• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.123-124
• /
• 2011

플라즈마 화학적 기상 증착(plasma enhanced chemical vapor deposition)공정 중 NH3 gas flow rate, RF power, SiH4 gas flow rate을 고정시키고 N2O gas flow rate을 0 sccm부터 250 sccm까지 변화시키는 조건 하에 SiON박막을 증착한 후 그 투과율, 굴절률을 측정하고 분석하였다. N2O gas flow rate조건별 시편들은 증착율을 계산하여 350 nm 두께로 동일하게 SiON을 증착하였고, borofloat위에 SiON을 증착한 샘플은 투과율을, 실리콘기판 위에 SiON을 증착한 샘플로는 굴절률을 측정하였다. 투과율의 경우는 UV/Vis spectrometer를 이용해 633 nm, 1550 nm 두 가지 파장 대 모두에서 N2O gas flow rate이 가장 큰 250 sccm일 때 가장 높은 것을 알 수 있었고 N2O gas flow rate이 낮아질수록 투과율 또한 작아지는 경향을 보였다. 굴절률은 ellipsometer를 이용해 측정하였으며 633 nm 파장에서 N2O gas flow rate가 가장 낮은 0 sccm일 때 굴절률이 가장 큰 값을 가지고 N2O gas flow rate이 커질수록 굴절률은 지수함수적으로 감소되었다(n=1.837~1.494). 이는 N2O gas flow rate이 낮을수록 SiN계열에 커질수록 SiO2계열에 가까워지는 현상으로 이해된다. 이러한 실험분석 결과는 향후 실리카 도파로의 설계 및 최적화를 위해 사용될 수 있다.

• Journal of Powder Materials
• /
• v.10 no.2
• /
• pp.123-128
• /
• 2003

$TiO_2$ nanopowder was synthesized by chemical vapor condensation (CVC) process and its photocatalytic property depending on microstructure was considered in terns of decomposition rate of organic compound. In order to control microstructure of $TiO_2$ nanopowder such as particle size and degree of agglomeration, precursor flow rate representing number concentration was changed as a process variable. In TEM observation, spherical $TiO_2$ nanoparticles with average size of 20 nm showed gradual increases in particle size and degree of agglomeration with increase of precursor flow rate. Also decomposition rate of organic compound increased with decreasing precursor flow rate. Thus, it was concluded that photocatalytic property was enhanced by targe surface area of disperse $TiO_2$ nanoparticles synthesized at lower precursor flow rate condition in CVC process.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.24 no.8
• /
• pp.1085-1096
• /
• 2000

An experimental study was performed to examine the heat and mass transfer characteristics of $LiBr-H_2O$ solution flowing over a single horizontal tube with the water vapor absorption. Effects of the flow rate and the temperature of the solution at the top of the tube, the absorber pressure and the drainage pattern were considered. The absorption rate depends highly on the absorber pressure at the low flow rate condition while on the solution inlet temperature at the high flow rate condition. Also, when the flow rate is low, the absorption performance with the sheet flow drainage appeared to be higher than that with the dripping/jet drainage. However, at the high flow rate condition, the case became reversed. The liquid film became wavy with the higher absorption rate. The waves were more probable to form with the lower flow rate and temperature of the solution, and with the higher absorber pressure.

• Journal of the Semiconductor & Display Technology
• /
• v.12 no.4
• /
• pp.49-54
• /
• 2013

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 85% in the visible range. The current density and the luminance of OLED devices with IZO thin films deposited at room temperature in 0.1sccm $O_2$ ambient gas are the highest amongst all other films. The optical band gap energy of IZO thin films plays a major role in OLED device performance, especially the current density and luminance.

• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.67-68
• /
• 2006

We prepared the AZO thin film with different $O_2$ gas flow rate. the AZO thin films were deposited on glass substrate at room temperature, working gas pressure of 1mTorr. the electrical, structural and optical properties of AZO thin films were investigated by using Hall Effect measurement system, X-ray Diffractometer (XRD) and UV-VIS spectrometer. From the results, we could obtain that AZO thin film with low resistivity of $8.5{\times}10^{-4}{\Omega}cm$ was exhibited in specific $O_2$ gas flow rate. Also, the transmittance of over 80% in visible range was observed in specific $O_2$ gas flow rate. In all of the AZO thin film with the transmittance of over 80%, diffraction peak of (002) direction was observed, while amorphous peak was observed in the AZO thin film with the low transmittance.

• Journal of the Semiconductor & Display Technology
• /
• v.11 no.4
• /
• pp.25-30
• /
• 2012

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the organic light emitting diodes (OLED) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 83% in the visible range.

• Journal of Environmental Science International
• /
• v.13 no.3
• /
• pp.289-295
• /
• 2004

The objective of this study is to delineate removal efficiency of the MTBE in solution by $TiO_2$ photocatalytic degradation as a function of the following different experimental conditions: Initial concentration of MTBE, air flow rate in solution, $H_2O_2$ dosage and pH of the solution. Photodegradation rate was increased with decreasing initial concentration of MTBE. The removal efficiency was 82% after 180 min in the case of MTBE concentration of 100 mg/L but 100% after 180 min in the case of 20 mg/L. Removal efficiency was increased with increasing pH, $H_2O_2$ dosage and air flow rate in solution.

• KSBB Journal
• /
• v.13 no.5
• /
• pp.477-482
• /
• 1998

A biosensor with PZT piezoelectric ceramic crystal was developed for the detection of formaldehyde gas. Poled PZT piezoelectric ceramic disk was made from ZrO2, TiO2 and Nb2O5, together with the addition of PbO and polyvinyl alcohol, through various processes of mixing, calcination drying, crushing, forming, sintering, polishing, ion coating and poling. Oscillator circuit of sensor was made of operational amplifier(AD811AN). Formaldehyde dehydrogenase was immobilized onto a piezoelectic ceramic crystal, together with the cofactors, reduced glutathione and nicotinamide adenine dinucleotide. The effect of flow rate on the sensitivity was determined by varing the flow rate of carrier gas from 24.7mL/min to 111.7mL/min through detector cell. The results indicated that as the flow rate was increased, the recovery rate was increased. And a significant increase in the sensitivity was observed in enhanced flow rate of carrier gas. Frequency difference(ΔF) of immobilized PZT piezoelectic disk increased proportionally to the concentration gas and reproduced to repeated exposures of formaldehyde gas(28ppm, Δ68Hz).

• Journal of the Korean Vacuum Society
• /
• v.19 no.3
• /
• pp.206-210
• /
• 2010

Al-doped ZnO thin films were deposited with various Ar flow rate by RF magnetron sputtering, and theire properties were studied. A high-quality thin film was obtained by controlling the Ar flow rate, and the influence of the Ar flow rate on the Al-doped ZnO thin film was confirmed. In all Al-doped ZnO thin films, light transmittance had above 80%. Through Hall measurement and X-ray photoelectron spectrometer, the sample of 60 sccm, which had the lowest resistivity, showed the lower Al concentration. This result was attributed to oxygen vacancy rather than Al concentration.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.1
• /
• pp.34-38
• /
• 1999

$PbTiO_3$(PT)thin films were prepared by simultaneous of $TiO_2$ and PbO on Si(100) substrate using metaloganic chemical vapor deposition (MOCVD). Titanium tetra-isopropoxide (TTIP) and $Pb(TMHD)_2$were used as source materials. As evaporation temperature and flow rate of TTIP were examined the crystal structure of PT thin films using XRD with setting deposition temperature, flow rate of Pb, and total flow rate of $520^{\circ}C$, 30 sccm, and 750 sccm, respectively. PT thin films could be deposited under 48~$50^{\circ}C$ and 18~22sccm of evaporation temperature and flow rate of TTIP, respectively. It was found that lead, oxygen, and silicon diffused at the iaterface between the film and the substrate.