• 센서학회지
• /
• 제19권2호
• /
• pp.155-159
• /
• 2010

0.96$(Na_{0.5}K_{0.5})NbO_3$-0.04$(Ba_{(1-x)}Sr_x)TiO_3$ lead free piezoelectric ceramics were synthesized to enhance the piezoelectric properties of (Na,K)$NbO_3$. The systhesis and sintering method were the conventional solid state reaction method and general sintering method in air atmosphere. The polymorphic phase transition(PPT) was observed at all composition(0 $\leq$ x $\leq$ 0.05) when $(Ba_{(1-x)}Sr_x)TiO_3$ were added in the $(Na_{0.5}K_{0.5})NbO_3$. As Sr concentration was increased, grain size, dielectric loss(tan$\delta$) and mechanical quality factor($Q_m$) were decreased and piezoelectric constant($d_{33}$) and electromechanical coupling factor($k_p$) were increased within a limited value. The optimized piezoelectric and properties, $d_{33}$, $k_p$, $Q_m$, and tand, of 0.96$(Na_{0.5}K_{0.5})NbO_3$-0.04$(Ba_{(1-x)}Sr_x)TiO_3$ were 139 pC/N, 0.31 %, 95, 0.04 at the composition of x=0.04.

• Transactions on Electrical and Electronic Materials
• /
• 제8권2호
• /
• pp.84-88
• /
• 2007

[ $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ ] (BZN), $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN), and $Bi_2Cu_{2/3}Nb_{4/3}O_7$ (BCN) pyrochlore thin films were prepared on $Cu/Ti/SiO_2/Si$ substrates by pulsed laser deposition and the micro-structural and electrical properties were characterized for embedded capacitor applications. The BZN, BMN, and BCN films deposited at $25\;^{\circ}C$ and $150\;^{\circ}C$, respectively show smooth surface morphologies and dielectric constants of about $39\;{\sim}\;58$. The high dielectric loss of the films deposited at $150\;^{\circ}C$ compared with films deposited at $25\;^{\circ}C$ was attributed to the defects existing at interface between the films and copper electrode by an oxidation of copper bottom electrode. The leakage current densities and breakdown voltages in 200 nm thick-BMN and BZN films deposited at $150\;^{\circ}C$ are approximately $2.5\;{\times}\;10^{-8}\;A/cm^2$ at 3 V and above 10 V, respectively. Both BZN and BMN films are considered to be suitable materials for embedded capacitor applications.

• 한국세라믹학회지
• /
• 제40권3호
• /
• pp.279-285
• /
• 2003

Sol-gel 법으로 200 nm 정도의 두께를 가진 강유전성 S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$ N $b_{0.2}$ 박막을 Pt/Ti $O_2$/ $SiO_2$/Si 기판 위에 증착하였다. 본 실험에서는 Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$ 그리고, Nb(O $C_2$ $H_{5}$)$_{5}$를 출발 물질로 사용하였으며 2-methoxyethanol을 용매로 사용하였다. UV 노광과 급속열처리가 SBTN 박막의 구조와 전기적 특성에 어떤 영향을 주는 가를 연구하였다. UV 노광과 급속열처리를 한 후에 $650^{\circ}C$ 열처리한 SBTN 박막의 3V와 5V 인가 전압하에서의 잔류분극 값은 각각 8.49와 11.94 $\mu$C/$ extrm{cm}^2$이었다.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권9호
• /
• pp.900-905
• /
• 1996

We have investigated dielectric properties of low fired ceramics BiNbO$_{4}$ containing 0.05[wt%] V$_{2}$O$_{5}$ and x[wt%l Cr$_{2}$O$_{3}$ (x=0, 0.2, 0.4, 0.8, 1.2). By substituting Cr for Bi, dielectric constant .epsilon.$_{r}$ and quality factor Q.f increased and temperature coefficient of resonant frecquency .tau.$_{f}$ changed to positive value. In the composition of BiNbO$_{4}$+0.05 [Wt%] V$_{2}$O$_{5}$+0.8[wt%]Cr$_{2}$O$_{3}$ sintered at 960[.deg. C], we could obtain microwave dielectric properties of .epsilon.$_{r}$=49, Q.f.simeq.3000[GHz](at 4.8[GHz]), .tau.$_{f}$.simeq.0[ppm/.deg. C]. As the above ceramics can be sintered near 960[.deg. C], it is applicable to multilayer microwave device with Ag conductor.tor.tor.tor.

• 한국분말야금학회:학술대회논문집
• /
• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
• /
• pp.1232-1233
• /
• 2006

To co-fire with commercial LTCC (Low Temperature Co-fired Ceramic) materials at $850^{\circ}C{\sim}880^{\circ}C$, different contents of $B_2O_3$ were added to the $Bi_2O_3-ZnO-Nb_2O_5$ (BZN) ceramics. According to the test results, the cubic phase of BZN was transformed into orthorhombic in all the test materials. $BiNbO_4$ phase was formed in test materials with $2{\sim}5wt%$ of $B_2O_3$ addition. The phase transformation of cubic BZN was controlled during the synthesis process with excess ZnO content. The Cubic and orthorhombic phases of BZN could coexist and be sintered densely at $850^{\circ}C/2hr$.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
• /
• pp.237-239
• /
• 1993

$MnO_2$ added $(Pb_{0.45}Ca_{0.55})(Fe_{0.5}Nb_{0.5})O_3$ was calcined at $850^{\circ}C$ for two hours and sintered at $1100^{\circ}C$ for two hours. The microstructure was examined using XRD and SEM. The dielectric constant, the quality factor, and the temperature stability was measured using Hakki and Coleman method. Dielectric constant was improved to 94 from 0.5wt% $MnO_2$ added sample with $Q{\cdot}f=4260GHz$ and acceptable ${\tau}_f$ (< $20ppm/^{\circ}C$).

• 한국세라믹학회지
• /
• 제40권4호
• /
• pp.333-339
• /
• 2003

Ba (Co$_{1}$ 3/Nb$_{2}$ 3/)O$_3$(BCN) has a 1:2 ordered hexagonal structure. Q-value of BCN increased with increasing sintering temperature however, it significantly decreased when the sintering temperature exceeded 140$0^{\circ}C$ Ba (Co$_{1}$ 3/Nb$_{2}$ 3/)O$_3$(BZN) has the 1:2 ordered hexagonal structure and the degree of the 1 : 2 ordering decreased with the increase of the sintering temperature. The Q value of the BZN increased with increasing the sintering temperature and BZN sintered at 140$0^{\circ}C$ for 6h has a maximum Q-value. For (1-x) Ba (Co$_{1}$ 3/Nb$_{2}$ 3/)O$_3$-zBa(Zn$_{1}$ 3/Nb$_{2}$ 3/)O$_3$[(1-x)BCN-xBZN] ceramics the 1:2 ordered hexagonal structure was observed in the specimens with x$\leq$0.3 and the BaNb$_{6}$ O$^{16}$ second phase was found in the specimens with x$\geq$0.6. Grain Growth, which is rotated to the BaNb$_{6}$ O$^{16}$ second phase occurred in the specimens with x$\geq$ 0.5. In this work, the excellent microwave dielectric properties of $\tau$r=0.0 ppm/$^{\circ}C$$\varepsilon$r=34.5 and Q,$\times$f=97000GHz sere obtained for the 0.7BCV-0.3BZN ceramics sintered at 1400$0^{\circ}C$ for 20h.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.300-301
• /
• 2007

$Mg_4(Nb_{2-x}V_x)O_9$ (MNV) ceramics have been prepared by a hydrothermal method. Low-temperature sintering of $Mg_4(Nb_{2-x}V_x)O_9$ (MNV) by V substitution for Nb was discussed in this study. A $Q{\cdot}f_0$ value of 103,297 GHz with a ${\varepsilon}_r$ of 12.56 and a ${\tau}_f$ of $-10.53\;ppm/^{\circ}C$ was obtained when x=0.0625 after sintering at $1100^{\circ}C$ for 5 h.

• 대한전자공학회논문지
• /
• 제27권11호
• /
• pp.77-82
• /
• 1990

본 논문에서는 고주파 대역에서의 $xBa(Zn_{1/3}Nb_{2/3})O_{3}\[BZN]-(1-x)\Sr(Zn_{1/3}Nb{2/3)O_{3}\[SZN]$고 용체의 온도 및 mol 비에 따른 유전 특성에 관하여 연구하였다. BZN은 10GHz에서 유전 상수 및 무부하 Q값이 $40.5{\pm}0.5,5980{\pm}100$이며, SZN은 10.2GHz에서 각각 $36.9{\pm}0.5,2700{\pm}100$을 보였다. 또한 공진 주파수의 온도 계수는 각각 $+27.5ppm/{\circ}C$와 $-39.1ppm/{\circ}C$을 나타냈다. x-BZN-(1-x)SZN 고용체에서 온도변화에 가장 안정한 특성을 보인 고용체는 0.3BZN-0.7SZN 고용체이다. 이 고용체의 유전 상수, 무부하 Q값 및 공진 주파수의 온도 계수는 9.8 GHz에서 각각 $41.5{\pm}0.2,2920{\pm}100$ 및 $-3.5ppm/{\circ}C$를 보였다.

• 한국세라믹학회지
• /
• 제41권7호
• /
• pp.508-512
• /
• 2004

치과 임프란트의 상부구조물로 응용하기 위해 Zr $O_2$, $Y_2$ $O_3$, Nb$_2$ $O_{5}$를 각각 90.24, 5.31, 4.45mo1%씩 혼합한 정방정 지르코니아 고용체에 알루미나를 부피비로 10-90%를 10vo1%간격으로 첨가하여 (Y, Nb)-TZP/알루미나 복합체를 제조하였다. 최적의 기계적 물성은 알루미나를 10vo1% 첨가했을 때 이축 곡강도는 900MPa이었으며 파괴인성은 8.9MPam$^{1}$2/이었고 20$0^{\circ}C$ 오토크레이브하에서 10시간 열처리했을 때 저온열화가 관찰되지 않았다. 복합체를 임프란트 상부구조물로 제작하여 40명의 환자에게 총 65개를 시술한 후 2년 동안 관찰한 결과 부작용이나 나사의 풀림 또는 파절이 전혀 일어나지 않아 우수한 임상결과를 보였다.