• Korean Journal of Mineralogy and Petrology
• /
• v.34 no.1
• /
• pp.1-14
• /
• 2021

The Unsang gold deposit has been one of the three largest deposits (Daeyudong, Kwangyang) in Korea. The geology of this deposit consists of series of host rocks including Precambrian metasedimentary rock and Jurassic Porphyritic granite. The deposit consists of Au-bearing quartz veins which filled fractures along fault zones in Precambrian metasedimentary rock and Jurassic Porphyritic granite, which suggests that it is an orogenic-type deposit. Quartz veins are classified as 1) galena-quartz vein type, 2) pyrrhotite-quartz vein type, 3) pyrite-quartz vein type, 4) pegmatic quartz vein type, 5) muscovite-quartz vein type and 6) simple quartz vein type based on mineral assembles. The studied quartz vein is pyrite-quartz vein type which occurs as sericitization, chloritization and silicification. The white mica from stylolitic seams of laminated quartz vein occurs as fine or medium aggregate associated with white quartz, pyrite, chlorite, rutile, monazite, apatite, K-feldspar, zircon and calcite. The structural formular of white mica from laminated quartz vein is (K0.98-0.86Na0.02-0.00Ca0.01-0.00Ba0.01-0.00 Sr0.00)1.00-0.88(Al1.70-1.57Mg0.22-0.09Fe0.23-0.10Mn0.00Ti0.04-0.02Cr0.01-0.00V0.00Ni0.00)2.06-1.95 (Si3.38-3.17Al0.83-0.62)4.00O10(OH2.00-1.91F0.09-0.00)2.00. It indicated that white mica of laminated quartz vein has less K, Na and Ca, and more Si than theoretical dioctahedral micas. Compositional variations in white mica from laminated quartz vein are caused by phengitic or Tschermark substitution [(Al3+)VI+(Al3+)IV <-> (Fe2+ or Mg2+)VI+(Si4+)IV] and direct (Fe3+)VI <-> (Al3+)VI substitution. The structural formular of chlorite from laminated quartz vein is((Mg1.11-0.80Fe3.69-3.14Mn0.01-0.00Zn0.01-0.00K0.07-0.01Na0.01-0.00Ca0.04-0.01Al1.66-1.09)5.75-5.69 (Si3.49-2.96Al1.04-0.51)4.00O10 (OH)8. It indicated that chlorite of laminated quartz vein has more Si than theoretical chlorite. Compositional variations in chlorite from laminated quartz vein are caused by phengitic or Tschermark substitution (Al3+,VI+Al3+,IV <-> (Fe2+ or Mg2+)VI+(Si4+)IV) and octahedral Fe2+ <-> Mg2+ (Mn2+) substitution. Therefore, laminated quartz vein and alteration minerals of the Unsan Au deposit was formed during ductile shear stage of orogeny.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.593-596
• /
• 1999

This paper presents a process optimization of antireflectiun (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a doble-layer AR(DLAR) coating of MgF$_2$/CeO$_2$, We investigated CeO$_2$ films as an All layer because they hale a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ film deposited at 400 $^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 7m to 1.1 7m. We achieved the efficiencies of solar cells greater than 15% with 3.12 % improvement with DLAR coatings . Further details on MgF$_2$, CeO$_2$ films, and cell fabrication Parameters are presented in this paper.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.636-639
• /
• 2004

We have synthesized a $Eu^{2{\cdot}}$ -activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$ yellow phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED chip. Three distinct emission bands from the GaN-based LED and the ($Sr_3MgSi_2O_8$:Eu + $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$:Eu) phosphor are clearly observed at 405nm, 455 nm and at around 540 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based ($Sr_3MgSi_2O_8$:Eu + $Ba^{2{\cdot}}$ co-doped $Sr_2SiO_4$:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• Journal of Korea Foundry Society
• /
• v.5 no.3
• /
• pp.19-26
• /
• 1985

This study has been carried out to examine into wettability of Cu-5%Sn alloy in $Al_2O_3$, MgO, $SiO_2$ and graphite, respectively and investigated into the change in macrostructure of Cu-5%Sn alloy according to kind and mixing rate of mold-coating. The results obtained from the experiment are summerized as follows; 1. Cu Cu-5%Sn alloy, wettabilities of $Al_2O_3$ and MgO were good, on the other hand, wettabilities of $SiO_2$ and graphite were bad. 2. The fine equiaxed zone was created because of the role of $Al_2O_3$ and MgO as preferential nucleation sites. 3. Notwithstanding change of mixing rate of $SiO_2$ in mold coating the equixed zone was not created. 4. The area of equiaxed zone was varied according to mixing rate in the case of using $Al_2O_3$ and MgO in mold-coating.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.10
• /
• pp.447-450
• /
• 2003

This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ deposited at 40$0^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4${\mu}{\textrm}{m}$ to 1.1${\mu}{\textrm}{m}$. We achieved the efficiencies of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details on MgF$_2$, CeO$_2$ films, and cell fabrication parameters are presented in this paper.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1996.05a
• /
• pp.54-54
• /
• 1996

• Journal of Korea Foundry Society
• /
• v.18 no.4
• /
• pp.364-372
• /
• 1998

Effects of Si and Ca additions on the mechanical properties of AM60 based Mg alloys have been investigated. Hardness of the AM60 based Mg alloys reached a maximum value after aging for approximately 33 hours but the amount of hardness increase was negligible. The poor age hardening response of the alloys was due to low Al content, which implies that Al content must be >6 wt.% to observe age hardening effect. The tensile and yield strength increased with increasing Al, Si, and Ca content but elongation decreased with increasing Al and Si content. The best mechanical properties obtained in AM 40-2.5Si-0.2Ca alloy after T4 heat treatment were as follows; tensile strength 193.4 MPa, yield strength 79.2 MPa, and elongation 11.2%. High temperature property obtained from creep test was also improved by introducing $Mg_2Si$ which has high hardness, high melting temperature and low thermal expansion coefficient.

• Resources Recycling
• /
• v.31 no.1
• /
• pp.3-11
• /
• 2022

Silicon is the most abundant metal element in the Earth's crust. Metallurgical-grade silicon (MG-Si) is an important metal that has wide industrial applications, such as a deoxidizer in the steelmaking industry, alloying elements in the aluminum industry, the preparation of organosilanes, and the production of electronic-grade silicon, which is used in the electronics industry as well as solar cells. MG-Si is produced industrially by the reduction smelting of silicon dioxide with carbon in the form of coal, coke, or wood chips in electric arc furnaces. MG-Si is purified by chemical treatments, such as the Siemens process. Most single-crystal silicon is produced using the Czochralski method. These smelting and refining methods will be helpful for the development of new recycling processes using secondary silicon resources.

• Journal of the Korean Ceramic Society
• /
• v.36 no.4
• /
• pp.410-416
• /
• 1999

The reactivity of three kinds of spinels which CaO-Al2O3-SiO2 slag was investigated in terms of mineral phases and microstructures. New crystal products were not formed by reaction of 12CaO.7Al2O3 in the slag with spinels and free MgO components was preferenctially dissolved into slag for MgO-rich spinel and stoichiometric spinel. Meanwhile mineral phase was changed from 12CaO.7Al2O3 to CaO.Al2O3 to CaO.2Al2O3 finally to CaO.6Al2O3 having high melting point for Al2O3 -rich spinel. The Fe-oxide component of the slag was taken up by only stoichiometric spinel grains within the spinel clinker and the trapped amount of Fe-oxide was independent of MgO content of MgO in spinel clinker the more th resistance to slag corrosion but the less resistance to slag penetration.

• Journal of the Korean Ceramic Society
• /
• v.23 no.5
• /
• pp.25-34
• /
• 1986

This study was to refined the crystal structure of solid solution to determine the position and amount of Al in diopside and to relate crystal structure changes and properties of solid solution. Single crystals of the solid solution in the system CaO.MgO.$2 SiO_2-Al_2O_3$ were made from the melt with slow cooling and used to refine the structure. The following were obtained. 1. Tetrahedra rotated around axis parallel to the direction which the angle 03-03-03 became small. 2. Tetrahedron became large and regular. Average T-O bond distance increased 0.53 percent. 3. M1 octahedron became small and average M1-O bond distance decreased 1.1 percent. 4, M2 polyhedron became small and average M2-O bond distance decreased 0.37 percent Polythedron was affected not so much compared with any cation site. 5. Distance between metal ions distances between T and oxygens which were coordinated with M2 and meighboring tetrahedron distances between M2 and oxygens which coordinated with M1 and M2 were not changed almost. 6. $Al^{3+}$ substituted 4Mg^{2+}$ and $Si^{4+}$