• 한국재료학회지
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• 제12권5호
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• pp.382-386
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• 2002

We studied growth and characterization of $SrBi_2Ta_2O_9$ (SBT) thin films fabricated by low temperature process under vacuum and/or oxygen ambient. A metal organic decomposition (MOD) method based on a spin-on technique and annealing process using a rapid thermal annealing (RTA) method was used to prepare the SBT films. The crystallinity of a ferroelectric phase of SBT thin films is related to the oxygen partial pressure during RTA process. Under an oxygen partial pressure higher than 30 Torr, the crystallization temperature inducing the ferroelectric SBT phase can be lowered to $650^{\circ}C$. Those films annealed at $650^{\circ}C$ in vacuum and oxygen ambient showed good ferroelectric properties, that is, the memory window of 0.5~0.9 V at applied voltage of 3~7 V and the leakage current density of 1.80{\times}10^{-8}$ A/$\textrm{cm}^2$ at an applied voltage of 5V. In comparison with the SBT thin films prepared at 80$0^{\circ}C$ in $O_2$ ambient by furnace annealing process, the SBT thin films prepared at $650^{\circ}C$ in vacuum and oxygen ambient using the RTA process showed a good crystallization and electrical properties which would be able to apply to the virtul device fabrication precess.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.28.1-28.1
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• 2009

The superior properties of ZnO such as high exciton binding energy, high thermal and chemical stability, low growth temperature and possibility of wet etching process in ZnO have great interest for applications ranging from optoelectronics to chemical sensor. Particularly, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. Currently, low-dimensional ZnO is synthesized by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), thermal evaporation, and sol.gel growth. Recently, our group has been reported about achievement the growth of Ga-doped ZnO nanorods using ZnO seed layer on p-type Si substrate by RF magnetron sputtering system at high rf power and high growth temperature. However, the crystallinity of nanorods deteriorates due to lattice mismatch between nanorods and Si substrate. Also, in the growth of oxide using sputtering, the oxygen flow ratio relative to argon gas flow is an important growth parameter and significantly affects the structural properties. In this study, Phosphorus (P) doped ZnO nanorods were grown on c-sapphire substrates without seed layer by radio frequency magnetron sputtering with various argon/oxygen gas ratios. The layer change films into nanorods with decreasing oxygen partial pressure. The diameter and length of vertically well-aligned on the c-sapphire substrate are in the range of 51-103 nm and about 725 nm, respectively. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission.

• Bulletin of the Korean Chemical Society
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• 제22권9호
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• pp.1015-1018
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• 2001

Vanadium oxide thin films with thickness of about 2000 $\AA$ have been prepared by radio frequency sputter deposition using a V2O5 target in a mixed argon and oxygen atmosphere with different Ar/O2 ratio ranging from 99/1 to 90/10. X-ray diffraction and X-ray absorption near edge structure spectroscopic studies show that the oxygen content higher than 5% crystallizes a stoichiometric V2O5 phase, while oxygen deficient phase is formed in the lower oxygen content. The oxygen content in the mixed Ar + O2 has a significant influence on electrochemical lithium insertion/deinsertion property. The discharge-charge capacity of vanadium oxide film increases with increasing the reactive oxygen content. The V2O5 film deposited at the Ar/O2 ratio of 90/10 exhibits high discharge capacity of 100 ${\mu}Ah/cm2-{\mu}m$ along with good cycle performance.

• The Korean Journal of Ceramics
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• 제4권2호
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• pp.103-113
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• 1998

By using a gas-tight electrochemical cell, we can perform high-temperature coulometric titration and measure electronic transport properties to determine the elecronic defect structure of metal oxides. This technique reduces the time and expense required for conventional thermogravimetric measurements. The components of the gas-tight coulometric titration cell are an oxygen sensor, Pt/yttria stabilitized zirconia(YSZ)/Pt, and an encapsulated metal oxide sample. Based on cell design, both transport and thermodynamic measurements can be performed over a wide range of oxygen partial pressure ($pO_2=10^{-35}$ to 1 atm). This paper describes the high-temperature gas-tight electrochemical cells used to determine electronic defect structures and transport properties for pure and doped-oxide systems, such as YSZ, doped and pure ceria $(Ca-CeO_2 \;and\; CeO_2)$, copper oxides and copper-oxide-based ceramic superconductors, transition metal oxides, $SrFeCo_{0.5}O_x,\; and \;BaTiO_2$.

• Transactions on Electrical and Electronic Materials
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• 제4권4호
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• pp.10-12
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• 2003

NBCO thin films have been fabricated by magnetron sputtering technique on heated $SrTiO_3$ substrates. The oxidation and crystallization of the films were strongly dependent on the distance between the targets and the substrate, as well as on the oxygen partial pressure. The critical temperatures were above 80K for the films prepared under the condition of a small target to substrate gap, in spite of a very low oxygen pressure of 0.2Pa. The results suggest the importance of the activated oxygen uptake into the films during sputtering.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.497-497
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• 2013

Semiconducting amorphous InGaZnO (a-IGZO) has attracted significant research attention as improved deposition techniques have made it possible to make high-quality a-IGZO thin films. IGZO thin films have several advantages over thin film transistors (TFTs) based on other semiconducting channel layers.The electron mobility in IGZO devices is relatively high, exceeding amorphous Si (a-Si) by a factor of 10 and most organic devices by a factor of $10^2$. Moreover, in contrast to other amorphous semiconductors, highly conducting degenerate states can be obtained with IGZO through doping, yet such a state cannot be produced with a-Si. IGZO thin films are capable of mobilities greaterthan 10 $cm^2$/Vs (higher than a-Si:H), and are transparent at visible wavelengths. For oxide semiconductors, carrier concentrations can be controlled through oxygen vacancy concentration. Hence, adjusting the oxygen partial pressure during deposition and post-deposition processing provides an effective method of controlling oxygen concentration. In this study, we deposited IGZO thinfilms at optimized conditions and then analyzed the film's electrical properties, surface morphology, and crystal structure. Then, we explored how to generate IGZO thin films using DC magnetron sputtering. We also describe the construction and characteristics of a bottom-gate-type TFT, including the output and transfer curves and bias stress instability mechanism.

• 한국진공학회지
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• 제8권4B호
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• pp.507-513
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• 1999

8mol%-yttria-stabilized zirconia(YSZ) thin films as oxygen ion conductor were deposited by rf-magnetron sputtering, and the oxygen gas sensors with the structure of $SiO_2$ substrate/Ni-NiO mixed reference layer/Pt/YSZ/Pt were fabricated and their oxygen sensing properties were investigated. The steady-state electro-motive force (EMF) values were measured as a function of oxygen partial pressure ($PO_2;form 1.013\times10^3 \textrm{Pa \;to}\; 1.013\times10^5$Pa) and operating temperature ($300^{\circ}C$ to $700^{\circ}C$). The fabricated YSZ oxygen sensor showed the best oxygen sensing properties at 50$0^{\circ}C$. However, oxygen sensing properties were very low at the temperature lower than 30$0^{\circ}C$ due to the lack of oxygen ion mobility and at the temperature higher than $700^{\circ}C$ due 새 intermixing of materials between the layers. Especially, the YSZ sensor operating at $500^{\circ}C$ and oxygen partial pressure above $1.565\times10^4$Pa showed the oxygen sensing properties close to the values predicted by ideal Nernst equation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2001-2003
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• 2005

Various organic acid were used in order to prepare new metalorganic deposition solution for high quality $REBa_2Cu_3O_{7-{\delta}}$ (RE=Y, Eu, Gd) films. Prepared fluorine free MO precursor solution was coated on single crystal (001) $LaAlO_3$ (LAO) by dip coating method. Processing parameters such as oxygen partial pressure, water vapor, ramping rate and pyrolysis temperature etc havebeen controlled in order to make high $J_c$ films with a good epitaxial relationship with substrate. 0.5 micron-thick film was obtained by single coating and no crack appeared after calcination. Oxygen partial pressure was varied in the range of $100{\sim}1,000 ppm$ and conversion heat treatment was carried out at the temperature of $725{\sim}765^{\circ}C$. A critical transition temperature $(T_{c0})$ of 90K and a critical transport current density $(J_c)$ of $>0.5MA/cm^2$ (77K and self-field) were demonstrated for the YBCO film on (001) oriented LAO substrates with a thickness of 0.5 micron. $I_c$ was determined by utilizing a transport measurement. SEM and XRD investigations confirmed that films were grown epitaxially onto the LAO single crystal substrate. It is thought that fluorine free new MOD solutionis promising for high quality REBCO films.

• 한국세라믹학회지
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• 제16권4호
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• pp.213-224
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• 1979

The present work was undertaken: (1) to determine if CaO-partially stabilized $ZrO_2$ prepared by Hot Petroleum Drying Method would show better ionic conductor as an oxygen sensor in molten metals than that prepared by Oxide Wet Mixing Method and than CaO-fully stabilized $ZrO_2$, and (2) to understand the nature of conduction mechanism of CaO-partially stabilized $ZrO_2$ by a comparison of measured electrical conductivity data with theory on defect structure of pure monoclinic $ZrO_2$ and fully stabilized cubic $ZrO_2$. The DC electrical conductivity was measured by 3-probe technique and the AC electrical conductivity by 2-probe technique as a function of temperature in the range 973-1373 K and oxygen partial pressure in the range 10-1-10-25Mpa. The results of the experiments were as follows: 1. CaO-partially stabilized $ZrO_2$ prepared by Hot petroleum Drying Method showed at T=1094-1285 K and $Po_2$=10-7-10-25 MPa a nearly ionic conduction with 4 times higher conductivity than that prepared by Oxide Wet Mixing Method. 2. High-oxygen pressure conductivity tends toward a Po_2^{+1/5}-Po_2^{+1/6}$dependence. An analysis of possible defect structures suggests that CaO-partially stabilized $ZrO_2$ has an anti-Frenkel defect in which singly or doubly ionized oxygen interstitials and defect electrons predominate at T=1094-1285 K and $Po_2$=10-1-10-7MPa. 3. The activation energy for pure electron hole-conduction and ionic conduction of CaO-partially stabilized $ZrO_2$ was found to be 130 KJ/mol at T=973-1373 K, $Po_2$=2, 127 10-2 MPa(air) and 153KJ/mol at T=1094-1285 K respectively.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.133-136
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• 2003

The CeO$_2$ thin films were deposited on the biaxially textured Ni substrates by MOCVD process. The (200) oriented CeO$_2$ films were formed at the deposition temperature(Td) of 500~52$0^{\circ}C$, the oxygen partial pressure(PO2) of 0.90~3.33 torr and the deposition time(t) of 3~25 min. The surface roughness and gain size rapidly increased at Td $\geq$ 52$0^{\circ}C$ due to the grain growth. The surface roughness also increased as the deposition time increased. The optimized deposition conditions of the CeO$_2$ films for the YBCO coated conductor were Td= 500~51$0^{\circ}C$, PO2= 2.30 torr and t= 10~12 min.