• 열처리공학회지
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• 제22권2호
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• pp.88-94
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• 2009

The effect of high temperature gas nitrding (HTGN) on the surface microstructure in pure Ti was investigated. Two phases of TiN and $Ti_2N$ appeared at the outmost surface, and the wide ${\alpha}$-Ti layer was formed at the next layer. On the other hand, the interior region, where the nitrogen was not permeated, exhibited ${\alpha}$'phase. The outmost surface of TiN and $Ti_2N$ showed the maximum hardness of 1000Hv, while the interior ${\alpha}$'phase was ${\sim}350$ Hv. The permeation depth of nitrogen increased with increasing the gas nitriding temperature and time. The nitrogen concentration of the surface layer seems to be over 12.7% at $1100^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1713-1715
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• 1996

The $NO_2$ GAS Sensitivity characteristic of CuTBP(Copper-tetra-tert-butylphthalocyanine) LB films were investigated through a study of current-voltage (I-V) characteristics with a variation of number of electrode finger pairs N ($1{\sim}25$). A concentration of 200ppm $NO_2$ gas was used. It was found that a conductance G increases monotonically as the number of interdigital electrode increases, and a Sensitivity, Reproducibility is stable. As far as a current is concerned, the current when N=25 is greater than that when N=1 by 70 or so. It indicates that the number of interdigital electrodes affects the current, sensitivity and stability. We knew that the $NO_2$ gas detector application possibility using a current of N=25.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.471-474
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• 2000

A flat type microgas sensor was fabricated on the p-type silicon wafer with low stress S $i_3$ $N_4$, whose thickness is 2${\mu}{\textrm}{m}$ using MEMS technology and its characteristics were investigated. W $O_3$thin film as a sensing material for detection of N $O_2$gas was deposited using a tungsten target by sputtering method, followed by thermal oxidation at several temperatures (40$0^{\circ}C$~$600^{\circ}C$) for one hour. N $O_2$gas sensitivities were investigated for the W $O_3$thin films with different annealing temperatures. The highest sensitivity when operating at 20$0^{\circ}C$ was obtained for the samples annealed at $600^{\circ}C$. As the results of XRD analysis, the annealed samples had polycrystalline phase mixed with triclinic and orthorhombic structures. The sample exhibit higher sensitivity when the system has less triclinic structure. The sensitivities, $R_{gas}$ $R_{air}$ operating at 20$0^{\circ}C$ to 5 ppm N $O_2$of the sample annealed at $600^{\circ}C$ were approximately 90. 90.

• 조명전기설비학회논문지
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• 제23권5호
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• pp.96-100
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• 2009

산업사회의 발달과 더불어 신뢰성 높은 양질의 전기에너지와 운전 및 보수의 간편화, 계통 운용의 신뢰성, 안전성 확보가 요구되고 있다. 따라서 본 논문은 각종 전력설비에서 $SF_6$을 대체할 수 있는 친환경절연제로 연구되고 있는 $N_2-O_2$ 혼합가스($N_2:O_2=100$ : 0, 79 : 21, 60 : 40, 40 : 60) 절연파괴특성을 구명(究明)하여 이를 $SF_6$가스의 특성과 비교하였다. 이상의 연구 결과, 제조공기와 Dry-Air 절연특성을 구명함으로서 각종 전력응용 설비의 절연설계에 $SF_6$ 대신 친환경적인 모의공기를 사용 가능함을 본 연구에서 구명(究明)하였다. 제조공기를 이용한 친환경적인 절연재 사용으로 지구의 온난화현상 감소에 크게 기여할 것으로 기대된다.

• 한국세라믹학회지
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• 제37권1호
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• pp.1-5
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• 2000

Cathodoluminescence(CL) properties of ZnO:Zn green phosphor were investigated. ZnO:Zn phosphor was synthesized by varying reducing agents and firing temperatures. ZnS, charcoal and 5% H2 gas mixed with 95% N2 gas(5H2-95N2) were used as the reducing agent and atmosphere. The highest CL intensity of ZnO:Zn phosphor was observed under the condition of 5H2-95N2 atmosphere and firing temperature of 90$0^{\circ}C$ for 1h. Charocal and ZnO as reducing agents in the syntehsis of ZnO:Zn phosphor exhibited about 60% and 40%, respectively, of the CL intensity obtained with 5H2-95N2 atmosphere.

• 열처리공학회지
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• 제8권1호
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• pp.32-43
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• 1995

Ti-6Al-4V alloy are widely used in chemical and aircraft industries for their good corrosion resistance and high strength to weight ratio. Surface alloying of Ti alloy by $CO_2$ laser is able to produce few hundred micrometers thick TiN surface-alloyed layer with high hardness on the substrate very simplely by injecting reaction gas($N_2$) into a laser-generated melt pool and adjust the hardness to the specific requirements of the individual application by changing of laser processing parameters. This research has been investigated the effect of such parameters on TiN surface-alloying of Ti-6Al-4V alloy by $CO_2$ laser. The maximum hardness of TiN surface-alloyed zone waw obtained by injecting 100% $N_2$ gas and it was decreased as the amount of $N_2$ gas in Ar and $N_2$ gas mixture was decreased. As scanning speed was increased, the hardness and depth of TiN surface-alloyed zone was decreased at constant laser power. The surface hardness after double scanning laser treatment is higher than that of single scanning. At constant laser power, the surface roughness is increased after the surface alloying if laser scanning speed is decreased.

• 멤브레인
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• 제23권6호
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• pp.450-459
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• 2013

폴리이미드 기체 분리막의 기체 분리 성능을 향상시키기 위해서 2,3,5,6-Tetramethyl-1,4-phenylenediamine(TMPD) 구조를 지닌 폴리이미드를 1,2-Diaminoethane (DAE)과 1,6-Diaminohexane (DAH)으로 가교시켜 분리막을 제조하였다. Fourier transform infrared spectroscopy (FT-IR)를 이용해 가교 후 이미드 고리가 아미드 그룹으로 전환됨을 확인하였다. 폴리이미드의 열분해 온도는 가교 후 감소하였으며, 이는 가교제의 알킬기 분해 때문이다. 가교된 폴리이미드 분리막의 d-spacing은 가교 시간이 증가함에 따라 감소하였다. 가교 후 $CH_4$, $N_2$, $O_2$, $CO_2$ 기체의 투과도는 가교 전 보다 감소하였으며, DAH로 가교된 분리막이 DAE보다 더 높은 투과도를 나타냈다. 투과도와 달리 $CO_2/CH_4$, $CO_2/N_2$, $O_2/N_2$ 기체 선택도 모두 가교 시간이 길어질수록 증가된 결과가 나타났다. $CO_2/CH_4$ 기체의 선택도는 DAE로 6분 가교 시 최대 증가치를 나타냈으며 39.5%까지 증가하였다. $O_2/N_2$ 선택도 또한 DAE로 6분 가교 시 최대 증가치를 가지며 20.5%까지 증가하였다. 이를 통해서 DAE가 DAH보다 선택도 증가에 적합한 가교제임을 예상할 수 있으며 이와 달리 $CO_2/N_2$ 선택도는 DAE로 3분 가교 시 감소해 $CO_2/N_2$ 분리에는 적합하지 않은 결과가 나타났다.

• 반도체디스플레이기술학회지
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• 제19권2호
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• pp.22-25
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• 2020

Deep red EuSi₂O₂N₂ phosphors were synthesized under various sintering gas pressures (1 atm, 2 atm, and 3 atm). They were in good agreement with the standard EuSi₂O₂N₂ ICSD card # 41-6046 (a monoclinic crystal system with space group of P2₁/a). Their photoluminescence intensities were significantly increased with increasing the gas pressures. They showed a broad band emission peaking at 680 nm due to 4f⁶5d¹ - 4f⁷ of Eu²⁺ ion, which can be efficiently excited in the visible range up to 550 nm. The best one at 3 atm was applied for red LED based on blue chip, which showed the strong deep red emission.

• 한국가스학회지
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• 제19권2호
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• pp.37-44
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• 2015

본 연구에서는 CBM의 1차 생산뿐 아니라 $CO_2$나 $N_2$ 주입을 통한 ECBM, 혹은 지중저장을 목적으로 석탄층에 $CO_2$를 주입할 때 발생할 수 있는 암체의 부피변화 영향을 고려하여 기존의 Langmuir 흡착 관계식을 개선하였다. 본 모델의 검증을 위해 $CO_2$나 $CH_4$, $N_2$의 단일성분 흡착실험 데이터에 기존 Langmuir 모델값과 본 모델의 결과값을 비교하였다. 그 결과, 기존 모델에서는 흡착용량이 큰 석탄일수록, 흡착친화도가 큰 가스일수록 실험값과 모델값 사이의 오차가 커지는 경향이 나타났지만 본 모델에서는 모든 조건에서 실험결과를 잘 묘사하였고 본 모델을 통해 예측한 부피변형률 역시 실험값과 유사함을 확인하였다. 이렇게 개선된 단일성분 흡착모델을 혼합가스의 흡착모델인 IAS 모델에 적용하여 부피변화가 고려된 IAS모델로 개선하였다. 그 결과 혼합가스에 대한 흡착거동 역시 기존 모델에 비해 정확도를 높였고 이는 Hall 등(1994)이 수행한 혼합가스의 흡착실험결과와의 매칭을 통해 확인하였다.

• 한국전기전자재료학회논문지
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• 제20권9호
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• pp.816-820
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• 2007

We measured the electron drift velocity, W, in 0.5% $SF_6-Ar$ mixture over the E/N range from 30 Td to 300 Td and gas pressure range from 0.1 to 0.5 Torr by the double shutter drift tube with a variable drift distance, and calculated over the same E/N and gas pressure range by using the two-term approximation of the Boltzmann equation. The measured and calculated values at different gas pressure at each E/N was appreciable dependence in the results on the gas pressure.