• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.645-649
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• 2009

We investigated the effects of a high density $O_2$ plasma treatment on the structural and electrical properties of Ga-, B- codoped ZnO (GZOB) films. The GZOB films were deposited on polymer substrate without substrate heating by DC magnetron sputtering. Prior to the GZOB film growth, we treated a polymer substrate with highly dense inductively coupled oxygen plasma. The optical transmittance of the GZOB film, about 80 %, was maintained regardless of the plasma pre-treatment. The resistivity of the GZOB film on PC substrate decreased from 9.08 ${\times}$ $10^{-3}$ ${\Omega}-cm$ without an $O_2$ plasma pre-treatment to 2.12 ${\times}$ $10^{-3}$ ${\Omega}-cm$ with an $O_2$ plasma pre-treatment. And PES substrate decreased from 1.14 ${\times}$ $10^{-2}$ ${\Omega}-cm$ without an $O_2$ plasma pre-treatment to 6.13 ${\times}$ $10^{-3}$ ${\Omega}-cm$ with an $O_2$ plasma pre-treatment.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.36-36
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• 1998

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.37-43
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• 2020

The effects of O₂ plasma pre-treatment and post-annealing conditions on the interfacial adhesion of Ti thin film and WPR dielectric were investigated using 90° peel test for fan-out wafer level packaging (FOWLP) redistribution layer (RDL) applications. Peel strength between Ti film and WPR dielectric decreased from 8.9±1.3 g/mm to 2.7±0.9 g/mm for variation of O₂ plasma pre-treatment time from 30s to 300s, which is closely related to C-O-C or C=O bonds breakage at the WPR dielectric surface due to excessive plasma pre-treatment conditions. During post-annealing at 150℃, the peel strength abruptly decreased from 0 h to 24 h, and then maintained constant until 100 h, which is also mainly due to the damage of WPR dielectric which is weak to high temperature. Therefore, the optimum plasma pre-treatment conditions on the surface of dielectric is essential to interfacial reliability of FOWLP RDL.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.18-23
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• 2010

We demonstrated that the solution processed organic light-emitting diodes (OLEDs) have the high efficiency with pre-treated indium-tin-oxide (ITO). ITO surface was pre-treated with four methods and compared each other. The pre-treatment of ITO surface improves the chemical and physical characteristics of ITO such as the surface roughness, adhesion property, and the hole injection ability. These properties were analyzed by the contact angle, atomic force microscope (AFM) image, and the current flow character in device. As a results, the device with ITO pre-treated by $O_2$ plasma shows the current efficiency of 5.93 cd/A, which is 1.5 times the device without pre-treatment.

• The Research Journal of the Costume Culture
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• v.11 no.1
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• pp.66-74
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• 2003

This study is to improve the worst lightfastness of a natural dye. To modify the fiber surface, low temperature oxygen plasma was carried out on silk fabric. The result is followed below after the examination of surface shape, dyeability, color change, UV absorbent influence and lightfastness. 1. When electric discharge outputs are 60W, 80W and 100w, and processing times are 10minutes, 20minutes and 40minutes, the etching effect of surface increased as electric discharge outputs and processing times increased. 2. When examined UV absorbent for 5hours, 10hours, 20hours, 40hours and 80hours, the value changes of E are 1.47, 2.51, 2.91, 3.71, 4.51 and 5.31 in case of Al pre-mordanting/ prasma 80W, 20min./ UVabsorbent 5% (100:1), 2.31, 2.47, 3.84, 3.90, 3.61 and 4.42 in case of Al pre-mordanting/prasma 80W, 20min.1 UV absorbent 5% (o.w.f.). The lightfastness decreased when UV absorbent increased. 3. Dyeability of the samples pre-treated with five different methods was in the following order: plasma processing for 20minutes at 60W/Al pre-mordanting > Al pre-mordanting > plasma processing for 20minutes at 60W > Al after-mordanting. non mordanting Plasma treatment had superior effect on dyeability. 4. When UV absorbent was applied in fabric, the sample under higher electric discharge out puts showed more effective in improving lightfastness.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1203-1204
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• 2008

본 논문에서는 ICP-CVD(Inductively Coupled Plasma Chemical Vapor Deposition)를 이용해 기판을 가열하지 않고 증착한 $SiO_2$ 절연막의 플라즈마 처리 효과를 분석하였다. 플라즈마 처리를 하지 않은 $SiO_2$ 절연막의 경우 평탄화 전압이 -7.8V, 유효 전하 밀도가 $4.77{\times}10^{13}cm^2$로 열악한 특성을 보였다. 이를 개선하기 위해 헬륨 플라즈마 전처리(Pre-treatment)와 수소 플라즈마 후처리(Post-treatment)를 통해서 $SiO_2$ 절연막의 전기적인 특성을 개선하였다.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.175-180
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• 2010

Transparent conducting oxide (TCO) films are widely used for optoelectronic applications. Among TCO materials, zinc oxide (ZnO) has been studied extensively for its high optical transmission and electrical conduction. In this study, the effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films (GZO) on polyethylene naphthalate (PEN) substrate were studied. The $O_2$ plasma pretreatment process was used instead of conventional oxide buffer layers. The $O_2$ plasma treatment process has several merits compared with the oxide buffer layer treatment, especially on a mass production scale. In this process, an additional sputtering system for oxide composition is not needed and the plasma treatment process is easily adopted as an in-line process. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PEN substrate and the GZO film, the $O_2$ plasma pre-treatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the contact angle decreased and the RMS surface roughness increased significantly. It is believed that the surface energy and adhesive force of the polymer surfaces increased with the $O_2$ plasma treatment and that the crystallinity and grain size of the GZO films increased. When the RF power was 100W and the treatment time was 120 sec in the $O_2$ plasma pretreatment process, the resistivity of the GZO films on the PEN substrate was $1.05\;{\times}\;10^{-3}{\Omega}-cm$, which is an appropriate range for most optoelectronic applications.

• Journal of the Korean institute of surface engineering
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• v.54 no.4
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• pp.184-193
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• 2021

This study demonstrates formation behavior and morphological changes of PEO (Plasma Electrolytic Oxidation) films on AZ91 Mg alloy as a function of pre-treatment time in 1 M HF solution at 25 ± 1 ℃. The electrochemical behavior and morphological changes of AZ91 Mg alloy in the pre-treatment solution were also investigated with pre-treatment time. The PEO films were formed on the pre-treated AZ91 Mg alloy specimen by the application of anodic current 100 mA/cm² of 300 Hz AC in 0.1 M NaOH + 0.4 M Na₂SiO₃ solution. Vigorous generation of hydrogen bubbles were observed upon immersion in the pre-treatment solution and its generation rate decreased with immersion time. It was also found that 𝛽-Mg₁₇Al₁₂ in AZ91 Mg alloy was dissolved and a protective thin film of MgF₂ was formed on the AZ91 Mg alloy surface during the pre-treatment process in the 1 M HF solution. PEO film did not grow on the AZ91 Mg alloy specimen when the surface was not pre-treated and irregular PEO films with nodular defects were formed for the specimens pre-treated up to 1 min. Uniform PEO films were formed when the AZ91 Mg alloy specimen was pre-treated more than 3 min. The growth rate of PEO films on AZ91 Mg alloy increased significantly with increasing pre-treatment time.

• Journal of Microbiology and Biotechnology
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• v.29 no.9
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• pp.1401-1411
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• 2019

Mycobacterial cell walls comprise thick and diverse lipids and glycolipids that act as a permeability barrier to antibiotics or other chemical agents. The use of OH radicals from a non-thermal plasma jet (NTPJ) for the inactivation of mycobacteria in aqueous solution was adopted as a novel approach. Addition of water vapor in a nitrogen plasma jet generated OH radicals, which converted to hydrogen peroxide ($H_2O_2$) that inactivated non-pathogenic Mycobacterium smegmatis and pathogenic Mycobacterium tuberculosis H37Rv. A stable plasma plume was obtained from a nitrogen plasma jet with 1.91 W of power, killing Escherichia coli and mycobacteria effectively, whereas addition of catalase decreased the effects of the former. Mycobacteria were more resistant than E. coli to NTPJ treatment. Plasma treatment enhanced intracellular ROS production and upregulation of genes related to ROS stress responses (thiolrelated oxidoreductases, such as SseA and DoxX, and ferric uptake regulator furA). Morphological changes of M. smegmatis and M. tuberculosis H37Rv were observed after 5 min treatment with $N_2+H_2O$ plasma, but not of pre-incubated sample with catalase. This finding indicates that the bactericidal efficacy of NTPJ is related to the toxicity of OH and $H_2O_2$ radicals in cells. Therefore, our study suggests that NTPJ treatment may effectively control pulmonary infections caused by M. tuberculosis and nontuberculous mycobacteria (NTM) such as M. avium or M. abscessus in water.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.78-78
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• 2013

Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.