• 제목/요약/키워드: $K^+$ ion source

검색결과 633건 처리시간 0.036초

Calculation of the ppressure pprofile for the ppLS Vacuum System

  • C.D.ppark;Kim, H.J.;Park, W.C.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1993년도 제5회 학술발표회 논문개요집
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    • pp.39-39
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    • 1993
  • A finite element analysis and Monte Carlo method have been applied to calculate the ppressure pprofiles around the ppohang Light Source (ppLS) electron storage ring with the aim of ppredicting the pperformance of the vacuum system designed for the ppLS vacuum system. After ppropperly choosing the design pparameters, the ppressure distribution are calculated as a function of the integrated stored beam current [AmppHrs]. The effect of changes of the vacuum pparameters, such as installed ppumpping sppeeds and synchrotron radiation induced gas desorpption rates on the ppressure pprofile, is also studied. The results indicate that the use of lumpped non-evapporable getter ppumpps together with spputter ion ppumpps for ppumpping the ppLS down to the required ppressure is ppossible in the ppresence of synchrotron induced gas loads, after resonable beam cleaning time.

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해안지역 콘크리트 구조물의 염소이온침투특성 평가 (Evaluation of Chloride Ion Penetration Characteristics for Concrete Structures at Coastal Area)

  • 한상훈;이진학;박우선
    • 한국해안·해양공학회논문집
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    • 제23권1호
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    • pp.11-17
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    • 2011
  • 항만콘크리트 구조물의 내구성 저하의 중요한 요인은 염소이온침투에 의한 철근의 부식이다. 따라서, 항만콘크리트 구조물의 염소이온 깊이와 깊이별 염소이온농도를 정량적으로 파악할 수 있다면, 구조물의 잔존수명을 사전에 비교적 정확하게 평가할 수 있다. 이러한, 구조물에서의 염소이온농도를 예측하기 위해서는 모델식의 개발이 필요하고 모델식은 정확한 현장데이타를 기반으로 한다. 이에 본 연구에서는 현장 항만구조물에 대한 코어시료를 채취하고 본 시료들에 대한 염소이온침투깊이와 깊이별 염소이온농도를 측정하고자 하였다. 시료는 1차로 완도항, 마산항, 인천항에서 채취하였고, 2차로 여수항과 동해항에서 채취하였다. 수직 높이별 영향을 파악하기 위해서 대기부, 비말대, 간만대로 나뉘어 각 층별 8개의 시료를 획득하였다. 채취된 시료중에서 4개는 강도 실험을 실시하였고, 나머지 4개로 내구성 실험을 실시하였다. 2개의 시료에 대해서는 질산은 변색법을 이용하여 염소이온 침투깊이를 측정 하였다. 나머지 2개의 시료는 깊이별로 5 mm 두께의 절편을 채취하고 이를 ASTM C 114의 시험법에 따라 염화물 이온농도를 측정하였다. 측정결과를 바탕으로 지역과 수직위치에 따른 염소이온 침투의 특성을 파악하였다.

고체 표면 식각 및 평탄화를 위한 가스 클러스터 이온원 개발 (Gas Cluster ion Source for Etching and Smoothing of Solid Surfaces)

  • 송재훈;최덕균;최원국
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.232-235
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    • 2002
  • An 150 kV gas cluster ion accelerator was fabricated and assessed. The change of surface morphology and surface roughness were examined by an atom force microscope (AFM) after irradiation of $CO_2$ gas clusters on Si (100) surfaces at the acceleration voltages of 50 kV. The density of hillocks induced by cluster ion impact was gradually increased with the dosage up to 5$\times$10$^{11}$ ions/$\textrm{cm}^2$. At the boundary of the ion dosage of 10$^{12}$ ions/$\textrm{cm}^2$, the density of the induced hillocks was decreased and RMS (root mean square) surface roughness was not deteriorated further. At the dosage of 5x10$^{13}$ ions/$\textrm{cm}^2$, the induced hillocks completely disappeared and the surface became very flat. In addition, the irradiated region was sputtered. $CO_2$ cluster ions are irradiated at the acceleration voltage of 25 kV to remove hillocks on indium tin oxide (ITO) surface and thus to attain highly smooth surfaces. $CO_2$ monomer ions are also bombarded on the ITO surface at the same acceleration voltage to compare sputtering phenomena. From the AFM results, the irradiation of monomer ions make the hillocks sharper and the surfaces rougher On the other hand, the irradiation of $CO_2$ cluster ions reduces the hight of hillocks and planarize the ITO surfaces. From the experiment of isolated cluster ion impact on the Si surfaces, the induced hillocks m high had the surfaces embossed at the lower ion dosages. The surface roughness was slightly increased with the hillock density and the ion dosage. At higher than a critical ion dosage, the induced hillocks were sputtered and the sputtered particles migrated in order to fill valleys among the hillocks. After prolonged irradiation of cluster ions, the irradiated region was very flat and etched.

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이온 플레이팅에서 기판 BIAS 전위와 이온 에너지 분포와의 상관관계 연구 (A Study on the Relationships between Substrate Bias Potential and Ion Energy Distributions)

  • 성열문;신중홍;손제봉;조정수;박정후
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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    • pp.472-474
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    • 1995
  • A Sputter ion Plating(SIP) system with a r.f. coil electrode and the Facing Target Sputter(FTS) source was designed for high-quality thin film formation. The rf discharge was combined with DC facing target sputtering in order to enhance ionization degree of a sputtered atoms. The energy of ions incident on the substrate depended on the health potential of DC biased substrate. The mean impact ion energy increased with negative bias voltage and rf power. The adhesive force of the TiN film formed was in the range of 30$\sim$50N, and markedly influenced by substrate bias voltage.

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이온빔을 이용한 STS304와 알루미나 브레이징 접합효과 (Effects of the Brazing Bonding between Al2O3 and STS304 with an Ion Beams)

  • 박일수
    • 한국산학기술학회논문지
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    • 제16권12호
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    • pp.8679-8683
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    • 2015
  • 세라믹은 고온에서 뛰어난 내마모성, 내부식성을 가지기 때문에 산업적 응용에 있어서 널리 사용된다. 세라믹은 금속과 비교해서 고온에서 더 큰 강도를 가지고 있고, 더 낮은 열전도도 및 열팽창 계수를 가진다. 그러나, 세라믹이 가진 취성의 성질은 전기전자산업과 고온에서의 구조적 적용에의 넓은 적용을 제한한다. Ti 활성금속과 STS304를 IBAD 기술을 이용해서 동시에 증착시켜 STS304 스테인레스강에 $Al_2O_3$(알루미나)의 브레이징 접합강도에 어떤 영향을 미치는지 알아보았으며, 시험편들은 Ti 타겟과 Ti+ STS304 타겟 두 종류를 이용하여 두께를 변화시켜가며 증착하였다. 브레이징 접합을 위한 삽입금속으로는 일반적으로 사용되는 Ag-Cu 공정조성의 합금이 사용되었다. 브레이징 접합품의 강도는 Ag-Cu 삽입금속과 알루미나 사이의 반응층의 두께와 반응 생성물 조직에 의해 결정되며, 본 실험에서는 계면 반응의 메커니즘을 보다 구체화하고 계면 반응에 의한 경사기능성의 접합계면을 더욱 향상시키는 결과를 얻고자 한다.

Analysis of Influence of Environmental Conditions on Ganoderic Acid Content: in Ganoderma lucidum Using Orthogonal Design

  • Li Na;Liu Xiao Hua;Zhou Jie;Li Yu Xiang;Zhao Ming Wen
    • Journal of Microbiology and Biotechnology
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    • 제16권12호
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    • pp.1940-1946
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    • 2006
  • The influence of environmental conditions on the ganoderic acid (GA) content in the fungus Ganoderma lucidum was investigated using a one-factor-at-a-time design and orthogonal design. Among the various medium components examined, sucrose, soybean powder or peptone, ferrous sulfate, and pH 6.0 were the most suitable carbon source (factor A), nitrogen source (factor B), mineral source (factor C), and initial pH (factor D), respectively, for the GA content in the one-factor-at-a-time design. According to the orthogonal design, the order of effect for the four factors on the GA content was A>C>D>B. The best level of factor A was $A_2$ (sucrose) with a value of +0.34 mg/100 mg DW. The optimal treatment combination was $A_2B_1C_3D_1$ with which the GA content reached up to 2.63$\pm$0.011 mg/100 mg DW. The interactions between the mineral ion and the nitrogen source, and the mineral ion and the pH were both highly significant (P<0.01). The highest interaction effect was ($B_2{\times}D_2$) with a value of +0.19 mg/100 mg DW, which was higher than the level effect value for $B_2$ (peptone) and D$_2$ (pH 5.0). Therefore, the results proved that interactions between factors cannot be ignored. The results also indicated the importance of the interactions between the factors, which may help to understand the metabolic pathway leading to triterpene biosynthesis and the expression and regulation of the key enzymes involved.

1 ${\mu}m$ CMOS 소자의 대칭적인 문턱전압 결정을 위한 최적 이온주입 시뮬레이션 (Simulation of optimal ion implantation for symmetric threshold voltage determination of 1 ${\mu}m$ CMOS device)

  • 서용진;최현식;이철인;김태형;김창일;장의구
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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    • pp.286-289
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    • 1991
  • We simulated ion implantation and annealing condition of 1 ${\mu}m$ CMOS device using process simulator, SUPREM-II. In this simulation, optimal condition of ion implantation for symmetric threshold voltage determination of PMOS and NMOS region, junction depth and sheet resistance of source/drain region, impurity profile of each region are investigated. Ion implantation dose for 3 ${\mu}m$ N-well junction depth and symmetric threshold voltage of $|0.6|{\pm}0.1$ V were $1.9E12Cm^{-2}$(for phosphorus), $1.7E122Cm^{-2}$(for boron) respectively. Also annealing condition for dopant activation are examined about $900^{\circ}C$, 30 minutes. After final process step, N-well junction, P+ S/D junction and N+ S/D junction depth are calculated 3.16 ${\mu}m$, 0.45 ${\mu}m$ and 0.25 ${\mu}m$ respectively.

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Pnenanthrene-오염토양의 동전기 생물학적복원에서 제거효율에 대한 황산염원의 영향 (Effect of Sulfate Source on Removal Efficiency in Electrokinetic Bioremediation of Phenanthrene-Contaminated Soil)

  • 김상준;박지연;이유진;양지원
    • KSBB Journal
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    • 제21권6호
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    • pp.428-432
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    • 2006
  • 본 연구는 미생물이 오염물 분해를 위해 황산염이 필요한 동전기 생물학적복원에서 황산염원의 종류가 제거효율에 미치는 영향을 조사하였다. 대표오염물과 적용 미생물은 각각 phenanthrene과 Sphingomonas sp. 3Y였다. Magnesium sulfate를 이용했을 때 Mg이온은 음극에서 전기적으로 생성되는 수산화이온과 결합하여 전해질 pH를 크게 감소시키고 미생물활성을 저해하는 현상이 관찰되었다. 따라서 ammonium sulfate와 disodium sulfate를 이용했을 때 전해질 및 토양 pH가 중성영역으로 유지되었으며 미생물 활성도 높게 유지되었다. 하지만 전자의 경우 ammonium이 미생물의 오염물 분해를 지연시켜 제거효율이 오히려 magnesium sulfate의 21.8%보다 12.0%로 더 낮게 나타났으며, 반면 후자의 경우 27.2%로 제거효율이 증가된 것을 관찰할 수 있었다. 이와 같은 제거효율의 차이는 장기간의 처리에서는 더욱 두드러질 것으로 예상된다.

Application of Malononitrile Derivatization Method for Structural Glycomics Study in Matrix-assisted Laser Desorption/Ionization Time-of-flight Mass Spectrometry

  • Ahn, Yeong-Hee;Yoo, Jong-Shin
    • Journal of Photoscience
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    • 제8권2호
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    • pp.83-86
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    • 2001
  • Structural analyses of oligosaccharide-malononitrile derivatives were conducted by matrix-assisted laser desorption/ionization post-source decay (MALDI-PSD) analysis in positive ion mode. The malononitrile derivatives of oligosaccharides, which were developed for highly sensitive detection of multi-component oligosaccharides by negative ion electrospray ionization mass spectrometry (ESI MS), were detected by positive-ion MALDI with the detection limit of 2 pmol level from the crude derivatization sample. The used matrix affected drastically the analytical results of oligosaccharide-malononitrile derivative by matrix-assisted laser desoprtion/ionization mass spectrometry (MALDI MS). The malononitrile derivatization of oligosaccharide also affect the patterns of MALDI-PSD spectra and give much more structural information than the free oligosaccharide.

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