• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.731-735
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• 2003

Ti-indiffused LiNbO$_3$waveguide have been used to various high speed optical device based on electro-optic effect such as modulators, switches, and sensor, etc. In order to high speed modulation of optical modulator have, one of the further devices, needed to increasing of electrode surrounding air by LiNbO$_3$dry etching because of impedance matching for optical and RF phase velocity between waveguide and electrode. We studied property of LiNbO$_3$dry etching after waveguide patterning lot optical modulation by using neutral loop discharge (NLD) plasma.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.109-116
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• 1998

In this work was produced and analyzed a z-cut Ti:LiNbO$_{3}$ optical waveguide which applies for various optical devices.A waveguide channel with a thickness 8 .mu.m and a length 66,000.mu.m and a mach-zehnder interferometer type waveguide were fabricated at a diffusion temperature 1050.deg. C for 6-8hours in a wet $O_{2}$ environment. The resulting Ti:LiNbO$_{3}$ optical waveguide was measured to have a Ti-strip thickness of 950.angs. and low loss. Surfaces and cross-sections of a fabricated waveguide were analysed. The mode pattern anaysis revealed that the waveguide showed a single mode at a 1550nm wavelength. The effective dimension of the waveguide was calculated by measuring a gaussian profile; Wx=10.95.mu. and Wy=9.14.mu.m. a propagation loss, of 0.50dB/cm for a TM mode and 0.45dB/cm for a TE mode, was low enough to be accepatable for optical devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.288-293
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• 2000

BPM simulation was used in order to fabricate the LiNbO$_3$optical waveguide with optical source of He-Ne laser(λ=0.6328[$\mu$m]). we observed electric field E$_{x}$, E$_{y}$ in the x,y-direction are simulated at the LiNbO$_3$substrate (X1 55[$\mu$m]$\times$Z1 5000[$\mu$m]), where the depth, width and buffer layer of waveguide are 0.2[$\mu$m],4[$\mu$m] and 0.02[$\mu$m] respectively. By applying these parameters of single waveguide to simulate a X-switch, we have chosen index change of 0.002, width of 3[$\mu$m] and angle of 0.4$^{\circ}$~0.6$^{\circ}$of optical waveguide and under these conditions, optical beam propagates cross-side at 0.4$^{\circ}$. When applied switching voltage of 25[V], optical beam of X-switch turns cross-side to bar-side at intersection angle 0.4$^{\circ}$, index change of 0.002, waveguide width of 3[$\mu$m], electrode gap 2[$\mu$m]. By the above results, we can obtain design conditions of theoretical analysis of an X-switch optical waveguide.e.e.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.64-71
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• 2000

An optical switch composed of identical, equally-spaced $Ti:LiNbO_3$ three-waveguides was designed and fabricated. Patterned Ti was diffused into z-cut $LiNbO_3$ substrates. $SiO_2$ buffer layer was evaporated to reduce the propagation loss of TM mode, and Al electrodes of CPW structure were built on the layer for switching of the guided beam. The optical switching phenomenon was confirmed when a beam of ${\lambda}=1.3{\mu}m$ was launched into the center waveguide and an electric field was applied to detune the three waveguides symmetrically.

• Journal of the Optical Society of Korea
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• v.8 no.2
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• pp.90-95
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• 2004

The structure of Ti:LiNbO$_3$optical waveguide with a mode size far different from that of single mode optical fiber has been optimized by tapering the waveguide ends. This work was focused on determining the optimized sets of parameters for the fabrication of low-loss Ti indiffused optical waveguides in LiNbO$_3$. Numerical and analytical modeling were applied to simulate the guiding quality and to determine the mode sizes. Based on these modeling results, new waveguide structures with tapered ends have been defined, fabricated and characterized in the respect of the coupling of fiber to Ti-indiffused LiNbO$_3$waveguide.

• Korean Journal of Optics and Photonics
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• v.2 no.3
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• pp.149-152
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• 1991

We report a new method of fabricating a Ti:LiNb03 waveguide with no out-diffusion by coating the waveguide with $SiO_2$ thin film. It was coated before diffusion process, and the $LiO_2$ out-diffusion was prevented in the diffusion process. We compare the near field patterns of the guided modes between the typical waveguide and the waveguide fabricated by new method proposed here.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.400-406
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• 1998

We investigated the preparation and guided-mode properties of $Ti:LiNbO_3$ waveguides which were fabricated by Ti in-diffusion. The diffusion method to reduce the Li out-diffusion was proposed. The optical guided-mode and propagation loss based on butt-coupling pigtailed with PMF-input were measured. How to improve the polishing grade of waveguide endfaces is newly proposed in this paper. To show the mode propagations, the BPM simulations of channel waveguide are described.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.682-691
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• 1997

We have investigated the guided optical properties of a Ti:LiNbO$_3$optical waveguide which was fabricated by Ti-diffusion in an air atmosphere and proposed an effective polishing method of waveguide endfaces. And the results of guided optical mode and fabrication condition were obtained as follows; \circled1 propagation loss : 0.53 dB/cm \circled2 mode size : horizontal/vertical=12.5${\mu}{\textrm}{m}$ \circled3 mode mismatch : 1.7 dB \circled4 diffusion temperature : 105$0^{\circ}C$, time : 8 hours \circled5 atmosphere : air

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1051-1057
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• 2000

A traveling-wave CPW(coplanar waveguide) electrode with abruptly broken input/output-taper for LiNbO$_3$optical modulator was designed and fabricated. The electrical characteristics of traveling-wave electrode on z-cut LiNbO$_3$crystal with SiO$_2$buffer layers were measured by network analyzer. To confirm the possibility of the electro-optic modulator electrode, detailed calculations of the impedance, microwave effective index and attenuation constants are presented as a function of the microwave electrode thickness, but the buffer layer thickness is fixed as 1${\mu}{\textrm}{m}$. These characteristics are discussed from the viewpoint of the device optimization and are expected to be design guides for the LiNbO$_3$modulator’s electrodes.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.10
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• pp.1584-1590
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• 1989

In this study, a planar waveguide has been fabricated on a Y-cut LiNbO3 substrate by the Ti indiffusion technique and its guiding characteristics are measured by bright M-line spectroscopy. Using the photolithography method, an electro-optic grating modulator with interdigital electrodes has been fabricated by depositing Al on the Ti:LiNbO3 planar waveguide. And the beam intensity diffracted by the grating is measured as the applied voltage is increased.