• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.138-142
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• 2000

Thin film $LiNbO_3$MFS (metal-ferroelectric-semiconductor) capacitor showed improved characteristics such as low interface trap density, low interaction with Si substrate, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for FRAM (ferroelectric random access memory) applications. RTA (rapid thermal anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60sec. We learned from X-ray diffraction that the RTA treated films were changed from amorphous to poly-crystalline $LiNbO_3$which exhibited (012), (015), (022), and (023) plane. Low temperature film growth and post RTA treatments improved the leakage current of $LiNbO_3$films while keeping other properties almost as same as high substrate temperature grown samples. The leakage current density of $LiNbO_3$films decreased from $10^{-5}$ to $10^{-7}$A/$\textrm{cm}^2$ after RTA treatment. Breakdown electric field of the films exhibited higher than 500 kV/cm. C-V curves showed the clockwise hysteresis which represents ferroelectric switching characteristics. Calculated dielectric constant of thin film $LiNbO_3$illustrated as high as 27.9. From ferroelectric measurement, the remanent polarization and coercive field were achieved as 1.37 $\muC/\textrm{cm}^2$ and 170 kV/cm, respectively.

• Applied Chemistry for Engineering
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• v.7 no.1
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• pp.34-42
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• 1996

Growth of synthetic emerald [($(BeO)_3(Al_{2-x}Cr_xO_3)(SiO_2)_6$] single crystals was carried out by flux method. In this study, the starting materials were prepared by stoichiometric mixing of BeO, $Al_2O_3$ and $SiO_2$ as reaching components. The conditions for the growth of synthetic emerald single crystals are as follows : temperature range ; $1150{\sim}900^{\circ}C$, cooling rate ; 2, 4, $10^{\circ}C/hr$, flux ; $Li_2CO_3$, $V_2O_5$, dopant ; $Cr_2O_3$. The sizes of $Cr_2O_3$emerald single crystals depending on 2, 4, $10^{\circ}C/hr$ cooling rates. The obtained emerald single crystal was characterized and the following results were obtained : lattice parameter : a=0.921nm, c=0.917nm, crystal system ; hexagonal, crystal size ; max. $0.80{\times}0.95mm^2(c{\times}m)$, orientation ; (1000), $m(10{\bar{1}}0)$.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.53-59
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• 1985

Nucleation and crystallization of $\beta$-eucryptite in a glass of molecular percentage composition Li2O.Al2O3.2SiO2 are studied. The glasses are made by quenching of the melts from 143$0^{\circ}C$ to room temperature. Heat-treatment for nucleation and crystal growth are caried out at various temperature in the range between 50$0^{\circ}C$ and 80$0^{\circ}C$ with different duration of time. The amounts of crystallization are estimated by the method of x-ray powder diffraction. As the results a time-temperature-transformation relation for crystallization is derived. The maximum rate of crystallization is observed at about 75$0^{\circ}C$ from the T-T-T-curve while the crystallization temperature is detected at 67$0^{\circ}C$ by DTA measurement. The crystallization temperature moved to 62$0^{\circ}C$ by adding 5 weight percents of TiO2 and it moved to 78$0^{\circ}C$ by adding 2 weight percents of V2O5. The crystallization temperature moved to 62$0^{\circ}C$ by adding 5 weight percent of TiO2 it moved to 78$0^{\circ}C$ by adding 2 weight percents of V2O5 The activation energy for crystallization from the pure glass is calculated as 68 Kcal/mol and it varied to 53 Kcal/mol and 110Kcal/mol when 5 weight percents of TiO2 and weight percents of V2O5 are added respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.413-413
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• 2011

최근 전기, 전자, 반도체 산업의 발전으로 전 고상 박막리튬전지는 초소형, 초경량의 마이크로 소자의 구현을 위한 고밀도 에너지원으로 각광받고 있다. 현재 양극박막은 대부분LCO(LiCoO2)계열이 이용되고 있으나, 코발트는 높은 가격과 인체 유해성 뿐만 아니라 상대적으로 낮은 용량(~140 mAh/g)등의 단점을 갖고 있어 향후 보다 고용량의 양극박막이 요구된다. 3원계 양극활물질 LiMO2(M=Co,Ni,Mn,etc.)은 우수한 충방전 효율 과 열적 안정성 뿐 아니라 277mAh/g의 높은 이론용량을 갖고 있어 고용량 양극박막으로의 적용시 고용량 박막이차전지 제작이 가능하다. 본 연구에서는 전 고상 박막 전지의 구현을 위하여 RF 스퍼터링법을 사용하여 Li[Li0.2Mn0.54Co0.13Ni0.13]O2 박막을 증착하였다. Li/MnCoNi의 몰 비율을 변화시켜 높은 전기화학적 특성을 갖는 분말을 합성하여 제조한 타겟으로 Pt/TiO2/SiO2/Si 기판위에 RF 스퍼터법을 이용하여 박막을 성장시켰다. 박막 증착 시 가스의 비율은 Ar:O2=3:1로 하고 증착 압력의 조절(0.005~0.02 torr)을 통하여 박막의 두께와 표면 특성을 조절하며 성장시켰다. 또한 박막을 다양한 온도에서($400{\sim}550^{\circ}C$) 열처리하여 결정화도와 전기화학적 특성을 측정하였다. 증착 된 박막의 구조적 특성은 X-ray diffraction(XRD) 과 scanning electron microscopy(SEM)로 관찰되었다. 박막의 전기화학적 특성 평가를 위하여 Cyclic voltammatry를 측정하여 가역성의 정도를 확인하고 WBC3000 battery cycler를 이용한 half-cell 테스트를 통하여 박막의 용량을 평가하였다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.85-91
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• 1999

$H:LiNbO_3$ optical modulator with Cu/parylene electrode layer, which has a merits in the bandwidth, power consumption and fabrication conditions as compared with conventional Au/Cr/$SiO_2$, is proposed and fabricated. Analysis and design of optical modulator is performed by finite element calculation. Various unit processes for fabricating the proposed modulator, 1550nm $H:LiNbO_3$ optical waveguide, parylene buffer layer, and CPW Cu electrode, were developed, After dicing and end-face polishing of fabricated modulator chip, optical modulation responses as sawtooth electrical driving voltage has been measured at low frequencies. Properties of optical waveguide had not been changed before and after Cu/parylene electrode processes, which make confirm the reproducible fabrication of optical modulator.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.765-770
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• 2001

Metal-ferroelectric-insulator- semiconductor(MFTS) devices by using rapid thermal annealed (RTA) LiNbO$_3$/AIN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor(MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2 V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/$\textrm{cm}^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8 V, 50 % duty cycle) in the 500 kHz.

• Journal of the Korean Electrochemical Society
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• v.17 no.4
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• pp.229-236
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• 2014

In this study, the method to improve the electrochemical performance of $LiFePO_4$ by carbon coating and morphology control into porous structure was studied. The synthesis of $LiFePO_4$ was done by coprecipitation method by two step procedure. In the first step $FePO_4$ precursor was synthesized by coprecipitation method, followed by impregnation of lithium into the precursor at $750^{\circ}C$. The carbon coating was done by both physical and chemical coating processes. Using the physical coating process, the amount of coating layer was 6% and the capacity achieved was 125 mAh/g. In case of chemical coating process, the active material delivered 130~140 mAh/g, which is about 40% improvement of delivered capacity compared to uncoated $LiFePO_4$. For the morphology control into porous structure, we added nano particles of $Al_2O_3$ or $SiO_2$ into the active materials and formed the nanocomposite of ($Al_2O_3$ or $SiO_2$)/$LiFePO_4$. Between them, $SiO_2/LiFePO_4$ porous nanocomposite showed larger capacity of 132 mAh/g.

• Transactions on Electrical and Electronic Materials
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• v.15 no.2
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• pp.73-76
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• 2014

$Pt/Al_2O_3/La_2Si_5O_x/SiO_2/Si$ charge trap memory capacitors were prepared, in which the $La_2Si_5O_x$ film was used as the charge trapping layer, and the effects of post annealing atmospheres ($NH_3$ and $N_2$) on their memory characteristics were investigated. $La_2O_3$ nanocrystallites, as the storage nodes, precipitated from the amorphous $La_2Si_5O_x$ film during rapid thermal annealing. The $NH_3$ annealed memory capacitor showed higher charge storage performances than either the capacitor without annealing or the capacitor annealed in $N_2$. The memory characteristics were enhanced because more nitrogen was incorporated at the $La_2Si_5O_x/SiO_2$ interface and interfacial reaction was suppressed after the $NH_3$ annealing treatment.

• Analytical Science and Technology
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• v.6 no.3
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• pp.275-282
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• 1993

A direct and simultaneous method to determine the $SiO_2$ and $ZrO_2$ in zircon sand of raw mineral and its treated one were studied by optical emission spectrometer using DC arc source. The synthetic standard was prepared by mixing with pure metal oxide, and it was diluted with buffer(graphite) and flux($Li_2B_4O_7$). The mixing ratio of buffer and flux and its dilution ratio to sample was investigated in order to choose the best excitation conditions. The optimum mixing and dilution ratios were 0.22:1 and 40, and the standard deviations of analytical results were 1.9% for $SiO_2$ and 4.7% for $ZrO_2$.

• Korean Journal of Materials Research
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• v.9 no.9
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• pp.896-899
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• 1999

A carbon dioxide gas sensor was studied as a function of temperature and $CO_2$concentration in the Li$_2$ZrO$_3$ system. Lithium zirconate(Li$_2$ZrO$_3$) was synthesized by the heat-treatment of zirconia(ZrO$_2$)and Lithium carbonate(Li$_2$CO$_3$). The specimens were prepared both as bulk disk, 10mm in diameter and 1.0mm thickness, and thick films on an alumina substrate. Lithium zirconate readily responded to $CO_2$concentration from 0.1% to 100% in the range of 45$0^{\circ}C$ to $650^{\circ}C$. The sensitivity to $CO_2$ was dependent on the measuring temperature. Lithium zirconate(Li$_2$ZrO$_3$) decomposes into Li$_2$CO$_3$ and ZrO$_2$after the reaction with $CO_2$in the range of 45$0^{\circ}C$ to $650^{\circ}C$. Li$_2$CO$_3$ changes into Li$_2$O and $CO_2$ above $650^{\circ}C$. The material showed difficulty with reversibility and recovery. The optimum temperature for the highest sensitivity is around 55$0^{\circ}C$.