• Journal of Powder Materials
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• v.23 no.5
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• pp.379-383
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• 2016

A thick film of $Li_7La_3Zr_2O_{12}$ (LLZO) solid-state electrolyte is fabricated using the tape casting process and is compared to a bulk specimen in terms of the density, microstructure, and ion conductivity. The final thickness of LLZO film after sintering is $240{\mu}m$ which is stacked up with four sheets of LLZO green films including polymeric binders. The relative density of the LLZO film is 83%, which is almost the same as that of the bulk specimen. The ion conductivity of a LLZO thick film is $2.81{\times}10^{-4}S/cm$, which is also similar to that of the bulk specimen, $2.54{\times}10^{-4}S/cm$. However, the microstructure shows a large difference in the grain size between the thick film and the bulk specimen. Although the grain boundary area is different between the thick film and the bulk specimen, the fact that both the ion conductivities are very similar means that no secondary phase exists at the grain boundary, which is thought to originate from nonstoichiometry or contamination.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.219-223
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• 2000

All-solid state lithium rechargeable thin film batteries were fabricated with the configuration of$Cu_{0.5}V_2O_5/Lipon/Li$ using sequential thin film techniques. Copper vanadium oxide thin films and Lipon thin films were prepared by DC reactive dual source magnetron sputtering and RF magnetron sputtering, respectively. According to XRD analysis, we found out that copper vanadium oxide thin films were amorphous. The electrochemical behaviour of them was examined in half cell system using EC : DMC(1:1 in IM $LiPF_5$) liquid electrolyte. The ionic conductivity of Lipon thin film was $1.02\times10^{-6}S/cm$ at $25^{\circ}C$ and $Cu_{0.5}V_2O_5/Lipon/Li$ cell showed that the discharge capacity was about $50{\mu}Ah/cm^2{\mu}m$ beyond 500cyc1es.

• Journal of Hydrogen and New Energy
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• v.14 no.1
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• pp.46-52
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• 2003

유황 양 전극과 액체 전해질, 리튬 금속을 음극으로 사용한 리튬 유황 전지를 제조하여 그 특성을 조사하였다. 유황 전극은 유황파우더와 carbon black 을 도전재로, 그리고 바인더로 PVdF를 사용하여 제조하였다. 이렇게 제조된 셀은 두개의 다른 전압 구간에서 충방전 실험을 행하였다. 첫 번째 셀은 $S_8+{\chi}Li{\leftrightarrow}Li_2S_x(X=4{\sim}12)$ 반응만을 일어나 게 하기 위하여 2.1V 와 2.5V 사이에서, 그리고 두 번째 셀은 $Li_2S_x+{\chi}Li{\leftrightarrow}Li_2S(x=2{\sim}4)$의 반응만을 일어나게 하기 위하여 1.5V 와 2.5V 에서 충방전 하였다. 그 결과 첫 번째 셀이 더 좋은 싸이클 특성을 가지는 것을 확인 탈 수 있었다. 각 전압구간에서 각 셀이 충방전 되는 동안, 전해질 내로 녹아난 유황의 양은 큰 차치가 없는 것을 확인하였다. 그리고, 전압에 따른 전극의 임피던스를 측정한 결과, 방전이 끝난 후 큰 저항성분이 새로 생긴 것을 확인 할 수 있었다. 이는 사이클이 진행된 후의 전극표면을 SEM 분석을 행한 결과로부터 사이클이 진행된 후 전극 표면에 최종 반응 산물인 $Li_2S$ 가 피막형태로 형성된것을 확인 할 수 있었다.

• 한국전기화학회:학술대회논문집
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• 2000.04a
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• pp.36-36
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• 2000

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.7 no.2
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• pp.196-206
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• 1995

Experimental investigations on heat and mass transfer characteristics in a vertical tube absorber have been carried out. Three different copper tubes with a length of 1.5m have been tested using LiBr solution and LiBr-$CaCl_2$ solution. The effects of solution flow rate, cooling water temperature, solution inlet temperature and evaporation temperature have been investigated in detail. It is found that heat transfer coefficient increases gradually with the increase of solution flow rate, but decreases rapidly for the flow rates less than 0.02kg/ms. The grooved tube generally shows better heat transfer performances than the smooth tube. LiBr solution shows almost no absorption capability for the cooling water temperatures over $40^{\circ}C$. LiBr-$CaCl_2$ gives less decreasing rate in absorption capability at these temperatures and the heat transfer coefficient becomes less dependent on the types of tubes in use. Considering heat and mass transfer rates, LiBr-$CaCl_2$ solution is found to be more suitable than LiBr solution for air cooled absorber, which operates at higher temperature than water cooled absorber.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1313-1318
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• 2006

The mechanism fur the surface film formation was studied by in situ Atomic Force Microscopy (AFM) observation of a highly oriented pyrolytic graphite (HOPG) basal plane surface during cyclic voltammetry at a slow scan-rate of 0.5 mV $s^{-1}$ in 1 moi $dm^{-3}$ (M) $LiPF_6$ dissolved in a mixture of ethylene carbonate (EC) and diethyl carbonate (DEC). Decomposition of the electrolyte solution began at a potential around 2.15 V vs. $Li^+$/Li on step edges. In the potential range 0.95-0.8 V vs. $Li^+$/Li, flat areas (hill-like structures) and large swelling appeared on the surface. It is considered that these two features were formed by the intercalation of solvated lithium ions and their decomposition beneath the surface, respectively. At potentials more negative than 0.80 V vs. $Li^+$/Li, particle-like precipitates appeared on the basal plane surface. After the first cycle, the thickness of the precipitate layer was 30 nm. The precipitates were considered to be decomposition of the lithium salt ($LiPF_6$) and solvent molecules (EC and DEC), and to have an important role in suppressing further solvent decomposition on the basal plane.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.21-24
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• 1997

Ferroeletric LiNbO$_3$ thin films hale been prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. As-deposited films were performed RTA(Rapid Thermal Annealing) treatment in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric LiNbO$_3$ film was increased from a typical vague of 1~2$\times$10$^{8}$ $\Omega$.cm before the annealing to about 1$\times$10$^{13}$ $\Omega$.cm at 500 kV/cm and reduce the interface state density of the LiNbO$_3$/Si(100) interface to about 1$\times$10$^{11}$ cm$^2$ . eV. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization (Pr) and coercive field (Ec) values of about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.58.3-58
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• 1998

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.63-66
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• 1998

Prototype MFSFET′s using ferroelectric oxide LiNbO$_3$ as a gate insulator have been successfully fabricated with the help of 2 sheets of metal masks and demonstrated nonvolatile memory operations of the MFSFET′s. The estimated field-effect electron mobility and transconductance on a linear region of the fabricated FET were 600 $\textrm{cm}^2$/V.s and 0.16 mS/mm, respectively. The drain current of the "on" state was more than 4 orders of magnitude larger than the "off" state current at the same "read" gate voltage of 0.5 V, which means the memory operation of the MFSFET. A write voltage as low as $\pm$3 V, which is applicable to low power integrate circuits, was used for polarization reversal.

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.293-300
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• 2005

ZnO:Li epilayers were synthesized on sapphire substrates by the pulesd laser deposition (PLD) after the surface of the ZnO:Li sintered pellet was irradiated by the ArF (193 nm) excimer laser. The growth temperature was fixed at $400^{\circ}C$. The crystalline structure of epilayers was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of epilayers measured by van der Pauw-Hall method are $2.69\times10cm^{-3}$ and $52.137cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of epilayers obtained from the absorption spectra is well described by the Varshni's relation, $E_g(T)=3.5128eV{\cdot}(9.51\times10^{-4}eV/K)T^2/(T+280K)$. After the as-grown ZnO:Li epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO:Li has been investigated by PL at 10 K. The Peaks of native defects of $V_{zn},\;V_o,\;Zn_{int},\;and\;O_{int}$ showned on PL spectrum are classified as a donors or accepters type. We confirm that $ZnO:Li/Al_2O_3$ in vacuum do not form the native defects because ZnO:Li epilayers in vacuum existe in the form of stable bonds.