• Applied Chemistry for Engineering
• /
• v.7 no.6
• /
• pp.1034-1042
• /
• 1996

Various $TiO_2-SiO_2$ composite powders were prepared by the modified sol-gel method using 1-dodecanol as DCCA (Dryng Control Chemical Additive ). Their characterizations were carried out and their photocatalytic catalysis was examined on the evolution reaction of hydrogen. The weight losses at $500^{\circ}C$ of only $TiO_2$ and $SiO_2$ powders were 33. 0wt% and 42.5wt%, respectively, and those of the $TiO_2/SiO_2$ powders ($TiO_2/SiO_2=25/75$, 50/50 and 75/25) were about $70.0{\pm}3.0wt%$. The released substances from the powders were almost organic matters. The as-prepared powders except only $TiO_2$ powder were amorphous. Transformation of anatase to rutil was hindered by $SiO_2$ component and the crystallinity of anatase was decreased with increasing $SiO_2$ contents. The as-prepared powders were bulky states. By heating at $600^{\circ}C$ for 1 hr $TiO_2-SiO_2$ powders ($TiO_2=100%$, $TiO_2/SiO_2=75/25,\;50/50$) showed agglomerates consisted of particles in submicron, but those of $TiO_2/SiO_2=25/75$ and $SiO_2=100%$ were still bulky states. Specific surface area of the powders heat-treated at $600^{\circ}C$ for 1hr was increased with $SiO_2$ concents and their pore sizes were also depended on $SiO_2$ contents. The photocatalytic activity of $TiO_2/SiO_2=75/25$ heat-treated at $600^{\circ}C$ for 1hr was 0.240mo1/h.g-cat as $H_2$ evolution rate. This value was about 2.0 times that of P-25(Degussa P-25) as a standard photocatalyst.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
• /
• 2002.05a
• /
• pp.23-28
• /
• 2002

This paper describes the machining characteristics of the $MoSi_2$ based composites by electric discharge drilling with various tubular electrodes, besides, Hardness characteristics and microstructures of $Nb/MoSi_2$ laminate composites were evaluated from the variation of fabricating conditions such as preparation temperature, applied pressure and pressure holding time. $MoSi_2$ -based composites has been developed in new materials for jet engine of supersonic-speed airplanes and gas turbine for high- temperature generator. Achieving this objective may require new hard materials with high strength and high temperature-resistance. However, With the exception of grinding, traditional machining methods are not applicable to these new materials. Electric discharge machining (EDM) is a thermal process that utilizes a spark discharge to melt a conductive material, the tool electrode being almost non-unloaded, because there is no direct contact between the tool electrode and the workpiece. By combining a nonconducting ceramics with more conducting ceramic it was possible to raise the electrical conductivity. From experimental results, it was found that the lamination from Nb sheet and $MoSi_2$ powder was an excellent strategy to improve hardness characteristics of monolithic $MoSi_2$. However, interfacial reaction products like (Nb, Mo)$SiO_2$ and $Nb_2Si_3$ formed at the interface of $Nb/MoSi_2$ and increased with fabricating temperature. $MoSi_2$ composites which a hole drilling was not possible by the conventional machining process, enhanced the capacity of ED-drilling by adding $NbSi_2$ relative to that of SiC or $ZrO_2$ reinforcements.

• Journal of the Korean Magnetics Society
• /
• v.16 no.5
• /
• pp.240-244
• /
• 2006

In this paper, magnetic properties and annealing behavior of spin valve structures using Mo(MoN) layers as underlayers were studied varying the thickness of the underlayers. The spin valve structure was consisted of Si substrate/$SiO_2(2,000{\AA})/Mo(MoN)(t{\AA})/NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(65\;{\AA})/Ta(25\;{\AA})$. Also, MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The resistivity of the MoN film increased as the $N_2$ gas flow rate was increased. After annealing at $600^{\circ}C$, XRD results did not show peaks of silicides. XPS results indicated MoN film deposited with 5 sccm of $N_2$ gas flow rate was more stable than the film deposited with 1 sccm of $N_2$ gas flow rate. The variations of MR ratio and magnetic exchange coupling fold were small for the spin valve structures using Mo(MoN) underlayers up to thickness of45 ${\AA}$. MR ratio of spin valves using MoN underlayers deposited with various $N_2$ gas flow rate was about 7.0% at RT and increased to about 7.5% after annealing at $220^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased to about 3.5%. Variation of $N_2$ gas flow rate up to 5 sccm did not change the MR ratio and $H_{ex}$ appreciably.

• Applied Microscopy
• /
• v.34 no.2
• /
• pp.95-102
• /
• 2004

The TEM samples prepared by ion milling have the advantage that thin area can be obtained from almost any materials. However, it has the disadvantage that the amount of thin area can often be quite limited. For the cross-sectioned samples and grossly heterogeneous materials, the thickness of less than $0.1{\mu}m$ can be achieved by mechanical grinding and polishing (tripod polisher) and then the TEM samples may be ion-milled for final thinning or cleaning. These approaches were described in this paper. Examples of TEM observations were taken from cross-section samples of thin films on silicon and sapphire, from diffusion layers between $Mo_5Si_3\;and\;Mo_2B$, and from rapidly solidified 304 stainless steel powders embedded in electroplated copper.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.211-212
• /
• 2010

GaN 기반의 상부발광형 LED는 동작되는 동안 생기는 전기적 단락, 그리고 칩 위의 p-형 전극과 n-형 전극 사이에 생기는 누설전류 및 신뢰성 확보를 위하여 칩 표면에 passivation 층을 형성하게 된다. SiO2, Si3N4와 같은 passivation layers는 일반적으로 PECVD (Plasma Enhanced Chemical Vapor Deposition)공정을 이용한다, 하지만 이는 공정 특성상 plasma로 인한 damage가 유발되기 때문에 표면 누설 전류가 증가 한다. 이로 인해 forward voltage와 reverse leakage current의 특성이 저하된다. 본 실험에서는 원자층 단위의 박막 증착으로 인해 PECVD보다 단차 피복성이 매우 우수한 PEALD(Plasma Enhanced Atomic Layer Deposition)공정을 이용하여 Al2O3 passivation layer를 증착한 후, 표면 누설전류와 빛의 출력 특성에 대해서 조사해 보았다. PSS (patterned sapphire substrate) 위에 성장된 LED 에피구조를 사용하였고, TCP(Trancformer Copled Plasma)장비를 사용하여 에칭 공정을 진행하였다. 이때 투명전극을 증착하기 위해 e-beam evaporator를 사용하여 Ni/Au를 각각 $50\;{\AA}$씩 증착한 후 오믹 특성을 향상시키기 위하여 $500^{\circ}C$에서 열처리를 해주었다. 그리고 Ti/Au($300/4000{\AA}$) 메탈을 사용하여 p-전극과 n-전극을 형성하였다. Passivation을 하지 않은 경우에는 reverse leakage current가 -5V 에서 $-1.9{\times}10-8$ A 로 측정되었고, SiO2와 Si3N4을 passivation으로 이용한 경우에는 각각 $8.7{\times}10-9$과 $-2.2{\times}10-9$로 측정되었다. Fig. 1 에서 보면 알 수 있듯이 5 nm의 Al2O3 film을 passivation layer로 이용할 경우 passivation을 하지 않은 경우를 제외한 다른 passivation 경우보다 reverse leakage current가 약 2 order ($-3.46{\times}10-11$ A) 정도 낮게 측정되었다. 그 이유는 CVD 공정보다 짧은 ALD의 공정시간과 더 낮은 RF Power로 인해 plasma damage를 덜 입게 되어 나타난 것으로 생각된다. Fig. 2 에서는 Al2O3로 passivation을 한 소자의 forward voltage가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 0.07 V와 0.25 V씩 낮아지는 것을 확인할 수 있었다. 또한 Fig. 3 에서는 Al2O3로 passivation을 한 소자의 output power가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 2.7%와 24.6%씩 증가한 것을 볼 수 있다. Output power가 증가된 원인으로는 향상된 forward voltage 및 reverse에서의 leakage 특성과 공기보다 높은 Al2O3의 굴절률이 광출력 효율을 증가시켰기 때문인 것으로 판단된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.95-98
• /
• 2002

전력선 통신 blocking filter용 자심 재료를 개발하기 위해서 MnO 24 mol%, ZnO 25 mol% and $Fe_{2}O_{3}$ 51 mol% 의 기본조성에 $MoO_{3}$, $SiO_{2}$, CaO를 첨가하여 $1350^{\circ}C$에서 대기압 상수 A를 7.8롤 고정하고 소결하여 미세구조를 제어하였으며 기본 조성에 $MoO_{3}$ 400 ppm, $SiO_{2}$ 100 ppm and CaO 200 ppm을 첨가한 경우 평균 입경 $25{\mu}m$ 의 균일한 결정립으로 구성된 미세구조를 얻었고 기공의 감소에 의한 치밀화로 $4.98g/cm^{2}$의 고밀도화가 이루어 졌다. 또한 소결체의 균일한 미세구조와 고밀도화로 인해서 8221(${25^{\circ}C}$, 1 KHz) 의 가장 높은 투자율 특성을 나타냈다. 시편의 온도가 증가함에 따라 투자율이 증가되어 ${110^{\circ}C}$에서 13904의 거대 투자융이 측정되었고, 코일의 인가주파수가 1 KHz에서 1 MHz까지 증가됨에 따라 최고 ${102^{\circ}C}$까지 시편 온도가 상승하였다. 가장 높은 투자율 특성을 나타낸 ferrite 코어를 사용하여 단상 및 3상용 블로킹 필터의 감쇄율을 측정한 결과 현재 국내의 전력선 통신용 주파수 대역으로 규정되어 있는 10 KHz ~ 450 KHz 대역에서 각각 -46.46 dB와 -73.9 dB의 최고 값을 얻었다.

• Korean Journal of Materials Research
• /
• v.32 no.5
• /
• pp.258-263
• /
• 2022

Porous ceramics have the advantages of low density, low thermal conductivity, and excellent mechanical properties. Among porous ceramic manufacturing methods, the replica template method allows the easy manufacturing of porous filters with the highest porosity and pores of the desired size, but it also has the disadvantage that the resulting filters have low mechanical strength. To overcome this shortcoming, mullite (3Al₂O₃·2SiO₂) whiskers, which have excellent thermal stability and high mechanical strength, were introduced in porous ceramic structure. The mullite whiskers were synthesized using a composition of Al₂O₃, flyash and MoO₃. The morphologies and crystal structures of the mullite whiskers with MoO₃ contents were investigated in detail. When the porous ceramic with mullite whiskers was fabricated using 20 wt% MoO₃ catalyst the most uniform microstructure was obtained, and the mullite whiskers showed the highest aspect ratio of 47.03. The porosity and compressive strength of the fabricated porous ceramic were 82.12 % and 0.83 MPa, respectively.

• Journal of Welding and Joining
• /
• v.31 no.6
• /
• pp.65-70
• /
• 2013

In joining Alumina to copper plate by Mo-Mn metallizing process, the effects of the composition of metallizing paste on the bonding strength were investigated. The bonding strength increased with increasing Mn amount in the paste up to 20% but followed by the decrease with addition of Mn. The maximum bonding strength reached 50MPa at 20%Mn when heated to $1550^{\circ}C$ for 60minute. The addition of Si to the metallizing powder increased the bonding strength of the joint by enhancing the mechanical bonding between the Alumina and the metallizing layer due to the decrease of layer viscosity with the addition of $SiO_2$. It is thought that MnO reacted with $Al_2O_3$ to yield $MnAl_2O_4$ spinel, forming a joint.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2012.05a
• /
• pp.150-150
• /
• 2012

본 연구는 1차원 나노 구조의 합성과 기초적 분석에 관한 연구로써 특히 무기 산화물 나노재료를 그 대상으로 하였다. 내용으로는 첫째, 1차원 코어 나노와이어의 합성을 하였고 Thermal evaporation, substrate의 가열, 그리고 MOCVD 를 사용한 결과들을 나열한다. 둘째, 코어-쉘 나노와이어를 제작하기 위하여 특히 쉘층의 제작방법을 연구하였는데 PECVD, ALD, 그리고 sputtering에 의한 결과들을 나열하고 간단히 설명한다. Thermal evaporation에 의한 1차원 나노와이어 합성의 경우는 MgO의 예를 들었는데 MgO 나노와이어는 Au가 증착된 기판을 열처리하여 Au dot를 형성하고 이의 morphology를 조절하여 최적의 나노와이어 합성조건을 선정하였다. 이로써 기판 morphology가 나노선의 성장및 형상에 영향을 준다는 사실을 알게 되었다. 이 사실은 In2O3기판을 사용하고 이의 표면거칠기를 열처리로 조절하므로써 역시 나노와이어의 성장을 촉진하는 방법을 찾아내었다. 또한 thermal evaporation공법은 source분말의 선택에 따라 다양한 소재를 제작가능하다는 결과를 제시하였다. 예를 들면 SiOx 층이 precoating된 chamber내에서 MgO 나노선을 합성하는 것과 동일한 조건으로 실험을 진행하면 Mg2SiO4 나노와이어가 형성된 것을 확인하였다. 또한 Sn과 MgB2 분말을 함께 적용할 경우 Sn tip을 가진 MgO 나노와이어를 얻을 수 있었다. 이는 Sn이 동시에 촉매의 역할을 하였기 때문일 것으로 추정된다. 한편 Sn과 Bi 혼합분말을 적용한 경우 Bi2Sn2O7 신소재 tip을 포함한 SnO2 나노와이어를 얻을 수 있었다. 이 경우 Bi원자가 적절한 촉매의 역할을 수행한 것으로 사료된다. Substrate의 가열공법에서는 Si wafer상에 각종 금속 즉 Au, Ag, Cu, Co, Mo, W, Pt, Pd등 초박막을 DC sputter 로 형성한후 annealing하는 기술을 사용하였다. 특기할 만한 것은 Co를 사용한 경우 나노와이어의 spring구조를 얻을 수 있었다는 점이다. MOCVD에 의하여는 Ga2O3및 Bi2O3 나노와이어를 비교적 저온에서 합성하였고 In2O3의 경우는 독특한 나노구조를 형성하였고 이의 결정학적 특성에 대하여 조사하였다.

• Bulletin of the Korean Chemical Society
• /
• v.19 no.11
• /
• pp.1211-1216
• /
• 1998

Bis(diethyldithiocarbamato)ioxomolybdenum(VI), cis-MoO2(S2CNEt2)2, 1, reacted with chlorotrimethylsilane (Me33SiCl) to give a seven-coordinate, pentagonal bipyramidal complex MoOC12(S2CN]Et2)2, 3, in which the oxo ligand is trans to the chloride ligand and the two chloride ligands are mutually cis. The monooxo molybdenum complex bis(diethyidithiocarbamato)oxomolybdenum(IV), MoO(S2CNEt2)2, 2, reacted with phenyl isocyanate (PhNCO) to give an Mo dimer MO2{μ-N(CONPh)Ph}(μ-NPh)(NPh)2(S2CNEt2)2, 4, which contains an Mo-Mo bond, two diethyldithiocarbamato ligands, two terminal imido (NPh) ligands, and two bridging hnido (NPh) ligands. One of the two bridging NPh ligands seemed to have been attacked by the electrophilic phenyl isocyanate carbon, which suggests that the bridging imido NPh ligand is more nucleophilic than the terminal one. Crystallographic data for 3: monoclinic space group P21/c, a=8.908(l) Å, b=17.509(3) Å, c=12.683(2) Å, β=110.15(1)°, Z=4, R(wR2)=0.0611(0.1385). Crystallographic data for 4-THF: orthorhombic space group P212121, a=17.932(4) Å, b=22.715(5) Å, c=11.802(3) Å, Z=4, R(wR2)=0.0585(0.1286).