• Bulletin of the Korean Chemical Society
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• 제35권4호
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• pp.1182-1190
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• 2014

$Cd_{1-x}Zn_xS$-sensitized $K_4Nb_6O_{17}$ composite photocatalysts (designated $Cd_{1-x}Zn_xS/K_4Nb_6O_{17}$) were prepared via a simple deposition-precipitation method. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectrometry (EDS), $N_2$ sorption, ultraviolet-visible light diffuse reflectance spectroscopy (UV-Vis DRS), photoluminescence measurements (PL), and X-ray photoelectron spectroscopy (XPS). The $Cd_{0.8}Zn_{0.2}S$ particles were scattered on the surface of $K_4Nb_6O_{17}$, and had a relatively uniform size distribution around 50 nm. The absorption edge of $K_4Nb_6O_{17}$ was shifted to the visible light region and the recombination of photo-generated electrons and holes suppressed after $Cd_{0.8}Zn_{0.2}S$ loading. The $Cd_{0.8}Zn_{0.2}S$(25 wt %)/$K_4Nb_6O_{17}$ composite possessed the highest photocatalytic activity for hydrogen production under visible light irradiation, evolving 8.278 mmol/g in 3 h. Recyclability tests were performed, and the composite photocatalysts were found to be fairly stable. The mechanism of charge separation between the photogenerated electrons and holes at the $Cd_{0.8}Zn_{0.2}S/K_4Nb_6O_{17}$ composite was discussed.

• The Korean Journal of Ceramics
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• 제6권1호
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• pp.43-46
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• 2000

$H_4Nb_6/O_{17}$/CdS nanocomposites which intercalated CdS particles, less than 0.8nm thickness, in the interlayer of $H_4Nb_6/O_{17}$ were prepared by the successive ion exchange reactions of $H_4Nb_6/O_{17}$ with $Cd^{2+}$ and $C_3H_7NH_3_+$, followed by the reaction with $H_2S$ gas. $H_4Nb_6/O_{17}$/CdS photocatalytically reduced $NO_3$￣ to $NO_2$￣ and $NH_3$in the presence of sacrificial hole acceptor such as methanol under visible light irradiation (wavelength>400nm), although unsupported CdS showed no noticeable photocatalytic activity for $NO_3$￣ reduction. The catalytic activity of $H_4Nb_6/O_{17}$/CdS greatly enhanced with co-doping of Pt particles in the interlayer.

• Bulletin of the Korean Chemical Society
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• 제28권6호
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• pp.921-928
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• 2007

Three different phosphonated trisbipyridine ruthenium complexes, [(4-CH3-4'-CH2PO(OH)2-2,2'-bipyridine)- (bpy)2Ru]·(PF6)2 (Ru-P1), [(4-CH3-4'-CH2PO(OH)2-2,2'-bipyridine)3Ru]·(PF6)2 (Ru-P2), and [(4,4'-CH2PO- (OH)2-2,2'-bipyridine)3Ru]·(PF6)2 (Ru-P3) were synthesized and their photochemical and electrochemical properties were studied. These ruthenium complexes were strongly adsorbed on the surface of the layered metal oxide semiconductor K4Nb6O17 that was partially acid-exchanged and sensitized up to pH 10, while the carboxylated ruthenium complex, (4,4'-COOH-2,2'-bipyridine)3Ru·Cl2 (Ru-C) that was previously studied was sensitized only below pH 4. The visible light water reduction at K4Nb6O17 that was internally platinized and sensitized by these phosphonated Ru-complexes was comparatively studied using a reversible electron donor iodide.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.245-251
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• 2017

Niobium doped zirconium oxide (Nb-Zr-O:NZO) thin films were fabricated on Si substrates by a sol-gel technique with an annealing temperatures of $500{\sim}1000^{\circ}C$ in air ($N_2:O_2=3:1$) for 20 minutes. It was found that the NZO film is based on tetragonal $ZrO_2$ polycrystalline structure with the Nb 5+ ion state and there is almost no diffusion of Nb or Zr to Si substrate. The relative dielectric constant for the NZO film with the Nb composition of 30 mol% and annealed at $800^{\circ}C$ was around 40. The root mean roughness was 1.02 nm. In addition, the leakage current of NZO films was as low as $10^{-6}A/cm^2$ at 4.4 V.

• 소성∙가공
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• 제17권5호
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• pp.364-372
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• 2008

In this study, the circumferential creep behaviors ofpilgered advanced Zirconium alloy tubes such as Zr-Nb-O and Zr-Nb-Sn-Fe were investigated in the temperature range of $400\sim500^{\circ}C$ and in the stress range of 80$\sim$150MPa. The test results indicate that the stress exponent for the steady-state creep rate of the Zr-Nb-Sn-Fe alloy decreases with the increase of stress(from 6$\sim$7 to 4), while that of the Zr-Nb-O alloy is nearly independent of stress(5$\sim$6). The activation energy of creep deformation is found to be nearly the same as the activation energy for Zr self diffusion. This indicates that the creep deformation may be controlled by dislocation climb mechanism in Zr-Nb-O. On the other hand, the transition of stress exponent(from 6-7 to 4) in Zr-Nb Sn-Fe strongly suggests the transition of the rate controlling mechanism at high stresses. The lower stress exponent at high stresses in Zr-Nb-Sn-Fe can be explained by the dynamic deformation aging effect caused by interaction of dislocations with Sn substitutional atoms.

• 한국결정성장학회지
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• 제17권6호
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• pp.245-250
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• 2007

This study was focused on the effect of sintering additive and particle size on the low temperature sintering of $0.85CaWO_4-0.15SmNbO_4$ ceramics. With an increase of $CaV_2O_6$ content, the sintering temperature of the specimens was reduced from $1150^{\circ}C\;to\;800^{\circ}C$. The dielectric constant (K) and Qf value were increased with $CaV_2O_6$ content. These results are due to the enhancement of the density by the liquid phase sintering. Temperature coefficient of resonant frequency (TCF) was slightly shifted to the positive value with $CaV_2O_6$ content. Typically, K of 12.64, Qf of 23,106 GHz, TCF of $-34ppm/^{\circ}C$ were obtained for the specimens with 7 wt.% $CaV_2O_6$ sintered at $900^{\circ}C$ for 3 h.

• 한국결정성장학회지
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• 제17권4호
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• pp.151-155
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• 2007

녹색 광 발진을 위해 조화용융조성의 MgO가 첨가된 $LiNbO_3$ 결정을 이용하여 준위상정합 2차 조화파 도파로 소자를 제작하였다. 도메인 반전을 위해 +Z면에 주기적인 전극 패턴을 형성하였으며, 외부전계의 균일한 인가를 위해 LiCl 전해 용액을 사용하여 도메인을 반전 시켰다. 선택적 화학식각을 통해, 약 $6.8{\mu}m$의 분극 반전 주기를 확인 할 수 있었으며, $7{\mu}m$ ridge 높이와 $3{\mu}m$의 slap높이를 갖는 폭 $5{\mu}m$의 PPMgLN ridge-type 도파로 소자의 비선형 특성을 측정하였다.

• 광물과 암석
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• 제33권2호
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• pp.115-127
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• 2020

운산 금 광상은 한반도의 3대(대유동 광상, 광양 광상) 금 광상중의 하나이었다. 이 광상 주변지질은 선캠브리아기의 변성퇴적암류와 중생대의 반상화강암으로 구성된다. 이 광상은 선캠브리아기의 변성퇴적암류와 중생대의 반상화강암내에 발달된 단층대를 따라 충진한 함 금 석영맥 광상으로 조산형 금 광상에 해당된다. 이 광상의 석영맥은 광물조합에 따라 1)방연석-석영맥형, 2)자류철석-석영맥형, 3)황철석-석영맥형, 4)페크마틱 석영맥형, 5)백운모-석영맥형 및 6)단순석영맥형으로 분류된다. 연구된 석영맥은 황철석-석영맥형이며 견운모화작용, 녹니석화작용 및 규화작용이 관찰된다. 이 석영맥은 백색 석영, 백색 운모, 녹니석, 황철석, 금홍석, 방해석, 모나자이트, 저어콘 및 인회석 등이 산출된다. 금홍석은 엽리상 석영맥내 유색대에서 자형내지 중립질 입단으로 어두운 금홍석과 밝은 금홍석으로 산출된다. 금홍석의 화학조성은 89.69~98.71 wt.% (TiO₂), 0.25~7.04 wt.% (WO₃), 0.30~2.56 wt.% (FeO), 0.00~1.71 wt.% (Nb₂O₅), 0.17~0.35 wt.% (HfO₂), 0.00~0.30 wt.% (V₂O₃), 0.00~0.35 wt.% (Cr₂O₃) 및 0.04~0.25 wt.% (Al₂O₃)으로 밝은 금홍석이 어두운 금홍석보다 WO₃, Nb₂O₅ 및 FeO 원소들의 함량이 높게 산출되며 서로 다른 시기에 형성된 것으로 생각된다. 어두운 금홍석과 밝은 금홍석내 미량원소들은 어두운 금홍석 [(V³⁺, Cr³⁺) + (Nb⁵⁺, Sb⁵⁺) ↔ 2Ti⁴⁺, 4Cr³⁺ (or 2W⁶⁺) ↔ 3Ti⁴⁺ (W⁶⁺ ↔ 2Cr³⁺), V⁴⁺ ↔ Ti⁴⁺], 밝은 금홍석 [2Fe³⁺ + W⁶⁺ ↔ 3Ti⁴⁺, 3Fe²⁺ + W⁶⁺ ↔ Ti⁴⁺ + (V³⁺, Al³⁺, Cr³⁺) +Nb⁵⁺]로써 치환관계가 있었다. 이들 자료를 근거로, 어두운 금홍석은 광역변성작용 동안 모암광물들의 변질 시 광물내 존재했던 V³⁺, V⁴⁺, Cr³⁺, Nb⁵⁺, Sb⁵⁺, W⁶⁺과 같은 양이온들의 재 농집에 의해 형성되었으나 밝은 금홍석은 ductile shear 시 높은 함량의 Fe²⁺ 및 W⁶⁺ 양이온들을 함유한 열수용액의 유입에 따른 어두운 금홍석과 반응에 의해 어두운 금홍석에 존재하였던 V³⁺, V⁴⁺, Al³⁺, Cr³⁺ 및 Nb⁵⁺과 같은 양이온들의 재 농집에 의해 형성된 것으로 생각된다.

• 한국세라믹학회지
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• 제43권1호
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• pp.55-61
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• 2006

The microwave dielectric properties and low temperature sintering of $Ca[Ti_{1-x}(Ni_{1/3}Nb_{2/3})_x]O_3$ system were investigated at the sintering temperature $1,200\~1,350^{\circ}C$. The density and quality factors $(Q{\times}f)$ increased while dielectric constants slightly decreased with the decrease of Ti. The dielectric constant, quality factor, and temperature coefficient of resonance frequency $(\tau_f)$ were 64, 17,000 GHz, and $-9.1\;ppm/^{\circ}C$ respectively, when $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ ceramics were sintered at $1,300^{\circ}C$ for 4 h. $2Li_2O-B_2O_3$ was added to $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ to decrease the sintering temperature for LTCC application. The microwave dielectric properties of the samples sintered at $925^{\circ}C$ for 2 h with the addition of $6\;wt\%\;2Li_2O-B_2O_3$ were $\varepsilon_r=48.7,\;Q{\times}f=8,460\;GHz$, and $\tau_f=+5.6ppm/^{\circ}C$. Compatibility test of the composition with silver electrode shows no reaction with silver electrode, implying the feasibility as a high-K LTCC material.

• Journal of Ceramic Processing Research
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• 제20권6호
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• pp.603-608
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• 2019

In this study, the multilayered thin films of (Ba,Sr)TiO3/K(Ta,Nb)O3 were fabricated by the sol-gel and spin coating methods, and their structural and electrical properties were investigated. The specimen showed polycrystalline X-ray diffraction (XRD) characteristics with a tetragonal structure. The average grain size and film thickness for one coating were about 30~40nm and 60nm, respectively. The phase transition temperature of specimen was lower than 10 ℃. The dielectric constant and loss at 20 ℃ of the specimen coated six times were 1,231 and 0.69, respectively. The rate of change in dielectric constant at an applied direct current (DC) voltage of the six times coated thin films was 17.3%/V. The electrocaloric effect was the highest around the temperature at which the remanent polarization rapidly changed. When an electric field of 660kV/cm was applied to the triply coated thin films, the highest electrocaloric property of 4.41 ℃ was observed.