• 한국정밀공학회지
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• 제5권3호
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• pp.71-80
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• 1988

This paper dealt with experimentally the effect of $N_2$ and $H_2$ gas mixtures ratio in the fatigue characteristics of SM45C on Ion-nitrided. The specimen were treated water cooling after Ion-nitriding at $500^{\circ}C$ and 5 torr. in 80% $N_2$and 50% $N_2$gas mixtures ratio in the atmosphere for 3 hrs. The hardness distribution and the depth of nitriding layer shows more increase in 80% $N_2$gas mixture ratio than 50% $N_2$. Ion-nitrided specim- en for 80% $N_2$gas mixture ratio show more increase infatigue strenght in the $>1.5{\times}10^5$ cycles region than 50% $N_2$. In the $<1.5{\times}10^5$cycles region, fatigue failure is due to cracking of the brittle nitrided case, and the propergation of the surface cracks into the core. But in the $>1.5{\times}10^5$cycles region, it is found that cracks propagate from the non-metallic inclusions in the subsurface.

• E2M - 전기 전자와 첨단 소재
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• 제7권1호
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• pp.25-31
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• 1994

Properties of oxynitride films reoxidized by $N_2{O}$ gas after thermal oxidation and $N_2{O}$ oxide films directly oxidized by using $N_2{O}$ gas on the bare silicon wafer have been studied. From the AES analysis, nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2{O}$ oxide has observed. $N_2{O}$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces of Si/oxynitride and Si/$N_2{O}$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of N20 oxide and oxynitride films have somewhat higher than those of thermal $SiO_2{O}$, $N_2{O}$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.

• 생명과학회지
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• 제10권1호
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• pp.61-67
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• 2000

An experiment was conducted for extension of shelf-life of cooked squid (Todarodes pacificus) using modified atmosphere packaging. The products were packed in a Ny/PE/LLDPE (0.015/0.045/0.040 mm) laminated film with air, vacuum, CO2 gas, and N2 gas, respectively, and then stored at 5$^{\circ}C$ and 2$0^{\circ}C$. Keeping qualities of the products were investigated by measuring moisture content, H, volatile basic nitrogen (VBN), viable cell count, thiobarbituric acid (TBA) value, peroxide value (POV) and color value. Good qualities of the products stored at 5$^{\circ}C$were maintained at least 9 days, 11 days, more than 35 days and 24 days in air, vacuum, CO2 gas and N2 gas packaging products, respectively. In cases of 2$0^{\circ}C$ storage, however, the shelf-lives of all the products were only one day. The shelf-life extension of the products were observed in CO2 ga>N2 gas>vacuum>air packaging in order.

• 한국자기학회지
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• 제15권4호
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• pp.226-230
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• 2005

본 연구에서는 스핀밸브 구조에서 하지층으로 많이 사용되고 있는 Ta 층에 질소를 첨가하여 질소량에 따른 자기적 특성과 열처리 결과를 비교 검토하였다. 또한 하지층에 질소를 첨가하여 확산 방지막으로서 역할과 기판과 하지층과의 접착력을 측정하여 비교하였다. 사용된 스핀밸브는 Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta 구조이다. Ta 박막에 비해 TaN 박막의 질소량이 증가할수록 증착률은 감소하였고, 비저항과 표면 거칠기는 증가하였다. 고온에서 열처리 후 측정한 XRD 결과를 보면 Si/Ta 박막에서는 규소화합물이 생성된 반면 Si/TaN 박막에서는 규소화합물을 발견할 수 없었다. 자기저항비(MR)와 교환결합자장($H_{ex}$)은 질소량이 4.0 sccm 이상에서는 감소하였다. 열처리 결과 자기저항비는 하지층이 Ta인 시편과 질소량이 4.0 sccm까지 혼합된 TaN 시편은 $200^{\circ}C$까지는 약 $0.5\%$ 정도 증가하다가 감소하였다. 기판과 하지층과의 접착력을 측정한 결과 Ta 박막보다 질소량이 8.0 sccm인 TaN 박막인 경우 약 2배 강한 접착력을 보였다. 본 연구 결과에 의하면 하지층 증착 시 아르곤 가스에 3.0 sccm 정도의 질소 가스를 혼합하여 사용하면 자기적 특성에 크게 영향을 주지 않으면서 확산 방지막, 접착력 향상등의 이점을 얻을 수 있으리라 사료된다.

• 전기학회논문지
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• 제59권11호
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• pp.2016-2020
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• 2010

Indium-zinc-oxide (IZO) films were deposited at room temperature via RF sputtering with varying the flow rate of additive nitrogen gas ($N_2$). Thin film transistors (TFTs) with an inverted staggered configuration were fabricated by employing the various IZO films, such as $N_2$-added and pure (i.e., w/o $N_2$-added), as active channel layers. For all the deposited IZO films, effects of additive $N_2$ gas on their deposition rates, electrical resistivities, optical transmittances and bandgaps, and chemical structures were extensively investigated. Transfer characteristics of the IZO-based TFTs were measured and characterized in terms of the flow rate of additive $N_2$ gas. The experimental results indicated that the transistor action occurred when the $N_2$-added (with $N_2$ flow rate of 0.4-1.0 sccm) IZO films were used as the active layer, in contrast to the case of using the pure IZO film.

• 한국진공학회지
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• 제1권1호
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• pp.162-167
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• 1992

반응성 RF 스파타 증착법으로 스테인레스 스틸 기판 위에 TiC 박막과 TiN 박막을 증착하였다. 스파타기체로 Ar를, 반응기체로 C2H2와 N2 기체를 사용하였다. 박막의 증착율 은 RF 출력증가에 따라 선형적으로 증가하였으며 스파타기체에 대한 반응 기체의 분압비 증가에 따라 급격하게 감소하였다. 박막의 성분은 TiC 박막의 경우 분압비 0.03에서, TiN 박막의 경우 분압비 0.05에서 stoichiometric한 성분이 된다. 이 TiC, TiN 박막의 morphology와 미세구조 및 계면을 AES, SEM 그리고 TEM으로 조사하였다. 또한 N+ 이온 을 주입하여 N+ 이온 주입효과와 열처리 효과도 조사하였다.

• Bulletin of the Korean Chemical Society
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• 제23권3호
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• pp.459-468
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• 2002

Literature data measured by the author have been processed to report on the effect of solute structure on gas liquid partition coefficients of eleven normal, branched and cyclic alkanes ranging in carbon number from five to nine in sixty nine low molecular weight liquids. The alkane solutes are n-pentane(p), n-hexane(hx), n-heptane(hp), n-octane(o), n-nonane(n), 2-methylpentane(mp), 2,5-dimethylpentane(dp), 2,5-dimethylhexane(dh), 2,3,4-trimethylpentane(tp), cyclohexane(ch), and ethylcyclohexane(ec). The solvent set encompasses most of those studied by Rohrschneider as well as three homologous series of solvents (n-alkanes, 1-alcohols and 1-nitriles) and several perfluorinated alkanes and highly fluorinated alcohols. An excellent linear relationship was observed between lnK and the carbon number of n-alkanes. The effective carbon numbers of branched and cyclic alkanes were determined in a similar fashion to the method of Kovats index. We found that the logarithm of solute vapor pressure multiplied by solute molar volume was a perfect descriptor for the linear relationship with the median effective carbon number.

• Korean Chemical Engineering Research
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• 제46권4호
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• pp.676-680
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• 2008

Radio-frequency (rf) 마그네트론 스퍼터링법을 이용하여 $SiO_2(2000{\AA})/Si$ 기판위에 TiN 박막이 증착되었다. $N_2/Ar$ 혼합가스에서 $N_2$ 가스의 농도, rf power, 공정압력 등을 변화시켜서 TiN 박막이 증착되었고 증착된 박막의 증착속도, 전기저항도 및 표면의 거칠기 등이 조사되었다. $N_2$ 가스의 농도가 증가함에 따라서 증착속도는 감소하였고 저항도는 증가하였으며 표면의 거칠기는 감소하였다. rf power가 증가함에 따라서 증착속도는 증가하였지만 저항도는 감소하였다. 증착압력의 증가에 따라서 증착속도는 큰 변화가 없었지만 저항도가 급격히 증가하였으며, 1 mTorr의 압력에서 $2.46{\times}10^{-4}{\Omega}cm$의 저항도를 갖는 TiN 박막이 얻어졌다. 박막의 증착속도와 저항도는 상관관계가 있는 것이 관찰되었고 특히 증착압력이 박막의 저항도에 가장 큰 영향을 미치는 것을 알 수 있었다.

• 멤브레인
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• 제27권4호
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• pp.319-327
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• 2017

Chitosan과 Pebax[poly(ether-block-amide)의 mass ratio를 1 : 1, 1 : 2, 1 : 10, 1 : 30으로 하여 Chitosan/Pebax 복합 막을 제조하였다. 기체투과 실험은 압력 $6kgf/cm^2$ 하에서 35, 45, $65^{\circ}C$로 온도를 달리하여 진행되었고, Chitosan/Pebax 복합 막에 대한 $N_2$와 $CO_2$의 기체투과도와 선택도($CO_2/N_2$) 등을 조사하였다. $N_2$와 $CO_2$의 투과기체에 대해 Chitosan에 가해지는 Pebax의 함량이 증가할수록 $N_2$와 $CO_2$의 기체투과도는 모두 증가하였다. 선택도($CO_2/N_2$)는 Chitosan/Pebax 복합 막에서 6.9~44.3의 값을 가지며, Pebax의 함량이 증가할수록 그리고 온도가 낮을수록 큰 값을 보였다.

• 한국초전도ㆍ저온공학회논문지
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• 제17권3호
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• pp.9-12
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• 2015

NbN thin films were deposited on thermally oxidized Si substrate at room temperature by using reactive magnetron sputtering in an $Ar-N_2$ gas mixture. Total sputtering gas pressure was fixed while varying $N_2$ flow rate from 1.4 sccm to 2.9 sccm. X-ray diffraction pattern analysis revealed dominant NbN(200) orientation in the low $N_2$ flow rate but emerging of (111) orientation with diminishing (200) orientation at higher flow rate. The dependences of the superconducting properties on the $N_2$ gas flow rate were investigated. All the NbN thin films showed a small negative temperature coefficient of resistance with resistivity ratio between 300 K and 20 K in the range from 0.98 to 0.89 as the $N_2$ flow rate is increased. Transition temperature showed non-monotonic dependence on $N_2$ flow rate reaching as high as 11.12 K determined by the mid-point temperature of the transition with transition width of 0.3 K. On the other hand, the upper critical field showed roughly linear increase with $N_2$ flow rate up to 2.7 sccm. The highest upper critical field extrapolated to 0 K was 17.4 T with corresponding coherence length of 4.3 nm. Our results are discussed with the granular nature of NbN thin films.