• Maxillofacial Plastic and Reconstructive Surgery
• /
• v.33 no.1
• /
• pp.26-31
• /
• 2011

Purpose: Chronic inflammatory gingival lesions occur as pyogenic granulomas or non-specific chronic suppurative lesions. Methods: Of the 59 chronic inflammatory gingival lesions examined, plasma cell granuloma (n=14), which showed an intense antibody-mediated immune reaction with the increased infiltration of plasma cells, was observed as a pseudotumor-like gingival overgrowth and myofibroblastic or fibrohistiocytitc proliferation of stromal cells with a heavy collection of plasma cells. The levels of CD3, CD20, CD31, CD68, RANKL, cathepsin G, cathepsin K, lysozyme, TNF${\alpha}$, MMP-2, and MMP-9 in the 14 cases of gingival plasma cell granuloma with immunohistochemical detection were measured to determine the pathogenetic progresses of the plasma cell granuloma compared to the common pyogenic granuloma (n=45) in the gingiva. Results: The gingival lesions of the plasma cell granuloma could be divided into three histological types, plasma cell predominant type (PPT, n=8), mixed inflammatory cell type (MICT, n=2), and sclerosed fibrosis type (SFT, n=4). The PPT showed a condensed infiltration of plasma cells into the perivascular spaces of the granulomatous lesion with frequent formation of Russel's body in their cytoplasm. The MICT showed the concomitant infiltration of many macrophages together with plasma cells, resulting in the diffuse destruction of stromal fibrous tissue. The SFT showed granulomatous lesions replaced gradually by thick collagenous fibrous tissue, resembling an inflammatory pseudotumor. The SFT expressed strongly the lymphocytic markers, CD3 and CD20, and the macrophage/monocyte markers, CD31 and CD68, but showed reduced expression of common inflammatory markers, TNF${\alpha}$, cathepsin G, lysozyme, MMP-2, and MMP-9, as well as the reduced expression of osteoclastogenic markers, RANKL and cathepsin K. Conclusion: These results suggest that a gingival plasma cell granuloma shows variable gene expression for cell-mediated immunity and stromal tissue degeneration, undergoing sclerotic fibrosis with a persistent inflammatory reaction.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.391-392
• /
• 2012

In these days, the desire for the precise and tiny displays in mobile application has been increased strongly. Currently, laser displays ranging from large-size laser TV to mobile projectors, are commercially available or due to appear on the market [1]. In order to achieve a mobile projectors, the semiconductor laser diodes should be used as a laser source due to their size and weight. In this presentation, the continuous etch characteristics of Pd and AlGaN/GaN superlattice for the fabrication of blue laser diodes were investigated by using inductively coupled $CHF_3$ and $Cl_2$ -based plasma. The GaN laser diode samples were grown on the sapphire (0001) substrate using a metal organic chemical vapor deposition system. A Si-doped GaN layer was grown on the substrate, followed by growth of LD structures, including the active layers of InGaN/GaN quantum well and barriers layer, as shown in other literature [2], and the palladium was used as a p-type ohmic contact metal. The etch rate of AlGaN/GaN superlattice (2.5/2.5 nm for 100 periods) and n-GaN by using $Cl_2$ (90%)/Ar (10%) and $Cl_2$ (50%)/$CHF_3$ (50%) plasma chemistry, respectively. While when the $Cl_2$/Ar plasma were used, the etch rate of AlGaN/GaN superlattice shows a similar etch rate as that of n-GaN, the $Cl_2/CHF_3$ plasma shows decreased etch rate, compared with that of $Cl_2$/Ar plasma, especially for AlGaN/GaN superlattice. Furthermore, it was also found that the Pd which is deposited on top of the superlattice couldn't be etched with $Cl_2$/Ar plasma. It was indicating that the etching step should be separated into 2 steps for the Pd etching and the superlattice etching, respectively. The etched surface of stacked Pd/superlattice as a result of 2-step etching process including Pd etching ($Cl_2/CHF_3$) and SLs ($Cl_2$/Ar) etching, respectively. EDX results shows that the etched surface is a GaN waveguide free from the Al, indicating the SLs were fully removed by etching. Furthermore, the optical and electrical properties will be also investigated in this presentation. In summary, Pd/AlGaN/GaN SLs were successfully etched exploiting noble 2-step etching processes.

• Journal of the Korean Ceramic Society
• /
• v.48 no.1
• /
• pp.69-73
• /
• 2011

A $ZrO_2$ thin film as a corrosion protective layer was deposited on Zircaloy-4 (Z-4) clad material using $N_2O$ as a reactive gas by RF reactive magnetron sputtering at room temperature. The Z-4 substrate was located in plasma or out of plasma during the $ZrO_2$ deposition process to investigate mechanical and corrosive properties for the plasma immersion. Tetragonal and monoclinic phases were existed in $ZrO_2$ thin film immersed in plasma. We observed that a grain size of the $ZrO_2$ thin film immersed in plasma state is larger than that of the $ZrO_2$ thin film out of plasma state. In addition, the corrosive property of the $ZrO_2$ thin films in the plasma was characterized using the weight gains of Z-4 after the corrosion test. Compared with the $ZrO_2$ thin film immersed out of plasma, the weight gains of $ZrO_2$ thin film immersed in plasma were larger. These results indicate that the $ZrO_2$ film with the tetragonal phase in the $ZrO_2$ can protect the Z-4 from corrosive phenomena.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.6
• /
• pp.615-620
• /
• 1996

Chromium-Molybdenum steel was plasma-nitrided at 823 K for 10.8 ks in an atmosphere of 30% $N_2$-70% $H_2$ gas under 665 Pa without and with a subsidiary cathode of $MoS_2$ to compare ion-nitriding and plasma-sulfnitriding using subsidiary cathode. When the steel was ion-nitrided without $MoS_2$, iron nitride layer of 4$\mu\textrm{m}$ and nitrogen diffusion layer of 400mm were formed on the steel. A compound layer of 15$\mu\textrm{m}$ and nitrogen diffusion layer of 400$\mu\textrm{m}$ were formed on the surface of the steel plasma-sulfnitrided with subsidiary cathode of $MoS_2$. The compound layer consisted of FeS containing Mo and iron nitrides. The nitrides of $\varepsilon$-$Fe_2$, $_3N$ and $\gamma$-$Fe_4N$ formed under the FeS. The thicker compound layer was formed by plasma-sulfnitriding than ion-nitriding. In plasma-sulfnitriding, the surface hardness was about 730 Hv. The surface hardness of the steel plasma-sulfnitrided with $MoS_2$ was lower than that of ion-nitrided without $MoS_2$. This may be due to the soft FeS layer formed on the surface of the plasma-sulfnitrided steel.

• Korean Journal of Metals and Materials
• /
• v.47 no.11
• /
• pp.716-721
• /
• 2009

The major drive for the application of low-temperature plasma treatment in nitrocarburizing of austenitic stainless steels lies in improved surface hardness without degraded corrosion resistance. The low-temperature plasma nitrocarburizing was performed in a gas mixture of $N_{2}$, $H_{2}$, and carbon-containing gas such as $CH_{4}$ at $450^{\circ}C$. The influence of the processing time (5~30 h) and $N_{2}$ gas composition (15~35%) on the surface properties of the nitrocarburized layer was investigated. The resultant nitrocarburized layer was a dual-layer structure, which was comprised of a N-enriched layer (${\gamma}_N$) with a high nitrogen content on top of a C-enriched layer (${\gamma}_C$) with a high carbon content, leading to a significant increase in surface hardness. The surface hardness reached up to about $1050HV_{0.01}$, which is about 4 times higher than that of the untreated sample ($250HV_{0.01}$). The thickness of the hardened layer increased with increasing treatment time and $N_{2}$ gas level in the atmosphere and reached up to about $25{\mu}m$. In addition, the corrosion resistance of the treated samples without containing $Cr_{2}N$ precipitates was enhanced than that of the untreated samples due to a high concentration of N on the surface. However, longer treatment time (25% $N_{2}$, 30 h) and higher $N_{2}$ gas composition (35% $N_{2}$, 20 h) resulted in the formation of $Cr_{2}N$ precipitates in the N-enriched layer, which caused the degradation of corrosion resistance.

• Journal of the Korean institute of surface engineering
• /
• v.46 no.4
• /
• pp.168-174
• /
• 2013

In this study, low-cost, high-speed deposition, excellent processability, high mechanical strength and electrical conductivity, chemical stability and corrosion resistance of stainless steel to meet the obsessive-compulsive (0.1 mm or less) were selected CrN thin film. new price reduction to sputter deposition causes - the possibility of sublimation source for inductively coupled plasma Cr rods were attempts by DC bias. 0.6 Pa Ar inductively coupled plasmas of 2.4 MHz, 500 W, keeping Cr Rod DC bias power 30 W (900 V, 0.02 A) is applied, $N_2$ flow rate of 0.5, 1.0, 1.5 sccm by varying the characteristics of were analyzed. $N_2$ flow rate increases, decreases and $Cr_2N$, CrN was found to increase. In addition to corrosion resistance and contact resistance, corrosion resistance, electrical conductivity was evaluated. corrosion current density than $N_2$ 0 sccm was sure to rise in all, $N_2$ 1 sccm at $4.390{\times}10^{-7}$ (at 0.6 V) $A{\cdot}cm^{-2}$, respectively. electrical conductivity process results when $N_2$ 1 sccm 28.8 $m{\Omega}/cm^2$ with the lowest value of the contact resistance was confirmed that came out. The OES (SQ-2000) and QMS (CPM-300) using a reactive deposition process to add $N_2$ to maintain a uniform deposition rate was confirmed that.

• Journal of the Korean Applied Science and Technology
• /
• v.7 no.2
• /
• pp.55-61
• /
• 1990

To investigate the influence of saturated fats, ${\alpha}-linolenic$ acid, EPA and DHA on the lipid hydroperoxide concentration and fatty acid composition in liver microsomes and in plasma lipid of rabbits, the animals were fed on the perilla oil rich ${\alpha}-linolenic$ acid or sardine oil rich EPA and DHA diet for four weeks Were examined. The fatty acid composition of plasma lipid and liver microsomes of rabbits fed on the perilla oil diet was an accumulation of arachidonic acid(AA) 20:4 n-6, eicosapentaenoic acid(EPA) 20:5 n-3, and docosahexaenoic acid(DHA) 22:6 n-3, The fatty acid composition of plasma lipid and liver microsomes of rabbits fed on the sardine oil was an accumulation of ${\alpha}-linolenic$ acid(LNA) 18:3 n-3, and arachidonic acid(AA) 20:4. The p/s ratio of rabbits fed on the perilla oil diet changed from 7.4 to 2.27 for plasma lipid and 2.47 for liver microsomes. The concentration of lipid hydroperoxide was 3.48 nmol MDA/ml and 4.35 nmol MDA/ml for plasma lipid and liver microsomes, respectively, in perilla oil diet. The lipid hydroperoxide liver was 4.22 nmol MDA/ml and 67 nmol MDA/ml for plasma lipid and liver microsornes in sardine oil diet.

• Korean Journal of Materials Research
• /
• v.19 no.1
• /
• pp.37-43
• /
• 2009

Silicon dioxide as gate dielectrics was grown at $400^{\circ}C$ on a polycrystalline Si substrate by inductively coupled plasma oxidation using a mixture of $O_2$ and $N_2O$ to improve the performance of polycrystalline Si thin film transistors. In conventional high-temperature $N_2O$ annealing, nitrogen can be supplied to the $Si/SiO_2$ interface because a NO molecule can diffuse through the oxide. However, it was found that nitrogen cannot be supplied to the Si/$SiO_2$ interface by plasma oxidation as the $N_2O$ molecule is broken in the plasma and because a dense Si-N bond is formed at the $SiO_2$ surface, preventing further diffusion of nitrogen into the oxide. Nitrogen was added to the $Si/SiO_2$ interface by the plasma oxidation of mixtures of $O_2/N_2O$ gas, leading to an enhancement of the field effect mobility of polycrystalline Si TFTs due to the reduction in the number of trap densities at the interface and at the Si grain boundaries due to nitrogen passivation.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.7
• /
• pp.2309-2314
• /
• 2012

Ag deposited N-$TiO_2$ composite nanoparticles were prepared via $NH_3$ plasma treatment. X-ray diffraction, UV-vis spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy were used to characterize the prepared $TiO_2$ samples. The plasma treatment did not change the phase composition and particle sizes of $TiO_2$ samples, but extended its absorption edges to the visible light region. The photocatalytic activities were tested in the degradation of an aqueous solution of a reactive dyestuff, methylene blue, under visible light. The photocatalytic activities of Ag deposited N-$TiO_2$ composite nanoparticles were much higher than Ag-$TiO_2$, N-$TiO_2$, and P25. A possible mechanism for the photocatalysis was proposed.

• Korean Journal of Materials Research
• /
• v.27 no.12
• /
• pp.699-704
• /
• 2017

Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after $N_2$ plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, $N_2$ plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with $N_2$ plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from $Al_2O_3$ to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface $N_2$ plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.