• Korean Journal of Mineralogy and Petrology
• /
• v.33 no.2
• /
• pp.115-127
• /
• 2020

The Unsang gold deposit has been one of the three largest deposits (Daeyudong and Kwangyang) in Korea. The deposit consists of Au-bearing quartz veins filling fractures along fault zones in Precambrian metasedimentary rock and Jurassic Porphyritic granite, which suggests that it might be an orogenic-type. Based on its mineral assemblages and quartz textures, quartz veins are classified into 1)galena-quartz, 2)pyrrhotite-quartz, 3)pyrite-quartz, 4)pegmatic quartz, 5)muscovite-quartz, and 6)simple quartz vein types. The pyrite-quartz vein type we studied shows the following alteration features: sericitization, chloritization, and silicification. The quartz vein contains minerals including white quartz, white mica, chlorite, pyrite, rutile, calcite, monazite, zircon, and apatite. Rutile with euhedral or medium aggregate occur at mafic part from laminated quartz vein. Two types of rutile are distinguishable in BSE image, light rutile is texturally later than dark rutile. Chemical composition of rutile has 89.69~98.71 wt.% (TiO₂), 0.25~7.04 wt.% (WO₃), 0.30~2.56 wt.% (FeO), 0.00~1.71 wt.% (Nb₂O₅), 0.17~0.35 wt.% (HfO₂), 0.00~0.30 wt.% (V₂O₃), 0.00~0.35 wt.% (Cr₂O₃) and 0.04~0.25 wt.% (Al₂O₃), and light rutile are higher WO₃, Nb₂O₅ and FeO compared to the dark rutile. It indicates that dark rutile and light rutile were formed at different stage. The substitution mechanisms of dark rutile and light rutile are suggested as followed : dark rutile [(V³⁺, Cr³⁺) + (Nb⁵⁺, Sb⁵⁺) ↔ 2Ti⁴⁺, 4Cr³⁺ (or 2W⁶⁺) ↔ 3Ti⁴⁺ (W⁶⁺ ↔ 2Cr³⁺), V⁴⁺ ↔ Ti⁴⁺], light rutile [2Fe³⁺ + W⁶⁺ ↔ 3Ti⁴⁺, 3Fe²⁺ + W⁶⁺ ↔ Ti⁴⁺ + (V³⁺, Al³⁺, Cr³⁺) +Nb⁵⁺], respectively. While the dark rutile was formed by cations including V³⁺, V⁴⁺, Cr³⁺, Nb⁵⁺, Sb⁵⁺ and W⁶⁺ by regional metamorphism of hostrock, the postdating light rutile was formed by redistribution of cations from predating dark rutile and addition of Fe²⁺ and W⁶⁺ from Au-bearing hydrothermal fluid during ductile shear.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.59 no.11
• /
• pp.2021-2025
• /
• 2010

Electrical and structural properties were investigated on the effects of ZnO and the lead-free NKN-LST ceramics with the addition of ZnO were fabricated by a conventional mixed oxide method. A gradual change in the crystal and microstructure was observed with the increase of ZnO addition. For the NKN-LST-ZnO ceramics sintered at $1050^{\circ}C$, bulk density increased with the addition of ZnO and showed maximum value at addition 2.0mol% of ZnO. Curie temperature of the NKN-LST-ZnO ceramics slightly decreased with adding ZnO. The dielectric constant, piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) increased at the small amount of ZnO addition, which might be due to the increase in density. The high piezoelectric properties = 153 pC/N, electromechanical coupling factor = 0.484 and dielectric constant = 2883 were obtained for the NKN-LST+0.5ZnO ceramics sintered at $1050^{\circ}C$ for 2h.

• The Korean Journal of Ceramics
• /
• v.6 no.3
• /
• pp.276-279
• /
• 2000

Ferroelectric properties of $SrBi_2TaNbO_9$ (SBTN) thin films were changed by the amount of Bi content in SBTN. We suggested that the addition of excess Bi into the films could be accomplished by heat-treating $SBTN/Bi_2O_3/SBTN$ heterostructure fabricated by r.f. magnetron sputtering method. Excess Bi composition was controlled by the thickness of the sandwiched $Bi_2O_3$ from 0 to $400\;\AA$. When the SBTN thin films were inserted by $400\;{\AA}\;Bi_2O_3$ layer, $Bi_2Pt$ phase was formed as a second phase in SBTN films, resulting in poor ferroelectric properties. The onset temperature for hysteresis loop can be reduced by heat treating $SBTN/Bi_2O_3/SBTN$ heterostructure. The films with $SBTN/Bi_2O_3(100\;{\AA})/SBTN$ hetero-structure followed by annealing at $650^{\circ}C$ for 30 min show 2Pr and Ec of $5.66\;{\mu}C/\textrm{cm}^2$ and 54 kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.563-566
• /
• 2000

The effect of CuO and CuO-B $i_2$ $O_3$ additives on microwave dielectric properties of (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$were investigated to decrease the sintering temperature for usage of Low Temperature Co-firing Ceramics (LTCC). The (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$ceramics was sintered at 11$65^{\circ}C$. In order to decrease the sintering temperature, CuO and Cuo-B $i_2$ $O_3$ were added in the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$. For the addition of 0.4 wt.% CuO, the sintered density and the dielectric constant of the ceramics were revealed the maximum values of the 6.06g/c $m^2$ and 83 respectively and temperature coefficient of resonance frequency ($\tau$$_{f}$) shifted to the positive value. As increasing B $i_2$ $O_3$to the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$with 0.2 wt.% CuO, the sintered density, the $\varepsilon$$_{r}$ and the Q was decreased, and $\tau$$_{f}$ was minimized at 0.2 wt.% CuO, and 0.2 wt.% B $i_2$ $O_3$. For this composition, dielectric properties were $\varepsilon$$_{r}$ of 81, Q. $f_{0}$ of 4400 GHz, and $\tau$$_{f}$ of 5 ppm/$^{\circ}C$ at sintering temperature of 100$0^{\circ}C$. the relationship between the microstructure and properties of ceramics was studied by X-ray diffraction(XRD), scanning electron microscopy(SEM).copy(SEM).oscopy(SEM).copy(SEM).EM).

• Korean Journal of Crystallography
• /
• v.1 no.1
• /
• pp.1-7
• /
• 1990

It is shown that the symmetry of the incommensurate phase in Ba2NaNb5O15(BSH) belongs to the four dimensional superspace group C from an analysis of the systematic extinction or the rxtra reflections due to the incommensllrate structure. The resulting superstructure is characterizetl by the space group Ima2(C3l) and the origin of the incommensurability in BSN is briefly discussed. Especially. HREM image have shown the prrscnce of discommensurations. In addition. a group-theoretical consideration of structural phase transitions in BSN is suggested.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.193-195
• /
• 2005

[ $0.96[Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}TiO_3]+0.04SrTiO_3+0.3wt%Nb_2O_5+0.2wt%La_2O_3+xwt%ZnO$ ], were studied in order to develope the superior piezoelectric properties of Lead-free piezoelectric ceramics. With increasing amount of ZnO addition, density showed the maximum value of 5.79(g/$cm^3$) at 0wt% ZnO addition, and electromechanical coupling factor($k_p$) and dielectric constant decreased, and mechanical quality factor($Q_m$) increased and showed the maximum value of 280 at 0.4wt% ZnO addition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.30-30
• /
• 2008

Lead-free piezoelectric ceramics 0.97$(Na_{0.5}K_{0.5})NbO_3$-0.03Ba$(Ti_{1-x}Sn_x)O_3$ [NKN-BTS-x] ceramics doped with 1 mol% $MnO_2$ have been fabricated by a sintering technique with muffling. The $MnO_2$-doped NKN-BTS-x ceramics with x$\leq$0.2 have pure orthorhombic perovskite structure at room temperature. The dense microstructure was developed with grain growth as an increase of amount of Sn. Moreover, the addition of Sn was found to have a significant influence on piezoelectric properties. In particular, the $MnO_2$-doped NKN-BTS-0.1 ceramics showed improved piezoelectric properties of piezoelectric constant ($d_{33}$=145pC/N), relatively large electromechanical coupling factor ($k_p$=43%), dielectic constant (${\varepsilon}^T_{33}/{\varepsilon}_0$=676) dielectric loss (tan$\delta$=1.3%).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.03a
• /
• pp.5-5
• /
• 2010

$(Na_{0.5}K_{0.5})NbO_3$ (NKN) ceramic with 1.5 mol% CuO added (NKNC) was well sintered even at a low temperature of $900^{\circ}C$ with the addition of ZnO. Most of the ZnO reacted with the CuO and formed the liquid phase that assisted the densification of the specimens at $900^{\circ}C$. A few $Zn^{2+}$ ions entered the matrix of the specimens and increased the coercive field ($E_c$) and $Q_m$ values of the specimens. High-piezoelectric properties of $k_p=0.37$, $Q_m=755$, and ${\varepsilon}_3\;^T/{\varepsilon}_0=327$ were obtained from the NKNC ceramics containing 1.0 mol% ZnO sintered at $900^{\circ}C$ for 2 h.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.3
• /
• pp.126-129
• /
• 2010

(1-X) $(Na_{0.5}K_{0.5})NbO_3-X$ $K_4CuNb_8O_{23}$ (NKN-X KCN) ceramics were produced using the conventional solid state sintering method, and their sinterability and electric properties were investigated. The density, dielectric constant (${\varepsilon}_r$), piezoelectric constant $d_{33}$, electromechanical coupling factor $k_p$ and mechanical quality factor $Q_m$ value of the NKN ceramics depended upon the KCN content and the sintering temperature. In particular, the KCN addition to the NKN greatly improved the mechanical quality factor $Q_m$ value. The ceramic with X = 2.0 mol% sintered at $1,150^{\circ}C$ possesses the optimum properties (${\varepsilon}_r=241$, $d_{33}=78$, $k_p=0.34$ and $Q_m=1,121$). These results indicate that the ceramic is a promising candidate material for applications in lead free piezoelectric transformer and filter materials.

• Journal of the Korean Ceramic Society
• /
• v.39 no.1
• /
• pp.26-32
• /
• 2002

The effects of $Nd_2O_3$ addition to $Q{\cdot}f_{0}(GHz)$ ceramics with ${\varepsilon}_r$ of 126, $Q{\cdot}f_{0}(GHz)$ of 2240 and of $68\;ppm/^{\circ}C$ on their microwave properties were investigated. For the addition of 5 wt% $Nd_2O_3$, the dielectric constant (${\varepsilon}_r$) showed maximum value of 131, then decreased with the further addition of $Nd_2O_3$. $Q{\cdot}f_{0}(GHz)$ value was still increased to 3533 with 9 wt% $Nd_2O_3$ addition, it is influenced by densification of grain boundary. With more addition of $Nd_2O_3$ up to 18 wt%, the abnormal grain growth have influence on the decreasing of $Q{\cdot}f_{0}(GHz)$ value. But with the further addition of $Nd_2O_3$ over 25 wt%, the $Q{\cdot}f_{0}(GHz)$ value was again increased by the effect of the second phase ($Nd_2Ti_2O_7$) forming. The temperature coefficient of resonant frequency (${\tau}_f$) was decreased from $+\;68\;ppm/^{\circ}C$ with the addition of $Nd_2O_3$, reached $0\;ppm/^{\circ}C$ at 12 wt% addition, and became negative with the further addition of $Nd_2O_3$. The optimum microwave dielectric properties were obtained for $0.3CaTiO_3-0.7(Li_{1/2}Nd_{1/2})TiO_3$ with 9 wt% $Nd_2O_3$ sintered at $1425^{\circ}C$ for 3 hrs. The dielectric constant (${\varepsilon}_r$), the $Q{\cdot}f_{0}(GHz)$ value, and the temperature coefficient of resonant frequency (${\tau}_f$) were 108, 3533, and $+\;6\;ppm/^{\circ}C$, respectively.