• Journal of the Korean Society for Precision Engineering
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• v.5 no.3
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• pp.71-80
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• 1988

This paper dealt with experimentally the effect of $N_2$ and $H_2$ gas mixtures ratio in the fatigue characteristics of SM45C on Ion-nitrided. The specimen were treated water cooling after Ion-nitriding at $500^{\circ}C$ and 5 torr. in 80% $N_2$and 50% $N_2$gas mixtures ratio in the atmosphere for 3 hrs. The hardness distribution and the depth of nitriding layer shows more increase in 80% $N_2$gas mixture ratio than 50% $N_2$. Ion-nitrided specim- en for 80% $N_2$gas mixture ratio show more increase infatigue strenght in the $>1.5{\times}10^5$ cycles region than 50% $N_2$. In the $<1.5{\times}10^5$cycles region, fatigue failure is due to cracking of the brittle nitrided case, and the propergation of the surface cracks into the core. But in the $>1.5{\times}10^5$cycles region, it is found that cracks propagate from the non-metallic inclusions in the subsurface.

• Electrical & Electronic Materials
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• v.7 no.1
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• pp.25-31
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• 1994

Properties of oxynitride films reoxidized by $N_2{O}$ gas after thermal oxidation and $N_2{O}$ oxide films directly oxidized by using $N_2{O}$ gas on the bare silicon wafer have been studied. From the AES analysis, nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2{O}$ oxide has observed. $N_2{O}$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces of Si/oxynitride and Si/$N_2{O}$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of N20 oxide and oxynitride films have somewhat higher than those of thermal $SiO_2{O}$, $N_2{O}$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.

• Journal of Life Science
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• v.10 no.1
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• pp.61-67
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• 2000

An experiment was conducted for extension of shelf-life of cooked squid (Todarodes pacificus) using modified atmosphere packaging. The products were packed in a Ny/PE/LLDPE (0.015/0.045/0.040 mm) laminated film with air, vacuum, CO2 gas, and N2 gas, respectively, and then stored at 5$^{\circ}C$ and 2$0^{\circ}C$. Keeping qualities of the products were investigated by measuring moisture content, H, volatile basic nitrogen (VBN), viable cell count, thiobarbituric acid (TBA) value, peroxide value (POV) and color value. Good qualities of the products stored at 5$^{\circ}C$were maintained at least 9 days, 11 days, more than 35 days and 24 days in air, vacuum, CO2 gas and N2 gas packaging products, respectively. In cases of 2$0^{\circ}C$ storage, however, the shelf-lives of all the products were only one day. The shelf-life extension of the products were observed in CO2 ga>N2 gas>vacuum>air packaging in order.

• Journal of the Korean Magnetics Society
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• v.15 no.4
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• pp.226-230
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• 2005

In this research, magnetic properties and annealing effects of the spin valve structures were investigated, which have Ta underlayer deposited with Ar and $N_2$ gas mixture. Also, TaN underlayer as a diffusion barrier and the substrate were investigated. The structure of the spin valve was Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta. Deposition rate was decreased and resistivity and roughness of the TaN films were increased as the $N_2$ gas flow was increased. The XRD results after high temperature annealing showed that Silicides were created in Si/Ta layer, but not in Si/TaN layer. Magnetoresistance ratio (MR) and exchange coupling field ($H_{ex}$) were decreased when the $N_2$ gas flow was increased over 4.0 sccm. The MR of the spin valves with Ta and TaN films deposited with up to 4.0 sccm of $N_2$ gas flow was increased about $0.5\%$ until the annealing temperature of up to $200^{\circ}C$ and then, decreased. TaN film deposited with 8.0 sccm of $N_2$ gas flow showed twice the adhesion of the Ta film. The above results indicate that with 3.0 sccm of $N_2$ gas flow during the Ta underlayer deposition, the magnetic properties of the spin valves are maintained, while the underlayer may be used as a diffusion barrier and the adhesion between the Si substrate and the underlayer is increased.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.11
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• pp.2016-2020
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• 2010

Indium-zinc-oxide (IZO) films were deposited at room temperature via RF sputtering with varying the flow rate of additive nitrogen gas ($N_2$). Thin film transistors (TFTs) with an inverted staggered configuration were fabricated by employing the various IZO films, such as $N_2$-added and pure (i.e., w/o $N_2$-added), as active channel layers. For all the deposited IZO films, effects of additive $N_2$ gas on their deposition rates, electrical resistivities, optical transmittances and bandgaps, and chemical structures were extensively investigated. Transfer characteristics of the IZO-based TFTs were measured and characterized in terms of the flow rate of additive $N_2$ gas. The experimental results indicated that the transistor action occurred when the $N_2$-added (with $N_2$ flow rate of 0.4-1.0 sccm) IZO films were used as the active layer, in contrast to the case of using the pure IZO film.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.162-167
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• 1992

Tic and TiN layers were deposited on the stainless steel substrate by the reactive RF sputtering. Ar was used for sputtering gas and CzHz and Nz were used for reaction gas. Deposition rate increased linearly to the applied RF power, and decreased as the partial pressure ratio of sputter gas to reactive gas increased. The thin layers were stoichiometric at the partial pressure ratio of 0.03 for Tic and at partial pressure ratio of 0.05 for TiN. The morphologies and structures of the thin layers were investigated by AES, SEM and TEM. In addition, N+ ion was implanted to Tic and the resulting influence on the film and annealing effects were also examined.

• Bulletin of the Korean Chemical Society
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• v.23 no.3
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• pp.459-468
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• 2002

Literature data measured by the author have been processed to report on the effect of solute structure on gas liquid partition coefficients of eleven normal, branched and cyclic alkanes ranging in carbon number from five to nine in sixty nine low molecular weight liquids. The alkane solutes are n-pentane(p), n-hexane(hx), n-heptane(hp), n-octane(o), n-nonane(n), 2-methylpentane(mp), 2,5-dimethylpentane(dp), 2,5-dimethylhexane(dh), 2,3,4-trimethylpentane(tp), cyclohexane(ch), and ethylcyclohexane(ec). The solvent set encompasses most of those studied by Rohrschneider as well as three homologous series of solvents (n-alkanes, 1-alcohols and 1-nitriles) and several perfluorinated alkanes and highly fluorinated alcohols. An excellent linear relationship was observed between lnK and the carbon number of n-alkanes. The effective carbon numbers of branched and cyclic alkanes were determined in a similar fashion to the method of Kovats index. We found that the logarithm of solute vapor pressure multiplied by solute molar volume was a perfect descriptor for the linear relationship with the median effective carbon number.

• Korean Chemical Engineering Research
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• v.46 no.4
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• pp.676-680
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• 2008

TiN thin films were deposited on a $SiO_2(2000{\AA})/Si$ substrate by radio-frequency(rf) magnetron sputtering. TiN films were prepared under varying $N_2$ concentration in $N_2/Ar$ gas mix, rf power and gas pressure, and investigated in terms of deposition rate, resistivity and surface morphology. As $N_2$ concentration increased, the deposition rate and the surface roughness of the films decreased and the resistivity increased. With increasing rf power, the deposition rate increased but the resistivity was decreased. As gas pressure increased, little change in deposition rate was obtained but the resistivity rapidly increased. TiN film with resistivity of $2.46{\times}10^{-4}{\Omega}cm$ at 1 mTorr was formed. It was observed that there existed a correlation between the deposition rate and resistivity. In particular, the gas pressure has a strong influence on the resistivity of thin films.

• Membrane Journal
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• v.27 no.4
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• pp.319-327
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• 2017

Chitosan/Pebax composite membranes were prepared with 1 : 1, 1 : 2, 1 : 10, 1 : 30 mass ratio of pebax and chitosan. Gas permeation test were carried out under pressure $6kgf/cm^2$, 35, $45^{\circ}C$ and $65^{\circ}C$ at different temperatures. The gas permeability and selectivity ($CO_2/N_2$) of $N_2$ and $CO_2$ for the Chitosan/Pebax composite membranes were investigated. As the amount of Pebax added to chitosan was increased the gas permeability of both $N_2$ and $CO_2$ increased. The selectivity ($CO_2/N_2$) was 6.9~44.3 in the Chitosan/Pebax composite membranes. With the increase of contents of Pebax and the decrease of temperature, the selectivity ($CO_2/N_2$) increased.

• Progress in Superconductivity and Cryogenics
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• v.17 no.3
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• pp.9-12
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• 2015

NbN thin films were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. Total sputtering gas pressure was fixed while varying $N_2$ flow rate from 1.4 sccm to 2.9 sccm. X-ray diffraction pattern analysis revealed dominant NbN(200) orientation in the low $N_2$ flow rate but emerging of (111) orientation with diminishing (200) orientation at higher flow rate. The dependences of the superconducting properties on the $N_2$ gas flow rate were investigated. All the NbN thin films showed a small negative temperature coefficient of resistance with resistivity ratio between 300 K and 20 K in the range from 0.98 to 0.89 as the $N_2$ flow rate is increased. Transition temperature showed non-monotonic dependence on $N_2$ flow rate reaching as high as 11.12 K determined by the mid-point temperature of the transition with transition width of 0.3 K. On the other hand, the upper critical field showed roughly linear increase with $N_2$ flow rate up to 2.7 sccm. The highest upper critical field extrapolated to 0 K was 17.4 T with corresponding coherence length of 4.3 nm. Our results are discussed with the granular nature of NbN thin films.