• Journal of Electrochemical Science and Technology
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• v.12 no.2
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• pp.230-236
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• 2021

Ionic conduction mechanism of Mg-Al layered double hydroxides (LDHs) intercalated with CO₃^2- (Mg-Al CO₃^2- LDH) was studied. The electromotive force for the water vapor concentration cell using Mg-Al CO₃^2- LDH as electrolyte showed water vapor partial pressure dependence and obeyed the Nernst equation, indicating that the hydroxide ion transport number of Mg-Al CO₃^2- LDH is almost unity. The ionic conductivity of Mg(OH)₂, MgCO₃ and Al₂(CO₃)₃ was also examined. Only Al₂(CO₃)₃ showed high hydroxide ion conductivity of the order of 10^-4 S cm^-1 under 80% relative humidity, suggesting that Al₂(CO₃)₃ is an ion conducting material and related to the generation of carrier by interaction with water. To discuss the ionic conduction mechanism, Mg-Al CO₃^2- LDH having deuterium water as interlayer water (Mg-Al CO₃^2- LDH(D₂O)) was prepared. After the adsorbed water molecules on the surface of Mg-Al CO₃^2- LDH(D₂O) were removed by drying, DC polarization test for dried Mg-Al CO₃^2- LDH(D₂O) was examined. The absorbance attributed to O-D-stretching band for Mg-Al CO₃^2- LDH(D₂O) powder at around the positively charged electrode is larger than that before polarization, indicating that the interlayer in Mg-Al CO₃^2- LDH is a hydroxide ion conduction channel.

• Food Science and Preservation
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• v.19 no.1
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• pp.19-25
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• 2012

An experiment was conducted to find out the effect of brushing treatment during cultivation on the postharvest quality of the baby leaf vegetable, specifically tah tasai Chinese cabbage (Brassica campestris var. narinosa). The effect of mechanical brushing during cultivation on the postharvest quality was determined in terms of the quality changes in weight loss, gas partial pressure, leaf color, and appearance during storage using a 30-${\mu}m$-thick polypropylene film at $16^{\circ}C$. The brushing treatment included brushing with A4 paper back and forth 50 times a day. The study revealed that the growths on the brushing-treated plant group were less than those on the control group. The structure of the leaf tissue of the brushing-treated plant also tended to be less compact than that of the non-treated plant. The brushing treatment resulted in less growth and denser plant tissues as well as in differences in the gas $O_2$ consumption and $CO_2$ accumulation after packaging. For the gas partial pressure, the $O_2$ consumption and $CO_2$ accumulation of the brushing-treated plant tended to be less than those of the non-treated plant. There were no differences, however, between the brushing-treated plant and control groups in the SPAD value and appearance. The study results also suggested that after packaging, the effects of the brushing treatment during cultivation on the quality of the tah tasai Chinese cabbage baby leaf vegetable was not significant. As such, it is recommended that effective post-harvest methods of improving the product quality of the baby leaf vegetable be further investigated.

• Journal of The Korean Society of Clinical Toxicology
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• v.20 no.2
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• pp.75-81
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• 2022

Purpose: This study sought to compare the characteristics of patients with pathogen-positive and negative cultures, and to investigate factors predicting pathogen-positive culture results in patients of acute poisoning with suspected aspiration. Methods: Consecutive patients with acute poisoning admitted to an intensive care unit between January 2016 and December 2018 were retrospectively studied. Respiratory specimens were collected from the enrolled patients at the time of the suspected aspiration. We compared the characteristics of patients with pathogen-positive and negative culture results and analyzed the causative pathogens. Results: Among the 526 patients, 325 showed no clinical features that could be attributed to aspiration, and 201 patients had clinical features suggestive of aspiration. Of these, 113 patients had pathogen-positive culture, 61 were negative, and the specimens of 27 patients contained poor-quality sputum. In univariate analysis, patients with a positive culture showed a longer time to culture from ingestion (p=0.01), faster heart rate (p=0.01), and higher partial pressure of arterial oxygen to the fraction of inspired oxygen (PaO₂/FiO₂) (p=0.02) than patients with negative culture. Multivariate analysis demonstrated that PaO₂/FiO₂ (adjusted odd ratio, 1.005; 95% confidence interval [CI], 1.002-1.008; p=0.005) was a significant risk factor for pathogen-positive culture. The area under the receiver operating characteristic curve of PaO₂/FiO₂ was 0.591 (95% CI, 0.510-0.669, p=0.05). Gram-negative pathogens (GNPs) were predominant and at least one GNP was observed in 84 (73.3%) patients among those with pathogen positive culture. Conclusion: We failed to find any clinical factors associated with positive culture results. Antibiotics that cover GNPs could be considered when deciding the initial antibiotic regimen at the time of suspected aspiration.

• Applied Chemistry for Engineering
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• v.8 no.4
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• pp.589-594
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• 1997

Superconducting $YBa_2Cu_3O_y$ thin films were prepared at the deposition temperature of $650^{\circ}C$ under oxygen partial pressure of 0.0126 Torr on Si(111) and SrTiO3(100) substrates by chemical vapor deposition technique using $\beta$-diketonates of Y, Ba and Cu as source materials. The thin film fabricated on $SrTiO_3(100)$ had a $T_{c,onset}$ of 91K and $T_{c.0}$ of 87K. The thin film prepared on Si(111) had a $T_{c,onset}$ of 91K but didn't have a $T_{c.0}$ at liquid nitrogen boiling point(77.3K). Dense and two-dimensionally well alligned microstructure was developed for the film deposited on $SrTiO_3(100)$ substrate whereas a relatively porous and randomly distributed microstructure was developed for the film prepared on Si(111) substrate.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.116-121
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• 1999

0.5 wt%Nb-doped SrTiO3(Nb: STO) thin film was prepared on MgO(100) single crystal substrates by Pulsed Laser Deposition (PLD). The Crystallinity and the orientation of Nb:STO thin films were characterized by XRD with changing the thin film processing condition-oxygen partial pressure, substrate temperature, deposition time and the distance between target and substrate. The orientation of Nb:STO thin film showed (100), (110) and (111) orientations at the substrate temperature of $700^{\circ}C$. The lattice parameter of Nb:STO decreased with increasing Po2 and showed 0.3905 nm at Po2=100 Pa, which was similar to that of the bulk. The thickness of Nb:STO thin film increased with increasing the deposition time and with decreasing the distance between target and substrate.

• Journal of Electrical Engineering and information Science
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• v.2 no.3
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• pp.71-76
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• 1997

A lot of experiments and analyses have been done to determine the aging mechanism of mica-epoxy composite material used for large generator stator windings in order to estimate remaining life of the generator for last decades. After degrading artificially the mica-epoxy composite material, the surface analysis is performed to analyze breakdown mechanism of insulation in air and hydrogen atmosphere; i) In the case of air atmosphere, it is observed that an aging propagation from conductor to core by partial discharge effect and the formation of cracks between layers is widely carbonized surface. ii) In case of hydrogen atmosphere, the partial discharge effect is reduced by the hydrogen pressure (4kg/$\textrm{cm}^2$). Potassium ions forming a sheet of mica is replaced by hydrogen ions, which can lead to microcracks. It is confirmed that the sizes of crack by SEM analysis are 10∼20[$\mu\textrm{m}$] in length under air, and 1∼5[$\mu\textrm{m}$] in diameter, 10∼50[$\mu\textrm{m}$] in length under hydrogen atmosphere respectively. The breakdown mechanism of sttor winding insulation materials which are composed of mica-epoxy is analyzed by the component of materials with EDS, SEM techniques. We concluded that the postassium ions of mica components are replaced by H\ulcorner, H$_3$O\ulcorner at boundary area of mica-epoxy and/or mica-mica. It is proposed that through these phenomena, the conductive layers of potassium enable creation of voids and cracks due to thermal, mechanical, electrical and environmental stresses.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.388-391
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• 1999

Well oriented Bi2212 superconductor thick films were formed successfully on a copper substrate by liquid reaction between a Cu-free precursor and Cu tape method in which Cu-free BSCO powder mixture was' printed on copper plate and heat-treated. And we examined the effect of heat-treatment atmosphere for the superconducting properties and microstructure of Bi2212. The composition of Cu-free BSCO powder mixture was Bi$_2O_3$ : SrCO$_3$ : CaCO$_3$ = 1.2~2 : 1 : 1 and the heat-treatment for the superconducting formation reaction was performed in air, oxygen, nitrogen and low oxygen pressure. At heat-treatment temperature, the printing layer partially melt by reacting with CuO of the oxidizing copper plate, and the nonsuperconducting phases present in the melt are typically Bi-free phases and Cu-free phases. Among the nonsuperconducting phases, it is known that the (Sr,Ca)CuO$_3$ phase restrain the formation of the Bi2212 superconducting phase. Because a kind of the nonsuperconducting phases is controled by the oxygen partial pressure, the optimum condition in which the remnants of the second phases don't leave in the fully processed conductor was determined by XRD and the critical tempera to re (Tc) analysis.

• Journal of the Korean Ceramic Society
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• v.33 no.11
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• pp.1260-1266
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• 1996

The effects of SiO2 MnO2 and sintering atmospheres (O2, N2) on the piezoelectric properties and densification behaviors of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 were investigated. The addition of SiO2 to the system enhanced the rate of densification but supressed the rate of grain growth. On the other hand the addition of MnO2 to the system did not nearly affect the rate of densification but increased slightly the rate of grain growth The densification of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 containing of SiO2 or MnO2 was promoted with increasing the partial pressure of O2. The relative dielectric constant ($\varepsilon$r) and piezoelectric constant (d33) of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 containing of SiO2 or MnO2 sintered under O2 atmosphere were higher than under N2 atmosphere. Whereas the mechanical quality factor (Qm) of specimens sintered under O2 atmosphere were lower than under N2 atmosphere. Thus the sintering atmosphere of O2 and N2 in Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 containing of SiO2 or MnO2 acted as donor and acceptor respectively. As the amount of SiO2 increased the relative dielectric constant ($\varepsilon$r) and piezoelectric constant (d33) of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 but the mechanical quality factor (Qm) did not nearly change, In the case of the addition of MnO2 to the system the relative dielectric constant ($\varepsilon$r) and piezoelectric constant (d33) of Pb0.98Cd0.02Zr0.36Ti0.39Ni0.083Nb0.167O3 sintered under O2 atmosphere decreased rapidly with increasing the amount of MnO2 but they were unchanged with increasing the amount of MnO2 under N2 sintering atmosphere. Therefore the differences of the relative dielect-ric constant ($\varepsilon$r) and piezoelectric constant (d33) due to sintering atmosphere were diminished as the amount of MnO2 increased.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.931-937
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• 1998

The electrical conductivity of undoped mtile was measured in the oxygen partial pressure range of $1~10{-23}$atm and temperature range of $700~1300^{\circ}C$ to investigate the defect types and the electrical properties. The data(logu/logPoz) were divided into the five regions. Therefore the five dominant defect types such as $Ti_nO_{2n-1}$, Ti, Vo, Vo due to impurity, and n-p transition or p-type conduction with the Poz and the temperature were proposed. The formation enthalpies calculated from these experimental results were found to be 10.2eV for Ti, and 4. 92eV for Vo in intrinsic range.

• Progress in Superconductivity and Cryogenics
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• v.23 no.2
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• pp.1-5
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• 2021

We have investigated the electrical transport properties of polycrystalline tantalum nitride (TaN_x) films. Various compositions of tantalum (nitride) thin films have been deposited on SiO₂ substrates by reactive DC magnetron sputtering while changing the ratio of nitrogen partial pressure. The substrate temperature was maintained at 283 K during deposition. X-ray diffraction analyses indicated the presence of α-Ta and β-Ta phases in the Ta film deposited in pure argon atmosphere, while fcc-TaN_x phases appeared in the sputtering gas mixture of argon and nitrogen. The N/Ta atomic ratio in the film increased ranging from 0.36 to 1.07 for nitrogen partial pressure from 7 to 20.7%. The superconducting transition temperatures of the TaN_x thin films were measured to be greater than 3.86 K with a maximum of 5.34 K. The electrical resistivity of TaN_x thin film was in the range of 177-577 𝜇Ωcm and increased with an increase in nitrogen content. The upper critical filed at zero temperature for a TaN_0.87 thin film was estimated to exceed 11.3 T, while it showed the lowest T_c = 3.86 K among the measured superconducting TaN_x thin films. We try to explain the behavior of the increase of the residual resistivity and the upper critical field for TaN_x thin films with the nitrogen content by using the combined role of the intergrain Coulomb effect and disorder effect by grain boundaries.