Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The etch characteristics of TiN thin films using in $CH_4$/Ar plasma

$CH_4$/Ar 플라즈마를 이용한 TiN 박막의 식각특성 연구

  • Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Um, Doo-Seung (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Gwan-Ha (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Dong-Pyo (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
  • 우종창 (중앙대학교 전자전기공학부) ;
  • 엄두승 (중앙대학교 전자전기공학부) ;
  • 김관하 (중앙대학교 전자전기공학부) ;
  • 김동표 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Published : 2008.06.19
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Abstract

The etching characteristics of Titanium Nitride (TiN) and etch selectivity of TiN to $SiO_2$ and $HfO_2$ in $CH_4$/Ar plasma were investigated. It was found that TiN etch rate shows a non-monotonic behavior with increasing both Ar fraction in $CH_4$ plasma, RF power, and gas pressure. The maximum TiN etch rate of nm/min was obtained for $CH_4$ (80%)/Ar(20%) gas mixture. The plasmas were characterized using optical emission spectroscopy (OES) analysis measurements. From these data, the suggestions on the TiN etch characteristics were made.

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