• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.498-503
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• 1999

La-doped $BaTiO_3$ ceramics were prepared from BaTiO(C_2O_4)_2\;{\cdot}\;XH_2O(BTO)$, which was synthesized by homogeneous precipitation using dimethyl oxalate. The electrical properties of La-doped $BaTiO_3$ were investigated with variation of La-contents and particle size. It was found that a large PTCR (positive temperature coefficient of resistivity) effect was appeared in the conditions at the 0.6 mol% of La-content and at small particle size of BTO as 1.0$\mu\textrm{m}$. The plot of temperature vs. 1/$\varepsilon_m$(T) above Curie temperature $(T_c)$ was agreed with Curie-Weiss law. The potential barrier calculated from measured resistance and capacitance of specimen, also gave higher value at small particle size of BTO as 1.0 $\mu\textrm{m}$ and at La-content of 0.6 mol%.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.51-60
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• 1998

La-modified $PbTiO_{3}$(PLT) thin plates were prepared for the fabrication of PLT pyroelectric IR sensors. The effects of the preparation parameters such as tile sintering temperature, the La content, and the ambient powder quantity, on the microstructural and dielectric properties of PLT thin plates were investigated by X-ray diffraction, scanning electron microscope, and measurements of relative density and dielectric properties. With an increased La content, the tetragonality c/a was decreased but the densification and the grain size were increased, which is considered to be due to the increased Pb vacancy concentration to maintain charge neutrality at the increased of La content. When the quantity of the ambient powder wvas increased, the tetragonality was slightly increased, which is believed io be due to the reduced evaporation of PbO. But the e(fect is insignificant compared to that of La content. The dielectric constant at room temperature was increased and the Curie temperature was decreased in accordance with the decreased tetragonality ratio c/a with the increase of La content. The dielectric constant and tan ${\delta}$ of $500{\mu}m$ thick PLT thin plate with 10 wt% excess PbO and 10 mol% La contant sintered at $1250^{\circ}C$ for 2 hours in ambient powder of $0.02\;g/cm^{3}$ were 360 and 0.02, respectively.

• Journal of Magnetics
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• v.17 no.4
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• pp.265-270
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• 2012

We report improved low-field magnetoresistance (LFMR) effects of the $La_{0.7}Sr_{0.3}Mn_{1+d}O_3-Mn_3O_4$ composite films with the nominal composition of $La_{0.7}Sr_{0.3}MnO_3$(LSMO)-50 mol% $Mn_3O_4$. The composite films were fabricated by ex-situ solid phase crystallization (SPC) of amorphous films at the annealing temperature region of $900-1100^{\circ}C$ for 2 h in a pure oxygen atmosphere. The amorphous films were deposited on polycrystalline $BaZrO_3$ (poly-BZO) substrates by dc-magnetron sputtering at room temperature. The Curie temperatures ($T_C$) of all composite films were insignificantly altered in the range of 368-372 K. The highest LFMR value of 1.29 % in 0.5 kOe with the maximum dMR/dH value of $37.4%kOe^{-1}$ at 300 K was obtained from 900 nm-thick composite film annealed at $1100^{\circ}C$. The improved LFMR properties of the composite films are attributed to effective spin-dependent scattering at the $La_{0.7}Sr_{0.3}Mn_{1+d}O_3$ grain boundaries sharpened by adjacent chemically compatible $Mn_3O_4$ grains.

• Journal of the Korean Ceramic Society
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• v.44 no.11
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• pp.627-632
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• 2007

We have studied the ac conductivity of insulating $La_{0.7}Sr_{0.3}FeO_3$ in the frequency range 20 Hz-l MHz and in the temperature range 80-300 K. We have analyzed experimental results in the frame works of the quantum-mechanical tunneling mechanism (QMT) and the hopping of barrier mechanism (HOB). We observed that small polaron QMT model is the most suitable mechanism for the low temperature ac conductivity of $La_{0.7}Sr_{0.3}FeO_3$.

• Nuclear Engineering and Technology
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• v.53 no.8
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• pp.2576-2581
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• 2021

The thermal stability and crystallization behaviors of La₂O₃ containing B₂O₃-CaO-Al₂O₃ glass waste forms were investigated to evaluate the stability of waste form during emergencies in deep geological disposal. For glasses containing 15% La₂O₃, LaBO₃ phases were observed as major crystals from 780 ℃ and exhibited needlelike structures. Al, Ca, and O were homogeneously distributed throughout the entire specimen, while some portions of B and La were concentrated in some parts. By differential thermal analysis at various heating rates, the activation energy for grain growth and the crystallization rate of LaBO₃ were calculated to be 12.6 kJ/mol and 199.5 kJ/mol, respectively. These values are comparable to other waste forms being developed for the same purpose.

• Korean Journal of Materials Research
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• v.16 no.7
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• pp.416-421
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• 2006

The varistor properties of ZPCCL-based ceramics were investigated at different $La_2O_3$ contents in the range of $0{\sim}2.0$ mol%. As $La_2O_3$ content increased, the ceramic density greatly increased in the range of $4.71{\sim}5.77\;g/cm^3$ and the varistor voltage greatly decreased in the range of $503.5{\sim}9.4$ V. The varistor with 0.5 mol% $La_2O_3$ exhibited good nonlinearity, in which the nonlinear exponent is 81.6 and the leakage current is 0.2 ${\mu}A$. Furthermore, the varistors exhibited the high electrical stability, with $%{\Delta}V_{1mA}=-1.1%,%{\Delta}{\alpha}=-3.7%$, and $%{\Delta}I_L=+100%$ for DC accelerated aging stress condition of 0.95 $V_{1mA}/150^{\circ}C/24$ h.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.718-723
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• 2004

Crystal structure of $(Ba-{1-x}La_x)[Mg_\frac{1+x}{3}}Nb_\frac{{2-x}{3}}]O_3$ (BLMN) ceramics with 0\leq1x \geq was investigated using synchrotron X-ray powder diffraction (XRD) and high reso(B $a_{l-x}$L $a_{x}$)[M $g_{(1+x)}$3/N $b_{(2-x)/3}$］ $O_3$lution transmission electron microscopy (HRTEM). When the La content, x, is above 0.1, the 1:2 ordered hexagonal structure found in Ba($Mg_\frac{1}{3}Nb_\frac{2}{3}})O_3$(BMN) was transformed into 1:1 ordered cubic structure. The 1:1 ordered cubic structure was maintained up to x=0.7. When x exceeded 0.7, however, BLMN was transformed into 1:1 ordered structure which has cation displacement and in-phase and anti-phase tilt of octahedra.

• Journal of Sensor Science and Technology
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• v.11 no.4
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• pp.247-253
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• 2002

For fabrication of the pyroelectric IR sensor $(Pb,La)TiO_3(PLT)$/$LiTaO_3$/(LTO)/PLT ferroelectric thin films was deposited by rf magnetron sputtering followed by rapid thermal annealing and the crystallinity as a function of annealing temperature and time was investigated. Permittivity and dielectric loss factor of ferroelectric thin films as a function of c-axis preffered orientation was measured. Also pyroelectric coefficient of ferroelectric thin films with largest c-axis preffered orientation was measured and obtain figure of merit of voltage response($F_V$) and detectivity($F_D$). In this case $F_V$, $F_D$ was $5.63{\times}10^{-10}\;C{\cdot}cm/J$, $1.98{\times}10^{-8}\;C{\cdot}cm/J$, respectively.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1999.04a
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• pp.34-34
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• 1999

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.366.2-366.2
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• 2014

Impedance spectroscopy allows for simultaneous characterization of interface-controlled materials and/or devices in terms of electrical and dielectric aspects. Recently, there have tremendous interests in 2-dimensional electron gas layers (2DEGs) involving $LaAlO_3$ and $SrTiO_3$ whose features incorporates extremely high mobility and carrier concentrations along with metallic responses unlike the constituents, $LaAlO_3$ and $SrTiO_3$. Impedance spectroscopy offers the following unique features, such as simultaneous determination of conductivity and dielectric constants, identification of electrical origins among bulk-, grain boundary-, and electrode-based responses. Impedance spectroscopy was applied to the 2DEG $LaAlO_3/SrTiO_3$ system, in order to extract the electrical and dielectric information operating in the 2DEG system. The unique responses of the 2DEG system are investigated in terms of temperature and device structures. The underlying mechanism of the 2DEG system is proposed with the aim to optimizing the high-mobility 2DEG responses and to expedite the associated devices towards the high-density integrated chips.