• Title/Summary/Keyword: $N_2$ selectivity

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Hydrocarbon Gas Permeation Characteristics of PTMSP/LDH Composite Membranes (PTMSP/LDH 복합막의 탄화수소 기체투과 특성)

  • Jeong, Yeon-Eim;Lee, Hyun-Kyung
    • Membrane Journal
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    • v.24 no.6
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    • pp.423-430
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    • 2014
  • PTMSP/LDH composite membranes were prepared by adding 0, 1, 3, and 5 wt% LDH contents to PTMSP. The gas permeability and selectivity for $H_2$, $N_2$, $CH_4$, $C_3H_8$, $n-C_4H_{10}$ were investigated as a function of LDH content. As LDH content of PTMSP/LDH composite membranes increased to 5 wt%, the gas permeability for $H_2$ and $N_2$ gradually decreased, while $n-C_4H_{10}$ permeability rapidly increased. The gas permeability for $CH_4$ and $C_3H_8$ was found to decrease for the membranes with LDH content range of 0~3 wt%, however increase in the range of 3~5 wt%. As LDH content of PTMSP/LDH composite membranes increased to 5 wt%, the selectivity of membranes gradually increased for $H_2$, $N_2$, $CH_4$, $C_3H_8$, $n-C_4H_{10}$ over $H_2$, $N_2$. However the selectivity for $C_3H_8$ and $n-C_4H_{10}$ over $CH_4$ increased in the range of LDH content 0~3 wt% but decreased in the range of 3~5 wt%. The $CH_4$ and $n-C_4H_{10}$ selectivity over $H_2$ and $N_2$ increased as $CH_4$ and $n-C_4H_{10}$ permeability increased. The $n-C_4H_{10}$ selectivity over $CH_4$ increased with increasing $n-C_4H_{10}$ permeability up to 182,000 barrer and decreased above 182,000 barrer of $n-C_4H_{10}$ permeability. The $C_3H_8$ selectivity over $H_2$ and $N_2$ was found to decrease as the $C_3H_8$ permeability increased from 46,000 to 50,000 barrer, but to increase with increasing permeability from 50,000 to 52,300 barrer and decrease again with increasing permeability from 52,300 to 60,000 barrer. The $C_3H_8$ selectivity over $CH_4$ was found to decrease with increasing $C_3H_8$ permeability up to 52,300 barrer but increase above 52,300 barrer.

Gas Permeation Characteristics of PEBAX-PEI Composite Membranes Containing ZIF-8@GO (ZIF-8@GO를 함유한 PEBAX-PEI 복합막의 기체투과 특성)

  • Yi, Eun Sun;Hong, Se Ryeong
    • Applied Chemistry for Engineering
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    • v.32 no.4
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    • pp.431-441
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    • 2021
  • In this study, PEBAX/GO-PEI and PEBAX/ZIF-8@GO-PEI composite membranes were prepared by varying the contents of GO and ZIF-8@GO in PEBAX, and also the gas permeation characteristics of N2 and CO2 was studied. Overall, the N2 and CO2 permeability of the PEBAX/GO-PEI composite membrane decreased as the GO content increased, and the CO2/N2 selectivity slightly increased. In the case of PEBAX/ZIF-8@GO-PEI composite membrane, the permeability of N2 decreased, but CO2 increased to 1 wt% of ZIF-8@GO and then decreased in the content thereafter. The CO2/N2 selectivity at 1 wt% of ZIF-8@GO was 92.3, showing the highest selectivity. This is thought to be due to the greatest effect of GO and ZIF-8 with good affinity for CO2 alongside the effect of porosity ZIF-8 while improving compatibility with PEBAX and dispersing evenly. In addition, PEBAX/ZIF-8@GO-PEI composite membrane improved both CO2 permeability and CO2/N2 selectivity than those of the PEBAX-PEI and PEBAX/GO-PEI membranes, except for ZIF-8@GO 5 wt%. The result was close to the Robeson upper bound.

Selective etch of silicon nitride, and silicon dioxide upon $O_2$ dilution of $CF_4$ plasmas ($CF_4$$O_2$혼합가스를 이용한 산화막과 질화막의 선택적 식각에 관한 연구)

  • 김주민;원태영
    • Electrical & Electronic Materials
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    • v.8 no.1
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    • pp.90-94
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    • 1995
  • Reactive Ion Etching(RIE) of Si$_{3}$N$_{4}$ in a CF$_{4}$/O$_{2}$ gas plasma exhibits such good anisotropic etching properties that it is widely employed in current VLSI technology. However, the RIE process can cause serious damage to the silicon surface under the Si$_{3}$N$_{4}$ layer. When an atmospheric pressure chemical vapor deposited(APCVD) SiO$_{2}$ layer is used as a etch-stop material for Si$_{3}$N$_{4}$, it seems inevitable to get a good etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$. Therefore, we have undertaken thorough study of the dependence of the etch rate of Si$_{3}$N$_{4}$ plasmas on $O_{2}$ dilution, RF power, and chamber pressure. The etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$ has been obtained its value of 2.13 at the RF power of 150 W and the pressure of 110 mTorr in CF$_{4}$ gas plasma diluted with 25% $O_{2}$ by flow rate.

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Gas Permeation Characteristics of PEBAX2533 Membrane Containing PEGDA and ZIF-8 (PEGDA와 ZIF-8을 함유한 PEBAX2533 막의 기체투과 특성)

  • Kim, Sun Hee;Hong, Se Ryeong;Lee, Hyun Kyung
    • Membrane Journal
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    • v.30 no.1
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    • pp.46-56
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    • 2020
  • In this study, poly (ether-block-amide) (PEBAX)/poly (ethylene) glycoldiacrylate (PEGDA)/zeolitic imidazolate framework-8 (ZIF-8)-polyethersulfone (PES) composite membranes were prepared. The gas permeation properties of N2 and CO2 were investigated for each composite membrane. First, the gas permeability in the PEBAX/PEGDA-PES composite membrane decreased with increasing PEGDA content for each molecular weight at PEGDA250, PEGDA575, and PEGDA-700 g/mol. The CO2/N2 selectivity showed a constant value and gradually increased with increasing PEGDA content after 30 wt% PEGDA, and PEBAX/PEGDA250 50 wt%-PES prepared by adding PEGDA250 g/mol 50 wt% showed a selectivity of 15.1. This is because as the PEGDA content increases, the number of diacrylate groups increases, and the CO2 affinity due to the ether structure of PEGDA increases. Gas permeation properties according to ZIF-8 were investigated for composite membranes of PEGDA 0 to 30 wt%, with CO2/N2 selectivity almost constant for each molecular weight. The permeability of N2 and CO2 gradually increased with increasing ZIF-8 content, and CO2/N2 selectivity was the highest at 3.4 in PEBAX/PEGDA250 g/mol 30 wt%/ZIF-8 20 wt%-PES composite membrane.

Selectivity of the α6 nAChR Subunit on α-conotoxin BuIA Studied by Molecular Dynamics Simulations (분자동역학 전산모사에 의한 α6 nAChR Subunit의 α-conotoxin BuIA에 대한 선택성 연구)

  • Tham, Phan Thi Hong;Yi, Myunggi
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.48 no.1
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    • pp.71-75
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    • 2015
  • Nicotinic acetylcholine receptors (nAChRs) are essential for neurotransmission and important therapeutic targets of diseases related to neurotransmission. A recent experimental study identified three residues (Lys185, Asp187, and Ile188) of the ${\alpha}6$ nAChR subunit as determinants of ${\alpha}$-conotoxin BuIA selectivity, yet how these residues confer toxin selectivity remains unclear. In this study, we performed all-atom molecular dynamics simulations with two toxin-bound ${\alpha}4{\beta}2$ nAChR systems: the wild-type ${\alpha}4{\beta}2$ and one in which we replaced the three ${\alpha}4$ subunit residues with three ${\alpha}6$ subunit residues identified in an experimental study (Tyr185Lys, Thr187Asp, and Arg188Ile). After mutation, Asp199 lost the salt bridge formed with Arg188 in the wild type located around loop C. Then, the loop C conformation changed and became more flexible than that of the wild type. We also detected reduced space between the toxin and the binding site in the mutant simulation, resulting in increased binding affinity to the toxin. Therefore, we propose a new Asp199 mutation that breaks the salt bridge and may produce similar selectivity to that of the Arg188 mutation.

Gas Permeation Characteristics by Chitosan/Pebax Composite Membranes (Chitosan/Pebax 복합 막에 의한 기체투과 특성)

  • Kim, Sun Hee;Hong, Se Ryeong
    • Membrane Journal
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    • v.27 no.4
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    • pp.319-327
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    • 2017
  • Chitosan/Pebax composite membranes were prepared with 1 : 1, 1 : 2, 1 : 10, 1 : 30 mass ratio of pebax and chitosan. Gas permeation test were carried out under pressure $6kgf/cm^2$, 35, $45^{\circ}C$ and $65^{\circ}C$ at different temperatures. The gas permeability and selectivity ($CO_2/N_2$) of $N_2$ and $CO_2$ for the Chitosan/Pebax composite membranes were investigated. As the amount of Pebax added to chitosan was increased the gas permeability of both $N_2$ and $CO_2$ increased. The selectivity ($CO_2/N_2$) was 6.9~44.3 in the Chitosan/Pebax composite membranes. With the increase of contents of Pebax and the decrease of temperature, the selectivity ($CO_2/N_2$) increased.

Preparation and Characterization of PTMSP/PDMS-zeolite Composite Membranes for Gas Separation (기체분리를 위한 PTMSP/PDMS-zeolite 복합막의 제조 및 특성)

  • Kim, Na-Eun;Kang, Tae-Beom;Hong, Se Lyung
    • Membrane Journal
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    • v.22 no.5
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    • pp.342-351
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    • 2012
  • In this study, PTMSP[poly(1-trimethylsilyl-1-propyne)]/PDMS[poly(dimethylsioxane)]-NaY zeolite and PTMSP/PDMS-NaA zeolite composite membranes were made to incorporate zeolite into PTMSP/PDMS graft copolymer in order to improve the selectivity and thermal stability, the drop of permeability by physical aging effect during long period of time for the PTMSP membrane. To investigate the physico-chemical characteristics of composite membranes, the analytical methods such as FT-IR, $^1H$-NMR, TGA, SEM, and GPC have been utilized. The gas permeability and selectivity properties of $H_2$ and $N_2$ were evaluated. The permeability of the PTMSP/PDMS-NaY zeolite and PTMSP/PDMS-NaA zeolite composite membranes than PTMSP/PDMS graft copolymer membrane increased, increased as zeolite content increased. On the contrary, the selectivity ($H_2/N_2$) of the composite membranes decreased as zeolite content increased. PTMSP/PDMS-NaA zeolite composite membrane showed better permeability and separation factor than PTMSP/PDMS-NaY zeolite composite membrane.

Selective Cu-MOCVD by Furnace Annealing and N$_{2}$ Plasma Pretreatment (furnace 열처리와 질소 플라즈마 처리에 의한 유기화학증착법을 이용한 선택적 구리 증착)

  • Gwak, Seong-Gwan;Jeong, Gwan-Su
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.3
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    • pp.27-33
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    • 2000
  • The selective chemical vapor deposition techniques for Cu metallization were studied. For enhancing the selectivity, furnace annealing and N$_{2}$ plasma were treated on patterned TiN/BPSG prior to the copper deposition. As a result, Cu did not deposited lead to suppressing the nucleation on BPSG singificantly. With the increasement the plasma treatment temperature, copper nucleation on BPSG was suppressed mote effectively, From TOF-SIMS(Time-of-Flight Secondary ion Mass Spectrometry), it is considered that annealing and N$_{2}$ plasma treatment remove hydroxyl(0-H) group so that eliminating the nucleation site for copper precursor enhance the selectivity.

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$CO_2$ Separation Using Surface Modified Silica Membrane (표면개질 실리카막을 이용한 $CO_2$선택투과분리)

  • 김성수;최현교;박홍채;김태옥;서봉국
    • Journal of Environmental Science International
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    • v.9 no.4
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    • pp.311-318
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    • 2000
  • To improve $CO_2$pemselectivity, a modified silica membrane was prepared by chemical vapor deposition with tetraethoxysilane(TEOS)-ethanol-water, and TEOS-ethanol-water-HCI solution at 300-$600^{\circ}C$. The silica was effectively deposited in the mesopores of a ${\gamma}$-alumina film coated on a porous $\alpha$-alumina tube by evacuating the reactants through the porous wall. In this membrane, $CO_2$interacts, to some extent, with the pore wall, and $CO_2$/$N_2$selectivity then exceeds the value of the Knudsen diffusion mechanism, while the membrane derived from TEOS alone has no $CO_2$selectivity. The silica membrane prepared from TEOS-ethanol-water-HCI solution showed that $CO_2$permeance was $2.5$\times$10^{-7}mol/s^{-1}.m^{-2}.Pa^{-1} at 30{\circ}C$ and $CO_2$/$N_2$selectivity was approximately 3. The $CO_2$permeance and selectivity was improved by enlarging the surface diffusion with modification of chemical affinity of the silica pores.

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Infinite Selectivity Etching Process of Silicon Nitride to ArF PR Using Dual-frequency $CH_2F_2/H_2/Ar$ Capacitively Coupled Plasmas (Dual-frequency $CH_2F_2/H_2/Ar$ capacitively coupled plasma를 이용한 실리콘질화물과 ArF PR의 무한 선택비 식각 공정)

  • Park, Chang-Ki;Lee, Chun-Hee;Kim, Hui-Tae;Lee, Nae-Eung
    • Journal of the Korean institute of surface engineering
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    • v.39 no.3
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    • pp.137-141
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    • 2006
  • Process window for infinite etch selectivity of silicon nitride $(Si_3N_4)$ layers to ArF photoresist (PR) was investigated in dual frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters such as low frequency power $(P_{LF})$, $CH_2F_2$ and $H_2$ flow rate in $CH_2F_2/H_2/Ar$ plasma. It was found that infinite etch selectivities of $Si_3N_4$ layers to the ArF PR on both blanket and patterned wafers can be obtained for certain gas flow conditions. The etch selectivity was increased to the infinite values as the $CH_2F_2$ flow rate increases, while it was decreased from the infinite etch selectivity as the $H_2$ flow rate increased. The preferential chemical reaction of the hydrogen with the carbon in the polymer film and the nitrogen on the $Si_3N_4$ surface leading to the formation of HCN etch by-products results in a thinner steady-state polymer and, in turn, to continuous $Si_3N_4$ etching, due to enhanced $SiF_4$ formation, while the polymer was deposited on the ArF photoresist surface.