• Title/Summary/Keyword: $N_2O$ Formation

Search Result 856, Processing Time 0.032 seconds

Unexpected Rate Retardation in the Formation of Phthalic Anhydride from N-Methylphthalamic Acid in Acidic H2O-CH3CN Medium

  • Ariffin, Azhar;Khan, M. Niyaz
    • Bulletin of the Korean Chemical Society
    • /
    • v.26 no.7
    • /
    • pp.1037-1043
    • /
    • 2005
  • Kinetic study on the cleavage of N-methylphthalamic acid (NMPA) in mixed acidic aqueous-acetonitrile solvent reveals the formation of both phthalic anhydride (PAn) (through O-cyclization) and N-methylphthalimide (NMPT) (through N-cyclization). The formation of NMPT varies from $\sim$20% to $\sim$3% with the increase in the content of acetonitrile from 2 to 70% v/v. Pseudo first-order rate constants for the formation of PAn are more than 4-fold larger than those for the formation of NMPT at 2% v/v $CH_3CN$ in mixed aqueous solvents. Pseudo first-order rate constants for alkaline hydrolysis of NMPT reveal a nonlinear decrease with increase in the content of $CH_3CN$ in mixed aqueous solvents.

High-temperature Oxidation of the TiAlCrSiN Film (TiAlCrSiN 박막의 고온 산화 부식)

  • Lee, Dong-Bok;Kim, Min-Jeong;Abro, M.A.;Yadav, P.;Shi, Y.
    • Proceedings of the Korean Institute of Surface Engineering Conference
    • /
    • 2016.11a
    • /
    • pp.107-107
    • /
    • 2016
  • TiCrAlSiN films were developed in order to improve the high-temperature oxidation resistance, corrosion resistance, and mechanical properties of conventional TiN films that are widely used as hard films to protect and increase the lifetime and performance of cutting tools or die molds. In this study, a nano-multilayered TiAlCrSiN film was deposited by cathodic arc plasma deposition. It displayed relatively good oxidation resistance at $700-900^{\circ}C$, owing to the formation protective oxides of $Al_2O_3$, $Cr_2O_3$, and $SiO_2$, and semiprotective $TiO_2$. At $1000^{\circ}C$, the increased temperature led to the formation of the imperfect oxide scale that consisted primarily of the outer ($TiO_2$,$Al_2O_3$)-mixed scale and inner ($TiO_2$, $Al_2O_3$, $Cr_2O_3$)-mixed scale.

  • PDF

Fabrication of in-situ Formed Namo-Composite Using Polymer Precursor : I. Adsorption Behavior of Polymer Followed $SiO_2$ Surface formation onto Silicon Nitride Surface (폴리머 Precursor를 이용한 in-situ 나노 복합체의 제조 : I. 질화규소 표면에서의 $SiO_2$ 피막형성에 따른 폴리머의 흡착거동)

  • 정연길;백운규
    • Journal of the Korean Ceramic Society
    • /
    • v.37 no.3
    • /
    • pp.280-287
    • /
    • 2000
  • Adsorption behavior and amount of phenolic resin followed silica (SiO2) formation onto silicon nitride(Si3N4) surface were investigated using electrokinetic sonic amplitude (ESA) technique and with UV spectrometer, to fabricate Si3N4/SiC nano-composite based on reaction between SiO2 formed and phenolic resin absorbed onto Si3N4 particle. The amount of SiO2 formed and carbon from phenolic resin absorbed onto Si3N4 surface were calculated quantitatively to adjust the reaction between SiO2 and phenolic resin, resulting in no residual SiO2 and carbon. As a result, pre-heated tempeature for optimized reaction was below 25$0^{\circ}C$, in which there was no residual SiO2 and carbon.

  • PDF

Effects of Y2O3 Addition on Densification and Thermal Conductivity of AlN Ceramics During Spark Plasma Sintering (Y2O3 첨가가 AlN 세라믹스의 방전 플라즈마 소결 거동 및 열전도도에 미치는 영향)

  • Chae, Jae-Hong;Park, Joo-Seok;Ahn, Jong-Pil;Kim, Kyoung-Hun;Lee, Byung-Ha
    • Journal of the Korean Ceramic Society
    • /
    • v.45 no.12
    • /
    • pp.827-831
    • /
    • 2008
  • Spark plasma sintering (SPS) of AlN ceramics were carried out with ${Y_2}{O_3}$ as sintering additive at a sintering temperature $1,550{\sim}1,700^{\circ}C$. The effect of ${Y_2}{O_3}$ addition on sintering behavior and thermal conductivity of AlN ceramics was studied. ${Y_2}{O_3}$ added AlN showed higher densification rate than pure AlN noticeably, but the formation of yttrium aluminates phases by the solid-state reaction of ${Y_2}{O_3}$ and ${Al_2}{O_3}$ existed on AlN surface could delay the densification during the sintering process. The thermal conductivity of AlN specimens was promoted by the addition of ${Y_2}{O_3}$ up to 3 wt% in spite of the formation of YAG secondary phase in AlN grain boundaries because ${Y_2}{O_3}$ addition could reduced the oxygen contents in AlN lattice which is primary factor of thermal conductivity. However, the thermal conductivity rather decreased over 3 wt% addition because an immoderate formation of YAG phases in grain boundary could decrease thermal conductivity by a phonon scattering surpassing the contribution of ${Y_2}{O_3}$ addition.

Formation of N2O in NH3-SCR DeNOxing Reaction with V2O5/TiO2-Based Catalysts for Fossil Fuels-Fired Power Stations (화력발전소용 V2O5/TiO2계 촉매상에서 NH3-SCR 탈질반응으로부터의 N2O 생성)

  • Kim, Moon Hyeon
    • Korean Chemical Engineering Research
    • /
    • v.51 no.2
    • /
    • pp.163-170
    • /
    • 2013
  • Selective catalytic reduction of $NO_x$ by $NH_3$ ($NH_3$-SCR) over $V_2O_5/TiO_2$-based catalysts is recently reported to be an anthropogenic emitter of $N_2O$ that is a global warming gas with a global warming potential of 310. Therefore, this review will get a touch on significance of some parameters regarding $N_2O$ formation in the $deNO_xing$ reaction for fossil fuels-fired power plants applications. The $N_2O$ production in $NH_3$-SCR reaction with such catalysts occurs via side reactions between $NO_x$ and $NH_3$ in addition to $NH_3$ oxidation, and the extent of these undesired reactions depends strongly on the loadings of $V_2O_5$ as a primary active component and the promoter as a secondary one ($WO_3$ and $MoO_3$) in the SCR catalysts, the feed and operating variables such as reaction temperature, $NO_2/NO_x$ ratio, oxygen concentration, gas hourly space velocity, water content and thermal excursion, and the physical and chemical histories of the catalysts on site. Although all these parameters are associated with the $N_2O$ formation in $deNO_xing$ reaction, details of some of them have been discussed and a better way of suppressing the $N_2O$ production in commercial SCR plants has been proposed.

The Formation of ConTiOn+2 Compounds in CoOx/TiO2 Catalysts and Their Activity for Low-Temperature CO Oxidation (CoOx/TiO2 촉매상에 ConTiOn+2 화합물의 생성과 저온 CO 산화반응에 대한 촉매활성)

  • Kim, Moon-Hyeon;Ham, Sung-Won
    • Journal of Environmental Science International
    • /
    • v.17 no.8
    • /
    • pp.933-941
    • /
    • 2008
  • The formation of $Co_nTiO_{n+2}$ compounds, i.e., $CoTiO_3$ and $CO_2TiO_4$, in a 5wt% $CoO_x/TiO_2$ catalyst after calcination at different temperatures has been characterized via scanning electron microscopy (SEM), Raman and X-ray photoelectron spectroscopy (XPS) measurements to verify our earlier model associated with $CO_3O_4$ nanoparticles present in the catalyst, and laboratory-synthesized $Co_nTiO_{n+2}$ chemicals have been employed to directly measure their activity profiles for CO oxidation at $100^{\circ}C$. SEM measurements with the synthetic $CoTiO_3$ and $CO_2TiO_4$ gave the respective tetragonal and rhombohedral morphology structures, in good agreement with the earlier XRD results. Weak Raman peaks at 239, 267 and 336 $cm^{-1}$ appeared on 5wt% $CoO_x/TiO_2$ after calcination at $570^{\circ}C$ but not on the catalyst calcined at $450^{\circ}C$, and these peaks were observed for the $Co_nTiO_{n+2}$ compounds, particularly $CoTiO_3$. All samples of the two cobalt titanate possessed O ls XPS spectra comprised of strong peaks at $530.0{\pm}0.1$ eV with a shoulder at a 532.2-eV binding energy. The O ls structure at binding energies near 530.0 eV was shown for a sample of 5 wt% $CoO_x/TiO_2$, irrespective to calcination temperature. The noticeable difference between the catalyst calcined at 450 and $570^{\circ}C$ is the 532.2 eV shoulder which was indicative of the formation of the $Co_nTiO_{n+2}$ compounds in the catalyst. No long-life activity maintenance of the synthetic $Co_nTiO_{n+2}$ compounds for CO oxidation at $100^{\circ}C$ was a good vehicle to strongly sup port the reason why the supported $CoO_x$ catalyst after calcination at $570^{\circ}C$ had been practically inactive for the oxidation reaction in our previous study; consequently, the earlier proposed model for the $CO_3O_4$ nanoparticles existing with the catalyst following calcination at different temperatures is very consistent with the characterization results and activity measurements with the cobalt titanates.

Geology and Mineral Resources of the Okchǒn Zone-The Boundary between the Okchǒn and Chosǒn Systems in the South of Jechǒn, and the Geology in its Vicinity- (옥천대(沃川帶)의 지질(地質) 및 광물자원(鑛物資源)에 관(關)한 연구(硏究) -제천남부(堤川南部)의 옥천계(沃川系)의 조선계(朝鮮系)의 경계(境界) 및 부근(附近)의 지질(地質)-)

  • Kim, Ok Joon;Min, Kyung Duck;Kim, Kyu Han
    • Economic and Environmental Geology
    • /
    • v.19 no.3
    • /
    • pp.225-230
    • /
    • 1986
  • Various interpretations on the boundary between the $Okch{\check{o}}n$ system and the Great Limestone series of the $Chos{\check{o}}n$ system, and on the geologic structure and stratigraphy of the $Okch{\check{o}}n$ system have been yielded by the previous studies, and they are still in hot debate. The present work has mainly studied on the boundary between the $Okch{\check{o}}n$ and $Chos{\check{o}}n$ systems in the south of $Jech{\check{o}}n$, and the geology in its vicinity to clarify the previous misinterpretations if any on the geologic structure and in trun stratigraphy of the area concerned. The boundary between the $Okch{\check{o}}n$ system and the Great Limestone series of the $Chos{\check{o}}n$ system has been thought to be (1) gradational relation which means two systems are the same formation, (2) unconformable relation in which the $Okch{\check{o}}n$ system overlies the $Chos{\check{o}}n$ system, (3) unconformable relation in which the $Chos{\check{o}}n$ system overlies the Okchon system indicating that the age of the $Okch{\check{o}}n$ system is Precambrian, and (4) fault contact in which the $Okch{\check{o}}n$ system of Precambrian age comes in contact with the $Chos{\check{o}}n$ system of Cambro-Ordovician age. The present study clearly found that the relationship between the two systems is a fault zone contact. Shear zone of a width of 300 to 400m is developed, and andesitic volcanics and basic dikes are intruded along the fault zone. This fault contact is exactly the north extension of the Bonghwajae fault, which was denominated long time ago by two of the present authors. The eastern side of the fault has been uplifted so that the $S{\check{o}}changri$ formation of the $Okch{\check{o}}n$ system cropped out in the zone of the Great Limestone series. All the previous workers thought that the $S{\check{o}}changri$ formation rests on the Great Limestone series, but the present study found an overthrust having a strike of $N8^{\circ}E$ and dip of $30^{\circ}NW$ between them, and the $S{\check{o}}changri$ formation has thrusted over the Great Limestone series at the central part of the study area. In the southern and northern parts of this uplifted $S{\check{o}}changri$ formation, the Great Limestone series rests unconformably on it. In the eastern part of the study area where the Mt. Dangdu is located and the previous workers thought that the $S{\check{o}}changri$ formation rests on the Great Limestone series, Precambrian basement rock whose age is older than 1720+50 m.y. crops out in the northern part of the east-west trending high angle fault, and the Great Limestone series rests unconformably on the basement.

  • PDF

High-temperature Corrosion of CrAlSiN Films in Ar/1%SO2 Gas

  • Lee, Dong Bok;Xiao, Xiao;Hahn, Junhee;Son, Sewon;Yuke, Shi
    • Journal of the Korean institute of surface engineering
    • /
    • v.52 no.5
    • /
    • pp.246-250
    • /
    • 2019
  • Nano-multilayered $Cr_{25.2}Al_{19.5}Si_{4.7}N_{50.5}$ films were deposited on the steel substrate by cathodic arc plasma deposition. They were corroded at $900^{\circ}C$ in $Ar/1%SO_2$ gas in order to study their corrosion behavior in sulfidizing/oxidizing environments. Despite the presence of sulfur in the gaseous environment, the corrosion was governed by oxidation, leading to formation of protective oxides such as $Cr_2O_3$ and ${\alpha}-Al_2O_3$, where Si was dissolved. Iron diffused outward from the substrate to the film surface, and oxidized to $Fe_2O_3$ and $Fe_3O_4$. The films were corrosion-resistant up to 150 h owing to the formation of thin ($Cr_2O_3$ and/or ${\alpha}-Al_2O_3$)-rich oxide layers. However, they failed when corroded at $900^{\circ}C$ for 300 h, resulting in the formation of layered oxide scales due to not only outward diffusion of Cr, Al, Si, Fe and N, but also inward movement of sulfur and oxygen.

Effect of B2O3 Additives on GaN Powder Synthesis from GaOOH (GaOOH로부터 GaN 분말의 합성에 미치는 B2O3의 첨가효과)

  • Song, Changho;Shin, Dongwhee;Byun, Changsob;Kim, Seontai
    • Korean Journal of Materials Research
    • /
    • v.23 no.2
    • /
    • pp.104-111
    • /
    • 2013
  • In this study, GaN powders were synthesized from gallium oxide-hydroxide (GaOOH) through an ammonification process in an $NH_3$ flow with the variation of $B_2O_3$ additives within a temperature range of $300-1050^{\circ}C$. The additive effect of $B_2O_3$ on the hexagonal phase GaN powder synthesis route was examined by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Fourier transformation infrared transmission (FTIR) spectroscopy. With increasing the mol% of $B_2O_3$ additive in the GaOOH precursor powder, the transition temperature and the activation energy for GaN powder formation increased while the GaN synthesis limit-time ($t_c$) shortened. The XPS results showed that Boron compounds of $B_2O_3$ and BN coexisted in the synthesized GaN powders. From the FTIR spectra, we were able to confirm that the GaN powder consisted of an amorphous or cubic phase $B_2O_3$ due to bond formation between B and O and the amorphous phase BN due to B-N bonds. The GaN powder synthesized from GaOOH and $B_2O_3$ mixed powder by an ammonification route through ${\beta}-Ga_2O_3$ intermediate state. During the ammonification process, boron compounds of $B_2O_3$ and BN coated ${\beta}-Ga_2O_3$ and GaN particles limited further nitridation processes.

Dependence of the Formation of $TiO_{2\pm}{\delta}$ Films on Plasma Process Variables (플라즈마 공정 변수가 $TiO_{2\pm}{\delta}$ 박막 형성에 미치는 영향)

  • Park, Sang-Gi;Gang, Bong-Ju;Lee, Won-Hui;Lee, Jae-Gap
    • Korean Journal of Materials Research
    • /
    • v.10 no.11
    • /
    • pp.732-737
    • /
    • 2000
  • Plasma enhanced chemical vapor deposition of $TiO_{2$\pm}{\delta}$ has been carried out using TEMAT [tetrakis(ethylmethylamido) titanium] and $H_2$. Increasing the power from 300 W to 500 W produced the high density plasma, leading to the formation of TiO$_2$films with an increased ratio of Ti to O and a negligible amount of C and N. Applying the bias of 30W to the substrate in creased the growth rate of the film with a slightly increased content of Ti in the film. In addition, $H_2O$ was from either the residual gas in the gase pressure or $H_2(/He)$ gas and actively participated in the formation of $TiO_2$ films. Consequently, Ti ions created in the plasma could be a main contributor to $TiO_2$ formation with a slight amount of $H_2O(~10^{-4}Toor)$ in the ambient, which provided the dissociation of TEMAT.

  • PDF