between several solutions and PI film based on the geometric mean and a Lewis acid base method. The surface roughness of PI film treated by $O_2$ plasma increased with the duration of the $O_2$ plasma on PI film due to the increased surface etching. The contact angle of film treated by $O_2$ plasma decreased with the increased treatment time in water and surfactant solution; in addition, the surface energy increased with the increased treatment times largely attributed to the increased portion on the polar surface energy of PI film. The coefficient of the correlation between surface roughness and surface polarity such as contact angle and surface energy was below 0.35; however, it was over 0.99 for the contact angle and surface energy.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.96-96
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• 2010

To improve surface wettability, each sample was treated by atmospheric pressure plasma (APP) using dielectric barrier discharge (DBD) system. Argon and oxygen gases were used for treatment gas to modify the $TiO_2$ surface by APP with RF power range from 50 to 200 W. Water contact angle was decreased from $20^{\circ}$ to $10^{\circ}$ with argon only. However, water contact angle was decreased from $20^{\circ}$ to < $1^{\circ}$ with mixture of argon and oxygen. Water contact angle with $O_2$ plasma was lower than water contact angle with Ar plasma at the same RF power. It seems to be increasing the polar force of $TiO_2$ surface. Also, analysis result of X-ray photoelectron spectra (XPS) shows the increase of intensity of O1s shoulder peak, resulting in increasing of surface wettability by APP. Moreover, each water contact angle increased according to increase past time. However, contact angle increase with plasma treatment was lower than without plasma treatment. Additionally, the efficiency of $TiO_2$ photocatalyst was improved by plasma surface-treatment through the degradation experiment of phenol

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2309-2314
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• 2012

Ag deposited N-$TiO_2$ composite nanoparticles were prepared via $NH_3$ plasma treatment. X-ray diffraction, UV-vis spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy were used to characterize the prepared $TiO_2$ samples. The plasma treatment did not change the phase composition and particle sizes of $TiO_2$ samples, but extended its absorption edges to the visible light region. The photocatalytic activities were tested in the degradation of an aqueous solution of a reactive dyestuff, methylene blue, under visible light. The photocatalytic activities of Ag deposited N-$TiO_2$ composite nanoparticles were much higher than Ag-$TiO_2$, N-$TiO_2$, and P25. A possible mechanism for the photocatalysis was proposed.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1489-1490
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• 2011

The $O_2$ plasma treatment is used as improvement of ITO roughness glass for organic light-emitting diodes and organic photovoltaic cells. This study examined the effect of the electrical properties of OLED according to variation of $O_2$ plasma power. In experiment, we found that the electrical characteristics of device are excellent when the power of $O_2$ plasma is 250 W. And when the power of $O_2$ plasma increases over 250 W, the electrical properties were getting worse. $O_2$ plasma treatment not only prevents the diffusion of indium, a metal constituent, to an organic layer but also plays a significant role as improvement of ITO roughness. By considering organic light-emitting diodes treating $O_2$ plasma, it could contribute to the improvement of the efficiency of the device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.326-329
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• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

• Textile Coloration and Finishing
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• v.16 no.3
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• pp.14-21
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• 2004

In this research, we accomplished in order to improving color fastness of sublimation for Poly (vinyl alcohol) (PVA)-iodine polarized film. The poor iodine sublimation problem has greatly improved by $O_2$ low temperature plasma treatment. We obtained the followings: (1) plasma treatment has contributed in adhesive ability via peel strength, AFM image and roughness were investigated, But the improvement in adhesive strength was not linearly proportional to the treatment time. (2) $O_2$ plasma treated PVA-iodine polarized film was good enough as to maintain the transmittance and polarization even after iodine cone. of 0.05mol/L and dipping time of 50sec. (3) $O_2$ low temperature plasma treated PVA-iodine polarized film has obtain high durability because of good adhesive strength.