• 한국재료학회지
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• 제28권12호
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• pp.709-713
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• 2018

To improve the etch rate of $Si_3N_4$ thin film, $H_2SiF_6$ is added to increase etching rate by more than two times. $SiO_3H_2$ is gradually added to obtain a selectivity of 170: 1 at 600 ppm. Moreover, when $SiO_3H_2$ is added, the etching rate of the $SiO_2$ thin film increases in proportion to the radius of the wafer. In $Si_3N_4$ thin film, there is no difference in the etching rate according to the position. However, in the $SiO_2$ thin film, the etching rate increases in proportion to the radius. At the center of the wafer, the re-growth phenomenon is confirmed at a specific concentration or above. The difference in etch rates of $SiO_2$ thin films and the reason for regrowth at these positions are interpreted as the result of the flow rate of the chemical solution replaced with fresh solution.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.33-36
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• 2003

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten (W) on $SiO_2$ layer, the Ti/TiN barrier layer is usually deposited onto $SiO_2$ for increasing adhesion ability with W film. Generally, for the W-CMP (chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidants controlling the polishing selectivity of W/Ti/TiN layer were investigated. The alumina $(Al_2O_3)$ abrasive containing slurry with 5 % $H_2O_2$ as the oxidizer, was studied. As our preliminary experimental results, very low removal rates were observed for the case of no-oxidant slurry. This low removal rate is only due to the mechanical abrasive force. However, for Ti and TiN with 5 % $H_2O_2$ oxidizer, different removal rate was observed. The removal mechanism of Ti during CMP is mainly due to mechanical abrasive, whereas for TiN, it is due to the formation of metastable soluble peroxide complex.

• Bulletin of the Korean Chemical Society
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• 제31권10호
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• pp.2980-2984
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• 2010

A new poly (vinyl chloride) (PVC) membrane electrode that is highly selective to $Mn^{+2}$ ions was prepared using N,N'-bis(2'-pyridinecarboxamide)-1,2-ethane ($bpenH_2$) as a suitable neutral carrier. This concentration range ($1.0{\times}10^{-5}$ to $1.0{\times}10^{-1}\;M$) with Nernstian slope of $29.3{\pm}0.5\;mV$ per decade. The detection limit and the response time of electrode were $8.0{\times}10^{-6}\;M$ and (${\leq}15\;s$) respectively. The membrane can be used for more than two months without observing any divergence. The electrodes exhibited excellent selectivity for $Mn^{+2}$ ion over other mono-, di- and trivalent cations. Selectivity coefficients were determined by the matched potential method (MPM). The electrode can be used in the pH range from 4.0 - 9.0. The isothermal coefficient of this electrode amounted to 0.00023 V/$^{\circ}C$. The stability constant (log $K_s$) of the $Mn^{+2}$ - $bpenH_2$ complex was determined at $25^{\circ}C$ by potentiometric titration in mixed aqueous solution. The proposed electrode was applied to the determination of $Mn^{+2}$ ions in real samples.

• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.378-383
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• 2004

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten(W) on SiO$_2$ layer, the Ti/TiN barrier layer is usually deposited onto SiO$_2$ for increasing adhesion ability with W film. Generally, for the W-CMP(chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidant on the polishing selectivity of W/Ti/TiN layer was investigated. The alumina(A1$_2$O$_3$)-based slurry with $H_2O$$_2$ as the oxidizer was used for CMP applications. As an experimental result, for the case of 5 wt％ oxidizer added, the removal rates were improved and polishing selectivity of 1.4:1 was obtained. It was also found that the CMP characteristics of W and Ti metal layer including surface roughness were strongly dependent on the amounts of $H_2O$$_2$ oxidizer.

• 멤브레인
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• 제30권6호
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• pp.420-432
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• 2020

(PIM-1)과 ellagic acid로 만든 랜덤형 공중합체가 간단한 방법으로 합성되었으며, 이산화탄소 분리막에 대한 적용 가능성에 대해서 연구하였다. 이 공중합체의 경우 PIM (polymers with intrinsic microporosity) 고분자의 미세 기공 구조에 기인한 높은 기체 투과도와 평면 구조와 친수성을 갖는 ellagic acid에 기인한 높은 이산화탄소에 대한 선택성에 의해 우수한 이산화탄소 기체 분리 성능을 나타내었다. 즉, 이산화탄소에 대한 투과도 4516 Barrer와 CO2/N2 (> 23~26) 및 CO2/CH4 (>18~19)의 높은 선택성으로 두 쌍의 가스 혼합물에 대해 Robeson 상한(2008)을 초과한 결과를 나타내었다. 이와 같이 PIM-1에 평면구조를 갖는 ellagic acid을 혼입하면 PIM-1의 꼬인 구조를 방해하여 기체 투과성을 향상 시킬 뿐만 아니라 공중합체의 강성과 극성이 증가하여 N2 및 CH4에 대한 CO2의 선택성을 증가시키는 결과를 확인하였다.

• Bulletin of the Korean Chemical Society
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• 제14권5호
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• pp.594-598
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• 1993

The protonation constants of the 14-membered tetraaza macrocycles A(3,14-dimethyl-2,6,13,17-tetraazatricyclo$[l6.4.0^{1,18}.0^{7,12}]$docosane) and B(2,3,6,13,14,17-hexamethyl-2,6,13,17-tetraazatric yclo-[l6.4.$0^{1,18}.0^{7,12}$]docosane) were measured by potentiometry. The formation constants of each of these ligands with copper(II) and nickel(II) were determined by an out-of-cell spectrophotometric method. The results indicate that the per-N-methylated macrocycle B exhibits much higher selectivity for complex formation with copper(II) over nickel(II) ion than A and other related 14-membered tetraaza macrocycles. The effects of the N-and C-substituents on the basicity and the metal ion selectivity of the ligands are discussed. The synthesis and properties of copper(II) and nickel(II) complexes of B are also described.

• Molecules and Cells
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• 제25권1호
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• pp.91-98
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• 2008

The Glu/$Asp^{7.32}$ residue in extracellular loop 3 of the mammalian type-I gonadotropin-releasing hormone receptor (GnRHR) interacts with $Arg^8$ of GnRH-I, conferring preferential ligand selectivity for GnRH-I over GnRH-II. Previously, we demonstrated that the residues (Ser and Pro) flanking Glu/$Asp^{7.32}$ also play a role in the differential agonist selectivity of mammalian and non-mammalian GnRHRs. In this study, we examined the differential antagonist selectivity of wild type and mutant GnRHRs in which the Ser and Pro residues were changed. Cetrorelix, a GnRH-I antagonist, and Trptorelix-2, a GnRH-II antagonist, exhibited high selectivity for mammalian type-I and non-mammalian GnRHRs, respectively. The inhibitory activities of the antagonists were dependent on agonist concentration and subtype. Rat GnRHR in which the Ser-Glu-Pro (SEP) motif was changed to Pro-Glu-Val (PEV) or Pro-Glu-Ser (PES) had increased sensitivity to Trptorelix-2 but decreased sensitivity to Cetrorelix. Mutant bullfrog GnRHR-1 with the SEP motif had the reverse antagonist selectivity, with reduced sensitivity to Trptorelix-2 but increased sensitivity to Cetrorelix. These findings indicate that the residues flanking $Glu^{7.32}$ are important for antagonist as well as agonist selectivity.

• 대한전자공학회논문지SD
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• 제37권7호
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• pp.1-6
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• 2000

본 연구에서는 Pt 박막을 식각하기 이하여 기존에 최적화된 가스 혼합비인 $Cl_2$(10)Ar (90)에 $N_2$ 가스를 첨가하기 실험하였다. $Cl_2$(10)/Ar(90)의 가스 혼합비에 20% $N_2$가스 첨가시, $SiO_2$ 마스크에 대한 Pt 박막의 선택비 향상으로 70$^{\circ}$ 이상의 식각 프로파일을 얻을 수 있었다. 이는 $SiO_2$ 마스크 위에 Si-N, Si-O-N과 같은 차단막 생성을 통한 결과로 확인 되어졌다. $SiO_2$ 마스크에 대한 Pt 박막의 최대 선택비와 식각률은 각각 1.71과 4125 ${\AA}$/min 이다. 이는 Pt-N, Pt-N-Cl과 같은 휘발성 화합물의 생성을 통한 결과로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• 멤브레인
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• 제30권6호
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• pp.409-419
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• 2020

본 연구에서는 ZIF-8와 amine으로 개질된 ZIF-8 (amineZIF-8) 함량에 따른 PEBAX/ZIF-8, PEBAX/amineZIF-8 복합막을 제조하고, 각 복합막에 대해 N2와 CO2의 기체투과 성질을 조사하였다. N2와 CO2 투과도는 PEBAX/ZIF-8 복합막의 경우 ZIF-8 함량이 많아질수록 증가하였고, PEBAX/amineZIF-8 복합막의 경우 amineZIF-8 20 wt%까지 증가하다가 그 이상의 함량에서는 감소하였다. CO2/N2 이상 선택도는 PEBAX/ZIF-8과 PEBAX/amineZIF-8 복합막 모두 ZIF-8과 amineZIF-8의 함량 20 wt%까지는 증가하다가 그 이후 감소하였고, PEBAX/amineZIF-8 복합막의 경우는 감소폭이 적었다. AmineZIF-8 20 wt%에서 CO2/N2 이상 선택도가 가장 높았던 이유는 amine 개질로 PEBAX와 amineZIF-8 사이에서의 호환성을 높이고, amineZIF-8이 PEBAX 내에 고르게 분산되면서 3.4 Å 기공 크기를 갖고 있는 ZIF-8 효과와 CO2에 친화성이 있는 amine의 효과를 가장 크게 받았기 때문으로 보인다.