• 제목/요약/키워드: $LiNbO_3$Waveguide

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초고속 광통신용 5Gbps 급 Ti:LiNbO$_3$ Mach-Zehnder interferometric 광변조기 개발 (Development of 5Gbps Ti:LiNbO$_3$ Mach-Zehnder Interferometric Optical Modulator for High-speed Optical Communications)

  • 김성구;윤형도;윤대원;유용택
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.477-479
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    • 1997
  • The preparation of mach-zehnder inteferometric optical modulator and the properties of electrode and modulation bandwidth for high speed optical communications were described. The results of fabricated optical modulator was that optical 3-dB bandwidth 4.7GHz, driving voltage 6V and fiber-waveguide-fiber insertion loss 4.5dB for TM mode respectively.

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Ti 두께에 따른 Ti:LiNbO$_3$광도파로 특성 및 손실분석 (Loss Analysis and Preparation of Ti:LiNbO$_3$Optical Waveguide as a Function of Ti Thickness)

  • 정운조;김성구;정용근;강병모;조재철;박계춘;이진;유용택
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.425-427
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    • 1997
  • Ti:LiNbO$_3$optical waveguides were fabricated as a function of Ti thickness and pigtailed with polarization maintaining fiber(PMF). The near field patterns and total insertion loss of these sample was showed and measured for optical wavelength 1550nm. The fiber-to-waveguide coupling loss was described also .

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LiNbO3 integrated optic devices with an UV-curable polymer buffer layer

  • Jeong, Woon-Jo;Kim, Seong-Ku;Park, Gye-Choon;Lee, Jin
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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    • pp.111-118
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    • 2002
  • A new lithium niobate optical modulator with a polymer buffer layer on Ni in-diffused optical waveguide is proposed for the fist time, successfully fabricated and examined at a wavelength of 1.3 mm. By determining the diffusion parameters of Ni in-diffused waveguide to achieve more desirable mode size which is well matched to the mode in the fiber, the detailed results on the achievement of high optical throughput are reported. In addition, the usefulness of polymer buffer layer which can be applicable to a buffer layer in Ni in-diffused waveguide devices is demonstrated. Several sets of channel waveguides fabricated on Z-cut lithium niobate by Ni in-diffusion were obtained and on which coplanar traveling-wave type electrodes with a polymer-employed buffer layer were developed by a conventional fabrication method for characterizing of electro-optical performances of the proposed device. The experimental results show that the measured half-wave voltage is of ~10 V and the total measured fiber-to-fiber insertion loss is of ~6.4 dB for a 40 mm long at a wavelength of =1.3 mm, respectively. From the experimental results, it is confirmed that the polymer-employed buffer layer in LiNbO3 optical modulator can be a substitute material instead of silicon oxide layer which is usually processed at a high temperature of over $300^{\circ}C$. Moreover, the fabrication tolerances by using polymer materials in LiNbO3 optical modulators are much less strict in comparison to the case of dielectric buffer layer.

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Integrated-Optic Electric-Field Sensor Utilizing a Ti:LiNbO3 Y-fed Balanced-Bridge Mach-Zehnder Interferometric Modulator With a Segmented Dipole Antenna

  • Jung, Hongsik
    • Journal of the Optical Society of Korea
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    • 제18권6호
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    • pp.739-745
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    • 2014
  • We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensor utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator, which uses a 3-dB directional coupler at the output and has two complementary output waveguides. A dc switching voltage of ~25 V and an extinction ratio of ~12.5 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf input power, the minimum detectable electric fields are ~8.21, 7.24, and ~13.3 V/m, corresponding to dynamic ranges of ~10, ~12, and ~7 dB at frequencies of 10, 30, and 50 MHz respectively. The sensors exhibit almost linear response for an applied electric-field intensity from 0.29 V/m to 29.8 V/m.

$Ti:LiNbO_3$ 도파로 제작을 위한 열처리 과정 동안 강유전 도메인 특성에 미치는 영향 (Ferroelectric domain inversion in $LiNbO_3$ crystal plate during heat treatment for Ti in-diffusion)

  • 양우석;이형만;권순우;김우경;이한영;윤대호
    • 한국결정성장학회지
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    • 제15권3호
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    • pp.124-127
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    • 2005
  • [ $Ti:LiNbO_3$ ], 광도파로 제작을 위해 큐리온도$(T_c)$ 아래에서 백금박스 내에서 알곤 과 산소 분위기 내에서 열처리 과정 동안 기판 표면의 강유전 도메인 특성 변화를 관찰하였다. 열처리 된 $LiNbO_3$ 기판의 +Z면의 경우 전체적으로 약 $1.6{\mu}m$ 두께로 도메인 반전이 이루어 졌으며, 표면에서 etch hillock이 관찰되었다. $LiNbO_3$ 결정 표면의 Li 이온이 외부로 확산 되는 영향을 감소시킬 수 있는 환경에 있는 기판 면에서 하나의 도메인이 관찰되었으며, 이때 결정 표면에서의 식각특성, 결정성 및 양이온 분포변화에 관하여 X-선 회절, AFM 및 SIMS를 이용하여 분석하였다.