• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.389-392
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• 2009

Metal oxides have been proposed as an alternative channel material to hydrogenated amorphous silicon in thin film transistors (TFTs) because their higher mobility and stability make them suitable for transistor active layers. Thin films of indium zinc oxide (IZO) were deposited using a High Target Utilization Sputtering (HiTUS) system on various dielectrics, some of which were also deposited with the HiTUS. Investigations into bottom-gated IZO TFTs have found mobilities of 8 $cm^2V\;^1s^{-1}$ and switching ratios of $10^6$. There is a variation in the threshold voltage dependent on both oxygen concentration, and dielectric choice. Silica, alumina and silicon nitride produced stable TFTs, whilst hafnia was found to break down as a result of the IZO.

• 한국재료학회지
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• 제33권6호
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• Nano
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• 제13권10호
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• pp.1850124.1-1850124.12
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• 2018

$TiO_2$ films were deposited from oxygen/titanium tetraisopropoxide (TTIP) plasmas at low temperature by Helicon-PECVD at floating potential ($V_f$) or substrate self-bias of -50 V. The influence of titanium precursor partial pressure on the morphology, nanostructure and optical properties was investigated. Low titanium partial pressure ([TTIP] < 0.013 Pa) was applied by controlling the TTIP flow rate which is introduced by its own vapor pressure, whereas higher titanium partial pressure was formed through increasing the flow rate by using a carrier gas (CG). Then the precursor partial pressures [TTIP+CG] = 0:027 Pa and 0.093 Pa were obtained. At $V_f$, all the films exhibit a columnar structure, but the degree of inhomogeneity is decreased with the precursor partial pressure. Phase transformation from anatase ([TTIP] < 0.013 Pa) to amorphous ([TTIP+CG] = 0:093 Pa) has been evidenced since the $O^+_2$ ion to neutral flux ratio in the plasma was decreased and more carbon contained in the film. However, in the case of -50 V, the related growth rate for different precursor partial pressures is slightly (~15%) decreased. The columnar morphology at [TTIP] < 0.013 Pa has been changed into a granular structure, but still homogeneous columns are observed for [TTIP+CG] = 0:027 Pa and 0.093 Pa. Rutile phase has been generated at [TTIP] < 0:013 Pa. Ellipsometry measurements were performed on the films deposited at -50 V; results show that the precursor addition from low to high levels leads to a decrease in refractive index.

• 반도체디스플레이기술학회지
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• 제17권4호
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• pp.66-69
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• 2018

This study was researched the electrical properties of semiconductor devices such as ITO, $SiO_2$, $V_2O_5$ thin films. The films of ITO, $SiO_2$, $V_2O_5$ were deposited by the rf magnetron sputtering system with mixed gases of oxygen and argon to generate the plasma. All samples were cleaned before deposition and prepared the metal electrodes to research the current-voltage properties. The electrical characteristics of semiconductors depends on the interface's properties at the junction. There are two kinds of junctions such as ohmic and schottky contacts in the semiconductors. In this study, the ITO thin film was shown the ohmic contact properties as the linear current-voltage curves, and the electrical characteristics of $SiO_2$ and $V_2O_5$ films were shown the non-linear current-voltage curves as the schottky contacts. It was confirmed that the electronic system with schottky contacts enhanced the electronic flow owing to the increment of efficiency and increased the conductivity. The schottky contact was only defined special characteristics at the semiconductor and the interface depletion layer at the junction made the schottky contact which has the effect of leakage current cutoff. Consequently the semiconductor device with shottky contact increased the electronic current flow, in spite of depletion of carriers.

• Bulletin of the Korean Chemical Society
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• 제35권5호
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• pp.1356-1364
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• 2014

A new conjugated copolymer, poly{4,8-bis(triisopropylsilylethynyl)benzo[1,2-b:4,5-b']dithiophene-alt-4,7- bis(5-thiophen-2-yl)-5,6-difluoro-2-(heptadecan-9-yl)-2H-benzo[d][1,2,3]triazole} (PTIPSBDT-DFDTBTz), is synthesized by Stille coupling polycondensation. The synthesized polymer has a band gap energy of 1.9 eV, and it absorbs light in the range 300-610 nm. The hole mobility of a solution-processed organic thin-film transistor fabricated using PTIPSBDT-DFDTBTz is $3.8{\times}10^{-3}cm^2V^{-1}s^{-1}$. Bulk heterojunction photovoltaic cells are fabricated, with a conventional device structure of ITO/PEDOT:PSS/polymer:$PC_{71}BM$/Ca/Al ($PC_{71}BM$ = [6,6]-phenyl-$C_{71}$-butyric acid methyl ester); the device shows a power conversion efficiency (PCE) of 2.86% with an open-circuit voltage ($V_{oc}$) of 0.85 V, a short-circuit current density ($J_{sc}$) of 7.60 mA $cm^{-2}$, and a fill factor (FF) of 0.44. Inverted photovoltaic cells with the structure ITO/ethoxylated polyethlyenimine/ polymer:$PC_{71}BM/MoO_3$/Ag are also fabricated; the device exhibits a maximum PCE of 2.92%, with a $V_{oc}$ of 0.89 V, a $J_{sc}$ of 6.81 mA $cm^{-2}$, and an FF of 0.48.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• Macromolecular Research
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• 제12권2호
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• pp.156-171
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• 2004

We describe the precision synthesis schemes of siloxane-containing polymers, i.e., the control of their molecular weight, stereoregularity, and higher-order structures. First, we found a new catalytic dehydrocoupling reaction of water with bis(dimethylsilyl)benzene to give poly(phenylene-disiloxane). Together with this reaction, we applied hetero-condensations to the synthesis of thermally stable poly(arylene-siloxane)s. The dehydrocoupling reaction was applied to the synthesis of syndiotactic poly(methylphenylsiloxane) and poly(silsesquioxane)s, which we also prepared by hydrolysis and deaminative condensation reactions. We discuss the tendency for loop formation to occur in the synthesis of poly(silsesquioxane) by hydrolysis, and provide comments on the design of functionality of the polymers produced. By taking advantage of the low energy barrier to rotation in the silicon-oxygen bond, we designed selective oxygen-permeable membrane materials and liquid crystalline materials. The low surface free energy of siloxane-containing systems allows surface modification of a blend film and the design of holographic grating materials.

• 전기화학회지
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• 제19권3호
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• pp.69-79
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• 2016

높은 에너지 밀도를 지닌 리튬 이온 전지는 현재 리튬 이온 전지에 상용화된 음극 활물질인 천연 흑연의 보다 높은 율 별 특성과 안정한 장수 명 특성을 요구하고 있다. 천연 흑연계 음극 활물질을 이용하여 리튬 전지 음극을 제작하여, SEI 피막의 형성 및 제어의 대표적인 전해질 첨가제인 VC (vinylene carbonate), VEC (vinyl ethylene carbonate), FEC (fluoroethylene carbonate)등의 다양한 첨가제를 사용하여 초기 반응에 의해 생성되는 SEI 피막을 분석하고 이에 따른 전기 화학 특성 변화를 측정하기 위하여 SEM, EVS (electorochemical voltage spectroscopy), 피막 분석, EIS (electrochemical impedance spectroscopy), FT-IR (Fourier transform infrared spectroscopy)등을 측정하여, 고온 수명 평가, 용량 유지율 및 성능 평가를 실시하여, $0^{\circ}C$ 수명특성 이후의 음극에 대한 분석을 비교 및 분석 평가 하였다. 초기 충전 시 profile에서 SEI의 형성에 의한 변화를 나타냈으며, EVS를 통하여 No-Additive가 약 0.9 V에서 SEI의 형성이 이루어지지만, VC, VEC, FEC의 경우 1 V 이상에서 형성반응이 이루어졌다. $60^{\circ}C$ 수명특성평가에서 초기 효율은 No-Additive가 가장 높게 나타나며 용량 유지율이 높게 나타났으나, cycle이 진행 될수록 충전 시 용량과 효율이 감소하여 VC, FEC보다 용량 유지율이 낮아졌고, VEC는 효율 및 용량 유지율 모두 성능이 가장 낮게 나타났다. SEM을 통하여 SEI의 변화를 확인할 수 없었지만, FT-IR을 통하여 SEI의 성분이 cycle이 진행이 될수록 첨가제에 의해 $2850-2900cm^{-1}$영역의 Alkyl carbonate ($RCO_2Li$) 계열의 성분이 더욱 견고하게 유지되는 것을 확인하였으며, EIS를 통하여 cycle이 진행될수록 저항은 증가하는 것으로 나타났고, 특히 No-Additive 및 VEC의 SEI에 의한 저항이 매우 커졌다는 것을 알 수 있었다.

• 한국자기학회지
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• 제17권2호
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• pp.51-54
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• 2007

역스피넬 산화물 $Fe_3O_4$에 Cr을 치환하여 얻어지는 $Cr_xFe_{3-x}O_4$ 박막 시료들을 졸-겔 스핀코팅 방법을 이용하여 제작하고 그 구조적, 전자기적 특성들에 대한 측정 및 분석을 수행하였다. X선 회절 측정 결과, Cr 성분비가 증가함에 따라 격자상수가 소폭 감소하는 것이 관측되었다. 이는 Fe 이온에 비해 이온반경이 상대적으로 작은 Cr 이온이 +3의 이온수를 가지고 8면체 자리를 치환하는 것으로 설명 가능하다. 시료들에 대한 진동시료자화를 측정한 결과, Cr 성분비 증가에 따라 포화자화량이 $Fe_3O_4$에 비하여 점차적으로 감소하였는데, 이는 8면체 자리의 $Fe^{3+}(d^5)$와 $Cr^{3+}(d^3)$ 나타내는 스핀 자기능률 값의 비교를 통하여 설명 가능하다. 또한, 자기저항 효과도 Cr 성분비 증가에 따라 포화자화량과 유사한 추세로 감소하였다. $Cr_xFe_{3-x}O_4$ 박막 시료들의 보자력은 Cr 성분비 증가에 따라 증가함을 보였는데, 이는 $Cr^{3+}$ 이온의 8면체 자리 치환에 따른 자기 이방성의 증가에 기인하는 것으로 해석된다.

• 한국의학물리학회지:의학물리
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• 제20권2호
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• pp.88-96
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• 2009

최근 토모테라피의 빗면 조사 빔(tangential beam)을 이용하여 전자 빔과 광자 빔의 인접 조사 없이도 치료에 필요한 선량을 균일하게 전달할 수 있다는 결과가 보고되면서, 토모테라피를 이용한 피부암 치료가 증가하고 있다. 그러나 토모테라피 치료 빔은 선형가속기 빔과는 다른 물리적인 특성을 갖고 있으며, 여러 가지 동적 요소들이 결합되어 빔을 조사하므로 기존에 사용하고 있는 팬톰 이외의 독립적인 도구를 사용하여 피부 선량을 검증할 필요가 있다. 피부 선량 검증을 위하여 영상 기반 치료용 팬톰에 선량 측정 기능을 추가한 새로운 팬톰을 개발하였으며, 열형광선량계(LiF, TLD-100)와 GafChromic EBT필름을 팬톰에 삽입하여 전달된 피부 선량을 측정하였다. 팬톰의 반지름 방향으로 피부 영역을 포함하여 깊이 35 mm 영역까지 균일한 선량을 전달했을 때, 필름으로 측정한 특정 점에서의 선량은 계산 선량에 대하여 평균 약 2% 정도 낮게 나타났으며 처방 선량보다 최대 ${\pm}14%$까지 더 높거나 낮은 선량이 전달된 영역이 나타나는 것을 확인 할 수 있었다. 치료 계획 시스템의 계산 결과와 비교하였을 때, 조사 영역에서 측정한 선량 분포의 균일성이 감소하였으며 팬톰 내에 삽입한 테플론에 의한 선량 변화는 거의 나타나지 않았다. 토모테라피의 치료 빔을 이용하여 피부암과 같이 굴곡이 있는 낮은 깊이에 위치한 표적에 선량을 전달하는 경우, 연속적으로 회전하며 조사되는 빗면 조사 빔의 특성과 치료 계획 시스템의 선량 계산 방식에 따라서 피부 선량의 오차가 허용 범위보다 더 크게 나타날 수 있으므로 치료전 측정을 통한 피부 선량 검증이 필요하다.