• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
• /
• pp.36-36
• /
• 1998

• E2M - 전기 전자와 첨단 소재
• /
• 제8권1호
• /
• pp.90-94
• /
• 1995

Reactive Ion Etching(RIE) of Si$_{3}$N$_{4}$ in a CF$_{4}$/O$_{2}$ gas plasma exhibits such good anisotropic etching properties that it is widely employed in current VLSI technology. However, the RIE process can cause serious damage to the silicon surface under the Si$_{3}$N$_{4}$ layer. When an atmospheric pressure chemical vapor deposited(APCVD) SiO$_{2}$ layer is used as a etch-stop material for Si$_{3}$N$_{4}$, it seems inevitable to get a good etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$. Therefore, we have undertaken thorough study of the dependence of the etch rate of Si$_{3}$N$_{4}$ plasmas on $O_{2}$ dilution, RF power, and chamber pressure. The etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$ has been obtained its value of 2.13 at the RF power of 150 W and the pressure of 110 mTorr in CF$_{4}$ gas plasma diluted with 25% $O_{2}$ by flow rate.

• Korean Chemical Engineering Research
• /
• 제44권6호
• /
• pp.588-596
• /
• 2006

폴리스티렌 막(polystyrene membrane, PS)의 표면을 Ar, $O_2$ 플라즈마로 처리하고, 처리 전후의 변화를 관찰하였고, $CO_2$, $N_2$의 투과도와 $N_2$에 대한 $CO_2$의 선택도는 연속흐름 기체 투과 분석장치(GPA)를 이용하여 측정하였다. Ar플라즈마 처리의 경우 O/C비율이 0에서 0.179로 증가하고, 표면 거칠기가 $15.86{\AA}$에서 $71.64{\AA}$로 증가함으로써 접촉각은 처리전의 $89.16^{\circ}$에서 $18.1^{\circ}$로 감소하였다. 따라서 플라즈마 처리는 막표면을 높은 친수성을 갖도록 만들었다. $CO_2$의 투과도와 선택도에 대한 Ar플라즈마 처리최적조건은 60 W, 2 min, $70^{\circ}C$이며, 투과도와 선택도는 각각 $2.1{\times}10^{-12}[m^3(STP){\cdot}m/m^2{\cdot}sec{\cdot}atm]$와 4.51이었다. $O_2$플라즈마 처리의 경우에, 접촉각은 O/C비율(0.189)과 표면 거칠기($57.10{\AA}$)의 증가에 의해 $13.56^{\circ}$로 감소하였다. 최적의 처리조건은 90 W-2 min-$70^{\circ}C$이며, 값 $7.1{\times}10^{-12}[m^3(STP){\cdot}m/m^2{\cdot}sec{\cdot}atm]$와 값 11.5이었다. 플라즈마 처리 후 막 표면의 변화는 표면에서의 교차결합과 식각효과의 경쟁적인 관계에 의해 결정된다. 결국 플라즈마 처리된 막의 투과도와 선택도가 플라즈마 기체, 처리시간, 출력세기등과 같은 플라즈마 상태를 제어함으로써 향상되었음을 확인할 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
• /
• pp.690-693
• /
• 2003

An Si substrate (100) was oxidized at $400^{\circ}C$ in inductively coupled oxygen plasma. Interstitial oxygen was found in the Si substrate at the initial stage of oxidation by IR measurements. An x-ray rocking curve of Si substrates showed a lower peak intensity due to lattice distortion by the interstitial oxygen. The refractive index of thin oxides, below which interstitial oxygen existed in the Si substrate, was smaller than the refractive index of thick oxides, below which no interstitial oxygen existed. The interstitial oxygen was found by plasma oxidation using $O_{2}$ gas and $N_{2}O$ gas. The inductively coupled plasma oxidation using $N_{2}O$ gas was performed by atomic oxygen, not by molecular oxygen, indicating that atomic oxygen in plasma is responsible for the incorporation of interstitial oxygen.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
• /
• pp.268-272
• /
• 2000

Oxygen-plasma effects of single crystal and thin film samples of L $a_{0.7}$C $a_{0.3}$Mn $O_{3-}$$\delta$/ have been studied. Our resistivity measurements indicate that oxygen plasma treatment gives rise to oxygen diffusion into bulk regions, which results in a decrease of M $n^{3+}$ concentration in oxygen nonstoichiometric L $a_{0.7}$C $a_{0.3}$Mn $O_{3-}$$\delta$/ and in the activation energies of Holstein's small polarons in the paramagnetic region.n.egion.n.n.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
• /
• pp.895-897
• /
• 1998

The optical spectra of microwave plasma by four kinds of gases($N_2$, $N_2-CH_4$, $H_{2}-CH_{4}$ and Air-$CH_4$) have been measured for investigating 388.4[nm] peak which has the same intensity as $H_{\alpha}$(656.4[nm]) peak. A 388.4[nm] peak by $N_2$ plasma, $N_{2}-CH_{4}$ plasma and Air-$CH_4$ plasma may be CN peak because it is with 337.1, 357.8 and 316.0[nm] peaks by $N_2$. And a 388.4[nm] peak by $H_{2}-CH_{4}$ plasma without by $N_2$ 337.1, 357.8 and 316.0[nm] peaks may be CH peak. In the investigation results for optical spectra by $H_{2}-CH_{4}$ plasma and $H_{2}-CH_{4}-O_{2}$ plasma, the density of hydrogen atom was increased because oxygen decompose hydrogen molecules in $H_{2}-CH_{4}$ plasma with oxygen. These hydrogen atom decompose $CH_4$ and increase CH radical. And the crystalline of deposited diamond was good and the growth rate increased.

• 공업화학
• /
• 제9권3호
• /
• pp.383-387
• /
• 1998

플라즈마 기체 종류($O_2$, $N_2$, and $O_2/N_2$)에 따른 저밀도 폴리에틸렌의 친수성 표면개질에 미치는 영향이 표면에 생성된 기능성 그룹과 물의 접촉각과의 관계로부터 조사되었다. XPS와 FT-IR ATR 분석을 통하여 플라즈마 처리된 LDPE 표면은 카보닐, 카복실 등의 산소 기능기들이 생성되었고, 질소 플라즈마 처리와 산소와 질소 혼합 기체 플라즈마 처리에 의해 표면에 질소 기능기가 생성됨이 확인되었다. rf-출력과 처리시간에 대한 접촉각 변화에서 질소 플라즈마 처리가 가장 작은 값을 나타내었고, 플라즈마 기체 종류에 관계없이 복합매개 변수 [(W/FM)t]가 520~550GJs/kg 부근에서 가장 효과적인 친수성 개질 반응이 이루어지는 최적조건임을 알 수 있었다.

• 한국세라믹학회지
• /
• 제46권5호
• /
• pp.467-471
• /
• 2009

Effects of boron and carbon on the densification and thermal decomposition of an AlN-SiC-$TiB_2$ system were investigated. $SiO_2$ was mostly removed by the addition of carbon, while $Al_2O_3$ formed $Al_4O_4C$ and promoted the densification of the systems above $1850^{\circ}C$. Rather porous specimens were obtained without the additives after hot pressing at $2100^{\circ}C$, while densification was mostly completed at $2000^{\circ}C$ by using the additives. The sintering temperature decreased further to $1950^{\circ}C$ by applying spark plasma sintering. The additives promoted the shrinkage of AlN by forming a liquid phase which was originated from the carbo- and boro-thermal reduction of $Al_2O_3$ and AlN.

• 한국항해항만학회:학술대회논문집
• /
• 한국항해항만학회 2000년도 추계학술대회논문집
• /
• pp.116-119
• /
• 2000

The advantage of plasma-sprayed coating is their good resistance against thermal shock due to the porous state of the coated layer with a consequently low Youngs modulus. However, the existence of many pores with a bimodal distribution and a laminar structure in the coating reduces coating strength and oxidation protection of the base metals. In order to counteract these problems, there have been many efforts to obtain dense coatings by spraying under low pressure or vacuum and by controlling particle size and morphology of the spraying materials. The aim of the present study is to survey the effects of the HIP treatment between 1100 and 130$0^{\circ}C$ on plasma-sprayed oxide coating of A1$_2$O$_3$, A1$_2$O$_3$-SiO$_2$on the metal substrate (type C18N10T stainless steel). These effects were characterized by phase identification, Vickers hardness measurement, and tensile test before and after HIPing. These results show that high-pressure treatment has an advantage for improving adhesive strength and Vickers hardness of plasma-sprayed coatings.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.116-119
• /
• 2000

The advantage of plasma-sprayed coating is their good resistance against thermal shock due to the porous state of the coated layer with a consequently low Youngs modules. However, the existence of many pores with a bimodal distribution and a laminar structure in the coating reduces coating strength and oxidation protection of the base metals. In order to counteract these problems, there have been many efforts to obtain dense coatings by spraying under low pressure or vacuum and by controlling particle size and morphology of the spraying materials. The aim of the present study is to survey the effects of the HIP treatment between 1100 and 130$0^{\circ}C$ on plasma-sprayed oxide coating of A1$_2$O$_3$, A1$_2$O$_3$-SiO$_2$ on the metal substrate (type C18N10T stainless steel). These effects were characterized by phase identification, Vickers hardness measurement, and tensile test before and after HIPing, These results show that high-pressure treatment has an advantage for improving adhesive strength and Vickers hardness of plasma- sprayed coatings.