• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.269-271
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• 2005

Using optimized sputtering condition of a-Si and $SiO_2$ thin film, we can obtained the large grained poly-Si film on PES substrate. The gate dielectric grown by plasma enhanced atomic layer deposition, laser activation and organic interlayer dielectric material make TFTs on PES possible with mobility of $11cm^2/Vs$ (nMOS) and $7cm_2/Vs$ (pMOS).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.9
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• pp.1615-1622
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• 2008

We have fabricated the poly-silicon thin film transistor(TFT) which has the LDD-region with graded spacer. The devices of n-channel poly-si TFT's hydrogenated by $H_2$ and $H_2$/plasma processes were fabricated for the devices reliability. We have biased the devices under the gate voltage stress conditions of maximum leakage current. The parametric characteristics caused by gate voltage stress conditions in hydrogenated devices are investigated by measuring/analyzing the drain current, leakage current, threshold voltage($V_{th}$), sub-threshold slope(S) and transconductance($G_m$) values. As a analyzed results of characteristics parameters, the degradation characteristics in hydrogenated n-channel polysilicon TFT's are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si grain boundary due to dissolution of Si-H bonds. The structure of novel proposed poly-Si TFT's are the simplicities of the fabrication process steps and the decrease of leakage current by reduced lateral electric field near the drain region.

• Journal of Chest Surgery
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• v.25 no.5
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• pp.451-457
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• 1992

The hollow fiber oxygenator is the most advanced one for the cardiopulmoanry bypass. They have two different types of the hollow fiber systems according to the way how the blood go through the fibers. One is inside blood flow type and the other outside type. In order to find out which is better to prevent blood cell destruction, we selected 40 valve replacing patients and divided them into 2 groups prospectively. In group I [n=20], inside blood flow type[BCM-7a], CO2 excretion is more effective than group II, that is partly because of the relative large surface area of the BCM-7. In group II [n=20], outside blood flow type [MAXIMAa], they have better quality to preserve platelet count. We also studied about several other items such as SaO2, Hemoglobin and RBC, WBC, fibrinogen, LDH, plasma hemoglobin, haptoglobulin and so on. But we cannot find any differences between two groups with any statistical meanings [p<0.05]. We conclude that both of two oxygenators are excellent in the aspects of gas exchange and blood cell preservation.

• Journal of Environmental Health Sciences
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• v.43 no.3
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• pp.194-201
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• 2017

Objectives: Zinc oxide nanoparticles (ZnO NPs) are widely used in various commercial products, but they are exposed to the environment and can induce toxicity. In this study, we investigated the environmental fate and bioaccumulation of ZnO NPs in a microcosm. Methods: The microcosm was composed of water, soil (Lufa Soil 2.2) and organisms (Oryzias latipes, Neocaridina denticulata, Semisulcospira libertina). Point five and 5 mg/L of ZnO NPs were exposed in the microcosm for 14 days. Total Zn concentrations were measured using an Inductively Coupled Plasma Mass Spectrometer (ICP-MS) and intracellular NPs were observed using Transmission Electron Microscopy (TEM). Results: In the initial stages of exposure, the Zn concentrations in water increased in all exposure groups and then decreased, while the Zn concentration in soil increased after three hours for the 5 mg/L solution. Zn concentrations also showed increasing trends in N. denticulata and S. libertina at 0.5 and 5 mg/L, and in O. latipes at 5 mg/L. Accumulation of NPs was found in the livers of O. latipes and hepatopancreas of N. denticulata and S. libertina. Conclusions: In the early stages of exposure, ZnO NPs remained in the water, and then were transported to the soil and test species. Unlike other species, total Zn concentrations in N. denticulata and S. libertina increased for both 0.5 mg/L and 5 mg/L. Therefore, ZnO NPs were more easily accumulated in zoobenthos than in fish.

• Biomolecules & Therapeutics
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• v.7 no.4
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• pp.342-346
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• 1999

This study was performed to investigate the effect of cyclosporine (CsA) on glucose tolerance and peripheral insulin sensitivity in normal Sprague-Dawley rats. After daily treament of CsA (10 mg/kg, i.p.) for two weeks, glucose tolerance tests were carried out by the treatment of glucose (Glu, 2 g/kg, i.p.) alone or in conjunction with exogenous insulin (Ins; human regular insulin, 5 U/kg, s.c.) and measured the decrement of area under the time-plasma glucose concentration curve ($AUC_{o\longrightarrow120}$; g.min/ml) by the trapezoidal rule. The rats were divided into three groups (Glu- (Control), Ins+Glu- and CsA+Ins+Glu-, n=7 in each group). The $AUC_{o\longrightarrow120}$ of the CsA+Ins+Glu-group was significantly (p<0.01) lower than that of Glu-group (61.0% of control) and significantly (p<0.05) higher than that of Ins+Glu-group (197.4% of Ins+Glu-). The CsA+Ins+Glu- grou showed higher levels of maximal blood glucose concentration and higher $AUC_{o\longrightarrow120}$ than those of Ins+Glu-group in normal rats. Besides direct pancreatic toxicity of CsA previously reported (Hahn et al., 1972), these results suggest that CsA also make the possibility to induce peripheral insulin insensitivity and glucose intolerance in normal rats.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.11a
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.565-571
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• 1999

In this study, high-density plasma etching characteristics of ITO(indium tin oxide) films used for transparent electrode in dispaly devices were investigated. Plasma diagnostic and surface analysis tools were used to understand etch reaction mechanism. The etch rate of ITO was increased by the increase of reactive radicals such as H and $CH_3$ with the addition of moderate amount of $CH_4$ to Ar. However, the addition of excess amount of $CH_4$ decreased possibly due to the increased polymer formation on the ITO surface being etched. The increase of source power and bias boltage increased ITO etch rates but it decreased selectivities over under-layers $(SiO_2, Si_3N_4)$. The increase of working pressure up to 20mTorr also increased ITO etch rates, however the further increased of the pressure decreased ITO etch rates. From the analysis of XPS, a peak related to the polymer of hydrocarbon was observed on the etched ITO surface especially for high $CH_4$ conditions and it appears to affect ITO etch rates.

• Biomolecules & Therapeutics
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• v.9 no.1
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• pp.26-32
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• 2001

This study was investigated about the effect of glibenclamide (GLY) which is $K^{+}$ channel blocker on renal function in rabbit, GLY, when given into the vein, produced the diuretic action accompanied with the increases of amounts of N $a^{+}$ and $K^{+}$ excreted into urine ( $E_{Na}$ , $E^{K}$), and then osmolar and negative free water clearances ( $C_{osm}$, $T^{C}$$_{H2O}$), fraction excretory rates of filtered N $a^{+}$ and $K^{+}$ ( $F_{Na}$ , $F_{K}$) and ratios of $E_{K}$ against $E_{Na}$ were augmented. Filtration fraction (FF) were reduced because renal plasma flow (RPF) were not changed but glomerular filtration rates (GFR) were diminished. GLY administered into a renal artery exhibited significant reduction of urine volume along with the decreases of GFR and RPF in only experimented kidney whereas changes of renal function was not observed in control kidney. GLY given intracerebroventricularly exhibited diuretic action along with the increase of $E_{Na}$ , $E_{K}$ and $F_{Na}$ , $F_{K}$ by small dose which was not affect on renal function when it given into the vein. Above results suggest that GLY given into the vein in rabbit produce the diuretic action by inhibition of electrolytes reabsorption in renal tubules through central function. function.n. function.ion.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.42-49
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• 2011

We deposited $SiN_x$ thin films by using PECVD technique at $200^{\circ}C$ with various flow ratios of the $SiH_4/N_2$ gases. The photoluminescence measurements revealed that the maximum emission wavelength shifted to long wavelength as the ratio increased, however, positions of the several peak wavelengths, such as 1.9, 2.2, 2.4, and 3.1 eV, were independent on the ratio. Changes of the photoluminescence spectra were measured in the $N_{2}-$, $H_{2}-$, and $O_2$-annealed films. The luminescence intensities increased after the annealing process. In particular, the maximum emission wavelength shifted to short wavelength after $H_{2}-$ or $O_2$-annealing. But there were still several peaks on the spectra of all annealed films, several peak positions remained to be unchanged after the annealing. As for the light emission mechanism, we have considered the defect states of the Si- and N- dangling bonds in the $SiN_x$ energy gap, so that the energy transitions from/to the conduction/valence bands and the defect states in the gap were attributed to the light emission in the $SiN_x$ films. The experimental results point to the possibility of a Si-based light emission materials for flexible Si-based electro-optic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.339-339
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• 2011

진공 플라즈마와 달리 개방된 공간에서 방전되는 대기압 플라즈마는 진공상태에서 수행되는 에칭, 증착 등의 복잡한 플라즈마 공정을 경제적이고 신속하게 수행할 수 있어, 최근 들어 연구가 활발히 진행 중이다. 이와 관련하여 He, Ar, $N_2$, $O_2$, Air 등의 여러 종류의 기체를 50 kHz 고전압에서 방전하여 대기 중에서 저온 플라즈마 공정이 가능한 아크젯 타입의 플라즈마 소스를 개발하였다. 개발된 플라즈마 소스에서는 입력전압, 기체유량, 노즐의 구조와 크기 등의 여러 운전변수에 따라 플라즈마의 방전특성이 변화되었다. 특히 본 연구에서는 아크젯의 플라즈마 발생부의 물질성분(SUS, Aluminum, Cupper)에 따른 플라즈마의 기체온도 및 전자여기 온도의 변화를 광방출분광법(OES)를 이용한 Synthetic spectrum method와 Boltzmann plot method을 통해 살펴보았다. 전압-전류 특성곡선, 시간분해 이미지 촬영법, 기체온도 측정법 등을 이용하여 발생된 플라즈마의 물리적인 특성을 분석하였다. 특히 물질의 성분에 따라 발생되는 플라즈마의 기체 및 전자여기 온도가 이차 전자 방출계수 및 물질의 전도도와의 상관관계가 있는지 연구가 진행 중이다.