• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.140-145
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• 2002

We measured the absorption rate of a Nd:YVO$_4$crystal with a thickness of 1 mm and the output power characteristics of a cw Nd:YVO$_4$/KTP laser with respect to the change of wavelength and the polarizations of a tunable Ti:sapphire pump laser with a linewidth of 0.2 nm. In the case of S-polarization (E┴$\pi$) and P-polarization (E∥$\pi$) of a pump laser, the maximum absorption rate of the crystal was 82% at 809.4 nm and 98% at 808.8 nm, and slope efficiencies for the output power of the Nd:YVO$_4$laser (1064 nm) were 43% and 52%, respectively. The maximum Nd:YYO$_4$laser output power of 516 mW was obtained from the P-polarization pump laser of 1000 mW. As a result of an intracavity frequency-doubling, slope efficiency for the output power of the Nd:YVO$_4$/KTP green laker (532nm) was 23% and the maximum output power of 205 mW with the beam quality (M$^2$) of 1.42 was obtained from the P-polarization pump laser of 1000 mW.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.42-43
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• 2001

Nd：YVO$_4$ 결정은 들뜬 상태의 발광 평균 수명이 90-100 $\mu\textrm{s}$로 아주 짧아서 Nd：YAG나 Nd：YLF 레이저 매질에 비해 짧은 펄스폭과 빠른 반복율을 가진 펄스들을 만들어 내는 Q-switching에 적합한 레이저 매질이다. 또한 Nd：YAG 결정에 비해 아주 큰 흡수 계수 및 이득 단면적을 지니고 있어 반도체 레이저로 펌핑하는 고체 레이저에 아주 적합한 레이저 이득 매질이다. (중략)

• Korean Journal of Optics and Photonics
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• v.20 no.5
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• pp.276-280
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• 2009

A Cr:YAG crystal was used as a saturable absorber for passive Q-switching of a Nd:$YVO_4$ laser which was pumped by a 1-W continuous wave laser diode. The first surface of the Cr:YAG was high-reflection coated for the pump wavelength. The high-reflection coating improved the absorption efficiency of the pump beam in the Nd:$YVO_4$ through double pass absorption. It also prevented pump beam induced partial bleaching of the Cr:YAG. The peak-to-peak pulse fluctuation of passively Q-switched laser output was approximately 4 %. The minimum pulse-width was measured to be 7.11 ns. Also, the average pulse repetition rate was 9 kHz and the maximum output power was 16.27 mW.

• Proceedings of the Optical Society of Korea Conference
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• 2001.08a
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• pp.110-111
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• 2001

• The Journal of Korean Academy of Prosthodontics
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• v.51 no.3
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• pp.167-174
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• 2013

Purpose: This study was conducted to evaluate the roughness and surface alternations of three differently blasted titanium discs treated by $Nd:YVO_4$ Laser irradiation in different conditions. Materials and methods: Thirty commercially pure titanium discs were prepared and divided into three groups. Each group was consisted of 10 samples and blasted by $ZrO_2$ (zirconium dioxide), $Al_2O_3$ (aluminum oxide), and RBM (resorbable blasted media). All the samples were degreased by ultrasonic cleaner afterward. Nine different conditions were established by changing scanning speed (100, 300, 500 mm/s) and repetition rate (5, 15, 35 kHz) of $Nd:YVO_4$ Laser (Laser Pro D-20, Laserval $Korea^{(R)}$, Seoul, South Korea). After laser irradiation, a scanning electron microscope, X-ray diffraction analysis, energy dispersive X-ray spectroscopic analysis, and surface roughness analysis were used to assess the roughness and surface alternations of the samples. Results: According to a scanning electron microscope (SEM), titanium discs treated with laser irradiation showed characteristic patterns in contrast to the control which showed irregular patterns. According to the X-ray diffraction analysis, only $Al_2O_3$ group showed its own peak. The oxidation tendency and surface roughness of titanium were similar to the control in the energy dispersive X-ray spectroscopic analysis. The surface roughness was inversely proportional to the scanning speed, whereas proportional to the repetition rate of $Nd:YVO_4$. Conclusion: The surface microstructures and roughness of the test discs were modified by the radiation of $Nd:YVO_4$ laser. Therefore, laser irradiation could be considered one of the methods to modify implant surfaces for the enhancement of osseointegration.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.11a
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• pp.493-494
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• 2007

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.11
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• pp.1765-1771
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• 2010

In the case of micro.electro-mechanical system (MEMS) devices, the quality of punched via hole is one of the most important factors governing the performance of the device. The common features that affect the laser micromachining of via holes drilled by using Nd:$YVO_4$ laser are described, and efficient optimization methods to measure them are presented. The analysis methods involving an orthogonal array, analysis of variance (ANOVA), and response surface optimization are employed to determine the main effects and to determine the optimal laser process parameters. The significant laser process parameters were identified and their effects on the quality of via holes were studied. Finally, an experiment in which the optimal levels of the laser process parameters were used was carried out to demonstrate the effectiveness of the optimization method.

• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.220-221
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• 2003

Intracavity second harmonic generation of diode pumped solid state lasers in the visible and ultraviolet regions provide efficient, compact and robust light sources for various applications, such as optical data storage, material processing, spectroscopy and bioanalysis. Advantages of neodymium vanadate (Nd：$YVO_4$) as a gain medium for intracavity-doubled lasers over Nd：YAG lie in the facts that the gain spectrum consists of a single line with short absorption depth, and that the stimulated emission cross sections are larger. (omitted)

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.6
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• pp.260-264
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• 2002

We developed LD Pumped Nd:$VVO_4$ microchip laser with the cavity length of 1mm. The microchip laser output was 87.5㎽ at the wavelength of 1063.9nm with the input power of 241㎽ at the wavelength of 809nm. The slope efficiency was 40.7% and the threshold input power was 31.1㎽. We have also defined input power limit for the single longitudinal mode operation theoretically. It was 2.5 times larger than that of threshold input intensity. According to the results of simulation, the Nd:YVO$_4$ microchip laser can be operated with the maximum output of 15㎽ for the single longitudinal mode up to the input power of 77.75㎽.

• Proceedings of the Optical Society of Korea Conference
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• 2005.02a
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• pp.142-143
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• 2005