• Title/Summary/Keyword: $N_2:O_2$ Mixture Gas

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The investigation on the Ignition Delay of n-heptane/n-butanol Blend Fuel using a Rapid Compression Machine at Low Temperature Combustion Regime (저온연소조건에서 급속압축기를 이용한 n-heptane/n-butanol 혼합연료의 착화지연에 관한 연구)

  • Song, Jaehyeok;Kang, Kijoong;Yang, Zheng;Lu, Xingcai;Choi, Gyungmin;Kim, Duckjool
    • 한국연소학회:학술대회논문집
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    • 2013.06a
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    • pp.25-28
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    • 2013
  • This study presents both experimental and numerical investigation of ignition characteristics of n-heptane and n-butanol mixture. The $O_2$ concentration was fixed to 9-10% to make high exhaust gas recirculation(EGR) rate condition. Experiments were performed using a rapid compression machine. In addition, a numerical study of the ignition delay time was performed using CHEMKIN codes to validate experimental results and predict chemical species after combustion process. The results showed that the ignition delay time increased with increasing n-butanol ratio and the reactivity decreased by low $O_2$ concentration.

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Preparation of Precision Thin Film Resistor Sputtered by Magnetron Sputtering (IC용 초정밀 박막저항소자의 제조와 특성연구)

  • Ha, H.J.;Jang, D.J.;Moon, S.R.;Park, C.S.;Cho, J.S.;Park, C.H.
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1236-1238
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    • 1994
  • TiAlN thin films were prepared by a multi target r.f magnetron sputtering system under different conditions. We have investigated the resistivity and T.C.R. (Temperature Coefficient of Resistance) characteristics of TiAlN films deposited on $Al_2O_3$ and glass substrates by sputtering in an $Ar:N_2$ gas mixture. We used Al and Ti metal as Target Material and $Ar:N_2$ gas as working gas. We varied the partial pressure ratio of $N_2/Ar$ from 0.2/7 to 1.0/6.2 (SCCM). And the R.F power of Ti and Al Target also were varied as 160/240, 200/200 and 240/160(W). In this experiment, we can get the precision thin film resistor with a very low T.C.R. (Temperature Coefficient of Resistance) below 25 ppm ${\Omega}/^{\circ}C$.

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Effect of Ozone Injection into Exhaust Gas on Catalytic Reduction of Nitrogen Oxides (촉매 공정의 배기가스 질소산화물 저감 성능에 미치는 오존주입의 영향)

  • Yun, Eun-Young;Mok, Young-Sun;Shin, Dong-Nam;Koh, Dong-Jun;Kim, Kyong-Tae
    • Journal of Korean Society of Environmental Engineers
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    • v.27 no.3
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    • pp.330-336
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    • 2005
  • The ozone injection method was proposed to improve the catalytic process for the removal of nitrogen oxides ($NO_x$). Nitric oxide (NO) in the exhaust gas was first oxidized to nitrogen dioxide ($NO_2$) by ozone produced by dielectric barrier discharge, and then the exhaust gas containing the mixture of NO and $NO_2$ was directed to the catalytic reactor where both NO and $NO_2$ were reduced to $N_2$ in the presence of ammonia as the reducing agent. A commercially available $V_2O_5-WO_3/TiO_2$ catalyst was used as the catalytic reactor. The $NO_2$ content in the mixture of NO and $NO_2$ was changed by the amount of ozone added the exhaust gas. The effect of reaction temperature, initial $NO_x$ concentration, feed gas flow rate, and ammonia concentration on the removal of $NO_x$ at various $NO_2$ contents was examined and discussed. The increase in the content of $NO_2$ by the ozone injection remarkably improved the performance of the catalytic reactor, especially at low temperatures. The present ozone injection method appears to be promising for the improvement of the catalytic reduction of $NO_x$.

Low-Temperature Growth of N-doped SiO2 Layer Using Inductively-Coupled Plasma Oxidation and Its Effect on the Characteristics of Thin Film Transistors (플라즈마 산화방법을 이용한 질소가 첨가된 실리콘 산화막의 제조와 산화막 내의 질소가 박막트랜지스터의 특성에 미치는 영향)

  • Kim, Bo-Hyun;Lee, Seung-Ryul;Ahn, Kyung-Min;Kang, Seung-Mo;Yang, Yong-Ho;Ahn, Byung-Tae
    • Korean Journal of Materials Research
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    • v.19 no.1
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    • pp.37-43
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    • 2009
  • Silicon dioxide as gate dielectrics was grown at $400^{\circ}C$ on a polycrystalline Si substrate by inductively coupled plasma oxidation using a mixture of $O_2$ and $N_2O$ to improve the performance of polycrystalline Si thin film transistors. In conventional high-temperature $N_2O$ annealing, nitrogen can be supplied to the $Si/SiO_2$ interface because a NO molecule can diffuse through the oxide. However, it was found that nitrogen cannot be supplied to the Si/$SiO_2$ interface by plasma oxidation as the $N_2O$ molecule is broken in the plasma and because a dense Si-N bond is formed at the $SiO_2$ surface, preventing further diffusion of nitrogen into the oxide. Nitrogen was added to the $Si/SiO_2$ interface by the plasma oxidation of mixtures of $O_2/N_2O$ gas, leading to an enhancement of the field effect mobility of polycrystalline Si TFTs due to the reduction in the number of trap densities at the interface and at the Si grain boundaries due to nitrogen passivation.

Analysis of Gases in Nuclear Fuel Rod by Quadrupole Mass Spectrometry (Quadrupole Mass Spectrometry를 이용한 핵연료봉내 기체분석)

  • Kim, Seung-Soo;Kang, Moon-Ja;Park, Soon-Dal;Park, Yong-Joon;Joe, Kih-Soo
    • Analytical Science and Technology
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    • v.12 no.2
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    • pp.94-98
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    • 1999
  • An analysis method of components and isotopic compositions of low pressure gases from nuclear fuel rod using quadrupole mass spectrometer was studied. The calibration curves of each gas in pure and mixtures of He, $N_2$, $O_2$, Ar, Kr and Xe were obtained as a function of pressure and concentration, respectively. Effect of molecular leak, located between sample chamber and analyser chamber, on the sensitivites was also studied. The results suggested that samples could be analysed accurately at the same analytical condition as that of synthetic gas mixture. The difference of sensitivities among isotopes of Kr and Xe was not observed in the range of measured pressure.

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Preparation of p-type transparent conducting $CuGaO_2$ thin film by DC/RF sputtering (DC-RF 스퍼터링에 의한 p형 투명 전도성 $CuGaO_2$ 박막의 제조)

  • Park, Hyun-Jun;Kwak, Chang-Gon;Kim, Sei-Ki;Ji, Mi-Jung;Lee, Mi-Jae;Choi, Byung-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.48-48
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    • 2007
  • P-type transparent conducting $CuGaO_2$ thin films have been prepared by DC/RF sputtering using Quartz(0001) and sapphire(0001) substrates. The target was fabricated by heating a stoichiometric mixture of CuO and $Ga_2O_3$ at 1373K for 12h under $N_2$ atmosphere. The film were deposited under mixture gas of Ar and $O_2(Ar:O_2=4:1)$ during 10~30min. and the as-deposited films were annealed at 1123K and $N_2$ atmosphere. Room temperature conductivity and the activation energy of the sintered body in the temperature range of 223K ~ 423K were 0 004S/cm, 1.9eV, respectively. XRD revealed that all of the as-deposited films were amorphous. Heating of the films deposited on Quartz substrates above 1123K resulted in crystallization with a second phase of $CuSiO_3$, which was assumed owing to reaction with Quartz substrate. The single phase of $CuGaO_2$ was obtained at the film deposited on the sapphire substrates. The transmittance after annealing of DC- and RF-sputtered films were 55~75% at 550nm. From the transmittance and reflectance measurement. the direct band gap of the DC/RF-sputtered films were 3.63eV and 3.57eV. and there was little difference between DC and RF sputtered films.

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Synthesis of $WS_2$ Solid Lubricant ($WS_2$ 고체 윤활제의 합성)

  • 신동우;윤대현;황영주;김성진;김인섭
    • Tribology and Lubricants
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    • v.13 no.4
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    • pp.60-65
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    • 1997
  • The tungsten disulfide $(WS_2)$ solid lubricant was synthesized by two different reaction processes, i.e., the reaction between $CS_2$ gas phase and solid $WO_3$powder, and the vapour phase transport method of tungsten and sulfur in a high vacuum. The chemical and physical characteristics of synthesized $WS_2$powder were analyzed in terms of the average particle size, morphology, crystalline phase etc. in comparison with those of commercial $WS_2$powder. The solid $WO_3$ powder with the average size of 0.2 ${\mu}{\textrm}{m}$ was reacted with $CS_2$gas flowed with$N_2$or 96%$N_2{\times}4%H_2$forming gas for 36 h and 24 h at 90$0^{\circ}C$ respectively. $WS_2$ crystalline phase was then formed through the intermediate phase of .$W_{20}O_{58}$ In the case of vapour phase transport method, the 3.5 wt% iodine was added as a vapour transport reagent into the composition of tungsten and sulfur powders maintaining a constant molar ratio of W:S=1:2.2. The mixture was then heat treated at 85$0^{\circ}C$ for 2 weeks in vacuum. The reaction product obtained showed the average size of 12 ${\mu}{\textrm}{m}$ and the hexagonal plate shape of typical solid lubricant with 2H-$WS_2$crystalline phase.

Eu$^{2+}$ Activated Green Phosphor $Ba_2CaMgSi_2O_8:Eu^{2+}$

  • Kim, Jeong-Seog;Piao, Ji Zhe;Choi, Jin-Ho;Cheon, Chae-Il
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.1076-1078
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    • 2004
  • In this paper, we report $Eu^{2+}$ activated green phosphor $Ba_2CaMgSi_2O_8:Eu^{2+}$. This phosphor absorbs ultroviolet radation and emits a green visible light. The phosphors were synthesized by conventional solid state reaction method. Reagent grade $BaCO_3$, $CaCO_3$, MgO, $SiO_2$, $Eu_2O_3$ were used as raw materials. The raw materials were mixed thoroughly with an appropriate amount of ethanol in an agate mortar and then dried at 90 $^{\circ}C$ for 2 hours. The mixture was sintered at 900 $^{\circ}C$ for 2 hours and reheated at the mild reducing atmosphere 5% $H_2$ gas mixed with 95% $N_2$ gas at about 900 $^{\circ}C$ to 1250 $^{\circ}C$ for 2 hours. The photoluminescence spectra of the phosphor powders were measured by a fluorescent spectrophotometer. The crystal structure of phosphor powders were investigated by X-ray diffractometer.

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$EU^{2+}$ Activated Green Phosphor $Ba_{2}CaMgSi_{2}O_{8}:Eu^{2+}$

  • Kim, Jeong-Seog;Piao, Ji-Zhe;Choi, Jin-Ho;Cheon, Chae-Il;Park, Joo-Suk
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2004.05a
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    • pp.97-100
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    • 2004
  • We report $EU^{2+}$ activated green phosphor $Ba_{2}CaMgSi_{2}O_{8}:Eu^{2+}$. The phosphor absorbs ultroviolet radation and emits a green visible light. The phosphors were synthesized by conventional solid state reaction method. The high purity $BaCO_3$, $CaCO_3$, MgO, $SiO_2$, $Eu_{2}O_{3}$ were used as raw materials. The raw materials were mixed thoroughly with an appropriate amount of ethanol in an agate mortar and then dried at $90^{\circ}C$ for 2 hours. The mixture was sintered at $900^{\circ}C$ for 2 hours and reheated at the mild reducing atmosphere 5% $H_2$ gas mixed with 95% $N_2$ gas at about $900^{\circ}C$ to $1200^{\circ}C$ for 2 hours. The photoluminescence spectra of the phosphor powders were measured by a fluorescent spectrophotometer. The crystal structure of phosphor powders were investigated by X -ray diffractometer.

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Study on Regrouping of Gray Gases in spectral WSGGM for Arbitrary Mixtures of CO2 and H2O Gases (이산화탄소-수증기 혼합가스에 대한 파장별 회색가스가중합법에서 회색가스재조합에 대한 연구)

  • Park, Won-Hee;Kim, Tae-Kuk
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.27 no.2
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    • pp.227-235
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    • 2003
  • The WSGG-based narrow band model was employed to solve the radiative transfer equations along isothermal and non-isothermal paths through $CO_2-H_2O-N_2$ gas mixtures at 1 atm. When the WSGGM is applied for arbitrary gas mixtures by considering the multiplication property of transmissivity in overlapping bands, the number of gray gases is significantly increased. To reduce the computation time, three different regrouping methods for the gray gases are tested in obtaining the mean absorption coefficient for each gray gas group. Among them, the regrouping method by minimizing the regrouping error shows the best results. For the isothermal media, 10 gray gases show fairly good agreement with the results by statistical narrow band(SNB) model which are regarded as reference solutions. For non-isothermal media, 20 gray gases show good agreement with reference solutions.