• Title/Summary/Keyword: $N_2:O_2$ Mixture Gas

Search Result 172, Processing Time 0.027 seconds

The etch characteristics of TiN thin films using in $CH_4$/Ar plasma ($CH_4$/Ar 플라즈마를 이용한 TiN 박막의 식각특성 연구)

  • Woo, Jong-Chang;Um, Doo-Seung;Kim, Gwan-Ha;Kim, Dong-Pyo;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.06a
    • /
    • pp.247-248
    • /
    • 2008
  • The etching characteristics of Titanium Nitride (TiN) and etch selectivity of TiN to $SiO_2$ and $HfO_2$ in $CH_4$/Ar plasma were investigated. It was found that TiN etch rate shows a non-monotonic behavior with increasing both Ar fraction in $CH_4$ plasma, RF power, and gas pressure. The maximum TiN etch rate of nm/min was obtained for $CH_4$ (80%)/Ar(20%) gas mixture. The plasmas were characterized using optical emission spectroscopy (OES) analysis measurements. From these data, the suggestions on the TiN etch characteristics were made.

  • PDF

Magnetic Properties of Spin Valve Ta Underlayer Depending on N2 Concentration and Annealing Temperature (스핀 밸브 Ta 하지층의 질소함유량 변화와 열처리 온도에 따른 자기적 특성)

  • Choi, Yeon-Bong;Kim, Ji-Won;Jo, Soon-Chul;Lee, Chang-Woo
    • Journal of the Korean Magnetics Society
    • /
    • v.15 no.4
    • /
    • pp.226-230
    • /
    • 2005
  • In this research, magnetic properties and annealing effects of the spin valve structures were investigated, which have Ta underlayer deposited with Ar and $N_2$ gas mixture. Also, TaN underlayer as a diffusion barrier and the substrate were investigated. The structure of the spin valve was Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta. Deposition rate was decreased and resistivity and roughness of the TaN films were increased as the $N_2$ gas flow was increased. The XRD results after high temperature annealing showed that Silicides were created in Si/Ta layer, but not in Si/TaN layer. Magnetoresistance ratio (MR) and exchange coupling field ($H_{ex}$) were decreased when the $N_2$ gas flow was increased over 4.0 sccm. The MR of the spin valves with Ta and TaN films deposited with up to 4.0 sccm of $N_2$ gas flow was increased about $0.5\%$ until the annealing temperature of up to $200^{\circ}C$ and then, decreased. TaN film deposited with 8.0 sccm of $N_2$ gas flow showed twice the adhesion of the Ta film. The above results indicate that with 3.0 sccm of $N_2$ gas flow during the Ta underlayer deposition, the magnetic properties of the spin valves are maintained, while the underlayer may be used as a diffusion barrier and the adhesion between the Si substrate and the underlayer is increased.

Effect of Oxygen Mixture Ratio on the Properties of ZnO Thin-Films and n-ZnO/p-Si Heterojunction Diode Prepared by RF Sputtering (산소 혼합 비율에 따른 RF 스퍼터링 ZnO 박막과 n-ZnO/p-Si 이종접합 다이오드의 특성)

  • Gwon, Iksun;Kim, Danbi;Kim, Yewon;Yeon, Eungbum;Kim, Seontai
    • Korean Journal of Materials Research
    • /
    • v.29 no.7
    • /
    • pp.456-462
    • /
    • 2019
  • ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

Effect of Diluents and Oxygen-Enrichness on the Stability of Nonpremixed Flame (산소부화와 희석제에 따른 비예혼합 화염의 안정성)

  • 배정락;이병준
    • Transactions of the Korean Society of Mechanical Engineers B
    • /
    • v.26 no.10
    • /
    • pp.1458-1464
    • /
    • 2002
  • $CO_2$ is well known greenhouse gas which is the major source of global warming. Reducing $CO_2$ emission in combustion process can be achieved by increasing combustion efficiency, oxygen enriched combustion and recirculation of the emitted $CO_2$ gas. Stability of non-premixed flame in oxygen enriched environment will be affected by the amount of oxygen, kind of diluents and fuel exit velocity. The effects of these parameters on flame liftoff and blowout are studied experimentally oxidizer coflowing burner. Experiments were divided into three cases according as where $CO_2$gas was supplied. - 1) to coflowing air, 2) to fuel with 0$_2$-$N_2$ coflow, 3) to coflowing oxygen. Flame in air coflowing case was lifted in turbulent region. Flame lift and blowout in laminar region with the increase in $CO_2$ volume fraction in $CO_2$-Air mixture makes flame lift and blowout in laminar region. Increase in oxygen volume fraction makes flame stable-i.e. flame liftoff and blowout occur at higher fuel flowrates. Liftoff height was non-linear function of nozzle exit velocity and affected by the $O_2$ volume fraction. It was found that the flame in $O_2$-$N_2$ coflow case was more stable than $O_2$-$CO_2$ case, Liftoff heights vs (nozzle exit velocity/laminar burning velocity)$^{3.8}$ has a good correlation in $O_2$-$CO_2$ oxidizer case.

An experimental study on $NO-NO_2$ conversion characteristics and oxidation of soot by corona discharge (코로나방전에 의한 $NO_2$ 전환특성 및 soot 산화에 관한 연구)

  • Park, Yong-Seong;Chun, Kwang-Min;Park, Kwang-Seo;Lee, Jong-Hyun;Cho, Seong-Woo
    • 한국연소학회:학술대회논문집
    • /
    • 2001.11a
    • /
    • pp.179-184
    • /
    • 2001
  • The characteristics of $NO-NO_2$ conversion and soot oxidation by corona discharge are investigated experimentally. The discharge current decreases with the increase of oxygen concentration and it increases more sharply for anode corona than for cathode corona as discharge voltage increases after corona onset voltage. $NO-NO_2$ conversion increases with the energy density of corona discharge and the addition of $O_2$ in a base $N_2$ gas. Soot oxidation occurs at approximately $480^{\circ}C$ in a mixture of 21% $O_2$, base $N_2$ gas, and enhances as temperature increases. The initiation temperature of soot oxidation advances greatly to about $280^{\circ}C$ with the addition of 300ppm $NO_2$, which is generated from the conversion of NO to $NO_2$ by corona discharge. CO is generated at higher temperature by about $50{\sim}100^{\circ}C$ than $CO_2$ in the process of soot oxidation.

  • PDF

Fuel-Rich Combustion Characteristic of a Combined Gas Generator (혼합식 가스발생기의 연료과농 연소특성)

  • Lee, Dongeun;Lee, Changjin
    • Journal of the Korean Society for Aeronautical & Space Sciences
    • /
    • v.43 no.7
    • /
    • pp.593-600
    • /
    • 2015
  • In this study, a combined hybrid rocket system is newly introduced which has characteristics of both gas generators and afterburner type hybrid rockets. In particular, a combined gas generator utilizing solid fuel and liquid/gas oxidizer was designed as a primary combustor of the system. Combustion tests were carried out with various equivalence ratio affected by parameters such as fuel length, oxidizer flow rate, fuel port diameter and fuel type. In general, fuel-rich gas generator produces low combustion gas temperature to meet the temperature requirement and the target temperature was transiently set less than 1600 K. Since it was found that controlling parameters showed limited effects on the change of equivalence ratio, mixture of $O_2$ and $N_2$ as an oxidizer was additionally introduced. As a result, a combined gas generator successfully produced combustion gas temperature of less than 1600 K Future studies will carry out more combustion tests to attain fuel-rich combustion gas temperature less than 1200 K, which was a temperature requirement of a gas generator system in the previous studies.

TiN Surface-Alloying of Ti-6Al-4V Alloy by CO2 Laser (CO2 레이저에 의한 Ti-6Al-4V 합금(合金)의 TiN 표면합금화(表面合金化))

  • Park, S.D.;Lee, O.Y.;Song, K.H.
    • Journal of the Korean Society for Heat Treatment
    • /
    • v.8 no.1
    • /
    • pp.32-43
    • /
    • 1995
  • Ti-6Al-4V alloy are widely used in chemical and aircraft industries for their good corrosion resistance and high strength to weight ratio. Surface alloying of Ti alloy by $CO_2$ laser is able to produce few hundred micrometers thick TiN surface-alloyed layer with high hardness on the substrate very simplely by injecting reaction gas($N_2$) into a laser-generated melt pool and adjust the hardness to the specific requirements of the individual application by changing of laser processing parameters. This research has been investigated the effect of such parameters on TiN surface-alloying of Ti-6Al-4V alloy by $CO_2$ laser. The maximum hardness of TiN surface-alloyed zone waw obtained by injecting 100% $N_2$ gas and it was decreased as the amount of $N_2$ gas in Ar and $N_2$ gas mixture was decreased. As scanning speed was increased, the hardness and depth of TiN surface-alloyed zone was decreased at constant laser power. The surface hardness after double scanning laser treatment is higher than that of single scanning. At constant laser power, the surface roughness is increased after the surface alloying if laser scanning speed is decreased.

  • PDF

Surface discharge Characteristics for solid dielectric under non-uniform field (불평등전계 하의 고체절연물 연면방전특성)

  • Park, He-Rie;Lee, Jung-Hwan;Choi, Eun-Hyuck;Park, Sung-Gyu;Kim, Lee-Kook;Kim, Ki-Chae;Lee, Kwang-Sik
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
    • /
    • 2009.05a
    • /
    • pp.270-272
    • /
    • 2009
  • This paper presents a basic data of the surface discharge characteristics for solid dielectric under non-uniform field in $N_2/O_2$ mixture gas. Used electrodes are needle and plane. Used solid dielectric is expoxy resin. With the variation of the mixture rates of the gas by 80[%]:20[%], 60[%]:40[%] and 40[%]:60[%] in same condition, we can obtain different surface dielectric strength. Increased Pressure and thickness caused increased surface dielectric strength.

  • PDF

Effect of Gas Sparging on Sonochemical Oxidation in a 300 kHz Sonoreactor (300 kHz 조건에서의 초음파화학적 산화반응에 대한 연속식 가스 주입 효과)

  • Seo, Jieun;Son, Younggyu
    • Journal of Korean Society on Water Environment
    • /
    • v.34 no.6
    • /
    • pp.642-649
    • /
    • 2018
  • The effect of gas sparging on sonochemical oxidation was investigated in a 300 kHz sonoreactor under various liquid height/volume conditions ($5{\sim}30{\lambda}$, 3.4 ~ 9.0 L), determined by the wavelength of the applied frequency. The electrical input power was maintained constant for all cases . Sonochemical activity drastically decreased from $15{\lambda}$ and the liquid height of $10{\lambda}$ was suggested as the optimal height for 300 kHz without gas sparging. In our previous research, the sonochemical activity observed was five-times higher when air sparging was applied for 36 kHz. On the other hand, no enhancement was obtained at 10, 15, 25 and $30{\lambda}$ using air sparging (1, 3, and 6 L/min) for 300 kHz in this study $20{\lambda}$ and optimization of gas sparging was conducted at $20{\lambda}$ using various gases including air, Ar, $O_2$, $N_2$, and mixtures of Ar and $O_2$. It was found that gas sparging using pure Ar or pure $O_2$ resulted in lower sonochemical activity compared to that of air sparging due to the imbalance between the intensity of cavitation phenomena and the generation of oxidizing radical species. Consequently, the gas mixture of $Ar:O_2$ = 80 % : 20 % (DO saturation ${\approx}100%$) was suggested as an optimal gas sparging condition.

Molecular Emission Spectrometric Detection of Low Level Sulfur Using Hollow Cathode Glow Discharge

  • Koo, Il-Gyo;Lee, Woong-Moo
    • Bulletin of the Korean Chemical Society
    • /
    • v.25 no.1
    • /
    • pp.73-78
    • /
    • 2004
  • A highly sensitive detecting method has been developed for determining part per billion of sulfur in $H_2S$/Ar plasma. The method is based on the excitation of Ar/$H_2S\;or\;Ar/H_2S/O_2$ mixture in hollow cathode glow discharge sustained by radiofrequency (RF) or 60 Hz AC power and the spectroscopic measurement of the intensity of emission lines from electronically excited $S_2^*\;or\;SO_2^*$ species, respectively. The RF or AC power needed for the excitation did not exceed 30 W at a gas pressure maintained at several mbar. The emission intensity from the $SO_2^*$ species showed excellent linear response to the sulfur concentration ranging from 5 ppbv, which correspond to S/N = 5, to 500 ppbv. But the intensity from the $S_2^*$ species showed a linear response to the $H_2S$ only at low flow rate under 20 sccm (mL/min) of the sample gas. Separate experiments using $SO_2$ gas as the source of sulfur demonstrated that the presence of $O_2$ in the argon plasma is essential for obtaining prominent $SO_2^*$ emission lines.