• Journal of the Korean Society for Heat Treatment
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• v.14 no.2
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• pp.103-109
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• 2001

Plasma nitrocarburising and post oxidation were performed on SM45C steel using a plasma nitriding unit. Nitrocarburising was carried out with various methane gas compositions with 4 torr gas pressure at $570^{\circ}C$ for 3 hours and post oxidation was carried out with 100% oxygen gas atmosphere with 4 torr at different temperatures for various times. It was found that the compound layer produced by plasma nitrocarburising consisted of predominantly ${\varepsilon}-Fe_{2-3}(N,C)$ and a small proportion of ${\gamma}-Fe_4(N,C)$. With increasing methane content in the gas mixture, ${\varepsilon}$ phase compound layer was favoured. In addition, when the methane content was further increased, cementite was observed in the compound layer. The very thin oxide layer on top of the compound layer was obtained by post oxidation. The formation of Oxide phase was initially started from the magnetite($Fe_3O_4$) and with increasing oxidation time, the oxide phase was increased. With increasing oxidation temperature, oxide phase was increased. However the oxide layer was split from the compound layer at high temperature. Corrosion resistance was slightly influenced by oxidation times and temperatures.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.14-21
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• 2010

Ge is one of the attractive channel materials for the next generation high speed metal oxide semiconductor field effect transistors (MOSFETs) due to its higher carrier mobility than Si. But the absence of a chemically stable thermal oxide has been the main obstacle hindering the use of Ge channels in MOS devices. Especially, the fabrication of gate oxide on Ge with high quality interface is essential requirement. In this study, $HfO_xN_y$ thin films were prepared by plasma-enhanced atomic layer deposition on Ge substrate. The nitrogen was incorporated in situ during PE-ALD by using the mixture of nitrogen and oxygen plasma as a reactant. The effects of nitrogen to oxygen gas ratio were studied focusing on the improvements on the electrical and interface properties. When the nitrogen to oxygen gas flow ratio was 1, we obtained good quality with 10% EOT reduction. Additional analysis techniques including X-ray photoemission spectroscopy and high resolution transmission electron microscopy were used for chemical and microstructural analysis.

• Food Science and Preservation
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• v.6 no.2
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• pp.206-215
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• 1999

Volatile flavor components in five varieties, Bekdo, Chundo, Yumung, Daegubo and Hwangdo, of peach (Prunus persica L.) were extracted by SDE (Simultaneous steam distillation and extraction) method using the mixture of n-pentane and diethylether(1:1, v/v) as an extract solvent. Analysis of the concentrate by capillary gas chromatography and gas chromatography-mass spectrometry led to the identification of 83, 85, 70, 74 and 66 components in Bekdo, Chundo, Yumung, Daegubo and Hwangdo, respectively. Aroma patterns (29 alcohols, 27 ketones, 18 aldehydes, 9 esters, 5 ethers, 3 acids, 6 terpene and derivatives, and 26 miscellaneous) were identified and quantified in five cultivars. Ethyl acetate, hexanal, o-xylene, (E)-2-hexenal, hexanol, (E)-2-hexen-1-ol, benzaldehyde, r-decalactone and r-dodecalactone were the main components in each samples, though there were several differences in composition of volatile components. Beside C$\_$6/ compounds, a series of saturated and unsaturated r- and $\delta$-lactones ranging from chain length C$\_$6/ to C$\_$l2/, with concentration maxima for r-decalactone and r-dodecalactone, were a major class of constituents. Lactones and peroxidation products of unsaturated fatty acid (i.e. C$\_$6/ aldehydes and alcohols) were major constituents of the extract.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.230-237
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• 2021

In this study, the influence of silicon contents on the microstructure, mechanical and tribological properties of Ti-Al-Si-N coatings were systematically investigated for application of cutting tools. The composition of the Ti-Al-Si-N coatings were controlled by different combinations of TiAl₂ and Ti₄Si composite target powers using an arc ion plating technique in a reactive gas mixture of high purity Ar and N₂ during depositions. Ti-Al-Si-N films were nanocomposite consisting of nanosized (Ti,Al,Si)N crystallites embedded in an amorphous Si₃N₄/SiO₂ matrix. The instrumental analyses revealed that the synthesized Ti-Al-Si-N film with Si content of 5.63 at.% was a nanocomposites consisting of nano-sized crystallites (5-7 nm in dia.) and a three dimensional thin layer of amorphous Si₃N₄ phase. The hardness of the Ti-Al-Si-N coatings also exhibited the maximum hardness value of about 47 GPa at a silicon content of ~5.63 at.% due to the microstructural change to a nanocomposite as well as the solid-solution hardening. The coating has a low friction coefficient of 0.55 at room temperature against an Inconel alloy ball. These excellent mechanical and tribological properties of the Ti-Al-Si-N coatings could help to improve the performance of machining and cutting tool applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.24.1-24.1
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• 2009

Tantalum carbo-nitride($T_aC_xN_y$) films were deposited with chemical vapor deposition(CVD) using tert-butylimido tris-diethylamido tantalum (TBTDET, $^tBu-N=Ta-(NEt_2)_3$, $Et=C_2H_5$, $^tBu=C(CH_3)_3$) between $350^{\circ}C$ and $600^{\circ}C$ with argon as a carrier gas. Fourier transform infrared (FT-IR)spectroscopy was used to study the thermal decomposition behavior of TBTDET in the gas phase. When the temperature was increased, C-H and C-N bonding of TBTDET disappeared and the peaks of ethylene appeared above $450^{\circ}C$ in the gas phase. The growth rate and film density of $T_aC_xN_y$ film were in the range of 0.1nm/min to 1.30nm/min and of $8.92g/cm^3$ to $10.6g/cm^3$ depending on the deposition temperature. $T_aC_xN_y$ films deposited below $400^{\circ}C$ were amorphous and became polycrystal line above $500^{\circ}C$. It was confirmed that the $T_aC_xN_y$ film was a mixture of TaC, graphite, $Ta_3N_5$, TaN, and $Ta_2O_5$ phases and the oxide phase was formed from the post deposition oxygen uptake. With the increase of the deposition temperature, the TaN phase was increased over TaC and $Ta_3N_5$ and crystallinity, work function, conductivity and density of the film were increased. Also the oxygen uptake was decreased due to the increase of the film density. With the increase of the TaC phase in $T_aC_xN_y$ film, the work function was decreased to 4.25eV and with the increase of the TaN phase in $T_aC_xN_y$ film,it was increased to 4.48eV.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.10
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• pp.97-103
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• 2015

This paper presents the characteristics of partial discharge and radiated electromagnetic waves in the existence of a poor contact for the insulation diagnosis of eco-friendly power equipment. AC surface discharge experiment was conducted to simulate the poor contact between a hive voltage electrode (anode) and a solid insulator in $N_2/O_2$ mixture gas under a non-uniform field. The partial discharge voltage to be measured at 0.3MPa increased with the increase of the poor contact gap and was saturated with the gap. In addition to the partial discharge characteristics, it was verified that the defect of the poor contact can be diagnosed using the radiated electromagnetic waves due to the partial discharge, which measured by a biconical EMC antenna and a spectrum analyzer.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.414-420
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• 2001

A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.

• Transactions of the Korean Society of Automotive Engineers
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• v.9 no.4
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• pp.77-84
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• 2001

Measurements of local CO, $CO_2$, $O_2$, $N_2$, $C_3$H$_{8}$, NOx concentrations and flame temperature are made for partially premixed flame with and without acoustic excitation. The CO, $CO_2$, $O_2$, $N_2$, and $C$_3$H_8$ concentrations are determined by thermal conductivity detection (Gas-chromatograph) and NOx concentrations are determined by chemiluminescent detection (NOx analyser). To measure local sample concentration, sampling probe was made by quartz with inlet diameter of 0.25mm. In the case of excitation, the visual shape of the flame is changed from laminar flame to turbulent-like flame. The flame length is also reduced, and the flame width becomes broad. In the observation of emission concentration without acoustic excitation, meanwhile, the $CO_2$ and NOx concentrations peak at flame front where the mixture meets with surrounding air, and the CO concentration is increasing at maximum position of CO2 concentration and peaks at the centerline of the burner. In the case of acoustic excitation, the $CO_2$ concentration is widely occurred at nozzle of the burner and is higher relative to unexcitation. The CO concentration is much reduced, but NOx concentration is more increasing. And flame temperature is higher relative to unexcitation. These are caused by enhancing of mixing with surrounding air due to excitation. However, in the case of acoustic excitation, the total NOx concentration is reduced because of the shortened flame length which affects residence time.e.

• Journal of the Korean Society of Combustion
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• v.18 no.2
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• pp.32-41
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• 2013

This study presents both experimental and numerical investigation of ignition delay time of n-heptane and n-butanol binary fuel. The $O_2$ concentration in the mixture was set to 9-10% to make high exhaust gas recirculation( EGR) rate condition which leads low NOx and soot emission. Experiments were performed using a rapid compression machine(RCM) at compressed pressure 20bar, several compressed temperature and three equivalence ratios(0.4, 1.0, 1.5). In addition, a numerical study on the ignition delay time was performed using CHEMKIN codes to validate experimental results and predict chemical species in the combustion process. The results showed that the ignition delay time increased with increasing the n-butanol fraction due to a decrease of oxidation of n-heptane at the low temperature. Moreover, all of the binary fuel mixtures showed the combustion characteristics of n-heptane such as cool flame mode at low temperature and negative-temperature-coefficient(NTC) behavior. Due to the effect of high EGR rate condition, the operating region is reduced at lean condition and the ignition delay time sharply increased compared with no EGR condition.

• Progress in Superconductivity and Cryogenics
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• v.23 no.2
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• pp.1-5
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• 2021

We have investigated the electrical transport properties of polycrystalline tantalum nitride (TaN_x) films. Various compositions of tantalum (nitride) thin films have been deposited on SiO₂ substrates by reactive DC magnetron sputtering while changing the ratio of nitrogen partial pressure. The substrate temperature was maintained at 283 K during deposition. X-ray diffraction analyses indicated the presence of α-Ta and β-Ta phases in the Ta film deposited in pure argon atmosphere, while fcc-TaN_x phases appeared in the sputtering gas mixture of argon and nitrogen. The N/Ta atomic ratio in the film increased ranging from 0.36 to 1.07 for nitrogen partial pressure from 7 to 20.7%. The superconducting transition temperatures of the TaN_x thin films were measured to be greater than 3.86 K with a maximum of 5.34 K. The electrical resistivity of TaN_x thin film was in the range of 177-577 𝜇Ωcm and increased with an increase in nitrogen content. The upper critical filed at zero temperature for a TaN_0.87 thin film was estimated to exceed 11.3 T, while it showed the lowest T_c = 3.86 K among the measured superconducting TaN_x thin films. We try to explain the behavior of the increase of the residual resistivity and the upper critical field for TaN_x thin films with the nitrogen content by using the combined role of the intergrain Coulomb effect and disorder effect by grain boundaries.