• Journal of the Korean Vacuum Society
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• 제19권1호
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• pp.58-65
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• 2010

AlN thin films were deposited on sapphire substrates and ZnO templates by rf-magnetron sputtering. Powder-sintered AlN target was adopted for source material. Thickness of AlN layer was linearly dependent on plasma power from 50 to 110 W, and it decreased slightly when working pressure increased from 3 to 10 mTorr due to short mean free path of source material sputtered from AlN target by Ar working gas. When $N_2$ gas was mixed with Ar, the thickness of AlN layer decreased significantly because of low sputter yield of nitrogen. AlN layer was also deposited on ZnO template. However, it showed weak thermal stability that the interface between AlN and ZnO was deteriorated by rapid thermal annealing treatment above $700^{\circ}C$. In addition, ZnO layer was largely attacked by MOCVD ambient gas of hydrogen and ammonia around $700^{\circ}C$ through inferior AlN layer deposited by sputtering. And AlN layers were fully peeled off above $900^{\circ}C$.

• Journal of Energy Engineering
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• 제8권1호
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• pp.150-158
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• 1999

본 연구는 저온플라즈마를 이용하여 배기가스중의 SOx와 NOx를 동시에 처리하는 공정을 개발하는 것으로서, 최적의 반응제 선정과 효율적인 공정의 구성을 위해 SOx, NOx와 반응제와 반응기구를 밝히고자 하였다. 실험은 1.0 N㎥/h의 모사가스를 이용한 기초실험과 20 N㎥/h의 실제 연소가스를 이용한 실험으로 진행되었으며, 반응제로는 NH3와 파리핀계 및 올레핀계 탄화수소를 사용하였다. NH3를 반응제로 한 SO2 제거반응은 비플라즈마 조건에서는 NH4HSO3, 플라즈마 조건에서는 (NH4)2SO4의 생성반응이었고, 두 조건 모두 높은 제거율을 나타냈다. 반응제를 사용하지 않은 플라즈마 조건에서 SO2는 환원반응이 일어나고 O2 농도의 증가는 역반응을 증가시키는 화학평형에 의해 SO2의 제거율이 감소되었다. 플라즈마 조건에서 NO는 O2농도가 낮은 경우는 NO의 환원반응이 주로 일어나고, O2 농도가 높을 경우는 산화반응이 지배적이었다. 올레핀계 탄화수소는 플라즈마 조건에서 NO 산화 반응에 탁월한 효과를 보였을 뿐만 아니라 SO2 제거에도 효과를 보여 최대 40%의 제거율을 나타냈으며, NH3의 사용을 줄일 수 있음을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.295-298
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• 2003

The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system BaO-ZnO-$B_2O_3-V_2O_5$. DTA, XRD and SEM were used to study and characterize BaO-ZnO-$B_2O_3-V_2O_5$ glasses. PbO free paste developed at this paper has thermal expansion of $74{\times}10^{-7}/^{\circ}C$, DTA transformation point of $460^{\circ}C$, and firing condition of $560^{\circ}C$, 10min.

• Korean Journal of Materials Research
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• 제30권5호
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• pp.262-266
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• 2020

In this paper, we investigated the effect of the passivation stack with Al₂O₃, hydrogenated silicon nitride (SiN_x:H) stack and Al₂O₃, silicon oxynitride (SiON_x) stack in the n type bifacial solar cell on monocrystalline silicon. SiNx:H and SiON_x films were deposited by plasma enhanced chemical vapor deposition on the Al₂O₃ thin film deposited by thermal atomic layer deposition. We focus on passivation properties of the two stack structure after laser ablation process in order to improve bifaciality of the cell. Our results showed SiN_x:H with Al₂O₃ stack is 10 mV higher in implied open circuit voltage and 60 ㎲ higher in minority carrier lifetime than SiON_x with Al₂O₃ stack at Ni silicide formation temperature for 1.8% open area ratio. This can be explained by hydrogen passivation at the Al₂O₃/Si interface and Al₂O₃ layer of laser damaged area during annealing.

• The Bulletin of The Korean Astronomical Society
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• 제44권2호
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• pp.70.1-70.1
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• 2019

Multiple-harmonic electron cyclotron emissions, often known in the literature as the (n + 1∕2)fce emissions, are a common occurrence in the magnetosphere. These emissions are often interpreted in terms of the Bernstein mode instability driven by the electron loss cone velocity distribution function. Alternatively, they can be interpreted as quasi-thermal emission of electrostatic fluctuations in magnetized plasmas. The present paper carries out a one-dimensional relativistic electromagnetic particle-in-cell simulation and also employs a reduced quasi-linear kinetic theoretical analysis in order to compare against the simulation. It is found that the Bernstein mode instability is indeed excited by the loss cone distribution of electrons, but the saturation level of the electrostatic mode is quite low, and that the effects of instability on the electrons is rather minimal. This supports the interpretation of multiple-harmonic emission in the context of the spontaneous emission and reabsorption in quasi-thermal magnetized plasma in the magnetosphere.

• Korean Journal of Materials Research
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• 제34권6호
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• pp.283-290
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• 2024

The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO₂ has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO₂ on RuO₂ with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO₂ was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 ℃, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10^-6 A/cm² at 1 V, and an EOT at the 0.5 nm level was achieved.

• Restorative Dentistry and Endodontics
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• 제42권2호
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• pp.125-133
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• 2017

Objectives: This study compared the effect of hexamethyldisiloxane (HMDSO) and ammonia ($NH_3$) plasmas on the bond strength of resin cement to fiber posts with conventional treatments. Materials and Methods: Sixty-five fiber posts were divided into 5 groups: Control (no surface treatment); $H_2O_2$ (24% hydrogen peroxide for 1 min); Blasting (blasting with aluminum oxide for 30 sec); $NH_3$ ($NH_3$ plasma treatment for 3 min); HMDSO (HMDSO plasma treatment for 15 min). After the treatments, the Ambar adhesive (FGM Dental Products) was applied to the post surface (n = 10). The fiber post was inserted into a silicon matrix that was filled with the conventional resin cement Allcem Core (FGM). Afterwards, the post/cement specimens were cut into discs and subjected to a push-out bond strength (POBS) test. Additionally, 3 posts in each group were evaluated using scanning electron microscopy. The POBS data were analyzed by one-way analysis of variance and the Tukey's honest significant difference post hoc test (${\alpha}=0.05$). Results: The Blasting and $NH_3$ groups showed the highest POBS values. The HMDSO group showed intermediate POBS values, whereas the Control and $H_2O_2$ groups showed the lowest POBS values. Conclusion: Blasting and $NH_3$ plasma treatments were associated with stronger bonding of the conventional resin cement Allcem to fiber posts, in a procedure in which the Ambar adhesive was used.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.876-879
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• 2003

The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system $BaO-ZnO-B_2O_3-V_2O_5$. DTA, XRD and SEM were used to study and characterize $BaO-ZnO-B_2O_3-V_2O_5$ glasses. PbO free paste developed at this paper has thermal expansion of $74{\times}10^{-7}/^{\circ}C$, DTA transformation point of $460^{\circ}C$, and firing condition of $560^{\circ}C$, 10min.

• Applied Chemistry for Engineering
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• 제29권4호
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• pp.479-483
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• 2018

Our group reported the thermal decomposition of R-22 ($CHClF_2$) refrigerants by nitrogen thermal plasma in previous studies. However, it was proposed that the wastewater generated from the end part of the process contains high concentration of fluoride ion which is a component of R-22. The additional post-treatment process to neutralize the $F^-$ ions in the wastewater was investigated in this study. The wastewater generated through the decomposition of R-22 with the same procedure in the previous work was treated using the neutralizer, $Ca(OH)_2$, and the atmospheric pressure plasma jet (APPJ) independently as a post-treatment process. Wastewater samples were collected directly after the treatment for ion-chromatography analysis to trace the change of the concentration of $F^-$ ion in the wastewater. The fluoride concentration in the wastewater showed the highest value when the single water was used as a neutralizer, and the concentration of fluoride in the wastewater was dramatically reduced when the post-treatments were performed.

• Journal of the Korean institute of surface engineering
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• 제32권3호
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• pp.312-316
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• 1999

The interfacial structure of duplex treated AISI 4140 consisting of iron nitride and TiN layer was characterized by optical microscope, SEM and XRD. A black layer was formed from the decomposition of iron nitride during Ti ion bombardment. The black layer was characterized as an a-Fe phase transformed from the iron nitride by XRD. In order to identify the formation mechanism of the black layer, a thermal analysis of iron nitride undertaken by DSC method. As an iron nitride was mostly consisted of ${\gamma}$'-Fe$_4$N and $\varepsilon$-$Fe_3$N phase after plasma nitriding, in this study, a ${\gamma}$'$-Fe_4$N and $\varepsilon$-$Fe_3$N powders were separately prepared by the different processing conditions of gas nitriding of iron powder in the fluidized bed. From the DSC thermal analysis, the phase transformation of ${\gamma}$'$-Fe_4$N, $\varepsilon$-$Fe_3$N was followed the path of transformation; $ \Upsilon{'}-Fe_4$Nlongrightarrow${\gamma}$-Felongrightarrowa-Fe and of $\varepsilon$-$Fe_3$Nlongrightarrow$\varepsilon$-$Fe_{2.5}$ /N+${\gamma}$'$-Fe_4$Nlongrightarrow${\gamma}$'-Fe$_4$Nlongrightarrow${\gamma}$longrightarrowFelongrightarrowalongrightarrowFe, respectively. It explains the reason why the $\varepsilon$ $-Fe_3$N phase disappeared in the first time and then ${\gamma}$'-Fe$_4$N in the formation of the black layer in the duplex coating.