• Title/Summary/Keyword: $La_{2}Ti_{2}O_{7}$

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Structural and Dielectric Properties of PLT Thin Plates (PLT 박편의 구조 및 유전특성)

  • Lee, Jae-Man;Park, Ki-Cheol
    • Journal of Sensor Science and Technology
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    • v.7 no.1
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    • pp.51-60
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    • 1998
  • La-modified $PbTiO_{3}$(PLT) thin plates were prepared for the fabrication of PLT pyroelectric IR sensors. The effects of the preparation parameters such as tile sintering temperature, the La content, and the ambient powder quantity, on the microstructural and dielectric properties of PLT thin plates were investigated by X-ray diffraction, scanning electron microscope, and measurements of relative density and dielectric properties. With an increased La content, the tetragonality c/a was decreased but the densification and the grain size were increased, which is considered to be due to the increased Pb vacancy concentration to maintain charge neutrality at the increased of La content. When the quantity of the ambient powder wvas increased, the tetragonality was slightly increased, which is believed io be due to the reduced evaporation of PbO. But the e(fect is insignificant compared to that of La content. The dielectric constant at room temperature was increased and the Curie temperature was decreased in accordance with the decreased tetragonality ratio c/a with the increase of La content. The dielectric constant and tan ${\delta}$ of $500{\mu}m$ thick PLT thin plate with 10 wt% excess PbO and 10 mol% La contant sintered at $1250^{\circ}C$ for 2 hours in ambient powder of $0.02\;g/cm^{3}$ were 360 and 0.02, respectively.

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Pyroelectric Properties of PLT Thin Films Prepared by Sol-Gel Method (Sol-Gel 법으로 제조한 PLT박막의 초전특성)

  • Chung, Jang-Ho;Lee, Moon-Kee;Park, In-Gil;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1488-1490
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    • 1997
  • $(Pb_{1-x}La_x)Ti_{1-x/4}O_3$ (x=0, 0.02, 0.04, 0.06, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb,La)$TiO_3$ with excess Pb 10mol% was made and spin-coated on the Pt/Ti/$SiO_2$/Si substrate at 4000rpm for 30 seconds. Coated specimens were dried on the hot-plate at $350^{\circ}C$ for 10 min and sintered at $500{\sim}750^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6 at.%) thin films sintered at $650^{\circ}C$ were 884, $13.95{\mu}C/cm^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were $3.2{\times}10^{-8}\;C/cm^2K$, $1.02{\times}10^{-8}\;C{\cdot}cm/J$, $2.9{\times}10^{-11}\;C{\cdot}cm/J$, $0.29{\times}10^{-8}\;C{\cdot}cm/J$, respectively.

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The effect of electrical properties by gas ratio on $Bi_{3.25}La_{0.75}Ti_3O_{12}$ thin films deposited by RF magnetron sputtering during being annealed (RF magnetron sputtering으로 제작한 BLT 박막의 후열처리 시 가스비 변화에 따른 전기적 특성에 관한 연구)

  • Lee, Kyu-Il;Kim, Eung-Kwon;Kang, Hyun-Il;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.49-52
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    • 2003
  • The role of gas ratio with the crystallization behavior and electrical properties in $Bi_{3.25}La_{0.75}Ti_3O_{12}$(BLT) thin films by rf magnetron sputtering method has not been precisely defined. In this work, the ferroelectric properties of these films with gas variation was investigated. BLT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all BLT films indicated perovskite polycrystalline structure with preferred orientation (020) and (0012). And no pyrochlore phase was observed. The fabricated film annealed with $O_2$ of 15 sccm showed that value of leakage current was $9.67{\times}10^{-7}A/cm^2$ at 50kV /em, and the value of remanent polarization (2Pr=Pr+-Pr-) was $11.8{\mu}C/cm^2$. Therefore we induce access to memory device application by rf-magnetron sputtering method in this report.

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The Effect of Ar/O2 Partial Pressure Ratio on the Ferroelectric Properties of (Pb0.92La0.08)(Zr0.65Ti0.35)O3 Thin Films Deposited by RF Magnetron Sputtering Method (RF Magnetron Sputtering법으로 제작된 (Pb0.92La0.08)(Zr0.65Ti0.35)O3 박막의 Ar/O2 분압비에 따른 강유전 특성연구)

  • Kim, Sang-Jih;Yoon, Ji-Eon;Hwang, Dong-Hyun;Lee, In-Seok;Ahn, Jung-Hoon;Son, Young-Guk
    • Journal of the Korean Vacuum Society
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    • v.18 no.2
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    • pp.141-146
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    • 2009
  • PLZT ferroelectric thin films were deposited on Pt/Ti/$SiO_2$/Si substrate with $TiO_2$ buffer layer in between by rf magnetron sputtering method. In order to investigate the effect of Ar/$O_2$ partial pressure ratio on the ferroelectric properties of PLZT thin films, PLZT thin films were deposited at various Ar/$O_2$ partial pressure ratio ; 27/1.5 seem, 23/5.5 seem, 21/7.5 seem and 19/9.5 seem. The crystallinities of PLZT thin films were analyzed by XRD. The surface morphology was observed using FE-SEM. The P-E hysteresis loops, the remanent polarization characteristics and the leakage current characteristics were obtained using a Precision LC. The crystallinity and elaborateness of PLZT thin films were decreased as increasing the oxygen partial pressure ratio. And preferred orientation of PLZT thin films changed from (110) plane to (111) plane. The oxygen partial pressure ratio affects the thin film surface morphology and the ferroelectric properties.

Evaluation of Electrochemical Properties of Amorphous LLZO Solid Electrolyte Through Li2O Co-Sputtering (Li2O Co-Sputtering을 통한 비정질 LLZO 고체전해질의 전기화학 특성 평가)

  • Park, Jun-Seob;Kim, Jong-Heon;Kim, Hyun-Suk
    • Korean Journal of Materials Research
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    • v.31 no.11
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    • pp.614-618
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    • 2021
  • As the size of market for electric vehicles and energy storage systems grows, the demand for lithium-ion batteries (LIBs) is increasing. Currently, commercial LIBs are fabricated with liquid electrolytes, which have some safety issues such as low chemical stability, which can cause ignition of fire. As a substitute for liquid electrolytes, solid electrolytes are now being extensively studied. However, solid electrolytes have disadvantages of low ionic conductivity and high resistance at interface between electrode and electrolyte. In this study, Li7La3Zr2O12 (LLZO), one of the best ion conducting materials among oxide based solid electrolytes, is fabricated through RF-sputtering and various electrochemical properties are analyzed. Moreover, the electrochemical properties of LLZO are found to significantly improve with co-sputtered Li2O. An all-solid thin film battery is fabricated by introducing a thin film solid electrolyte and an Li4Ti5O12 (LTO) cathode; resulting electrochemical properties are also analyzed. The LLZO/Li2O (60W) sample shows a very good performance in ionic conductivity of 7.3×10-8 S/cm, with improvement in c-rate and stable cycle performance.

The Geochemistry of Yuksipryeong Two-Mica Leucogranite, Yeongnam Massif, Korea (영남육괴내 육십령 복운모화강암에 대한 지화학적 연구)

  • Koh, Jeong-Seon;Yun, Sung-Hyo
    • The Journal of the Petrological Society of Korea
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    • v.12 no.3
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    • pp.119-134
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    • 2003
  • Yuksipryeong two-mica granite presents strongly peraluminous characteristics in both mineralogy and geochemistry. It has high aluminum saturation index with 1.15∼l.20 and high corundum with 2.20∼2.98 wt% CIPW norm. As the color index is <16% and FeO$\^$T/+ MgO + TiO$_2$is average 1.9 wt%, it corresponds to leucogranite. Yuksipryeong two-mica leucogranite shows negative linear trend for TiO$_2$, Al$_2$O$_3$, FeO, Fe$_2$O$_3$, MgO, CaO, K$_2$O, P$_2$O$\_$5/, Rb, Ba, and Sr as SiO$_2$increases, and the positive relation of Zr and Th, which result from feldspar, biotite, apatite and zircon fractionation. Pegmatitic dike has higher SiO$_2$and P$_2$O$\_$5/, but lower another major elements. Yuksipryeong two-mica leucogranite has lower Rb, but higher Ba and Sr than Manaslu, Hercynian two-mica leucogranites, and S-type granites in Lachlan Fold Belt. Pegmatitic dike has higher Rb and Nb but lower Ba, Sr, Zr, Th, and Pb contents than Yuksipryeong two-mica leucogranite, resulting in removing or mobilizing for some trace elements from the granitic melt. Yuksipryeong two-mica leucogranite has total REEs with 95.7∼l23.3 ppm, and chondrite-normalized REE pattern is very steep ((La/Yb)$\_$N/ = 6.9∼24.8), light REEs (LREEs)-enriched End heavy REEs (HREEs)- depleted pattern with low to moderate Eu anomalies (Eu/Eu*= 0.7∼0.9). While pegmatitic dike has low total REEs with 7.0 ppm, and chondrite-normalized REE pattern is flat-pattern ((La/Yb)$\_$N/ = 2.1) with strong negative Eu anomalies (Eu/Eu*= 0.2). The melt compositions having formed two-mica leucogranites depend on not only the source rock but also the amounts of the residual remaining after melting of source rocks. The CaO/Na$_2$O and Rb/Sr-Rb/Ba ratios depend mainly on the composition of source rocks in the strongly peraluminous granite, that is, plagioclase/clay ratio of the source rocks. Yuksipryeong two-mica leucogranite has higher CaO/Na$_2$O and lower Rb/Sr-Rb/Ba ratios than Manaslu and Hercynian two-mica leucogranites (Millevaches and Gueret) derived from clay-rich, plagioclase-poor (polite), which suggest that the probable source rocks for Yuksipryeong two-mica leucogranite is clay-poor, plagioclase-rich quartzofeldspathic rocks. As the concentrations of Al$_2$O$_3$remain nearly constant but those of TiO$_2$increases as increasing temperature in the strong peraluminous melt, the Al$_2$O$_3$/TiO$_2$ratio may reflect relative temperature at which the melts have formed. Comparing the polite-derived Manaslu and Hercynian two- mica leucogranites, Manaslu two-mica leucogranite has higher Al$_2$O$_3$/TiO$_2$ratio than latter, and its melt have formed at relatively lower temperature ($\leq$ 875$^{\circ}C$) than Hercynian two-mica leucogranites. Likewise, comparing the quartzofeldspathic rock-derived granites, Yuksipryeong two-mica granite has higher Al$_2$O$_3$/TiO$_2$, ratio than S-type granites in Lachlan Fold Belt (>875$^{\circ}C$). The melt formed Yuksipryeong two-mica leucogranite are considered to have been formed at temperature at below the maximum 875$^{\circ}C$C$.

Mg and Ti Doping Effect in $SrBi_2Ta_2O_9$ (Mg와 Ti Doping에 따른 $SrBi_2Ta_2O_9$의 특성 변화)

  • Park, Sol-la;Pak, Sung-Ho;Jun, Ho-Sung;Kim, Chul-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.43-46
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    • 2002
  • Ferroelectric Mg-doped SBT and Ti-doped SBT were successfully deposited on Pt/Ti/$SiO_2/Si$ substrate by using a sol-gel solution coating method. The solutions were prepared through out adding the metal alkoxide solutions to SBT solution. The typical hysteresis loop of the films was obtained at 5V. The measured $2P_r$ value were $16.50{\mu}C/cm^2$ for SBT, $18.98{\mu}C/cm^2$ and for Mg-doped SBT, and $17.10{\mu}C/cm^2$ for Ti-doped SBT at an applied voltage of 5V, respectively. And it is found that the leakage current densities are less than $10^{-7}A/cm^2$ when applied voltage is less than 10.8MV/cm, which indicates the excellent insulating characteristics.

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Pyroelectric Infrared Microsensors Made for Human Body Detection (인체 감지용 강유전체 박막 초전형 적외선 센서의 제작)

  • Choi, Jun-Rim
    • Journal of Sensor Science and Technology
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    • v.7 no.2
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    • pp.103-110
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    • 1998
  • Pyroelectric infrared detectors based on La-modified $PbTiO_{3}$ (PLT) thin films have been fabricated by RF magnetron sputtering and rnicrornachining technology. The detectors form $Pb_{l-x}La_{x}Ti_{1-x/4}O_{3}$ (x=0.05) thin film ferroelectric capacitors epitaxially grown by RF magnetron sputtering on Pt/MgO (100) substrate. The sputtered PLT thin film exhibits highly c-axis oriented crystal structure that no poling treatment for sensing applications is required. This is an essential factor to increase the yield for realization of an infrared image sensor. Micromachining technology is used to lower the thermal mass of the detector by giving maximum sensor efficiency. Polymide is coated on top of the sensing elements to support the fragile structure and the backside of the MgO substrate is selectively etched to reduce the heat loss. The sensing element exhibited a very high detectivity D* of $8.5{\times}10^{8}cm{\cdot}\sqrt{Hz}/W$ at room temperature and it is about 100 times higher than the case of micromachining technology is not used. A sensing system that detects the position as well as the existence of a human body is realized using the array sensor.

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Preparation of $(Bi,La)Ti_{3}O_{12}$ Thin Films on $Al_{2}O_{3}/Si$ Substrates by the Sol-Gel Method

  • Chang, Ho Jung;Hwang, Sun Hwan;Chang, Ho Sung;Sawada, K.;Ishida, M.
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2002.11a
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    • pp.69-71
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    • 2002
  • $(Bi, La)Ti_{3}O_{12}(BLT)$ ferroelectric thin films were prepared on $Al_{2}O_{3}/Si$ substrates by the sol-gel method. The as-coated films were post-annealed at the temperature of $650^{\circ}C$ and $700^{\circ}C$ for 30 min. The crystallinty, surface morphologies and electrical properties were affected by the annealing temperatures. The BLT films annealed at above $650^{\circ}C$ exhibited typical bismuth layered perovskite structures with (00$\ell$) preferred orientation. The granular shaped grains with a size of approximately 90nm was formed in the film sample annealed at $700^{\circ}C$. The memory window volatge of the BLT film was 2.5V. The leakage current of BLT films annealed at $650^{\circ}C$ was about $1\times10^{-7}A/\textrm{cm}^2$ at 3V.

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Electrical characteristics of 30MHz resonator using $PbTiO_3$ system ceramics ($PbTiO_3$계 세라믹스을 이용한 30MHz 레조네이터의 전기적특성)

  • Oh, D.O.;Yoo, J.H.;Park, C.Y.;Yoon, H.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05c
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    • pp.71-74
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    • 2002
  • In this study, resonant characteristics of $Pb_{0.88}(La_{0.6}Nd_{0.4})_{0.08}(Mn_{1/3}Sb_{2/3})_{0.02}Ti_{0.98}O_3$ ceramics were investigated with the variations of electrode radius size for manufacturing the best 30MHz SMD type ceramic resonator with the size of $3.7{\times}3.1{\times}0.255mm^3$. Physical properties were proper for appling for 30MHz SMD type ceramic resonator. In third overtone thickness vibration mode, with increasing electrode radius size, resonant resistant($Z_r$) was decreased gradually. Mechanical quality factor($Q_{mt3}$) and dynamic range(D.R) showed the maximum value of 2,283, 47.1dB respectively, at 0.74mm electrode radius size.

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