• Journal of the Korean Ceramic Society
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• v.38 no.2
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• pp.112-116
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• 2001

고상반응법에 의한 제조한 ZnGa$_2$O$_4$형광체에 Li 및 Tm 원소를 도핑함에 따른 발광특성을 조사하였다. 254nm 여기 하에서, 환원 처리된 ZnGa$_2$O$_4$형광체는 245nm에서 흡수피크와 380nm에서 발광피크를 나타내며, 이는 스피넬 구조에서 Ga$^{3+}$ 이온의 $^4$T$_2$$\longrightarrow$$^4$A$_2$천이에 기인한다. ZnGa$_2$O$_4$형광체에 있어서 Li 및 Tm을 도핑했을 경우가 도핑하지 않은 시료에 비해 발광강도 및 색순도가 개선되었으며, Li 및 Tm을 각각 0.1 mol, 0.01 mol 첨가했을 때 가장 우수한 발광강도 및 색순도 특성을 보였다.

• New Physics: Sae Mulli
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• v.68 no.11
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• pp.1196-1202
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• 2018

$Li_2Sr_{1-x}Eu_xSiO_{4-{\alpha}}N_{\alpha}$ ($Li_2SrSiO_{4-{\alpha}}N_{\alpha}:Eu^{2+}$) phosphors were synthesized by using a solid state reaction (SSR) method with submicron $Si_3N_4$ and nano $Si_3N_4$ powders as the sources of Si and N, and the optical properties of those phosphors were studied. The studied phosphors showed efficient excitation characteristics over the broad range from 230 to 530 nm. Also, They showed broad emission spectra covering a range from 500 to 700 nm, with a peak at 568 nm, which was shifted longer wavelength by 18 nm as compared with that of commercial $YAG:Ce^{3+}$. Combined with a 450 nm blue LED chip, the results support the application of the $Li_2SrSiO_{4-{\alpha}}N_{\alpha}:Eu^{2+}$ phosphor as a luminescent material for a white-light source thaat is warmer than the commercial $YAG:Ce^{3+}$ white-light source. In addition, the $Li_2SrSiO_{4-{\alpha}}N_{\alpha}$ phosphors prepared from a submicron $Si_3N_4$ powder was found to emit a previously unreported self-activated luminescence in $Li_2SrSiO_{4-{\alpha}}N_{\alpha}$.

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.10-15
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• 2006

Photoluminescence (PL) and crystal structures of the $(l-x)CaWO_4-xLi_2WO_4$ binary system added with $Eu_2O_3$ activator have been characterized. The $CaWO_4\;and\;Li_2WO_4$ have the scheelite and phenakite structures respectively. The $CaWO_4-Li_2WO_4-Eu_2O_3$ phosphors show the red luminescence of 613 nm peak wavelength. The wavelength range of excitation spectral band is $380\~470$ nm with the peak wavelength of 397 nm. The $0.88(0.5CaWO_4-0.5Li_2WO_4)-0.12Eu_2O_3$ showed the most superior luminescence characteristics. The effect of co-doping elements such as $Al_2O_3$ and rare-earth oxides on PL has been characterized. The co-doping elements deteriorated the luminescence intensity except the $Al_2O_3$ and $Gd_2O_3$. The PL characteristics of $CaWO_4-Li_2WO_4-Eu_2O_3$ phosphors have been compared to those of the alkali europium double molybdates (tungstates) of scheelite-related structure such as $LiEu(MoO_4)_2$ and $CsEu(MoO_4)_2$. The crystal structures of $(l-y)[(l-x)CaWO_4-xLi_2WO_4]-yEu_2O_3$ phosphors have been characterized using XRD data and rietveld refinement.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.43-45
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• 2001

For photosensitive and micro-structuring in $Li_2O-A1_2O_3-SiO_2$glasses by laser treatment, Nd:YAG laser in 355 nm and 1064 nm wavelength was irradiated to the glass to investigate fracture characterization and optical changes. The fractured glass surfaces irradiated by 1064 nm laser was observed by Scanning Electron Microscope(SEM) and optical microscope, and optical changes caused by 355 nm later was identified from absorption spectra. In this study, it could be expected that the laser treatment technology will be utilized for 3-dimensional micro-structure, internal waveguide, optical memory by optical absorption changes in glass matrix.

• Korean Journal of Optics and Photonics
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• v.4 no.2
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• pp.200-205
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• 1993

We generated the second harmonic of Ti:sapphire laser in LiI$O_3$ and BBO crystals. Two LiI$O_3$, crystals and a BBO crystal were used, and the lengths of LiI$O_3$ crystals were 5, 10 mm and that of BBO was 7 mm. We measured the conversion efficiencies of LiI$O_3$ and BBO in the wavelength range of 780-810 nm, and compared with the caculation of theory. The measured second harmonic conversion coefficients were (1.06${\pm}0.05){\times}10^4\;W^1$(10mm), (5.28${\pm}0.33){\times}10^5\;W^1$(5mm), and (2.96${\pm}0.05){\times}10^5\;W^1$(BBO, 7 mm) at the fundamental wavelength of 794 nm.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.379-383
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• 2011

This paper presents the synthesis of one-dimensional spinel $LiMn_2O_4$ nanostructures using a facile and scalable two-step process. $LiMn_2O_4$ nanorods with average diameter of 100 nm and length of 1.5 ${\mu}m$ have been prepared by solid-state lithiation of hydrothermally synthesized ${\beta}$-$MnO_2$ nanorods. $LiMn_2O_4$ nanowires with diameter of 10 nm and length of several micrometers have been fabricated via solid-state lithiation of ${\beta}$-$MnO_2$ nanowires. The precursors have been lithiated with LiOH and reaction temperature and pressure have been controlled. The complete structural transformation to cubic phase and the maintenance of 1-D nanostructure morphology have been evaluated by XRD, SEM, and TEM analysis. The size distribution of the spinel $LiMn_2O_4$ nanorods/wires has been similar to the $MnO_2$ precursors. By control of reaction pressure, cubic 1-D spinel $LiMn_2O_4$ nanostructures have been fabricated from tetragonal $MnO_2$ precursors even below $500^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.147-147
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• 2015

The multilayer structure of the organic light emitting diode has merits of improving interfacial characteristics and helping carriers inject into emission layer and transport easier. There are many reports to control hole injection from anode electrode by using transition metal oxide as an anode buffer layer, such as V2O5, MoO3, NiO, and Fe3O4. In this study, we apply thin films of LiF which is usually inserted as a thin buffer layer between electron transport layer(ETL) and cathode, as an anode buffer layer to reduce the hole injection barrier height from ITO. The thickness of LiF as an anode buffer layer is tested from 0 nm to 1.0 nm. As shown in the figure 1 and 2, the luminous efficiency versus current density is improved by LiF anode buffer layer, and the threshold voltage is reduced when LiF buffer layer is increased up to 0.6 nm then the device does not work when LiF thickness is close to 1.0 nm As a result, we can confirm that the thin layer of LiF, about 0.6 nm, as an anode buffer reduces the hole injection barrier height from ITO, and this results the improved luminous efficiency. This study shows that LiF can be used as an anode buffer layer for improved hole injection as well as cathode buffer layer.

• Journal of the Korean Society of Radiology
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• v.9 no.3
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• pp.169-174
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• 2015

$LiGd_9(SiO_4)_6O_2:Ce^{3+}$ phosphors were synthesized by solid-state reaction method. The structural characteristic was investigated by X-ray powder diffraction analysis. The emission and excitation spectra of the $Ce^{3+}$ ions doped $LiGd_9(SiO_4)_6O_2$ phosphors were obtained under the UV excitation. The emission spectra of $LiGd_9(SiO_4)_6O_2:Ce^{3+}$ shows the band at 410 nm corresponding to the $^2F_{5/2}$ and $^2F_{7/2}$ states of $Ce^{3+}$. The red shift of $Ce^{3+}$ emission is found as the $Ce^{3+}$ concentration increases, which could be explained by the change in crystal-field symmetry and strength with increasing $Ce^{3+}$ concentration. Fluorescence decay time of $Ce^{3+}$ was about 20 ns. When the concentration of $Ce^{3+}$ increases life time was slightly reduced.

• Korean Journal of Optics and Photonics
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• v.10 no.5
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• pp.391-395
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• 1999

We present the measurement of the diffraction efficiency and response time of the photorefractive grating recorded in $LiNbO_3$ photorefractive crystal doped with 4%-mole MgO. Two laser sources were used in the experiments; frequency-doubled Q-switched Nd:YAG laser ($\lambda$=532 nm) and cw Ar-ion laser ($\lambda$=514.5 nm). The same optical geometry was also used in both experiments in order to maintain the experimental consistency. Using the two-wave mixing scheme in both experiments we measured the maximum diffraction efficiency in the range of beam intensity of 1.6~100 W/ $\textrm{cm}^2$, and the response times for both cases of recording and erasing. Two sets of results obtained from the experiments are compared and analyzed.

• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.35-39
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• 2003

This paper is contents on the orthorhombic crystalline calcined by the solid phase method with LiMnO$_2$ thin film structured as the result which an average pore diameter of power was 132.3${\AA}$ in porosity analysis. Voltage ranges are able to get the properties of charge and discharge for experimental results of LiMnO$_2$ thin film were 2.2V 4.3V. The current density and scan speed were 0. 1㎃/$\textrm{cm}^2$ and 0.2㎷/sec respectively. Properties of the charge and discharge are obtained by optimum experiment condition parameters. Li dense ratio of the LiMnO$_2$ thin film that discharged capacities were 87㎃h/g have been 96.9［ppm］ at 670.784［nm］ wavelength. The dense ratio of Mn analyzed to 837［ppm］ at 257.610［nm］ wavelength. It can be estimated the quality of the LiMnO$_2$ thin film as that the wrong LiMnO$_2$ thin film pulled up from cell of electrolyte and became dry it at 800$^{\circ}C$. The results of SEM and XRD were the same as that of original researchers.