• 제목/요약/키워드: $N_2O$ plasma

검색결과 545건 처리시간 0.027초

FBAR용 AlN/Al/SiO$_2$/Si 박막의 결정학적 특성에 관한 연구 (A study on the crystallographic properties of AlN/Al/SiO$_2$/Si thin film for FBAR)

  • 김건희;금민종;최형욱;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.151-154
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    • 2003
  • AlN/Al/SiO$_2$/Si thin films for application to FBAR(Film Bulk Acoustic Resonator) devices were prepared by FTS(Facing Targets sputtering system) apparatus which provides a stable discharge at low gas pressures and can deposit high quality thin films because of the substrate located apart from the plasma. The AlN thin films were deposited on a $SiO_2(1{\mu}m)/Si(100)$ substrate using an Al bottom electrode. The process parameters were fixed such as sputering power of 200W, working pressures of 1mTorr and AlN thin film thickness of 800nm, respectively and crytallographic characteristics of AlN thin films were investigated as a function of $N_2$ gas flow rate$[N_2/(N_2+Ar)]$. Thickness of AlN thin films were measured by $\alpha$-step, the crystallographic characteristics and c-axis preferred orientation were evaluated by XRD.

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PDP 격벽용 무연 유전체 paste의 제조 및 특성 (Preparation and properties of PbO free dielectric paste for PDP barrier rib)

  • 손명모;이헌수;이상근;박희찬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.876-879
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    • 2003
  • The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system $BaO-ZnO-B_2O_3-V_2O_5$. DTA, XRD and SEM were used to study and characterize $BaO-ZnO-B_2O_3-V_2O_5$ glasses. PbO free paste developed at this paper has thermal expansion of $74{\times}10^{-7}/^{\circ}C$, DTA transformation point of $460^{\circ}C$, and firing condition of $560^{\circ}C$, 10min.

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플라즈마 공정을 이용한 고추역병균(Phytophthora capsici) 불활성화 모델의 적용 (Application of Inactivation Model on Phytophthora Blight Pathogen (Phytophthora capsici) using Plasma Process)

  • 김동석;박영식
    • 한국환경과학회지
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    • 제24권11호
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    • pp.1393-1404
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    • 2015
  • Ten empirical disinfection models for the plasma process were used to find an optimum model. The variation of model parameters in each model according to the operating conditions (first voltage, second voltage, air flow rate, pH, incubation water concentration) were investigated in order to explain the disinfection model. In this experiment, the DBD (dielectric barrier discharge) plasma reactor was used to inactivate Phytophthora capsici which cause wilt in tomato plantation. Optimum disinfection models were chosen among ten models by the application of statistical SSE (sum of squared error), RMSE (root mean sum of squared error), $r^2$ values on the experimental data using the GInaFiT software in Microsoft Excel. The optimum models were shown as Log-linear+Tail model, Double Weibull model and Biphasic model. Three models were applied to the experimental data according to the variation of the operating conditions. In Log-linear+Tail model, $Log_{10}(N_o)$, $Log_{10}(N_{res})$ and $k_{max}$ values were examined. In Double Weibull model, $Log_{10}(N_o)$, $Log_{10}(N_{res})$, ${\alpha}$, ${\delta}_1$, ${\delta}_2$, p values were calculated and examined. In Biphasic model, $Log_{10}(N_o)$, f, $k_{max1}$ and $k_{max2}$ values were used. The appropriate model parameters for the calculation of optimum operating conditions were $k_{max}$, ${\alpha}$, $k_{max1}$ at each model, respectively.

질소, 산소, 아르곤 플라즈마와 자외선에 의하여 표면 처리한 ITO의 특성 (Characteristics of ITO with surface treatment by N2, O2, Ar Plasma and UV)

  • 배경태;정선영;강성호;김현기;김병진;주성후
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.90-90
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    • 2018
  • 디스플레이는 다수의 가로 전극과 세로 전극으로 구성되고, 전극에 신호를 주어 동작하도록 하는 원리이다. 이 디스플레이에는 전기가 통하고 투명한 전극이 필수적으로 사용되고 있고, 대표적인 투명 전극으로 ITO (Indium Tin Oxide)가 있다. ITO 박막은 $In_2O_3$에 Sn을 첨가하여 $Sn^{4+}$ 이온이 $In^{3+}$ 이온을 치환하고 이 과정에서 잉여 전자가 전기전도에 기여하는 구조이다. ITO 박막은 표면 처리 방법에 따라 표면 상태가 크게 변화한다. 플라즈마를 이용한 표면 처리는 환경오염이 적으며 강도, 탄성률 등과 같은 재료의 기계적 특성을 변화시키지 않으면서 표면 특성만을 변화시킬 수 있는 방법으로 알려져 있다[1]. UV (Ultraviolet)를 조사한 표면처리는 ITO 표면의 탄소를 제거하고, 표면 쌍극자를 형성하며, 표면의 조성을 변화시킬 수 있으며, 페르미 에너지 준위를 이동시킬 수 있어 ITO의 일함수를 증가시킬 수 있다[2]. ITO에 대한 다양한 연구가 수행되었음에도 불구하고 보다 다양한 관점에서의 연구가 지속될 필요가 있다. 따라서 본 연구에서는 다양한 조건으로 표면 처리한 ITO 표면의 일함수, 면저항, 표면 형상, 평탄도, 접촉각 등에 대해 알아보고자 한다. 세정한 ITO, 세정 후 UV 처리한 ITO (UV 처리 시간 2분, 4분 6분, 8분), 세정 후 $N_2$, $O_2$, Ar의 공정 가스를 사용하여 Plasma 처리한 ITO로 표면 처리 조건을 변화하였다. 표면 처리한 ITO의 특성은 Kelvin Probe를 이용한 일함수, 물방울 형상의 각도를 측정한 접촉각, AFM (Atomic Force Microscope)을 이용한 평탄도, 가시광선 (380~780 nm) 파장에 대한 투과도와 면저항을 측정하였다. 접촉각은 세정한 ITO의 경우 $45.5^{\circ}$에서 세정 후 UV를 조사한 ITO의 경우 UV 8분 조사 시 $27.86^{\circ}$로 감소하였고, $N_2$, $O_2$, Ar 가스를 사용하여 Plasma 처리한 ITO는 모두 $10^{\circ}$ 미만을 나타내었다. 플라즈마 처리에 의하여 접촉각이 현저하게 개선되었다. ITO의 면저항은 표면 처리 조건에 따라 $9.620{\sim}9.903{\Omega}/{\square}$로 그 차이가 매우 적어 표면처리에 의하여 면저항의 변화는 없는 것으로 판단된다. 가시광선 영역에서의 투과도는 공정 조건에 따라 87.59 ~ 89.39%로 그 차이가 적어 표면처리에 의한 변화를 나타내지는 않은 것으로 판단된다. 표면 처리 조건에 따른 평탄도 $R_{rms}$는 세정한 ITO의 경우 4.501 nm로부터 UV 2, 4, 6, 8분 처리한 경우 2.797, 2.659, 2.538, 2.584 nm로 평탄도가 개선되었다. $N_2$, $O_2$, Ar 가스를 사용하여 플라즈마 처리한 ITO의 경우 평탄도 $R_{rms}$는 2.49, 4.715, 4.176 nm로 사용한 가스의 종류에 따라 다른 경향을 나타내었다. 표면 처리 조건에 따른 평탄도 Ra는 세정한 ITO의 경우 3.521 nm로부터 UV 2, 4, 6, 8분 처리한 경우 1.858, 1.967, 1.896, 1.942 nm를, $N_2$, $O_2$, Ar 가스를 사용하여 플라즈마 처리한 ITO의 경우는 1.744, 3.206, 3.251 nm로 평탄도 $R_{rms}$와 유사한 경향을 나타내었다.

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The Dry Etching of TiN Thin Films Using Inductively Coupled CF4/Ar Plasma

  • Woo, Jong-Chang;Choi, Chang-Auck;Joo, Young-Hee;Kim, Han-Soo;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • 제14권2호
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    • pp.67-70
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    • 2013
  • In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing $CF_4$ content from 0 to 20 % in $CF_4$/Ar plasma. The TiN etch rate reached maximum at 20% $CF_4$ addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in $CF_4$/Ar plasma.

N형 양면 수광 태양전지를 위한 레이저 공정의 후면 패시베이션 적층 구조 영향성 (Effect of Laser Ablation on Rear Passivation Stack for N-type Bifacial Solar Cell Application)

  • 김기륜;장효식
    • 한국재료학회지
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    • 제30권5호
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    • pp.262-266
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    • 2020
  • In this paper, we investigated the effect of the passivation stack with Al2O3, hydrogenated silicon nitride (SiNx:H) stack and Al2O3, silicon oxynitride (SiONx) stack in the n type bifacial solar cell on monocrystalline silicon. SiNx:H and SiONx films were deposited by plasma enhanced chemical vapor deposition on the Al2O3 thin film deposited by thermal atomic layer deposition. We focus on passivation properties of the two stack structure after laser ablation process in order to improve bifaciality of the cell. Our results showed SiNx:H with Al2O3 stack is 10 mV higher in implied open circuit voltage and 60 ㎲ higher in minority carrier lifetime than SiONx with Al2O3 stack at Ni silicide formation temperature for 1.8% open area ratio. This can be explained by hydrogen passivation at the Al2O3/Si interface and Al2O3 layer of laser damaged area during annealing.

Preliminary study on the use of near infrared spectroscopy for determination of plasma deuterium oxide in dairy cattle

  • Purnomoadi, Agung;Nonaka, Itoko;Higuchi, Kouji;Enishi, Osamu;Amari, Masahiro;Terada, Fuminori
    • 한국근적외분광분석학회:학술대회논문집
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    • 한국근적외분광분석학회 2001년도 NIR-2001
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    • pp.4101-4101
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    • 2001
  • Information of body composition (fat and protein) in living animal is important to determine the nutrients requirement. Deuterium oxide (D2O) dilution techniques, as one of isotope dilution techniques have been useful for the prediction of body composition. However, the determination of D2O concentration is time consuming and complicated. Therefore this study was conducted to develop a new method to predict D2O concentration in plasma using near infrared spectroscopy technique (NIRS). Four dairy cows in early lactation were used. They were fed total mixed ration containing conr silage, timothy hay, and concentrates to make 17.0%CP and 14.0 MJDE/kgDM. Dosing D2O was at week 1,3 and 5 after parturition. After dosing D2O, the blood was collected from hour 0 to 72. Blood samples were then centrifuge at 3,000 rpm for 10 minutes to obtain plasma. D2O concentration was analyzed by gas chromatograph (deuterium oxide analyzable system, HK102, Shokotsusyou) after extracted from plasma by liophilization. Plasma sample was scanned by NIRS using Pacific Scientific (Neotec) model 6500 (Perstorp Analytical, Silver Spring, MD) in the range of wavelength from 1100 to 2500 nm. Calibration equation was developed using multiple linear regression. Sample from one animal (cow #550; n: 74) was used for developing the calibration while the rest three animals were used for validating the equation. The range, R and SEC of the calibration set samples were 135-925 ppm, 0.93 and 48.1 ppm, respectively. Validation of the calibration equation for three individual cows was done and the average of NIR predicted value of D2O at each collection time from three weeks injection showed a high correlation. The range, r and 53 of plasma from cow #474 were 322-840 ppm,0.93 and 53.1; cow #478 were 146-951 ppm,0.95 and 39.8; cow #942 were 313-885 ppm,0.95 and 37.2, respectively. Judgement of accuracy based on ratio of standard deviation and standard error in validation set samples (RPD) for cow #474, #478 and #942 were 2.2,4.3 and 3.4, respectively. The error in application due to the variation between individual was considered smaller than the bias from collection period, however, this prediction can be overcome with correction of standard zero-minute concentration of blood. The results of this preliminary study on the use of NIRS for determination of D2O in plasma showed very promising as shown by a convenient and satisfy accuracy. Further study on various physiological stage of animal should be done.

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A Study on Improvement and Degradation of Si/SiO2 Interface Property for Gate Oxide with TiN Metal Gate

  • Lee, Byung-Hyun;Kim, Yong-Il;Kim, Bong-Soo;Woo, Dong-Soo;Park, Yong-Jik;Park, Dong-Gun;Lee, Si-Hyung;Rho, Yong-Han
    • Transactions on Electrical and Electronic Materials
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    • 제9권1호
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    • pp.6-11
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    • 2008
  • In this study, we investigated effects of hydrogen annealing (HA) and plasma nitridation (PN) applied in order to improve $Si/SiO_2$ interface characteristics of TiN metal gate. In result, HA and PN showed a positive effect decreasing number of interface state $(N_{it})$ respectively. After FN stress for verifying reliability, however, we identified rapid increase of $N_{it}$ for TiN gate with HA, which is attributed to hydrogen related to a change of $Si/SiO_2$ interface characteristic. In contrast to HA, PN showed an improved Nit and gate oxide leakage characteristic due to several possible effects, such as blocking of Chlorine (Cl) diffusion and prevention of thermal reaction between TiN and $SiO_2$.

Oxygen Stoichiometry Modification by $O_2$-Plasma Treatment in $La_{0.7}Ca_{0.3}MnO_{3-\delta}$

  • Kim, H. S.;Lee, C. H.;Lee, Cheol-Eui;Y. H. Jeong;N. H. Hur
    • Journal of Magnetics
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    • 제5권3호
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    • pp.99-101
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    • 2000
  • Oxygen-plasma effects of single crystal and thin film samples of $La_{0.7}Ca_{0.3}MnO_{3-\delta}$ have been studied. Our resistivity measurements indicate that oxygen plasma treatment gives rise to oxygen diffusion into bulk regions, which results in a decrease of $Mn^{3+}$ concentration in oxygen nonstoichiometric $La_{0.7}Ca_{0.3}MnO_{3-\delta}$ and in the activation energies of Holstein's small polarons in the paramagnetic region.

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