• Korean Journal of Optics and Photonics
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• v.17 no.3
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• pp.262-267
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• 2006

We proposed a PPLN fabrication setup that measures the voltage and current applied to $LiNbO_3$ in real time during application of a DC electric field. Because the duration for transferring a sufficient electron charge to $LiNbO_3$ increases, we are able to control the electron charge flow transferred to $LiNbO_3$ efficiently. We divided the domain inversion process of PPLN into 5 states: Nucleation (state 1), Spread of the domain inversion region under the electrode(state 2), Accumulation of the electron charge at the insulator/$LiNbO_3$ interface(state 3), Domain inversion under the insulator layer after breakdown(state 4), and Lowering the electric field applied to $LiNbO_3$ (state 5). We have found that the Threshold Point is essential for the domain inversion and that the domain inversion process must be stopped within state 3 for the optimum PPLN. Using these results, we could fabricate a stable and reproducible PPLN efficiently.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.318-331
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• 1995

The c - axis oriented single crystal of $LiNbO_3$ and $LiNbO_3$ : 5mol%MgO was success-fully grown by Floating zone method using halogen lamp as a heat source. The effects of the sintering condition of the feed rod and the atmosphere gas during the crystal growth on the be havior of the feed rod/melt interface were studied for growing crystal with the high quality, and then, the optimum growth conditions were determined by studying the experimental param eters, such as gas flow rate, pulling rate, rotation speeds of the feed rod and the seed. The grown crystals were analyzed using the chemical etching to observe the tch pattern and the ICP (Inductively Coupled Plasma) to determine the composition uniformity and the impurity content of Fe. The effects of additive (5 mol % MgO) on the transmittance and refractive index was, also, analyzed. In order to compare the nonlinear optical oharacteristics of $LiNbO_3$ with those of the other optical materials, the nonlinear optical refractive index ($n_2$) was calcu l lated using the measured refractive index.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.1
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• pp.89-95
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• 1997

X-cut y-propagation $LiNbO_{3}$ optical modulator is analyzed by finite element calculation. the purpose of this trial is the design of wide-bandwidth x-cut $LiNbO_{3}$ optical modulator with ridge wave guide, which was only applied to z-cut $LiNbO_{3}$ optical modulator. the simulation tool is examined by the comparison between our results and Becker's. And we consider the optimum position of optical waveguide to electrodes for decreasing the driving voltage. The calculated driving-voltage, characteristic impedance and microwave effective index at $1.3{\mu}{\textrm{m}}$ optical wavelength are 18 V.cm, $48.13{\Omega}$ and 2.168, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.743-746
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• 2000

Metal-ferroelectric-insulator-semiconductor(MFIS) devices using Pt/$LiNbO_3$/Si structure were successfully fabricated. The dielectric constant of the AIN film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 8.2. The gate leakage current density of MIS devices using a aluminum electrode showed the least value of 1$\times$$1O^{-8}$A/$cm^2$ order at the electric field of 500kV/cm. The dielectric constant of $LiNbO_3$film on AIN/Si structure was about 23 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 500kV/cm was about 5.6$\times$ $1O^{13}$ $\Omega$.cm.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.977-980
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• 2002

Using the micro-pulling down method, $Nd_2O_3$ doped crack-free stoichiometric $LiNbO_3$ single crystals were grown in 1 mm diameter and 30∼35 mm length. The homogeneous distributions of $Nd_2O_3$ concentration were confirmed by the electron probe micro analysis. The absorption and photoluminescence spectra were measured with respect to the $Nd_2O_3$ doping.

• Journal of the Korean Ceramic Society
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• v.46 no.4
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• pp.419-424
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• 2009

Congruent or stoichiometric $LiNbO_3$ fiber single crystals were grown by the $\mu$-PD method, and the grown fiber crystals have the several (2 or 3) ridges with a diameter of $1.35{\sim}1.5\;mm$ and a length of $40{\sim}100\;mm$. In this $\mu$-PD process, different growth rates ($10{\sim}60\;mm/h$) were applied. Pt wire or $LiNbO_3$ crystal was used as a seed. The properties of grown $LiNbO_3$ fiber single crystals having a-axis or c-axis according to seeds were effected by the grown conditions(Pt tube diameter, pulling speed, after heater etc.). Disk-type $LiNbO_3$ samples were poled in condition of DC 5 V/cm at 1050, 1075 or $1100^{\circ}C$. XRD, SEM, conoscope image through the polarized microscope, $T_C$ measuring apparatus, optical transmittance measuring instrument are used to identify the properties of $LiNbO_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.397-398
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• 2005

Ferroelectric Lithium niobate ($LiNbO_3$) thin films are fabricated on $Al_2O_3$(0001) substrate using Pulsed Laser Deposition (PLD). The various deposition conditions such as substrate temperature, oxygen pressure, and post annealing condition are investigated to deposite c-axis oriented $LiNbO_3$ thin films. Highly c-axis oriented thin films are obtained under the conditions of working pressure of 100 mTorr, deposition for 10 min at $450^{\circ}C$, and in-situ annealing for 40 min. The $LiNbO_3$ thin films are chemically etched after electric poling and the etched configurations are studied by scanning electron microscope (SEM).

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.138-142
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• 2000

Thin film $LiNbO_3$MFS (metal-ferroelectric-semiconductor) capacitor showed improved characteristics such as low interface trap density, low interaction with Si substrate, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for FRAM (ferroelectric random access memory) applications. RTA (rapid thermal anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60sec. We learned from X-ray diffraction that the RTA treated films were changed from amorphous to poly-crystalline $LiNbO_3$which exhibited (012), (015), (022), and (023) plane. Low temperature film growth and post RTA treatments improved the leakage current of $LiNbO_3$films while keeping other properties almost as same as high substrate temperature grown samples. The leakage current density of $LiNbO_3$films decreased from $10^{-5}$ to $10^{-7}$A/$\textrm{cm}^2$ after RTA treatment. Breakdown electric field of the films exhibited higher than 500 kV/cm. C-V curves showed the clockwise hysteresis which represents ferroelectric switching characteristics. Calculated dielectric constant of thin film $LiNbO_3$illustrated as high as 27.9. From ferroelectric measurement, the remanent polarization and coercive field were achieved as 1.37 $\muC/\textrm{cm}^2$ and 170 kV/cm, respectively.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1352-1354
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• 1998

$LiNbO_3$ transistor showed relatively stable characteristic, low interface trap density, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$ thin films grown directly on p-type Si(100) substrates by 13.56 MHz rf magnetron sputtering system for FRAM applications. To take advantage of low temperature requirement for growing films, we deposited $LiNbO_3$ films lower than $300 ^{\circ}C$. RTA(Rapid Thermal Anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60 sec. We learned from X-ray diffraction that the RTA annealed films were changed from amorphous to poly-crystalline $LiNbO_3$ which exhibited (012), (015), and (022) orientations. The I-V characteristics of $LiNbO_3$ films before and after anneal treatment showed that RTA improved the leakage current of films. The leakage current density of films decreased from $10^{-5}$ to $10^{-7} A/cm^2$ at room temperature measurement. Breakdown electric field of the films exhibited higher than 500 kV/cm. The C-V curves showed the clockwise hysteresis represents ferroelectric switching characteristics. From C-V curves, we calculated dielectric constant of thin film $LiNbO_3$ as 27.5 which is close to that of bulk value.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.6-17
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• 1997

Lithium niobate single crystals with various [Li]/[Nb] ratios were grown by the Czochralski method from melts having compositions varing between 48.6 ~ 58.0 mol % $Li_2O$. A vapor transport equilibration technique has been used to improve the homogeneity and adjust the [Li]/[Nb] ratio in small $LiNbO_3$ single crystals grown by the Czochralski method. When equilibrated with a Li-rich powder (65 mol%$Li_2O$), containing a mixture of $LiNbO_3$ and $Li_3NbO_4$, crystals of nearly stoichiometric composition can be obtained. This was established by studying the composition dependence of the following properties; lineshape, intensity and linewidth for the electron paramagnetic resonance (EPR) of $Fe^{3+}$ energy of the fundamental absorption edge and $OH^-$ absorption spectra.