JSTS:Journal of Semiconductor Technology and Science

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Investigation of Nb-Zr-O Thin Film using Sol-gel Coating

  • Kim, Joonam (School of Materials Science, Japan Advanced Institute of Science and Technology) ;
  • Haga, Ken-ichi (School of Materials Science, Japan Advanced Institute of Science and Technology) ;
  • Tokumitsu, Eisuke (School of Materials Science, Japan Advanced Institute of Science and Technology)
  • Received : 2016.08.25
  • Accepted : 2016.11.14
  • Published : 2017.04.30
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Abstract

Niobium doped zirconium oxide (Nb-Zr-O:NZO) thin films were fabricated on Si substrates by a sol-gel technique with an annealing temperatures of $500{\sim}1000^{\circ}C$ in air ($N_2:O_2=3:1$) for 20 minutes. It was found that the NZO film is based on tetragonal $ZrO_2$ polycrystalline structure with the Nb 5+ ion state and there is almost no diffusion of Nb or Zr to Si substrate. The relative dielectric constant for the NZO film with the Nb composition of 30 mol% and annealed at $800^{\circ}C$ was around 40. The root mean roughness was 1.02 nm. In addition, the leakage current of NZO films was as low as $10^{-6}A/cm^2$ at 4.4 V.

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References

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