• Bulletin of the Korean Chemical Society
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• v.35 no.4
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• pp.1182-1190
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• 2014

$Cd_{1-x}Zn_xS$-sensitized $K_4Nb_6O_{17}$ composite photocatalysts (designated $Cd_{1-x}Zn_xS/K_4Nb_6O_{17}$) were prepared via a simple deposition-precipitation method. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectrometry (EDS), $N_2$ sorption, ultraviolet-visible light diffuse reflectance spectroscopy (UV-Vis DRS), photoluminescence measurements (PL), and X-ray photoelectron spectroscopy (XPS). The $Cd_{0.8}Zn_{0.2}S$ particles were scattered on the surface of $K_4Nb_6O_{17}$, and had a relatively uniform size distribution around 50 nm. The absorption edge of $K_4Nb_6O_{17}$ was shifted to the visible light region and the recombination of photo-generated electrons and holes suppressed after $Cd_{0.8}Zn_{0.2}S$ loading. The $Cd_{0.8}Zn_{0.2}S$(25 wt %)/$K_4Nb_6O_{17}$ composite possessed the highest photocatalytic activity for hydrogen production under visible light irradiation, evolving 8.278 mmol/g in 3 h. Recyclability tests were performed, and the composite photocatalysts were found to be fairly stable. The mechanism of charge separation between the photogenerated electrons and holes at the $Cd_{0.8}Zn_{0.2}S/K_4Nb_6O_{17}$ composite was discussed.

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.43-46
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• 2000

$H_4Nb_6/O_{17}$/CdS nanocomposites which intercalated CdS particles, less than 0.8nm thickness, in the interlayer of $H_4Nb_6/O_{17}$ were prepared by the successive ion exchange reactions of $H_4Nb_6/O_{17}$ with $Cd^{2+}$ and $C_3H_7NH_3_+$, followed by the reaction with $H_2S$ gas. $H_4Nb_6/O_{17}$/CdS photocatalytically reduced $NO_3$￣ to $NO_2$￣ and $NH_3$in the presence of sacrificial hole acceptor such as methanol under visible light irradiation (wavelength>400nm), although unsupported CdS showed no noticeable photocatalytic activity for $NO_3$￣ reduction. The catalytic activity of $H_4Nb_6/O_{17}$/CdS greatly enhanced with co-doping of Pt particles in the interlayer.

• Bulletin of the Korean Chemical Society
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• v.28 no.6
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• pp.921-928
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• 2007

Three different phosphonated trisbipyridine ruthenium complexes, [(4-CH3-4'-CH2PO(OH)2-2,2'-bipyridine)- (bpy)2Ru]·(PF6)2 (Ru-P1), [(4-CH3-4'-CH2PO(OH)2-2,2'-bipyridine)3Ru]·(PF6)2 (Ru-P2), and [(4,4'-CH2PO- (OH)2-2,2'-bipyridine)3Ru]·(PF6)2 (Ru-P3) were synthesized and their photochemical and electrochemical properties were studied. These ruthenium complexes were strongly adsorbed on the surface of the layered metal oxide semiconductor K4Nb6O17 that was partially acid-exchanged and sensitized up to pH 10, while the carboxylated ruthenium complex, (4,4'-COOH-2,2'-bipyridine)3Ru·Cl2 (Ru-C) that was previously studied was sensitized only below pH 4. The visible light water reduction at K4Nb6O17 that was internally platinized and sensitized by these phosphonated Ru-complexes was comparatively studied using a reversible electron donor iodide.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.245-251
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• 2017

Niobium doped zirconium oxide (Nb-Zr-O:NZO) thin films were fabricated on Si substrates by a sol-gel technique with an annealing temperatures of $500{\sim}1000^{\circ}C$ in air ($N_2:O_2=3:1$) for 20 minutes. It was found that the NZO film is based on tetragonal $ZrO_2$ polycrystalline structure with the Nb 5+ ion state and there is almost no diffusion of Nb or Zr to Si substrate. The relative dielectric constant for the NZO film with the Nb composition of 30 mol% and annealed at $800^{\circ}C$ was around 40. The root mean roughness was 1.02 nm. In addition, the leakage current of NZO films was as low as $10^{-6}A/cm^2$ at 4.4 V.

• Transactions of Materials Processing
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• v.17 no.5
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• pp.364-372
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• 2008

In this study, the circumferential creep behaviors ofpilgered advanced Zirconium alloy tubes such as Zr-Nb-O and Zr-Nb-Sn-Fe were investigated in the temperature range of $400\sim500^{\circ}C$ and in the stress range of 80$\sim$150MPa. The test results indicate that the stress exponent for the steady-state creep rate of the Zr-Nb-Sn-Fe alloy decreases with the increase of stress(from 6$\sim$7 to 4), while that of the Zr-Nb-O alloy is nearly independent of stress(5$\sim$6). The activation energy of creep deformation is found to be nearly the same as the activation energy for Zr self diffusion. This indicates that the creep deformation may be controlled by dislocation climb mechanism in Zr-Nb-O. On the other hand, the transition of stress exponent(from 6-7 to 4) in Zr-Nb Sn-Fe strongly suggests the transition of the rate controlling mechanism at high stresses. The lower stress exponent at high stresses in Zr-Nb-Sn-Fe can be explained by the dynamic deformation aging effect caused by interaction of dislocations with Sn substitutional atoms.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.6
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• pp.245-250
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• 2007

This study was focused on the effect of sintering additive and particle size on the low temperature sintering of $0.85CaWO_4-0.15SmNbO_4$ ceramics. With an increase of $CaV_2O_6$ content, the sintering temperature of the specimens was reduced from $1150^{\circ}C\;to\;800^{\circ}C$. The dielectric constant (K) and Qf value were increased with $CaV_2O_6$ content. These results are due to the enhancement of the density by the liquid phase sintering. Temperature coefficient of resonant frequency (TCF) was slightly shifted to the positive value with $CaV_2O_6$ content. Typically, K of 12.64, Qf of 23,106 GHz, TCF of $-34ppm/^{\circ}C$ were obtained for the specimens with 7 wt.% $CaV_2O_6$ sintered at $900^{\circ}C$ for 3 h.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.4
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• pp.151-155
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• 2007

Quasi-phase-matched (QPM) second harmonic generation (SHG) waveguide devices for a green light generation were fabricated by a periodically patterned electrode on the +Z crystal surface and homogeneous LiCl solution using a 5 mol% MgO doped congruent z-cut lithium niobate crystals. Using selective chemical etching, we confirmed the periodic (${\sim}6.8{\mu}m$) domain inverted structure and measured SHG properties of fabricated periodically poled MgO : $LiNbO_3$ ridge-type waveguides.

• Korean Journal of Mineralogy and Petrology
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• v.33 no.2
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• pp.115-127
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• 2020

The Unsang gold deposit has been one of the three largest deposits (Daeyudong and Kwangyang) in Korea. The deposit consists of Au-bearing quartz veins filling fractures along fault zones in Precambrian metasedimentary rock and Jurassic Porphyritic granite, which suggests that it might be an orogenic-type. Based on its mineral assemblages and quartz textures, quartz veins are classified into 1)galena-quartz, 2)pyrrhotite-quartz, 3)pyrite-quartz, 4)pegmatic quartz, 5)muscovite-quartz, and 6)simple quartz vein types. The pyrite-quartz vein type we studied shows the following alteration features: sericitization, chloritization, and silicification. The quartz vein contains minerals including white quartz, white mica, chlorite, pyrite, rutile, calcite, monazite, zircon, and apatite. Rutile with euhedral or medium aggregate occur at mafic part from laminated quartz vein. Two types of rutile are distinguishable in BSE image, light rutile is texturally later than dark rutile. Chemical composition of rutile has 89.69~98.71 wt.% (TiO₂), 0.25~7.04 wt.% (WO₃), 0.30~2.56 wt.% (FeO), 0.00~1.71 wt.% (Nb₂O₅), 0.17~0.35 wt.% (HfO₂), 0.00~0.30 wt.% (V₂O₃), 0.00~0.35 wt.% (Cr₂O₃) and 0.04~0.25 wt.% (Al₂O₃), and light rutile are higher WO₃, Nb₂O₅ and FeO compared to the dark rutile. It indicates that dark rutile and light rutile were formed at different stage. The substitution mechanisms of dark rutile and light rutile are suggested as followed : dark rutile [(V³⁺, Cr³⁺) + (Nb⁵⁺, Sb⁵⁺) ↔ 2Ti⁴⁺, 4Cr³⁺ (or 2W⁶⁺) ↔ 3Ti⁴⁺ (W⁶⁺ ↔ 2Cr³⁺), V⁴⁺ ↔ Ti⁴⁺], light rutile [2Fe³⁺ + W⁶⁺ ↔ 3Ti⁴⁺, 3Fe²⁺ + W⁶⁺ ↔ Ti⁴⁺ + (V³⁺, Al³⁺, Cr³⁺) +Nb⁵⁺], respectively. While the dark rutile was formed by cations including V³⁺, V⁴⁺, Cr³⁺, Nb⁵⁺, Sb⁵⁺ and W⁶⁺ by regional metamorphism of hostrock, the postdating light rutile was formed by redistribution of cations from predating dark rutile and addition of Fe²⁺ and W⁶⁺ from Au-bearing hydrothermal fluid during ductile shear.

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.55-61
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• 2006

The microwave dielectric properties and low temperature sintering of $Ca[Ti_{1-x}(Ni_{1/3}Nb_{2/3})_x]O_3$ system were investigated at the sintering temperature $1,200\~1,350^{\circ}C$. The density and quality factors $(Q{\times}f)$ increased while dielectric constants slightly decreased with the decrease of Ti. The dielectric constant, quality factor, and temperature coefficient of resonance frequency $(\tau_f)$ were 64, 17,000 GHz, and $-9.1\;ppm/^{\circ}C$ respectively, when $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ ceramics were sintered at $1,300^{\circ}C$ for 4 h. $2Li_2O-B_2O_3$ was added to $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ to decrease the sintering temperature for LTCC application. The microwave dielectric properties of the samples sintered at $925^{\circ}C$ for 2 h with the addition of $6\;wt\%\;2Li_2O-B_2O_3$ were $\varepsilon_r=48.7,\;Q{\times}f=8,460\;GHz$, and $\tau_f=+5.6ppm/^{\circ}C$. Compatibility test of the composition with silver electrode shows no reaction with silver electrode, implying the feasibility as a high-K LTCC material.

• Journal of Ceramic Processing Research
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• v.20 no.6
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• pp.603-608
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• 2019

In this study, the multilayered thin films of (Ba,Sr)TiO3/K(Ta,Nb)O3 were fabricated by the sol-gel and spin coating methods, and their structural and electrical properties were investigated. The specimen showed polycrystalline X-ray diffraction (XRD) characteristics with a tetragonal structure. The average grain size and film thickness for one coating were about 30~40nm and 60nm, respectively. The phase transition temperature of specimen was lower than 10 ℃. The dielectric constant and loss at 20 ℃ of the specimen coated six times were 1,231 and 0.69, respectively. The rate of change in dielectric constant at an applied direct current (DC) voltage of the six times coated thin films was 17.3%/V. The electrocaloric effect was the highest around the temperature at which the remanent polarization rapidly changed. When an electric field of 660kV/cm was applied to the triply coated thin films, the highest electrocaloric property of 4.41 ℃ was observed.