• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.107-107
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• 2016

TiCrAlSiN films were developed in order to improve the high-temperature oxidation resistance, corrosion resistance, and mechanical properties of conventional TiN films that are widely used as hard films to protect and increase the lifetime and performance of cutting tools or die molds. In this study, a nano-multilayered TiAlCrSiN film was deposited by cathodic arc plasma deposition. It displayed relatively good oxidation resistance at $700-900^{\circ}C$, owing to the formation protective oxides of $Al_2O_3$, $Cr_2O_3$, and $SiO_2$, and semiprotective $TiO_2$. At $1000^{\circ}C$, the increased temperature led to the formation of the imperfect oxide scale that consisted primarily of the outer ($TiO_2$,$Al_2O_3$)-mixed scale and inner ($TiO_2$, $Al_2O_3$, $Cr_2O_3$)-mixed scale.

• Bulletin of the Korean Chemical Society
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• 제33권4호
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• pp.1269-1274
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• 2012

A visible light responsive N, Mo co-doped $TiO_2$ were prepared by sol-gel method. X-ray diffraction, TEM, $N_2$ adsorption, UV-vis spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy were used to characterize the prepared $TiO_2$ samples. Doping restrained the phase transformation from anatase to rutile and reduced the particle sizes. The band gap was much narrowed after N, Mo co-doping. The photocatalytic activities were tested in the degradation of an aqueous solution of a reactive dyestuff, methylene blue, under visible light. The photocatalytic activities of doped $TiO_2$ were much higher than that of neat $TiO_2$. The photocatalytic stability of N, Mo co-doped $TiO_2$ was much better than that of N doped $TiO_2$.

• 한국세라믹학회지
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• 제38권12호
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• pp.1150-1154
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• 2001

플라즈마 화학기상증착(PECVD)법을 이용하여 실리카 광도파막의 코어로 이용되는 규소질산화막(SiON)을 Si 웨이퍼 위에 SiH$_4$,$N_2$O, $N_2$가스를 혼합하여 저온(32$0^{\circ}C$)에서 증착하였다. Prism coupler 측정을 통해 SiON 굴절률 1.4663~1.5496을 얻었으며, SiH$_4$/($N_2$O+$N_2$) 유량비와 rf power가 각각 0.33과 150W에서 8.67$mu extrm{m}$/h의 증착률을 나타내었다. 또한 SiH$_4$/($N_2$O+$N_2$) 유량비가 감소함에 따라 SiON막의 roughness는 41~6$\AA$까지 감소하였다.

• 동력기계공학회지
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• 제18권6호
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• pp.106-112
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• 2014

The diesel engine, which has high compression ratio than other heat engines, has been using as the main power source of marine transport. Especially, since marine diesel engines offer better specific fuel consumption (SFC), it is environment-friendly compared to those used in other industries. However, attentio should be focused on emissions such as nitrous oxide ($N_2O$) which is generated from combustion of low-grade fuels. Because $N_2O$ in the atmosphere is very stable, the global warming potential (GWP) of $N_2O$ is 310 times as large as that of $CO_2$, and it becomes a source of secondary contamination after photo-degradation in the stratosphere. It has been hitherto noted on the $N_2O$ exhaust characteristics from stationary power plants and land transportations, but reports on $N_2O$ emission from the marine diesel engine are very limited. In this experimental study, a author investigated $N_2O$ emission characteristics by using changed diesel fuel components of nitrogen and sulfur concentration, assessed on the factors which affect $N_2O$ generation in combustion. The experimental results showed that $N_2O$ emission exhibited increasement with increasing of sulfur concentration in fuel. However, all kinds of nitrogen component additives used in experiment could not change $N_2O$ emission.

• 대한화학회지
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• 제55권2호
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• pp.199-203
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• 2011

일차원 수소결합형 배위고분자 $[Cu^{II}(C_{13}H_{17}N_3OBr)(C_8H_5O_4)]{\cdot}2H_2O.CH_3OH$을 합성하여 단결정 X-선 회절 연구로 특성을 규명하였다. 단량체 단위는 사각평면의 중심 $Cu^{II}$를 갖고 있다. 네개의 배위자리 중 세자리는 $N_2O$-주개 세트를 갖는 Schiff 염기형 리간드 (4-bromo-2-[(2-piperazin-1-yl-ethylimino)-methyl]-phenol)가 차지하고, 네 번째 자리는 옆에 있는 테레프탈레이트 단위의 산소 원자가 차지한다. 두개의 인접한 중성분자는 분자간 N-H---O 및 O-H---N 수소결합에 의해 연결되어 이합체 쌍을 형성한다. 각 이합체 쌍은 불연속적인 물 및 메탄올 분자에 의해 수소결합으로 다시 연결되어 일차원 초분자 네트워크를 형성한다.

• 전기학회논문지
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• 제61권11호
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• pp.1646-1649
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• 2012

The $O_2$ annealing technique has considerably suppressed the leakage current of GaN power devices, but this forms NiO at Ni-based Schottky contact with increasing on-resistance. The purpose of the present study was to fabricate 1.5 kV GaN Schottky barrier diodes by improving $O_2$-annealing process and GaN buffer. The proposed $O_2$ annealing performed after alloying ohmic contacts in order to avoid NiO construction. The ohmic contact resistance ($R_C$) was degraded from 0.43 to $3.42{\Omega}-mm$ after $O_2$ annealing at $800^{\circ}C$. We can decrease RC by lowering temperature of $O_2$ annealing. The isolation resistance of test structure which indicated the surface and buffer leakage current was significantly increased from $2.43{\times}10^7$ to $1.32{\times}10^{13}{\Omega}$ due to $O_2$ annealing. The improvement of isolation resistance can be caused by formation of group-III oxides on the surface. The leakage current of GaN Schottky barrier diode was also suppressed from $2.38{\times}10^{-5}$ to $1.68{\times}10^{-7}$ A/mm at -100 V by $O_2$ annealing. The GaN Schottky barrier diodes achieved the high breakdown voltage of 700, 1400, and 1530 V at the anode-cathode distance of 5, 10, and $20{\mu}m$, respectively. The optimized $O_2$ annealing and $4{\mu}m$-thick C-doped GaN buffer obtained the high breakdown voltage at short drift length. The proposed $O_2$ annealing is suitable for next-generation GaN power switches due to the simple process and the low the leakage current.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.48-52
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• 2003

Low melting crystalline solder glasses for CRT sealing were prepared from the composition of PbO 73.0~75.5 wt%, ZnO 12~15 wt%, $B_2O_3$ 7.0~9.0 wt%, BaO 1.5~3.5 wt%, $P_2O_5$ 1.0~2.5 wt%, $Bi_2O_3$ 0.5~20 wt%. The nucleation and crystallization of the crystalline solder glasses were studied by DTA, SEM and XRD. $2PbO{\cdot}ZnO{\cdot}B_2O_3$ crystalline phase was formed from glass matrix by heat-treatment of glass frits Crystalline solder glasses developed from this paper have good firing condition of $430{\sim}440^{\circ}C$ for 10min and good physical properties

• 전자공학회논문지D
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• 제35D권12호
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• pp.68-74
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• 1998

본 논문에서는 electron cyclotron resonance (ECR) N₂O-플라즈마 산화막을 게이트 산화막으로 사용한 다결정 실리콘 박막 트랜지스터 (TFT)의 성능과 단채널 특성에 대하여 연구하였다. ECR NE₂O-플라즈마 게이트 산화막을 사용한 소자는 열산화막을 이용한 경우에 비해 우수한 성능과 억제된 단채널 효과를 나타낸다. 얇은 ECR N2O-플라즈마 산화막을 사용하여 n채널 TFT의 경우 3 ㎛, p채널 TFT의 경우 1㎛ 게이트 길이까지 문턱 전압 감소가 없는 소자를 얻었다. 이러한 특성 향상은 부드러운 계면, passivation 효과, 그리고 계면과 박막 내부에 존재하는 강한 Si ≡ N 결합 등에 기인한다.

• 한국토양비료학회지
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• 제49권6호
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• pp.720-730
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• 2016

Greenhouse-gas emission factors are widely used to estimate emissions arising from a defined unit of a specific activity. Such estimates are used both for international reporting to the United Nations Framework Convention on Climate Change (UNFCCC) and for myriad national and sub-national reporting purposes (for example, European Union Emissions Trading Scheme; EU ETS). As with the other so-called 'Kyoto protocol GHGs', the Intergovernmental Panel on Climate Change (IPCC) provides a methodology for national and sub-national estimation of $N_2O$ emissions, based on the sector from which the emissions arise. The objective of this study was to develop a integrated emission factor to estimate the direct $N_2O$ emission from an agricultural field cultivated with the red pepper, soy bean, spring cabbage, autumn cabbage and potato in 2010~2012. Emission factor of $N_2O$ calculated using accumulated $N_2O$ emission, N fertilization rate, and background $N_2O$ emission over three year experiment was $0.00596{\pm}0.001337kg$ $N_2O-N(N\;kg)^{-1}$. More extensive studies need to be conducted to develop $N_2O$ emission factors for other upland crops in the various regions of Korea because $N_2O$ emission is influenced by many factors including climate characteristics, soil properties, and agricultural practices.

• 한국세라믹학회지
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• 제28권1호
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• pp.53-59
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• 1991

The reaction product between Si3N4 and ZrO2 has been studied by heat treatment of Si3N4-Zr(Y)O2 composite in high vacuum(<10-5 torr) and in air at $700^{\circ}C$. ZrN was formed after heat treatment in vacuum and easily oxidized after heat treatment in air. The amount of ZrN is related to the Y2O3 content dissolved in ZrO2. After the heat treatment in air the toughness increased and the spalling due to the oxidation of ZrN in specimen surface was observed. As a result, it is suggested that the formation of ZrN phase in Si3N4-ZrO2 composite enhance the toughness of the composite in an oxidation conditon.