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http://dx.doi.org/10.6117/kmeps.2020.27.1.0037

Effects of O2 Plasma Pre-treatment and Post-annealing Conditions on the Interfacial Adhesion Between Ti Thin Film and WPR Dielectric  

Kim, Gahui (School of Materials Science and Engineering, Andong National University)
Lee, Jina (SIMMTECH Co.)
Park, Se-hoon (ICT device Packaging Research Center, Korea Electronics Technology Institute)
Park, Young-Bae (School of Materials Science and Engineering, Andong National University)
Publication Information
Journal of the Microelectronics and Packaging Society / v.27, no.1, 2020 , pp. 37-43 More about this Journal
Abstract
The effects of O2 plasma pre-treatment and post-annealing conditions on the interfacial adhesion of Ti thin film and WPR dielectric were investigated using 90° peel test for fan-out wafer level packaging (FOWLP) redistribution layer (RDL) applications. Peel strength between Ti film and WPR dielectric decreased from 8.9±1.3 g/mm to 2.7±0.9 g/mm for variation of O2 plasma pre-treatment time from 30s to 300s, which is closely related to C-O-C or C=O bonds breakage at the WPR dielectric surface due to excessive plasma pre-treatment conditions. During post-annealing at 150℃, the peel strength abruptly decreased from 0 h to 24 h, and then maintained constant until 100 h, which is also mainly due to the damage of WPR dielectric which is weak to high temperature. Therefore, the optimum plasma pre-treatment conditions on the surface of dielectric is essential to interfacial reliability of FOWLP RDL.
Keywords
Fan-out wafer level packaging; Redistribution layer; Interfacial adhesion; Peel test; $O_2$ plasma pre-treatment; post-annealing;
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
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1 D. Yu, Z. Huang, Z. Xiao, L. Yang, and M. Xiang, "Embedded Si Fan Out: A Low Cost Wafer Level Packaging Technology Without Molding and De-bonding Processes", Proc. 67th Electronic Components and Technology Conference (ECTC), Orlando, IEEE (2017).
2 K. Nishido, H. Onozeki, N. Suzuki, and T. Nonaka, "Study of the die potion accuracy in the fabrication process of a die first type FO-PLP", Proc. 20th Electronics Packaging Technology Conference (EPTC), Singapore, IEEE (2018).
3 T. Braun, S. Raatz, U. Maass, M. van Dijk, H. Walter, O. Holck, K. F. Becker, M. Topper, R. Aschenbrenner, M. Wohrmann, S. Voges, M. Huhn, K. D. Lang, M. Wietstruck, R. F. Scholz, A. Mai, and M. Kaynak, "Development of a Multi- Project Fan-Out Wafer Level Packaging Platform", Proc. 67th Electronic Components and Technology Conference (ECTC), Orlando, IEEE (2017).
4 E. J. Vardaman, "FO-WLP Market and Technology Trends", Proc. 2017 International Conference on Electronics Packaging (ICEP), Tendo, 318, IEEE (2017).
5 S. E. Kim, "Heterogeneous Device Packaging Technology for the Internet of Things Applications", J. Microelectron. Packag. Soc., 23(3), 1 (2016).   DOI
6 S. W. Ho, H. Hsiang-Yao, S. S. B. Lim, W. L. Ching, C. S. Choong, S. L. P. Siang, and C. T. Chong, "Development of FO-WLP Package-on-Package using RDL-first Integration Flow", Pro. 20th Eletronics Packaging Technology Conference (EPTC), Singapore, IEEE (2018).
7 T. Enomoto, S. Abe, D. Matsaku, and T. Nakamura, "Recent Progress in Low Temperature Curable Photosensitive Dielectrics", Proc. International Conference on Electronics Packaging (ICEP), Japan, IEEE (2017).
8 T. Fujiwara, Y. Shoji, Y. Masuda, K. Hashimoto, Y. Koyama, K. Isobe, H. Araki, R. Okuda, and M. Tomikawa, "Higher Reliability for Low-temperature Curable Positive-Tone Photodefinable Dielectric Materials", Proc. 19th Electronics Packaging Technology Conference (EPTC), Singapore, IEEE (2017).
9 V. S. Rao, C. T. Chong, D. Ho, and D. M. Zhi, "Process and Reliability of Large Fan-Out Wafer Level Package based Package-on-Package", Proc. 67th Electronic Components and Technology Conference (ECTC), Orlando, IEEE (2017).
10 Z. Chen, F. Che, M. Z. Ding, D. S. W. Ho, T. C. Chai, and V. Srinivasa, "Drop Impact Reliability Test and Failure Analysis for Large Size High Density FOWLP Package on Package", Proc. 67th Electronic Components and Technology Conference (ECTC), Orlando, IEEE (2017).
11 C. H. Yang, S. C. Lee, J. M. Wu, and T. C. Lin, "The properties of copper films deposited on polyimide by nitrogen and oxygen plasma pre-treatment", Applied Surface Science, 252(5), 1818 (2005).   DOI
12 S. H. Kim, S. H. Cho, N. -E. Lee, H. M. Kim, Y. W. Nam, and Y. H. Kim, "Adhesion properties of Cu/Cr films on polyimide substrate treated by dielectric barrier discharge plasma", Surface & Coatings Technology, 193(1-3), 101 (2005).   DOI
13 Y. Oh, E. J. Kim, Y. Kim, K. Choi, W. B. Han, H. S. Kim, and C. S. Yoon, "Adhesion of sputter-deposited Cu/Ti film on plasma-treated polymer substrate", Thin Solid Films, 600(1), 90 (2016).   DOI
14 T. Y. Kang, C. Park, W. Seo, G. Kim, and S. J. Hong, "Reactive Ion Etching of WPR for Via Formation in High Density 3-D Stacking Technology", J. Kor. Phys. Soc, 55(5), 1877 (2009).   DOI
15 T. Schwarz, H. Stahr, and A. Cardoso, "Merging of packaging technologies for highly integrated embedded modules", Proc. 6th Electronic Systerm-Integration Technology Conference (ESTC), France, IEEE (2016).
16 B. I. Noh, C. S. Seok, W. C. Moon, and S. B. Jung, "Effect of plasma treatment on adhesion characteristics at interfaces between underfill and substrate", Int. J. Adhes. Adhes., 27(3), 200 (2007).   DOI
17 Y. X. Liu, E. T. Kang, K. G. Neoh, J. F. Zhang, C. Q. Cui, and T. B. Lim, "Surface graft copolymerization enhanced adhesion of an epoxy-based printed circuit board substrate (FR-4) to copper", IEEE Trans. Adv. Packag., 22(2), 214 (1999).   DOI
18 M. H. Kim and K. W. Lee, "The effects of ion beam treatment on the interfacial adhesion of Cu/polyimide system", Met. Mater. Int., 12(5), 425 (2006).   DOI
19 K. J. Min and Y. B. Park, "Effect of Desmear Treatment on the Interfacial Bonding Mechanism of Electroless-Plated Cu film on FR-4 Substrate", Korean J. Mater. Res., 19(11), 625 (2009).   DOI
20 K. J. Min, S. C. Park, K. W. Lee, J. D. Kim, D. G. Kim, G. H. Lee, and Y. B. Park, "Effect of Ion-beam Pre-treatment on the Interfacial Adhesion of Sputter-deposited Cu film on FR-4 Substrate", Korean J. Met. Mater., 47(1), 26 (2009).
21 V. Zaporojtchenko, J. Zekonyte, S. Wille, U. Schuermann, and F. Faupel, "Tailoring of the PS surface with low energy ions: Relevance to growth and adhesion of noble metals", 236(1-4), 95 (2005).   DOI
22 S. C. Park, K. J. Min, K. H. Lee, Y. S. Jeong, and Y. B. Park, "Effect of Annealing on the Interfacial Adhesion Energy between Electroless-Plated Ni and Polyimide", Met. Mater. Int., 17(1), 111 (2011).   DOI
23 T. Miyamura and J. Koike, "The effects of Cr oxidation and polyimide degradation on interface adhesion strength in Cu/Cr/polyimide flexible films", Materials Science and Engineering: A, 445-446, 620 (2007).   DOI
24 G. Peng, W. Hao, D. Yang, and S. He, "Degradation of Polyimide Film under Vacuum Ultraviolet Irradiation", J. Appl. Polym. Sci., 94(4), 1370 (2004).   DOI
25 B. H. Bae, H. Lee, K. Son, and Y. B. Park, "Effect of Post-Annealing Condition on the Peel Strength of Screen-printed Ag Film and Polyimide Substrate", J. Microelectron. Packag. Soc., 24(2), 69 (2017).   DOI
26 K. Son, G. Kim, D. Kim, and Y. B. Park, "Effect of Surface Treatments on the Interfacial Adhesion of Cu RDL for FOWLP", Proc. 18th International Symposium on Microelectronics and Packaging (ISMP), Busan (2019).