Browse > Article

Structural and Electrical Characteristics of IZO Thin Films deposited at Different Substrate Temperature and Oxygen Flow Rate  

Han, Seong-Ho (Dept. of Materials Engineering, Korea University of Technology and Education)
Lee, Kyu Mann (Dept. of Materials Engineering, Korea University of Technology and Education)
Publication Information
Journal of the Semiconductor & Display Technology / v.11, no.4, 2012 , pp. 25-30 More about this Journal
Abstract
In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the organic light emitting diodes (OLED) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 83% in the visible range.
Keywords
IZO thin film; RF-magnetron sputtering; substrate temperature; oxygen flow rate;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Y. S. Jung, J. Y. Seo, D. K. Lee and D. Y. Jeon, "Influence of DC magnetron sputtering parameters on the properties of amorphous indium zinc oxide thin film", Thin Solid Films, 445, pp. 63-71, 2003.   DOI   ScienceOn
2 K. H. Noh, M. K. Choi, S. H. Park, and H. R, Joo, "Amorphous Transparent Conducting film $In_{2}O_{3}$:Zn", Hankook Kwanghan Hoeji, 13, pp.455-459, 2002.   DOI   ScienceOn
3 D. C. Paine, B. Yaglioglu, Z. Beiley, and S. Lee, "Amorphous IZO-based transparent thin film transistors", Thin Solid Films, 516, pp.5894-5898, 2008.   DOI   ScienceOn
4 L. Raniero, I. Ferreira, A. Pimentel, A. Goncalves, P. Canhola, E. Fortunato, and R. Martins, "Role of hydrogen plasma on electrical and optical properties of ZGO, ITO and IZO transparent and conductive coatings", Thin Solid Films, 511-512, pp. 295-298, 2006.
5 R. Das, K. Adhikary, and S. Ray, "The role of oxygen and hydrogen partial pressures on structural and optical properties of ITO films deposited by reactive rf-magnetron sputtering", Appl. Surf. Sci., 253, pp. 6068-6073, 2007.   DOI   ScienceOn
6 Y. Yan, S. J. Pennycook, J. Dai, R. P. H. Chang, A. Wang, and T. J. Marks, "Polytypoid structures in annealed $In_{2}O_{3}$-ZnO films", Appl. Phys. Lett., 73, pp. 2585-2587, 1998.   DOI   ScienceOn
7 Jung-Kyung Lee, Hwa-Min Kim, Seoung-Hwan Park, Jong-Jae Kim, Byung-Roh Rhee, and Sang-Ho Sohn, "Heat treatment effects on electrical and optical properties of ternary compound $In_{2}O_{3}$-ZnO films", J. Appl. Phys., 92, pp. 5761-5765, 2002.   DOI   ScienceOn
8 H. M. Kim and J. J. kim, "Heat treatment effects on the electrical properties of In2O3-ZnO films prepared by rf-magnetron sputtering method", J. of the Korean Vacuum Society, 14, pp. 238-244, 2006.
9 Y. S. Song, J. K. Park, T. W. Kim, and C. W. Chung, "Influence of process parameters on the haracteristics of indium zinc oxide thin films deposited by DC magnetron sputtering", Thin Solid Films, 467, pp. 117-120, 2004.   DOI   ScienceOn
10 K. Ishibashi, K. Hirata, and N. Hosokawa, "Mass spectrometric ion analysis in the sputtering of oxide targets", Journal of Vacuum Science & Technology A., 10, pp.1718-1722, 1992.   DOI
11 K. Tominaga, T. Ueda, T. Ao, M. Kataoka, and I. Mori, "ITO films prepared by facing target sputtering system", Thin Solid Films, 281-282, pp. 194-197, 1996.   DOI
12 Y. Hoshi, H. Kato, and K. Funatsu, "Structure and electrical propeties of ITO thin films deposited at high rate by facing target sputtering", Thin Solid Films, 445, pp. 245-250, 2003.   DOI   ScienceOn
13 N. Taga, M. Maekawa, Y. Shigesato, I. Yasui, M. Kamei and T. E. Haynes, "Deposition of Heteroepitaxial $In_{2}O_{3}$ Thin Films by Molecular Beam Epitaxy", Jpn. J. Appl.Phys., 37, pp.6524-6529, 1998.   DOI
14 C. Nunes de Carvalho, A. M. Botelho do Rego, A. Amaral, P. Brogueira and G. Lavareda, "Effect of substrate temperature on the surface structure, composition and morphology of indium-tin oxide films", Surface and Coatings Technology, 124, pp. 70 - 75, 2000.   DOI   ScienceOn